# IGBT, 23 A, 2.52 V, 100 W, 600 V, TO-247AC, 3 Pins

![Product image](https://novapart.co/image/farnell:9105093/)

**URL**: https://novapart.co/products/IRG4PC30UDPBF/igbt-23-a-252-v-100-w-600-to-247ac-3-pins
**SKU**: IRG4PC30UDPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.0000
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | IRG4 |
| Power Dissipation | 100W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-247AC |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 23A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.52V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9105093/)

## **Features** 

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TO-247AC<br>**----- End of picture text -----**<br>


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||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|[Verces|∆|∆|_|||Collector-o-EmitterParameter|Breakdown|Volages||Min.600|||Typ.|||Max.|||||UnitsV_||Vee|Conditions|
|[|||VcE(on)Viewed!|T||||Collector-to-Emitter|Temperature|Coe.|of|Saturation|Breakdown|Voltage|Votage||Sa----~--|[0:63|1.95|||[=|2.1||[VPC|| Vee|Ic|Io =|=|23A=12A=|OV,OV,|lc|Ic|== 1.0m250HA|See|Voe|Fig.|=|15V|2,5|
|[Vee|||----||2.09|||----|||Ic|=|12A,|Ty|=|150°C|
|∆|∆|
|Veet|T[|Temperature|Coeff.|of|Threshold|Voltage||—|||-11 ||fnVi°C]|Vor|=|Vee,|lo|=|250uA|
|fae|||Forward|Transconductance|©|||3.1.|8.6|[=||S|||Voe=|100V,|lo=|12A|
|IcEs|Zero|Gate|Voltage|Collector|Current||hee----|||----|[2500|||||Voe|=|OV,|V|ocece|=|60|0V,0V|Ty|=|150°C|
|F|VeM|||Diode|Gate|Threshold|Forward|Voltage|Vottage|Drop|[3.0|||--------|||[=~1.4/4.7]1.3 [60]||1.6|||Vv|||I|Voe=cc=12A =12A,VersTy==|150°C|See|Fig.|13|
|IcES|Gate-to-Emitter|Leakage|Current|----|||----|[+100]|nA|||Vee|=|+20V|
|Switching|Characteristics|@|Ty|=|25°C|(unless|otherwise|specified)|
|[Q,|Parameter|Min.||Typ.|||Max.||Units|Conditions|
|[age|_||Total|Gate|Charge|(turn-on)||---||50|||75|||Ic|=|12A|
||Qy-|||Gate|-|Emitter|Charge|(turn-on)||---||8.1|||12|||nC|||Voc=400V|See Fig. 8|
|[ton|||Gate|-|Collector|Charge|(turn-on)|||----||18|||27|||Vor|=|15V|
|ft|
|ft|||RiseTimeTurn-OnDelayTime||---||40||---||T)=25°C|
|Ω|
|[tam||||)|ons|||Ie = 12, Veo = 480V|
|fe|||Turn-Off|DelayTime|||||91|||140]|||Ve = 18V, Re = 23|
|[Eon|||FallTime|||80|||130]|Energy|losses include|"tail" and|
|[Ep[Es|||Turn-O|ffn|SwitchinSwitchin|g|L|ossoss|||--|---|||0.|3816]|----|-|-|||mJ|||diode|See|Fig.|reverse|9,|10,|recovery.|11,|18|
|[ton|||Total|Switching|Loss||---||0.54]|0.9|
|ft|||Turn-OnDelayTime|||~~~|||40||---||T=|150°C,|See|Fig.|9,|10,|11,|18|
|Ω|
|[tam|RiseTime|||||22|||||ons|||Io = 12, Veo = 480V|

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20<br>Duty cycle: 50%<br>T   = 125°CJ<br>T        = 90°Csink<br>16 Gate drive as specified<br>oe |<br>Turn-on losses include<br>effects of reverse recovery<br>Power Dissipation = 24W<br>a 12<br>Cc a |<br>60% of rated<br>         voltage<br>| 8<br>o ob ¢ NOll<br>SU L<br>Le 4 e UE ETI EAST<br>r BNUill<br>a |<br>0<br>0.1 1 10 100<br>f, Frequency (kHz)<br>**----- End of picture text -----**<br>


