# IGBT, 49 A, 1.85 V, 160 W, 600 V, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:9105018/)

**URL**: https://novapart.co/products/IRG4BC40FPBF/igbt-49-a-185-v-160-w-600-to-220ab-3-pins
**SKU**: IRG4BC40FPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €2.7900
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Power Dissipation | 160W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220AB |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 49A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.85V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:9105018/)

## IRG4BC40FPbF 

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TO-220AB<br>**----- End of picture text -----**<br>


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IRG4BC40FPbF<br>TOR Rectifier<br>Electrical Characteristics @ Ty = 25°C (unless otherwise specified)<br>Parameter Min. |Typ.|Max.|Units| Conditions |<br>∆ ∆<br>eceos_— {Eri cots reston Vote @ [18 {—"[— | V [Vee os tok<br>| — [1.50] 1.7 | Ic =27A Voe = 15V<br>Se<br>[Voz |— [156 | — | lc =27A,, Ty = 150°C<br>∆ ∆<br>F Ven [GateTul TemperatureTrreshoddCoeff.Votageof Threshold_——=«iVoltage | 30— |[12 — |[—60 ||mVFC| Vee =Vee.le=250H8<br>=<br>fe [Forward Transconductance © =f 92 | 12 |— | S | Voz 10V,b=27A i<br>— | 20 | Vo = OV, Voce = 10V, Ty = 25°C<br>no Seco<br>| —<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>| [Parameter | Min. | Typ. (Max.|units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 100 | 150 | lo = 27A<br>FQ. | Gate = Collector Charge (turn-on) [— [38 [83 | | Voe=15V<br>[tao |Turn-OnDelayTime<br>SSS~*~—s<br>ft; '([RiseTime ——SSSC«d | 21 8 | — | g | Tue DBCC<br>Ω<br>fh =i [Falitime—SSSSCS~C~S~SCSCS]<br>Loss__———~(|<br>Ex | Tumn-On Switching ATO AO] | Vee = 15V, R= 10<br>Loss|<br>[Er[Ets | Turn-Off Switching —— |037||1.81|— — |_|| mv | SeeEnergyFig. losses10, 11, include13, 14 "tail<br>sen—_[te | T otalun- Switchingl o ss neeyrinef=| — [2.18 |fas f=28 J | ni<br>Ω<br>[tan [RiseTime | — | tt | — | lo = 27A, Voc = 480V<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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60<br>For both: Triangular wave:<br>Duty cycle: 50%<br>50 aBane | T   = 125°CJ e ee \ I aN<br>T        = 90°Csink<br>Gate drive as specified<br>Power Dissipation = 28W Clamp voltage:<br>- 40 CO IN 80% of rated<br>Square wave:<br>©= 30 P 60% of rated O neTTINGIN | [ttt] al<br>        voltage<br>aBL 20 l Ke I Tirosl  PSUacl TTT<br>100 e a r Ideal diodes HU TT rtil|<br>0.1 1 10 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(For square wave, |=lRms of fundamental; for triangular wave, |=Ipx)<br>1000 1000<br>a ee ee a ea ee ee<br>~e Po | | -F tt tty | | | | dt dP dt | dT rT |<br>T  = 25°CJ<br>Ss 100 L T 100 ee<br>T  = 150°CJ<br>T  = 150°CJ<br>7= |...——fA  a attt 4 |RS| | TAA fT Tf ft ft<br>TT$ ry Ze ee  e e Pi lAA tT<br>PL 10 F4 10 LAAA T  = 25°CJ s,|| ,|| ft|<br>Sn a ay A eseG<br>ee es PT<br>° V     = 15VGE yt V      = 50VCC<br>1 PT 20us PULSE WIDTH A 1 Vanef 5us PULSE WIDTH]<br>1 10 5 6 7 8 9 10 11 12<br>V     , Collector-to-Emitter Voltage (V)CE V    , Gate-to-Emitter Voltage (V)GE<br>I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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50<br>2.5<br>SS S) op e I    = 54AC<br>40<br>pM Tepe<br>PENS 2.0 eer L E<br>30<br>| IN aaa<br>20 PS OEE ERED I    = 27AC<br>ee 1.5 itLeet<br>10<br>PNG TT T<br>aN a I    = 14AC<br>0 PENN 1.0 OEE<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (°C)C T  , Junction Temperature (°C)J<br>Maximum DC Collector Current (A)<br>CE<br>V     , Collector-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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1<br>ee<br>eea rrcg ce a a cil<br>|<br>D = 0.50<br>FT Naeea0ee TTen lll<br>0.20<br>0.1 eee a a A<br>0.10<br>a en ee | P T DM<br>0.05 t<br>1<br>| S       SINGLE PULSE O | t 2<br>0.02 (THERMAL RESPONSE)<br>| 9 7 i Oe | DL t _<br>ea e ee t e<br>0.01 1. Duty factor D =  t   / t 1 2<br>UN M<br>0.01<br>FIM FLT ieee oe ee sree<br>0.00001 0.0001 0.001 0.01 0.1 1 10<br>t   , Rectangular Pulse Duration (sec)1<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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4000 2016<br>Cres = Cce<br>LE==] 16 FEE<br>3000<br>eA SS s oem PE<br>3 Ye w+ | | 12 Pot TK<br>2000<br>s Littrell SaGn<br>8<br>PNT Gn ennn<br>S Eee<br>1000 kN es | |<br>4<br>Sc s 7<br>0 pS YR | Waa A 0 ABER<br>1 10 100 0 20 40 60 80 100<br>V    , Collector-to-Emitter Voltage (V)CE Q  , Total Gate Charge (nC)gg<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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2016 FEE<br>PE<br>12 Pot TK<br>SaGn<br>8<br>Gn ennn<br>Eee<br>|<br>4 7<br>0 ABER<br>0 20 40 60 80 100 120<br>Q  , Total Gate Charge (nC)gg<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>**----- End of picture text -----**<br>


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10<br>PietPiety yeTepePeep tT pt yeEEEye I    = 54AC EE | |<br>POPC<br>I    = 27AC<br>Leerp= Te<br>1 I    = 14AC<br>te ee<br>Bap =<br>RPP= anne<br>PE<br>PE  R      = 10G Ω<br> V      = 15VGE<br>EEE  V      = 480VCC<br>0.1 EE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>T  , Junction Temperature (°C)J<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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1000<br>ee<br>ET<br>100<br>eea<br>A<br>10 | nh<br>ee<br>1 |en il<br>1 10 100 1000<br>V     , Collector-to-Emitter Voltage (V)CE<br>I   , Collector-to-Emitter Current (A)C<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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L D.U.T.<br>V  *<br>C<br>50V<br>1000V<br>(0)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor<br>   will increase to obtain rated Id.<br>**----- End of picture text -----**<br>


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RL = VCCICM<br>480µF<br>0 - VCC<br>Pulsed Collector Current<br>Test Circuit<br>**----- End of picture text -----**<br>


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IC<br>000 NN<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ci)<br>o<br>(©)<br>JV<br>90%<br>10%<br>VC<br>90%<br>SS See (ose td(off) 2 a<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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## IRG4BC40FPbF 

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Note:   "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2010 

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4bc40fpbf/igbt-to-220/dp/9105018)
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