# IGBT, 34 A, 1.6 V, 100 W, 600 V, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:8650403/)

**URL**: https://novapart.co/products/IRG4BC30SPBF/igbt-34-a-16-v-100-w-600-to-220ab-3-pins
**SKU**: IRG4BC30SPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.7370
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | IRG4 |
| Power Dissipation | 100W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220AB |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 34A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 1.6V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650403/)

## IRG4BC30SPbF 

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C<br>_<br>Vces =<br>G VcE(on) typ. =<br>E @Voe = 15V,<br>n-channel<br>**----- End of picture text -----**<br>


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TO-220AB<br>**----- End of picture text -----**<br>


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∆ ∆<br>ence —[erert ctor Beaton vetge © [ 18 {—{ — [-V-[ver 0 oxtA<br>F Viences Tu | Temperature Coeff of Breakdown Votlage | — [075] — | VPC | Vee =OV, lo = 1 OmA<br>eee| — | 1.40] 1.6 | Ic =18A Voe = 15V<br>[Voce | — |145| — | lc = 18A, Ty= 150°C<br>∆ ∆<br>F Veet) Tu[Gate| TemperatureThresholdCoeffVottageof Threshold Votage|| 30— | -11— ||0— ||mVPC| Voe=Vec,lo=250WA =<br>=<br>fe [Forward Transconductance | 60 | 11 | — | S [Vee 100V,o=18A<br>P= = p20<br>“potent<br>P= [=<br>Eta” teeing aes —<br>[ies | GaletoEnitier Leakage Current [—[— [09] [2100] WA [Voc=#20V<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>[Qg||| [Parameter] Total Gate Charge (turn-on) | Min.— || Typ.50 | | Max.| units]75 | lo = 18A__Conaitions<br>Qs. | Gate Collector Charge (turn-on) | — | 17] 26| | Voe=15V<br>[tao |Turn-OnDelayTimeSST — | 22 | —<br>=e  T)=25°C Ω<br>fe «dt [FaliTime—SS~SCSCSCSCSS]<br>[Eon BO] SHO] | Voce = 15V, RG = 2<br>Loss____—~+|<br>[Ear= | TuTu r mn -O ffn Switching Loss _———*| —— [026]|345| —— |_|| mJ | EnergySeeFig. losses9, 10, include14  "ta<br>seytr [Turon Dey Tne f=esefat f= |<br>Ω<br>[tao |[RiseTimeTurn-Off DelayTime || —S|| 71 9 0|| —— | VorIo = 18A,= 15V, VeoRe = 480V= 23<br>Ex | Total Switching Loss _—~—S~S=«d [6.55] — | mJ | See Fig. 11, 14<br>[te | internal Emitter Inauctance | — | 75| — | nH | Measured 5mm from package<br>[Ces | Input Capacitance SSSC*dtC OO] — || Ve = OV<br>=30V See Fig.7<br>eeCres Reverse Transfer Capacitance — 13 — oef =1.0MHz<br>Notes:<br>® Repetitive rating; Vee = 20V, pulse width limited by<br>max. junction temperature. ( See fig. 13b )<br>≤  ≤<br>® Voc = 80%(Voes), Vor = 20V, L = 10HH, Ro=23 Ω , @® Pulse width 80us; duty factor 0.1%.<br>**----- End of picture text -----**<br>


