# IGBT, 16 A, 2.27 V, 60 W, 600 V, TO-220AB, 3 Pins

![Product image](https://novapart.co/image/farnell:1463244/)

**URL**: https://novapart.co/products/IRG4BC20KDPBF/igbt-16-a-227-v-60-w-600-to-220ab-3-pins
**SKU**: IRG4BC20KDPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || IGBTs || Single IGBTs
**Price**: €0.9220
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Product Range | IRG4 |
| Power Dissipation | 60W |
| Transistor Mounting | Through Hole |
| Transistor Case Style | TO-220AB |
| Operating Temperature Max | 150°C |
| Continuous Collector Current | 16A |
| Collector Emitter Voltage Max | 600V |
| Collector Emitter Saturation Voltage | 2.27V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1463244/)

## **Features** 

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TO-220AB<br>**----- End of picture text -----**<br>


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[Visaces | Colestorto-Emiter Breakdown Vottage® | 600| — | — | V | Voe=OV,lo=250uA<br>∆ ∆<br>F Viserces Ty | Temperature Coeff. of Breakdown Votage | — [0.40| — | VC | Voe=OV,Io=1.0mA<br>imVce(on) Collector-to-Emitter Saturation Voltage | — [2.27]2.8 | s Ic = 9.0A Vee = 15V<br>|Vcen | — [243]S— | 06 Ic = 9.0A, Ty = 150°C<br>∆ ∆<br>[Veen __|Gate Threshold Voltage | 3.0 | — | 6.0 |<br>Fie Tu | Temperature Coeff of Threshold Votage | — | 10 | — |mVPO[ Voe=Voe,lo= 250A<br>feVemIces [ForwardBeeZero GateTransconductance@VoltageSessa"Collector Current|| 287— | 43[— from]|250]— | SpA |We Vce=100V,lo=90Aeov.vee toasts<br>Se PatinaDiode Forward Voltage Drop |}Site]— [14] 14.7] V |beeen Ic=8.0A neme See Fig."| 13<br>Switching Characteristics @ Ty = 25°C (unless otherwise specified)<br>|| Parameter | Min. | Typ. Max. | units| Conditions<br>[Q, | Total Gate Charge (turn-on) | — | 34 | 51 | Ic = 9.0A<br>Qj | Gate= Coltector Charge turn-on) | — [14] 21 | | Voe=18V<br>fran<br>—S«*dRiseTime—SS~—SsSS<br>fh Boag Tne<br>[taom MT |] | Ty DBC<br>Ω<br>ft | Turn-Off DelayTime | — ‘| 180 | 270 | lc = 9.0A, Veo = 480V<br>[Eon | FalTime | = | 72 | 110 Vor = 15V, Re = 50<br>Loss|<br>[Eo | Turn-O ffn SwitchSwitch ing Loss| — [0.3 40 ]  —— || ma J Ea n ergyd diode lossr e verses includerecovery "tail"<br>tsc Short Circuit Withstand Time 10 Us | Voc = 360V, Ty = 125°C<br>Ω<br>aon | Turm-On DelayTime —=S—~idC 1 | — || T= 180"C, See Fig. 11,14<br>ft [RiseTime | SH | 87 | Ic = 9.0, Voc = 480V<br>Ω<br>**----- End of picture text -----**<br>


