# IGBT, 40 A, 2.4 V, 160 W, 600 V, TO-220AB, 3 Pins
**URL**: https://novapart.co/products/IRG4BC40UPBF/igbt-40-a-24-v-160-w-600-to-220ab-3-pins
**SKU**: IRG4BC40UPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €1.2800
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220AB |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 40A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:9104992/)
## IRG4BC40UPbF
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C
G
E
n-channel
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TO-220AB
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# θ ~~|dunctionto-CaseSOSOS™~—S Ric Parameter Min. Typ. Max.~~ Units θ ~~[Ros SP | [Rua | Case-to-Sink, flat, greased surface |__| 080 |_| °CW. Wt |~~ Junetion-to-Ambient,Weight typical socket ~~mount |__|~~ ------ ~~----~~ 2 (0.07) ~~| 60~~ ------ ~~__|~~ |g (0z) www.irf.com
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## IRG4BC40UPbF
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[Varccs _| Collector-to-E itte Breakdown Voltage | 600 ---- | ---- _V_| Vor= OV, lo = 250A
∆ ∆
|_Vieryces! | Vce(on) |T| Emitt Collector-to-Emitter Temp er -to-Collectorature Coeff. Breakdownof Saturation BreakdownVoltage Voltage Voltage|© || --------18 ||1.72||0.63---- |- 2.1 --- -| | V/°CV_|| V Ic ce=0V.lc=1.0Aoce = =20AOV, Io= 1.0mA
| | ---- ]2.15]---| V_ | Io= 40a
\Vcen | ---- [1.7 | ---- | Ic = 20A, Ty = 150°C
∆ ∆
|_Voeqn/ | Gate Threshold Voltage | 3.0 | ---- | 6.0 | Voce = Vee, Ic = 250A
le | TJ ForwaTempe r atured TransconductanceCoeff. of Threshold© Voltagd|| ----14 || -1318 | -- - - - |[mV/*C]S$ | V oeoe== Voc,100V,loIc= =250A208
| oes | Zero Gate Voltage Collector Current | ---- ---- | | ---- ---- | | 250 2.0|| yA | Voce Voe = OV, = OV, VoceVce = = 10V,600V
| ---- | ---- [2500] Voe = OV, Vor = 600V,
IcES Gate-to-Emitter Leakage Current ---- | ---- [+100] nA | Voce = +20V
Switching Characteristics @ Ty = 25°C (unless otherwise specified)
[Qg Parameter Min.|Typ. |Max. | Units
[Que | TotalGate -GateEmitterChargeCharge(turn-on)(turn-on) || ~~~---- ||10016 |[15025|| nC | Voclo = 208= 400v
[Qgc____| Gate - Collector Charge (turn-on) | ---- | 40 | 60 | Voce = 15V
[tajon) | Turn-OnDelayTime | ~~ | 34 | ~~ | T)=25°C
te OTRiseTime
Ω
ftom | 19 | | is | Io = 208, Veo = 480
te | Turn-Off Delay Time = | 110 [175 | | Ve = 15V, Ro = 10
[En | Falltime | | 120 | 180 | Energy losses include
[Er | Turn-On Switching Loss| ~~~ | 0.32 | ---- |
[Es | Turn-Off Switching Loss | --~- 0.35 | --- | mi | See Fig. 10, 11, 13, 14
ftscon) | Total SwitchingLoss | ~~ [0.67 | 1.0 |
te | Turn-OnDelayTime | == | 30 | | T= 150°C,
Ω
[tao RiseTime = | 19 [| nss | Ic = 20, Veo = 480V
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≤ ≤
Ω
www.irf.com
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IRG4BC40UPbF
TER Rectifier
60
For both: Triangular wave:
Duty cycle: 50%
50 T = 125°CJ I
T = 90°Csink
Gate drive as specified we |
e e Power Dissipation = 28W Clamp voltage:
40 80% of rated
— | |IP e N
Square wave:
-2 30 (| 60% of rated E T PABast nnnal
voltage
oFPP 2010 Ideal diodesI e LTEe Pe EEN
r wella
0 i ii
0.1 1 10 100
f, Frequency (kHz)
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1000
ee |
100
T = 25°CJ
en y n
T = 150°CJ
ee ee
10
SA A
V = 15VGE
en
1 FL | LLY 20us PULSE WIDTH|
0.1 1 10
V , Collector-to-Emitter Voltage (V)CE
I , Collector-to-Emitter Current (A)C
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1000
ee ee ee
100
T = 150°CJ
| | | “A | ft
T = 25°CJ
10
Ye
V = 10VCC
1 PP| ft | 5yus PULSEce WIDTHJ wore
4 6 8 10 12
V , Gate-to-Emitter Voltage (V)GE
I , Collector-to-Emitter Current (A)C
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www.irf.com
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## IRG4BC40UPbF