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50<br>For both: Triangular wave:<br>Duty cycle: 50%<br>40 |I| E T   = 125°C PT J  Tete Ey | | I PT Tet<br>T        = 90°Csink<br>Gate drive as specified<br>Power Dissipation =  W Clamp voltage:<br>80% of rated<br>x 30 PN ai<br>= | | Ba! TTT y<br>o Square wave: ceeree<br>60% of rated<br>         voltage<br>xo)bo 20 IN= EE— E<br>I<br>[s 10 eAn u [Pos“AR<br>Ideal diodes<br>0 I * EHii<br>0.1 1 Ee 10 HE 100<br>f, Frequency (kHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100  100<br>T  = 25  CJ o<br>ee4 Zoe T  = 150  CJ o eee Pi T  = 150  CJ e o | [Levy] r| | | |<br> 10<br>7A fi Ceo"Corn p | i Lae|pe| |<br> 10<br>T  = 25  CJ o<br>ee | AZ T<br>ee ee  1 / / ae<br>omens oe<br>rr ee e e eee<br>V      = 15VGE V      = 50VCC<br> 1  1 P| | 20µs PULSE WIDTH 10 0.1 5 fA}A 6 | | 7 y 5µs PULSE WIDTH8 9 10<br>V     , Collector-to-Emitter Voltage (V)CE V     , Gate-to-Emitter Voltage (V)GE<br>C C<br>I   ,  Collector-to-Emitter Current (A) I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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35 3.0<br>V      = 15VGE<br>80 us PULSE WIDTH<br>PSECPN EtEy EE E<br>30 ee PEEP EEE<br>25 eea ee ee 2.5 EEE er I   =       AC 36 —<br>20<br>a ON pity<br>2.0<br>15<br>oeee EEEE EEEE<br>I   =       AC 18<br>10<br>prep ee 1.5<br>PF | | | tT PN| tl | hd LY PETE =tT<br>5 I   =  C<br>ee OOO 0 OO a<br>0 ee 1.0 PETEa  eeea<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (    C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10<br>a<br>P| TE TT ET TE ET ET<br> 1 |<br>D = 0.50<br>      0.20<br>eT ee ——__.e ee eee<br>      0.10 St PDM<br>0.1       0.05 t1<br>      0.02 t2<br>      0.01 as SINGLE PULSE CO<br>(THERMAL RESPONSE) Notes:<br>1. Duty factor D = t   / t1 2<br>eo 2. Peak TJ = PDM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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2000 20<br>VGE = 0V, f = 1MHz VCC = 400V<br>Cies = Cge + Cgc , C      SHORTEDce I C = 18A<br>Cres = Cgc<br>| Coes = Cce + Cgc 16 L ET<br>TT Po<br>1500<br>PS ) EEE<br>Cies 12<br>1000 i fe eee SEGGG0087400CPT<br>8<br>INTE TTT pitt tae<br>a) al yA<br>500<br>Coes 4<br>Cres<br>e K 7-COECE<br>0 i ell 0 ARGS ESESEEEe<br> 1  10  100 0 10 20 30 40 50 60<br>V     , Collector-to-Emitter Voltage (V)CE Q   , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>3.80  100<br>V      = 480VCC R      = 23OhmG Ω<br>V      = 15VT      = 25   CJGE ° V      = 15VV      = 480VGECC<br>3.76 I       = 18AC EEE PE<br>o£ Pttty| ae :feeeeee I   =       AC ea 36 e<br> 10<br>3.72 HE EB) BERSEEOeeeeeee C I   =       AC e 18 e<br>I   =  C<br>3.68<br>PTErrly | tt TTP e<br> 1<br>3.64 pitt tT ET Tt a ea al al a be Ree eee ce<br>PTT TT TT Ty G0 G8 Bee On Oe<br>3.60 Pit tT tT | Et 0.1 OO REE eo ee<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>R    , Gate Resistance (Ohm)G  Ω T  , Junction Temperature (  C )J °<br>C, Capacitance (pF)<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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15.0<br>R      = 23G Ωhm<br>T      = 150  CJ °<br>V      = 480VCC<br>12.0 V      = 15VGE<br>“TT“unTI<br>e Zee<br>9.0 TT TT IA TTL<br>CEPA<br>6.0<br>TITY ELLE<br>3.0 Pt tT Tt ET tt<br>0.0 Pt tT ET ey ty et<br>0 10 20 30 40 50<br>I    , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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 1000<br>V      = 20VGE<br>T      = 125  CJ o<br>a ||<br> 100<br>a<br>eee certaaSai<br>=H at<br> 10<br>ce<br>|<br>SAFE OPERATING AREA<br> 1 eee el<br> 1  10  100  1000<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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RL = VCCICM<br>L D.U.T.<br>V  *<br>C<br>50V<br>1000V 0 - VCC 480µF<br>(0)<br>(2)<br>* Driver same type as D.U.T.; Vc = 80% of Vce(max)<br>* Note: Due to the 50V power supply, pulse width and inductor Pulsed Collector Current<br>   will increase to obtain rated Id.<br>Test Circuit<br>**----- End of picture text -----**<br>


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IC<br>000 NN<br>L<br>Driver* D.U.T.<br>VC<br>50V<br>1000V<br>T (IE) Ch<br>®<br>(©)<br>J \<br>90%<br>10%<br>VC<br>90%<br>ee (Toy td(off) 2<br>IC 5%10%<br>tr tf<br>t d(on) t=5µs<br>Eon Eoff<br>E   = (E    +E    )ts        on      off<br>**----- End of picture text -----**<br>


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Note:   "P" in assembly line<br>position indicates "Lead-Free"<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 01/2010 

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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4bc30spbf/igbt-600v-34a-to-220/dp/8650403)
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