# IGBT, 42 A, 2.1 V, 160 W, 600 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:8650535/)

**URL**: https://novapart.co/products/IRG4PC40KDPBF/igbt-42-a-21-v-160-w-600-to-247ac-3-pins
**SKU**: IRG4PC40KDPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.3100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 42A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.1V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650535/)

## **Features** 

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C<br>Vces =<br>=<br>G VcE(on) typ.<br>E @Vee = 15V,<br>n-channel<br>**----- End of picture text -----**<br>


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TO-247AC<br>**----- End of picture text -----**<br>


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[Visaces | Colestorto-Emiter Breakdown Votlage® | 600| — | — | V | Vce=OV,lo=250UA<br>∆ ∆<br>F Viseres Ty | Temperature Coeff. of Breakdown Votage | — |0.46| — | VC | Voe=OV,Io=1.0mA<br>Vce(on) Collector-to-Emitter Saturation Voltage | — [2.10]2.6 | Ic = 25A Vee = 15V<br>|Vcen | — [214] — | Ic = 25A, Ty = 150°C<br>∆ ∆<br>[Veen |Gate Threshold Voltage | 3.0 | — | 60 | | Vce=VoeIo=250HA<br>Fie Tu | Temperature Coeff of Threshold Votage [| — [13 | — |mVPO| Voe=Voe,lo= 250A<br>feIces [ForwardZeroReeGateTransconductance@VoltageSepeaeetCollector Current|[27S| 70— | 14|— |250]son]—| S$pA |cov.veestooy=60e—WsVce=100V,lo=25A<br>ceVem PeeteDiode Forward Voltage Drop }—Sate [1.3/4.7] V |beemeneameIc=15A See"|Fig. 13<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|| Parameter | Min. | Typ. | Max. | units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 120 | 180 Ic = 25A<br>Qj | Gate= Collector Charge turn-on) | — | 81 | 77 |_| Voe=18V<br>fran<br>SS~—~—sSCSsS<br>[taomfh —S«dRiseTimeBoag Tne BT — | | T= DBC<br>Ω<br>ft | Turn-Off DelayTime | — | 110 | 160 | Ic = 25A, Vec = 480V<br>[Eon [FalTime | = | 100] 150 | Vor = 15V, Re = 10<br>Loss|<br>[Eo[Ew | Turn-O ffn SwitchSwitch ing  Loss | —— [0.95][0.76] —— || mJ | EnergySee Fig. losses 9,10,14 include "tail"<br>tsc | ShortTotal CircuitSwitchingWithstand loss Time——SSS=dY 10‘|. | 28 Us | Voc = 360V, Ty = 125°C<br>Ω<br>aon | Turm-On DelayTime _—=S—~isC + | — |_| T= 180,<br>ft [RiseTime | SH | 87 | Ic = 25A, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br>


