# IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:8650578/)

**URL**: https://novapart.co/products/IRG4PC40WPBF/igbt-40-a-25-v-160-w-600-to-247ac-3-pins
**SKU**: IRG4PC40WPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.9800
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650578/)

PD -95183 

## IRG4PC40WPbF 

## INSULATED GATE BIPOLAR TRANSISTOR 

## **Features** 

- Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications 

- Industry-benchmark switching losses improve efficiency of all power supply topologies 

- 50% reduction of Eoff parameter 

- Low IGBT conduction losses 

- Latest-generation IGBT design and constructionoffers tighter parameters distribution,  exceptional reliability • Lead-Free 

**==> picture [193 x 97] intentionally omitted <==**

**----- Start of picture text -----**<br>
C<br>VCES = 600V<br>G VCE(on) typ. =  2.05V<br>E @VGE = 15V, IC = 20A<br>n-channel<br>**----- End of picture text -----**<br>


## **Benefits** 

- Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz 

- ("hard  switched" mode) 

- Of particular benefit to single-ended converters and boost PFC topologies 150W and higher 

• Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-247AC **Absolute Maximum Ratings** ~~a~~ **Parameter Max. Units** VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C ~~a~~ Continuous Collector Current 40 IC @ TC = 100°C Continuous Collector Current 20 A CO ICM Pulsed Collector Current 160 ILM ———_———— Clamped Inductive Load Current 160 ae VGE Gate-to-Emitter Voltage ± 20 V EARV © Reverse Voltage Avalanche Energy 160 mJ ~~==~~ PD @ TC = 25°C Maximum Power Dissipation 160 W PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55  to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) ~~aSS[ee]~~ Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) **Thermal Resistance Parameter Typ. Max. Units** R θ JC Junction-to-Case ––– 0.77 R θ CS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W R θ JA Junction-to-Ambient,  typical socket mount ––– 40 Wt Weight 6 (0.21) ––– g (oz) www.irf.com 1 04/23/04 

## IRG4PC40WPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>V(BR)CES<br>Collector-to-Emitter Breakdown Voltage<br>600<br>—<br>—<br>V<br>VGE= 0V, IC= 250µA<br>V(BR)ECS<br>Emitter-to-Collector Breakdown Voltage<br>18<br>—<br>—<br>V<br>VGE= 0V, IC= 1.0A<br>∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage<br>—<br>0.44<br>—<br>V/°C<br>VGE= 0V, IC= 1.0mA<br>—<br>2.05<br>2.5<br>IC= 20A                          VGE= 15V<br>VCE(ON)<br>Collector-to-Emitter Saturation Voltage<br>—<br>2.36<br>—<br>IC= 40A<br>See Fig.2, 5<br>—<br>1.90<br>—<br>IC= 20A , TJ= 150°C<br>VGE(th)<br>Gate Threshold Voltage<br>3.0<br>—<br>6.0<br>VCE= VGE, IC= 250µA<br>∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage<br>—<br>13<br>—<br>mV/°C<br>VCE= VGE, IC= 250µA<br>gfe<br>Forward Transconductance<br>18<br>28<br>—<br>S<br>VCE =100 V, IC=20A<br>—<br>—<br>250<br>VGE= 0V, VCE= 600V<br>—<br>—<br>2.0<br>VGE= 0V, VCE= 10V, TJ= 25°C<br>—<br>—<br>2500<br>VGE= 0V, VCE= 600V, TJ= 150°C<br>ICES<br>Zero Gate Voltage Collector Current<br>V<br>µA<br>es<br>es<br>Snnee<br>a<br>Rs<br>Gn<br>Q<br>|<br>||<br>|tT<br>~~| |~~<br>~~|~~<br>~~|~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~|~~——<br>ft|
|---|
|IGES<br>Gate-to-Emitter Leakage Current<br>—<br>—<br>±100<br>nA<br>VGE= ±20V<br>~~es~~|
|**Switching Characteristics @ TJ = 25°C (unless otherwise specified)**|
|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>Qg<br>Total Gate Charge (turn-on)<br>—<br>98<br>147<br>IC= 20A<br>Qge<br>Gate - Emitter Charge (turn-on)<br>—<br>12<br>18<br>nC<br>VCC= 400V<br>See Fig.8<br>Qgc<br>Gate - Collector Charge(turn-on)<br>—<br>36<br>54<br>VGE= 15V<br>td(on)<br>Turn-On Delay Time<br>—<br>27<br>—<br>tr<br>Rise Time<br>—<br>22<br>—<br>TJ= 25°C<br>td(off)<br>Turn-Off Delay Time<br>—<br>100<br>150<br>IC= 20A, VCC= 480V<br>tf<br>Fall Time<br>—<br>74<br>110<br>VGE= 15V, RG= 10Ω<br>Eon<br>Turn-On Switching Loss<br>—<br>0.11<br>—<br>Energy losses include "tail"<br>Eoff<br>Turn-Off Switching Loss<br>—<br>0.23<br>—<br>mJ<br>See Fig. 9,10, 14<br>Ets<br>Total Switching Loss<br>—<br>0.34<br>0.45<br>td(on)<br>Turn-On Delay Time<br>—<br>25<br>—<br>TJ= 150°C,<br>tr<br>Rise Time<br>—<br>23<br>—<br>IC= 20A, VCC= 480V<br>td(off)<br>Turn-Off Delay Time<br>—<br>170<br>—<br>VGE= 15V, RG= 10Ω<br>tf<br>Fall Time<br>—<br>124<br>—<br>Energy losses include "tail"<br>Ets<br>Total Switching Loss<br>—<br>0.85<br>—<br>mJ<br>See Fig.10,11, 14<br>LE<br>Internal Emitter Inductance<br>—<br>13<br>—<br>nH<br>Measured 5mm from package<br>ns<br>ns<br>aee<br>ee<br>Re<br>a<br>~~ee~~<br>~~a~~<br>Re<br>a<br>esee<br>Rees<br>ee<br>Reff<br>ee<br>ee<br>Re<br>eess|
|Cies<br>Input Capacitance<br>—<br>1900<br>—<br>VGE= 0V<br>Coes<br>Output Capacitance<br>—<br>140<br>—<br>pF<br>VCC= 30V<br>See Fig. 7<br>Cres<br>Reverse Transfer Capacitance<br>—<br>35<br>—<br>ƒ = 1.0MHz<br>Re<br>Re|



