# IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:9105026/)

**URL**: https://novapart.co/products/IRG4BC40WPBF/igbt-40-a-25-v-160-w-600-to-220ab-3-pins
**SKU**: IRG4BC40WPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €3.3100
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220AB |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9105026/)

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≤ ≤ Ω 

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 1000<br>See eee=<br>T  = 25  CJ °<br>a a a<br> 100<br>T  = 150  CJ °<br>fF | wl | | |<br> 10 AL<br>| |<br>V      = 15VGE<br> 1 p ep 80µs PULSE WIDTH<br>1.0 2.0 3.0 4.0 5.0<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>pf<br>a ee ee ee ee<br> 100<br>T  = 150  CJ °<br>4<br> 10 Li T  = 25  CJ ° ee eee eeel<br>V      = 50VCC<br>e e 5µs PULSE WIDTH<br> 1<br>5 7 9 11<br>V     , Gate-to-Emitter Voltage (V)GE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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50 3.0<br>V      = 15VGE<br>80 us PULSE WIDTH<br>ptti ti ti td EE E<br>40 I   =       AC 40<br>2.5 _—— a<br>SoS ee<br>> | EEE ~~ o<br>30<br>NE sera tt<br>I   =       AC 20<br>2.0<br>COOERCCEP)) = R R<br>20 I   =       AC 10<br>pif tt IN a Se<br>4 tN OO Ee D n oe<br>1.5<br>Soeeceee<br>10 Pit tT eyTIN<br>0 PT EET TTT rx 1.0 PPE EEE EEEEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (  C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 1 ==<br>eS ee ee east neil<br>D = 0.50<br>ce arate en es ee Ll<br>rr<br>e 0.20 OnA pwneea |<br>0.1 ee 0.10 ea Aeee ee ee | PDM<br>0.05<br>t1<br>cies O—oeaeZ eee<br>0.02 SINGLE PULSE t2<br>St 0.01  b e: (THERMAL RESPONSE) ace  0 Notes:<br>wae o> liemneneea Ail ||<br>1. Duty factor D = t   / t1 2<br>2. Peak TJ = PDM x  Z thJC + TC<br>0.01 S TR TTIIl AIT<br>0.00001 alll 0.0001 A 0.001 ET 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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4000<br>VGE = 0V, f = 1MHz<br>Cies = Cge + Cgc , C      SHORTEDce<br>Cres = Cgc<br>TT] Coes = Cce + Cgc<br>3000 \ |<br>P S Cies U TT<br>Naa Su t<br>2000<br>||<br>| alll<br>Coes<br>1000 INET EET<br>Cres<br>eS EE<br>P ~RLhoo<br>0<br> 1  10  100<br>V     , Collector-to-Emitter Voltage (V)CE<br>Fig. 7 - Typical Capacitance vs.<br>Collector-to-Emitter Voltage<br>1.0<br>V      = 480VCC<br>0.9 V      = 15VT      = 25    CJGE °<br>I       = 20AC | | | | | PF<br>0.8 a rt CLAW<br>0.7<br>Poptea<br>Sa<br>0.6<br>a<br>4Aeeeeeee<br>0.5 TTATLLLT<br>0.40.3 2Yia {it eei ttttt<br>10 20 30 40 50 60<br>R    , Gate Resistance (Ohm)G  (Ω)<br>C, Capacitance (pF)<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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2.0<br>R      G ΩOhm<br>T      = 150  CJ °<br>V      = 480VCC | ||Via<br>V      = 15VGE<br>1.5 || iYLFan<br>T TT Tys Z|<br>1.0 aaa / ane<br>||| || |||<br>0.5 | | 4a4 | ||| | |<br>4<br>0.0<br>5 15 25 35 45<br>I    , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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 1000<br>V      = 20VGE<br>T      = 125  CJ o<br>| a<br>a ||||<br>nN|||<br> 100 IE Com | CN II<br>740ceeeeeee<br>7 | | ll<br>eelee<br>SAFE OPERATING AREA<br> 10<br> 1  10  100  1000<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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L D.U.T.<br>V  *<br>C<br>50V<br>1000V<br>(0)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br>   will increase to obtain rated Id.<br>**----- End of picture text -----**<br>


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RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br>


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IC<br>000 N<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ch<br>o<br>(©)<br>J \<br>90%<br>10%<br>VC<br>90%<br>ee (Toy td(off) 2<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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Note:   "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010 

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4bc40wpbf/igbt-to-220/dp/9105026)
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