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30<br>For both:<br>25 e e Duty cycle: 50%<br>T   = 125°CJ<br>T        = 90°Csink<br>a ao™|le Gate drive as specified e eHill<br>20 Power Dissipation =    W<br>Square wave:<br>15 eg 60% of rated  nn _MLElll<br>         voltage<br>i I A EEE SNELL<br>10 |: aN<br>ca Ideal diodes alll<br>5<br>ee UU ETT PP<br>LE EET<br>0<br>0.1  1  10  100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 100<br>aeee a ee ee ee<br>elley A ee ee<br>T  = 150°CJ<br>| T  = 150  CJ o ee ll P O<br>T  = 25°CJ<br> 10 ouft | dE U 10 e||<br>Po TTT HP T  = 25  CJ o i Ap ee eee eee eee ee eee<br>ellHf Mill ff fF | | |<br>a ell V      = 15VGE yf | — | V      = 50VCC 4]<br> 1 | 20µs PULSE WIDTH 1 Aee<br>0.1  1  10 5 7 9 11<br>V     , Collector-to-Emitter Voltage (V)CE V    , Gate-to-Emitter Voltage (V)GE<br>LOAD CURRENT (A)<br>I   ,  Collector-to-Emitter Current (A)C I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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50 5.0<br>V      = 15VGE<br>80 us PULSE WIDTH<br>T OE<br>I   =       AC 50<br>40 PEPE Pape Eg<br>4.0<br>PSLTTTTT |Ty Pe LLtr<br>30 rTFCP NCEEEETaNrT] ReeceBOBPP.oeBe ee<br>3.0<br>20 | | | | | ||IN Na| | P=28Bee e<br>I   =       AC 25<br>Pt tee TET TI N [I O ne Gn 08 0 ne ee<br>10 pitttf| tTitt|tNIN 2.0 seSEPEEeeReeee epS I   =       AC 12.5 an<br>0 PitT} | Ttyti 1.0 SeESG8Se<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (    C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1 ee<br>D = 0.50<br>e e Tne een<br>rp<br>e 0.20 =ap== ee e|ott ee| el<br>0.1 - 0.10 ee es a<br>eel ee ee PDM<br>0.05<br>t1<br>= [e][e]<br>0.02 SINGLE PULSE t2<br>Se 0.01 aT (THERMAL RESPONSE)  | Notes:<br>wae 9. diemenea tii] 0<br>1. Duty factor D = t   / t1 2<br>2. Peak TJ= PDM x  Z thJC + TC<br>0.01 dillT y | MA C|ETTT<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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3000 VGE = 0V, f = 1MHz 20 VCC = 400V<br>2500 = CCCiesresoes === CCCgegcce + C+ Cgc ,gc C      SHORTEDce 16 C I C = 25A AE<br>i PEt<br>2000 SE 0 iit<br>Cies 12<br>Sel tl ee SERRE TyEEEP aee<br>1500<br>| | EE RRRREP Zee<br>| Span<br>8<br>A == 450 n8ne<br>1000<br>WA WTP<br>!<br>4<br>500 PAN FeEEReeeeeeeee<br>Coes<br>Cres<br>0 “=Po =Eee| 0 aARERReee<br> 1  10  100 0 20 40 60 80 100 120 140<br>V     , Collector-to-Emitter Voltage (V)CE Q   , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>3.00  100<br>V      = 480VCC R      =GG Ωmm<br>V      = 15VT      = 25   CJGE ° V      = 15VV      = 480VGECCV      = 480VGECCGECCCC<br>I       = 25AC<br>2.50 aaP| |ap  10 eReeeeeeeeeeeeeeee<br>VA PE TE I   =       ACC 50<br>Ea pS Gees SSeS == == eee<br>a EE yb<br>I   =       ACC 25<br>Phy ay Pp ee I   =       ACC 12.5<br>2.00  1<br>La ul He Oe We Oe OO OO ee<br>Bape So t<br>1.50 aaWzP| |P| |P| |aa 0.1 G6 P et OeEdeppOeEEE ep pee OeEdeppOeEEE ep peeEdeppOeEEE ep peedeppOeEEE ep peeOeEEE ep peeEEE ep pee ep peep pee pee e EEE<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br> ( Ω ) (Ohm) T  , Junction Temperature (  C )JJ °<br>C, Capacitance (pF)<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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 100<br>R      =GG Ωmm<br>V      = 15VV      = 480VGECCV      = 480VGECCGECCCC<br> 10 eReeeeeeeeeeeeeeee<br>PE TE I   =       ACC 50<br>Ea pS Gees SSeS == == eee<br>EE yb<br>I   =       ACC 25<br>Pp ee I   =       ACC 12.5<br> 1<br>ul He Oe We Oe OO OO ee<br>So t<br>0.1 G6 P et OeEdeppOeEEE ep pee OeEdeppOeEEE ep peeEdeppOeEEE ep peedeppOeEEE ep peeOeEEE ep peeEEE ep pee ep peep pee pee e EEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (  C )JJ °<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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8.0  1000<br>R      = G mΩ V      = 20VGE<br>T      = 150  CJ ° T      = J<br>V      = 480VCC<br>V      = 15VGE<br>J | |ll<br>6.0<br> 100<br>PE tL EEL VY |<br>4.0<br> 10<br>+H LA<br>2.0<br>SAFE OPERATING AREA<br>0.0 PEt TELE yt  1 pe eil<br>0 10 20 30 40 50  1  10  100  1000<br>I    , Collector-to-emitter Current (A)C V     , Collector-to-Emitter Voltage (V)CE<br>Total Switching Losses (mJ)<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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100 a<br>eeee<br>re ee ee<br>P| | | | Ur sy I<br>ey<br>cnny An<br>Aan<br>10<br>Yr | {| ff fT | ff |<br>ne Aree T  = 150°C ||<br>J<br>| | UF |<br>naa T  = 125°CJ _<br>T  =   25°CJ<br>am a<br>a An 7<br>EE|__|<br>1<br>0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V      (V)FM<br>F<br>Instantaneous Forward Current - I    (A)<br>**----- End of picture text -----**<br>