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40 ~NNY Vo = 15Vi 2.5 Db80ys =15VPULSE WIDTH |paane
I = 40AC
30 PONE ArT Py
> 2.0 ee e
ERE NUE at
20 Pt tN PPPPE I = 20AC
IN 1.5 aT
10 ee Ne So Lt I = 10AC TAT
A
0 1.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
T , Case Temperature (°C)C T , Junction Temperature (°C)J
Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature Junction Temperature
1
PE
eea CYne mee ee
a — cD
| ng O_o
nee
D = 0.50
TT
_ F Tee e at ee | e e) ee||
0.20
0.1 a |_| paseeaA | EL
0.10
Pp i eeresFFaeC P TT DM
eeeT AAA
0.05 t
1
—| eAam SINGLE PULSE aHoey + t 2
0.02 (THERMAL RESPONSE)
Pal 9 7 i Oe a| DL t Oo _
0.01 1. Duty factor D = t / t 1 2
OE
0.01
UI TEI ET ee cn oe ones
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)1
Maximum DC Collector Current (A) CE
V , Collector-to-Emitter Voltage (V)
thJC
Thermal Response (Z )
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www.irf.com
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## IRG4BC40UPbF
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20
4000
V = 0V, f = 1MHzGE
C = C + C , C SHORTEDies ge gc ce
C = C
J C = C + Cres gc 16 rca TPT
oes ce gc
3000 s eae
Ss [es] 12 po
2000 KETTLESe Rete
es 8
O E E lll| pp py Z
1000 es
4
PAGReORenEe
A:NUT [SS][ ut] GARE
Se e e [ee] |
0 A 0
eel 0 pot 20 | 40 tj 60 80 100 120
1 10 100
V , Collector-to-Emitter Voltage (V)CE Q , Total Gate Charge (nC)g
C, Capacitance (pF)
GE
V , Gate-to-Emitter Voltage (V)
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1.1 10
R = 10G Ω
q = 15V V = 15VGE SS ee ee
V = 480VCC
1.0 T= 480V Pt et | Td PERE EE I = 40AC EES
0.9 Seeeeeee4ee Pf fp ey I = 20AC
1
PTY} oe ee
pf yt yt yt eer tt | |
0.8 I = 10AC
0.7 SE WA Pa ae EP ae
ae HE eer
A REEDS a 00 DER Genemene
0.6 PP A 0.1 ELE
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160
R , Gate Resistance (G Ω) T , Junction Temperature (°C)J
Total Switching Losses (mJ) Total Switching Losses (mJ)
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www.irf.com
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## IRG4BC40UPbF
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4.03.0 aeql =1 Sfeee) ft) | 1000 a T 20V Sepp
Spe / Smet
Bae 100 EN eainl
V Py
2.0
oleaeaaa P-—7AHparcoresarncme)HH Hh|ill
10
1.0 Saeaneeee a
Lf PA ay
PY ff | ee |
0.0 pe A 1 PC7 eeCTill
0 10 20 30 40 50 1 10 100 1000
I , Collector-to-Emitter Current (A)C V , Collector-to-Emitter Voltage (V)CE
Total Switching Losses (mJ)
I , Collector-to-Emitter Current (A)C
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www.irf.com
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## IRG4BC40UPbF
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L D.U.T.
V *
C
50V
1000V
0)
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
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RL = VCCICM
480µF
0 - VCC
Pulsed Collector Current
Test Circuit
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IC
000 NN
L
Driver* D.U.T.
VC
50V
1000V
T (IE) Ci)
o
(©)
JV
90%
10%
VC
90%
SS See (ose td(off) 2 a
IC 5%10%
tr tf
t d(on) t=5µs
Eon Eoff
E = (E +E )ts on off
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www.irf.com
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## IRG4BC40UPbF
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Note: "P" in assembly line
position indicates "Lead-Free"
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Data and specifications subject to change without notice.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010
www.irf.com
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## Links
- [View this product on Novapart](https://novapart.co/products/IRG4BC40UPBF/igbt-40-a-24-v-160-w-600-to-220ab-3-pins)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4bc40upbf/igbt-to-220/dp/9104992)
---
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