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10<br>For both:<br>A |nie Duty cycle: 50%<br>8 | ee | T   = 125°CJ |<br>T        = 90°Csink<br>Gate drive as specified<br>Power Dissipation =    W<br>LE LP ET<br>6<br>Square wave:<br>60% of rated<br>         voltage<br>4<br>ray | | ™ ee<br>I<br>e m ULMULTETI SKIL<br>2<br>) Ideal diodes FE ANNU<br><i JUL ~ SU<br>C e a hi<br>0<br>0.1  1  10  100<br>f, Frequency (KHz)<br>Fig. 1 - Typical Load Current vs. Frequency<br>(Load Current = Ipms of fundamental)<br> 100 ———  100 a<br>ee ee ee oe ee aeeoeeeoe<br>es a es ee ee ee ee<br>po T  = 25  CJ o a ee ee ee ee<br>a nna T  = 150  CJ o eeeaea<br> 10  10<br>Aeon e e T  = 150  CJJ ee) Ae o  Ae<br>a anne ysee, A ee ee eee en ES aey7 2 Aeeeeeeeey7 2 Aeeeeeee7 2 Aeeeeeee 2 Aeeeeeee Aeeeeeeeeeeeeeeeeeeeeee ES eee ===eee ===eeeeee<br>T  = 25  CJJ o<br>| / Ae eee ( ann |<br>V      = 15VGE V      = 50VCCCC<br> 1 fF | | 20µs PULSE WIDTH Tt  1 wil 5µs PULSE WIDTH |<br> 1  10 5 10 15 20<br>V     , Collector-to-Emitter Voltage (V)CE V     , Gate-to-Emitter Voltage (V)GEGE<br>LOAD CURRENT (A)<br>C C<br>I   ,  Collector-to-Emitter Current (A) I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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 100 a<br>aeeoeeeoe<br>a es ee ee ee ee<br>a ee ee ee ee<br>eeeaea<br> 10<br>o<br>T  = 150  CJJ ee) Ae<br>ES ES<br>en<br>aey7 2 Aeeeeeeeey7 2 Aeeeeeee7 2 Aeeeeeee 2 Aeeeeeee Aeeeeeeeeeeeeeeeeeeeeee eee ===eee ===eeeeee<br>T  = 25  CJJ o<br>( ann |<br>V      = 50VCCCC<br> 1 wil 5µs PULSE WIDTH |<br>5 10 15 20<br>V     , Gate-to-Emitter Voltage (V)GEGE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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20 5.0<br>V      = 15VGE<br>80 us PULSE WIDTH<br>THT) «6 [ee] [e]<br>| PETiTTT I   =       AC 18 Ty<br>15 aaaaaaaaa 4.0 6 ee<br>| |NI | |aa| | et 28 8 P =  2<br>aa|we| NXaaaa Ge08BeOe Oe eeoe= a<br>10 3.0<br>aaaa| |)NoINNaaa BEP=a8Bein BSOn P=Oe ode e I   = C<br>5 POPPIN} 2.0 ER R I   =       AC 4.5<br>N ee Tt ttt 4<br>0 aaaa| | aa| |N \ 1.0 28BEPit BR PtBe ee<br>25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>T   , Case Temperature (    C)C ° T   , Junction Temperature (  C)J °<br>Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage<br>Temperature vs. Junction Temperature<br> 10 po a aaeeee eee eee eetee<br>le mnnItl<br>D = 0.50<br> 1 a ease=a ||<br>0.20<br>PO 0.100.05 mn— PDM<br>0.1 e r<br>0.02 t1<br>0.01 SINGLE PULSE<br>Lr| | (THERMAL RESPONSE) ee t2<br>ee<br>|| Notes: ee ee<br>1. Duty factor D = t   / t1 2<br>PC P 2. Peak TJ = PDM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 Fe 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>Maximum DC Collector Current(A) CE<br>V     , Collector-to-Emitter Voltage(V)<br>thJC<br>Thermal Response (Z        )<br>**----- End of picture text -----**<br>


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800 VGE = 0V, f = 1MHz 20 VCC = 400V<br>CCiesres == CCgegc + Cgc , C      SHORTEDce I C = 9.0A<br>al Coes = Cce + Cgc 16 P TT<br>Ft Cer<br>600<br>PCIE TT p f<br>Cies 12<br>Nit ef ee |a de<br>400<br>eel ee<br>RL ll 8 ee ee<br>EE ll pf f |ttt<br>200<br>Coes 4<br>S NN >s ARR+ +<br>Cres<br>0 PS HieeilllEF 0 Pitty ty<br> 1  10  100 0 10 20 30 40<br>V     , Collector-to-Emitter Voltage (V)CE Q   , Total Gate Charge (nC)G<br>Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.<br>Collector-to-Emitter Voltage Gate-to-Emitter Voltage<br>0.8  10<br>V      = 480VCC R     G Ωhm<br>V      = 15VT      = 25   CI       = 9.0AJCGE ° Oe ee V      = 15VV      = 480VGECC SS Go Soee SSeS eee<br>I   =       AC 18<br>Ssaaeeee Gn Re Gn Ge OeOn RO G8 Oe<br>0.7<br>TT  1 for I   =  C<br>0.6 |) |) tTLL teemTT itt Bu eu uu ous OW GT C I   =       AC EDtT. 4.5<br>aavy |P| |P| |P| | O eG Oea Oe  Oe8 0ee eeBe So een<br>PPP) CEE<br>0.5 0.1<br>0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>(Ohm)Ω ) T  , Junction Temperature (  C )J °<br>C, Capacitance (pF)<br>GE<br>V     , Gate-to-Emitter Voltage (V)<br>Total Switching Losses (mJ) Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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3.0<br>R      =G Ωm<br>T      = 150  CJ °<br>V      = 480VCC<br>V      = 15VGE PEL): |<br>2.0<br>TELLTALESf<br>1.0 P| |P| |SYP| |P| |<br>WiJ<br>PY EE Ld |<br>0.0 SEcsnennne<br>0 4 8 12 16 20<br>I    , Collector-to-emitter Current (A)C<br>Total Switching Losses (mJ)<br>**----- End of picture text -----**<br>