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100 100<br>V  = 200VR V  = 200VR<br>ll T  = 125°CJ en! an T  = 125°CJ anne<br>T  = 25°CJ T  = 25°CJ<br>80 papsPTT If=eeeaFERS e  aeea<br>I   = 30AF<br>I   = 30AF I   = 15AF<br>60 10<br>Po i ne<br>I   = 15AF<br>STN Po aeAff"<br>a<br>I   = 5.0AF<br>40 PN wi<br>— Ta ma n<br>I   = 5.0AF<br>rs P o<br>Tt<br>20 1<br>i eeee<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>800 1000 |-————“_<br>-] V  = 200VT  = 125°CT  = 25°CRJJ || V  = 200VT  = 125°CT  = 25°CRJJ -|a| | |SZAy 4Y<br>600<br>I   = 30AF<br>ee) All<br>| he yd I   = 5.0AF ) enn<br>400<br>I   = 15AF I   = 15AF<br>Pe TDNAT A yy f f<br>I   = 5.0AF I   = 30AF<br>200<br>TT<br>0 100<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>t    -  (ns)rr I         - (A)IRRM<br>RR<br>Q       -  (nC)<br>di(rec)M/dt  -  (A/µs)<br>**----- End of picture text -----**<br>


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Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br>


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GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>PAN td(on) tr 5% Vce G<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>


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90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>


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trr<br>trr<br>Ic — —! Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>a eveeecenncsseeeernnnesstecen<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>**----- End of picture text -----**<br>


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Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>‘<br>’<br>:<br>L171 i<br>VOLTAGE IN D.U.T.<br>LOA't'<br>: CURRENT IN D1<br>’<br>:<br>t 1<br>1 1<br>Ut!<br>t0 t1 t2<br>**----- End of picture text -----**<br>


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L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br>


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## Notes: 

- Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature 

- (figure 20) 

- VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19) 

- Pulse width ≤ 80µs; duty factor ≤ 0.1%. 

Pulse width 5.0µs, single shot. 

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3.65 (.143) - D -<br>15.90 (.626) 3.55 (.140) 5.30 (.209)<br>15.30 (.602) 0.25 (.010) M D B M 4.70 (.185)<br>= - B - - A - _ 2.50 (.089)<br>1.50 (.059)<br>5.50 (.217) 4<br>20.30 (.800) | ofpLOYog > tHm5<br>19.70 (.775) 2X 5.50 (.217) NOTES:<br>4.50 (.177) 1  DIMENSIONING & TOLERANCING<br>    PER ANSI Y14.5M, 1982.<br>1 2 3 2  CONTROLLING DIMENSION : INCH.<br>3  CONFORMS TO JEDEC OUTLINE<br>I aunar - C - : I      TO-247-AC.<br>14.80 (.583)<br>4.30 (.170)<br>14.20 (.559) 3.70 (.145)<br>LEAD ASSIGNMENTS<br>Hexfet IGBT<br>2.40 (.094)2.00 (.079) tie 3X 1.40 (.056)1.00 (.039) 3X [0.80 (.031)] 0.40 (.016) 1 - Gate2 - Drain LEAD 1 - GATE ASSIG NMENTS 1 - Gate2 - Collector<br>C.J 5.45 (.215)2X2X il 3.40 (.133)3.00 (.118)0.25 (.010) M C A S a 2.60 (.102)2.20 (.087) 3 - Source4 - Drain2 - DRAIN3 - SOURCE4 - DRAIN3 - Emitter4 - Collector<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO | IgR 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/03 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4pc40kdpbf/igbt-600v-42a-to-247ac/dp/8650535)
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