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100 100<br>T  = 25°CJ<br>| T  = 150°CJ EO T  = 150°CJ g o<br>10 10<br>Pot A L m<br>T  = 25°CJ<br>po F AR E<br>1 1<br>n/t |<br>V     = 15VGE V      = 10VCC<br>0.1 A 0.1<br>poMeaceusewon) ——— LAL gence ond<br>0.1 1 10 5 6 7 8 9 10 11 12<br>V     , Collector-to-Emitter Voltage (V)CE V    , Gate-to-Emitter Voltage (V)GE<br>I   , Collector-to-Emitter Current (A)C I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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25 3.0<br>I    = 24AC<br>CEE S) bs e<br>20<br>DN eee ter saan<br>TONE 2.5 L e<br>15<br>SB Nene ATT LT<br>I    = 12AC<br>10<br>es ee ee  Ne 2.0 Py} [pe<br>es ee fo  te<br>5 pt<br>I    = 6.0AC<br>NS<br>0 SRRpp A 1.5 TT CELL soaanrh|<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (°C)C T  , Junction Temperature (°C)J<br>Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage<br>Case Temperature vs. Junction Temperature<br>10<br>a ee ee ee ee el<br>1<br>ETO<br>D = 0.50<br>0.20<br>e n ee ee ee<br>0.10 ee| PDM<br>0.1<br>0.05 t<br>1<br>0.020.01       SINGLE PULSE t 2<br>(THERMAL RESPONSE)<br>wae PT TT 1. Duty factor D =  t   / t  , 1 2<br>a a | ee ee<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t   , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current (A CE<br>V     , Collector-to-Emitter Voltage (V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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2000<br>V      = 0V,         f = 1MHzGE<br>C      = C     + C     ,   C     SHORTEDies         ge         gc         ce<br>C      = C<br>res         gc<br>1600 KI | C      = C     + Coes        ce         gc<br>s<br>|<br>1200<br>eet |<br>a ell<br>800 es<br>Sse)N ~<br>es<br>400<br>ee |<br>SE ||<br>0 PENS<br>1 10 100<br>V    , Collector-to-Emitter Voltage (V)CE<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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0.60<br>> 0.58 ff ssc | LT |Z |<br>E “TT TITY TT<br>i /<br>2 0.56<br>2 LtOo| Al |<br>a 0.54 |[At | tl)<br>i<br>0.52<br>B EAT tt<br>0.50 a) Pt<br>0 10 20 30 40 50 60<br>R   , Gate Resistance (G     Ω)<br>**----- End of picture text -----**<br>


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20<br>16<br>fo<br>Pt<br>12 i<br>Pt LA<br>8<br>eoA<br>4<br>pf tt<br>7 |tt<br>0 py | |<br>0 10 20 30 40 50<br>Q  , Total Gate Charge (nC)g<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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10<br> R      = 23G Ω<br> V      = 15VGE<br> V      = 480VCC<br>= PCEECEEE Pee<br>eee Oeeee<br>I    = 24AC<br>e Litet ttt t<br>ys t 1 ee Te I    = 12AC<br>I    = 6.0AC<br>2 pee r<br>op)stg ELLEpaLL r eTiS<br>0.1 TEE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (°C)J<br>**----- End of picture text -----**<br>


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2.0 1000<br> Ω<br>1.6<br>100<br>ee ee |<br>oO a A ee ee ee eee We<br>1.2<br>ptf fl | / too<br>2 | |f | 10 A | |<br>0.8<br>= Pe ee ee ll<br>1<br>e 0.4 f fp FARAHA<br>0.0 ee ee A 0.1 eeES ee ee ll<br>0 10 20 30 1 10 100 1000<br>I   , Collector-to-Emitter Current (A)C V     , Collector-to-Emitter Voltage (V)CE<br>Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA<br>Collector-to-Emitter Current<br>100 eeP| ee<br>P| yf | J | tf f fy Tf<br>ee | [| [ | fT | ff JT |<br>P| ft ee| ttee ee ee<br>ey,<br>Pet tg<br>P| tL A<br>T  = 150°CJ<br>10 i T  = 125°CJ A<br>— Al<br>|_|| | T  =   25°CJ | | [fet7AP ftt| f t<br>Pt |Ap<br>aos/ seen<br>PP<br>i eenee<br>1<br>0.4 0.8 1.2 1.6 2.0 2.4<br> Forward Voltage Drop - V      (V)FM<br>C<br>I   , Collector-to-Emitter Current (A)<br>F<br>Instantaneous Forward Current - I    (A)<br>**----- End of picture text -----**<br>