**Notes:** 

Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) 

VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10 Ω , (See fig. 13a) 

Pulse width ≤ 80µs; duty factor ≤ 0.1%. 

Pulse width 5.0µs, single shot. 

Repetitive rating; pulse width limited by maximum junction temperature. 

www.irf.com 

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## IRG4PC40WPbF 

**==> picture [434 x 468] intentionally omitted <==**

**----- Start of picture text -----**<br>
50<br>For b oth: Trian gu lar  w a ve :<br>D uty cycle : 50%<br>T   =  12 5°CJ<br>40 T        = 90°Cs ink<br>G at e drive as specified<br>Po w er D iss ip ation  =  2 8 W C la m p  vo lta g e:<br>80 %  o f rate d<br>30 TM K all ST<br>S qu are wave:<br>60 %  of rated<br>20 po          vo lta g e Noun \<br>AE LTA NUTT LETTE<br>eh NY<br>10<br>Ideal diodes<br>es EPS SST<br>0 a ie A<br>0.1 1 10 100 1000<br>f, Frequency (kHz)<br>Fig. 1  - Typical Load Current vs. Frequency<br>  (Load Current = IRMS of fundamental)<br> 1000  1000<br>a ee ee ee ee ee ee eee Ee ee ee ee es ee<br>T  = 25  CJ °<br>ao ee es ee ee<br> 100 te e  100<br>| L ° T<br>T  = 150  CJ ° T  = 150  CJ<br>LA<br>| O L<br>|| wl |] | | | | | O YYyY| |R| | |<br> 10 A t  10 T  = 25  CJ °<br>| L i<br>V      = 15VGE V      = 50VCC<br>80µs PULSE WIDTH 5µs PULSE WIDTH<br> 1 e e  1 es ee<br>1.0 2.0 3.0 4.0 5.0 5 7 9 11<br>V     , Collector-to-Emitter Voltage (V)CE V     , Gate-to-Emitter Voltage (V)GE<br>Load Current ( A )<br>I   ,  Collector-to-Emitter Current (A)C I   ,  Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


**Fig. 2** - Typical Output Characteristics 

**Fig. 3** - Typical Transfer Characteristics 

www.irf.com 

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## IRG4PC40WPbF 

**==> picture [436 x 477] intentionally omitted <==**

**----- Start of picture text -----**<br>
50 3.0<br>V      = 15VGE<br>80 us PULSE WIDTH<br>pitt tt tt ty FE T<br>40 I   =       AC 40<br>titi ti | 2.5 PEE EET EE Cb<br>SSCCEL ELL fet e te<br>30<br>PEE ee e<br>TREE I   =       AC tT 20<br>2.0<br>20 ptt Sae ed I   =       AC 10<br>itiCe|ttNEINE 1.5 TPTPEL E ilRRA<br>10 TELLINGee a cee OO OTA VA OG OETA OO OU<br>0 PT EEE PET in 1.0 PEE EEE EEEEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (  C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4  - Maximum Collector Current vs. Case Fig. 5  - Typical Collector-to-Emitter  Voltage<br>Temperature vs. Junction Temperature<br> 1 ee<br>SS<br>D = 0.50<br>ee rete een ns ee So Ll<br>eS Ce eee<br>| 0<br>0.20 SneeeAll<br>0.1 - 0.10 a a a<br>aS 0.05 — an eee ne PDM t 1<br>0.02 SINGLE PULSE t 2<br>o 0.01 e demeeneeel|| (THERMAL RESPONSE) edi en Notes:<br>1. Duty factor D = t   / t1 2<br>0.01 Fdill a t A 1lMTll 2. Peak TJ = PDM x  Z thJC + TC<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


**Fig. 6** - Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRG4PC40WPbF 

**==> picture [209 x 192] intentionally omitted <==**

**----- Start of picture text -----**<br>
4000<br>VGE = 0V, f = 1MHz<br>Cies = Cge + Cgc , C      SHORTEDce<br>Cres = Cgc<br>CT Coes = Cce + Cgc<br>3000 Kol<br>So Cies a e<br>2000<br>Ni LETST<br>O EE Coes anil<br>1000<br>D N Cres<br>0, P TS OCllK<br>0<br> 1 TTS  10 UT]  100<br>V     , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [201 x 194] intentionally omitted <==**

**----- Start of picture text -----**<br>
20<br>VCC = 400V<br>I C = 20A<br>C ae<br>16<br>SPP<br>EC E<br>PE<br>12 PTT<br>8<br>pp oe<br>aun —<br>4<br>7<br>0<br>0 prt 20  iti 40 60 yi y 80 t 100<br>Q   , Total Gate Charge (nC)G<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


**Fig. 7 -** Typical Capacitance vs. Collector-to-Emitter Voltage 

**Fig. 8** - Typical Gate Charge vs. Gate-to-Emitter Voltage 

**==> picture [434 x 199] intentionally omitted <==**

**----- Start of picture text -----**<br>
1.0  10<br>V      = 480VCC R      = 10OhmG 10  Ω<br>0.9 V      = 15VT      = 25    CJGE ° V      = 15VV      = 480VGECC<br>I       = 20AC<br>PE EP<br>0.8 Wie sseeee BBBeeeeee<br>I   =       AC 40<br>0.7 P E ee e<br>i 0 a  1 eT I   =       A TT C 20<br>0.6<br>4 PtytPtPTyt| I   =       AC 10 |<br>0.5<br>HOLE TT be<br>0.4<br>PA e d<br>ee Aer<br>0.3 0.1<br>10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R    , Gate Resistance (Ohm)G  (Ω) T  , Junction Temperature (  C )J °<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


**Fig. 9** - Typical Switching Losses vs. Gate Resistance www.irf.com 

**Fig. 10** - Typical Switching Losses vs. Junction Temperature 

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## IRG4PC40WPbF 

**==> picture [437 x 195] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0  1000<br>R      = 10OhmG 10 Ω V      = 20VGE<br>T      = 150  CJ ° T      = 125  CJ o<br>V      = 480VCC<br>V      = 15VGE<br>1.5<br>e e eeeh|<br>Ean ee<br>1.0 4een  100 acti<br>P| TY | SeriA A<br>Ep 4nnnen PEee eeestll eeeEH<br>0.5<br>L ||i<br>Pf] | df pod. ea) ee eee<br>SAFE OPERATING AREA<br>0.0 PPE  10 ay ell<br>5 15 25 35 45  1  10  100  1000<br>I    , Collector-to-emitter Current (A)C V     , Collector-to-Emitter Voltage (V)CE<br>Total Switching Losses (mJ)<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


**Fig. 11 -** Typical Switching Losses vs. Collector-to-Emitter Current 

**Fig. 12** - Turn-Off SOA 

www.irf.com 

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## IRG4PC40WPbF 

**==> picture [415 x 499] intentionally omitted <==**

**----- Start of picture text -----**<br>
L D.U.T.<br>50V V  *C 0 - 480V RL = 4 X I480VC@25°C<br>1000V 480µF<br>960V<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max) ®@ tt<br>* Note: Due to the 50V pow er supply, pulse width and inductor<br>   w ill increase to obtain rated Id.<br>Fig. 13a  - Clamped Inductive Fig. 13b  - Pulsed Collector<br>Load Test Circuit Current Test Circuit<br>I C<br>L<br>D river* D.U.T. Fig. 14a  - Switching Loss<br>ee TO VC — Test Circuit<br>50V<br>1000V<br>* Driver same type<br>  as D.U.T., VC = 480V<br>i ;<br>90%<br>10%<br>VC<br>90% t d(o ff) Fig. 14b  - Switching Loss<br>Waveforms<br>I C 5% 10%<br>t r t f<br>t d (o n) t=5µs<br>- : E o n a E o ff<br>E   = (E    +E    )ts        o n       off<br>**----- End of picture text -----**<br>


www.irf.com 

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## IRG4PC40WPbF 

## TO-247AC Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-247AC Part Marking Information 

**==> picture [396 x 90] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: T HIS IS AN IRFPE30<br>WITH ASSEMBLY  PART  NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>LOGO  035H<br>IN THE ASSEMBLY LINE "H"<br>56           57<br>Note:   "P" in assembly line a DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/04 

www.irf.com 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4pc40wpbf/igbt-600v-40a-to-247ac/dp/8650578)
---

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