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160 100<br>V  = 200VR | V  = 200VR ee ee<br>a T  = 125°C eel J SEE T  = 125°CJ<br>T  = 25°CJ T  = 25°CJ<br>_ ObpsJ pL|(as eeea a<br>120 Pt ee eee<br>I   = 24AF<br>es | ee I   = 24AF<br>I   = 12AF<br>I   = 12AF<br>80 ‘7 Ys * 10 Se ES<br>I   = 6.0AF I   = 6.0AF<br>ene<br>ROG | |<br>aie Sein g a oeg<br>RR BE<br>40<br>p Sens| = iS QZ | | | |<br>== Po<br>0 Ss nl ee 1<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>Fig. 14- Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>600 10000<br>V  = 200VR || V  = 200VR PTT<br>T  = 125°CJ T  = 125°CJ<br>P= T  = 25°CJ ||[oop T  = 25°CJ P| TT<br>400 _ 1000 eeeeee<br>I   = 6.0AF<br>ee Ane<br>I   = 24AF<br>Wy OE<br>I   = 12AF<br>I   = 12AF > | we —<br>200 mae 100 G EE<br>GPa a ———<br>I   = 24AF<br>I   = 6.0AF Ja ( ee ns<br>a e e ee<br>0 FTTH =F 10 =f Fro<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>t    -  (ns)rr I         - (A)IRRM<br>RR<br>Q       -  (nC)<br>di(rec)M/dt  -  (A/µs)<br>**----- End of picture text -----**<br>


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90% Vge<br>+Vge<br>Same typedevice as Vce<br>D.U.T.<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>80% 430µF 5% Ic<br>of Vce D.U.T.<br>td(off) tf<br>t1+5µS<br>Eoff =  Vce ic dt<br>t1<br>Fig. 18a - Test Circuit for Measurement of fx<br>Eon: Eottidiode): ters Qrrs Irrs ta(on); tr tayote), te <—_—————_+!<br>t1 t2<br>Fig. 18b - Test Waveforms for Circuit of Fig. 18a,<br>Fost, taotry, t<br>trr<br>GATE VOLTAGE D.U.T. trr Qrr =  id dt<br>Ic<br>tx<br>10% +Vg<br>+Vg<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>DUT VOLTAGE<br>Vce<br>AND CURRENT Vpk<br>Irr<br>Vcc [[10% Ic]] 90% Ic Ipk<br>Ic<br>DIODE RECOVERY<br>WAVEFORMS<br>PANG td(on) tr 5% Vce _— peeeeceeeeeeeereereece<br>t2<br>Eon = Vce ie dt t4<br>t1 Erec = Vd id dt<br>t3<br>t1 t2 DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>∫<br>∫<br>∫<br>∫<br>**----- End of picture text -----**<br>


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GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [[10% Ic]] 90% Ic Ipk<br>Ic<br>PANG td(on) tr 5% Vce<br>t2<br>Eon = Vce ie dt<br>t1<br>t1 t2<br>∫<br>**----- End of picture text -----**<br>


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Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>VOLTAGE IN D.U.T.<br>CURRENT IN D1<br>t0 t1 t2<br>**----- End of picture text -----**<br>


Figure 18e. 

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L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br>


Figure 19. 

Figure 20. 

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## Notes: 

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Ω<br>**----- End of picture text -----**<br>


≤ ≤ 

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EXAMPLE: THIS IS AN IRFPE30<br>WITH ASSEMBLY  PART NUMBER<br>LOT CODE 5657 INTERNATIONAL poe<br>ASSEMBLED ON WW 35, 2000 RECTIFIER IRFPE30<br>IN THE ASSEMBLY LINE "H" Note:   "P" in assembly line LOGO . IQR 56           57 035H DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 0 =  2000<br>LOT CODE WEEK 35<br>LINE H<br>**----- End of picture text -----**<br>


**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** _Data and specifications subject to change without notice._ 06/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4pc30udpbf/igbt-to-247/dp/9105093)
---

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