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 100<br>V      = 20VGE<br>T      = 125  CJ o<br>|<br>ape eee ng<br>Vi,<br> 10 7A ||||<br>a A<br>oe | Hl<br>iyA||<br>SAFE OPERATING AREA<br> 1 AML<br> 1  10  100  1000<br>V     , Collector-to-Emitter Voltage (V)CE<br>C<br>I   ,  Collector-to-Emitter Current (A)<br>**----- End of picture text -----**<br>


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Collector-to-Emitter Current<br>100 ee<br>ee<br>es ee<br>Pi ft | tt ttt | | Pe<br>SRE EERE EE DY Za<br>PEtA<br>PLLA<br>10<br>a ee s/n<br>oe<br>es ee<br>rity] lf | | |<br>T  = 150°CJ<br>|| | | Yo nae<br>T  = 125°CJ<br>v/a T  =   25°CJ [i<br>1 iy / Eceewene<br>a 0 ee ee ee ee eee<br>ee oeee<br>ee | ee<br>Ee Fee<br>PAE<br>Ae<br>0.1<br>0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2<br> Forward Voltage Drop - V      (V)FM<br>F<br>Instantaneous Forward Current - I    (A)<br>**----- End of picture text -----**<br>


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100 100<br>V  = 200VR V  = 200VR<br>LLL T  = 125°CJ | T  = 125°CJ an oe csmnee:<br>T  = 25°CJ T  = 25°CJ<br>80<br>ar Lee<br>I   = 16AF<br>60<br>I   = 8.0AF<br>I   = 16AF<br>a 10 e e e<br>Seen FA<br>I   = 8.0AF<br>40 Seon Sa<br>e e e —s gan em I   = 4.0AF<br>I   = 4.0AF<br>20 a aaa<br>a  ne<br>0 es 1 Ft LLL<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>Fig. 14 - Typical Reverse Recovery vs. di;/dt Fig. 15 - Typical Recovery Current vs. dir/dt<br>500 10000<br>V  = 200VR V  = 200VR<br>[LLL T  = 125°CJ SS T  = 125°CJ<br>T  = 25°CJ T  = 25°CJ<br>400 Loz} ) a eee<br>1 LLL tr<br>300 il eee<br>I   = 16A F FTL 1000 | I   = 4.0AF Lg<br>I   = 8.0AF<br>| ae<br>200<br>I   = 16AF<br>I   = 8.0AF<br>SEEDo | OG<br>100<br>| |<br>[yl I    F = 4.0A<br>ee"<br>ee O [A] lllF<br>0 Se 100 aa<br>100 1000 100 1000<br>di  /dt - (A/µs)f di  /dt - (A/µs)f<br>t    -  (ns)rr I         - (A)IRRM<br>RR<br>Q       -  (nC)<br>di(rec)M/dt  -  (A/µs)<br>**----- End of picture text -----**<br>


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Same type<br>device as<br>D.U.T.<br>80% 430µF<br>of Vce D.U.T.<br>**----- End of picture text -----**<br>


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GATE VOLTAGE D.U.T.<br>10% +Vg<br>+Vg<br>DUT VOLTAGE<br>Vce<br>AND CURRENT<br>Vcc [10% Ic] 90% Ic Ipk<br>Ic<br>PAN td(on) tr 5% Vce G<br>t2<br>Eon =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>


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90% Vge<br>+Vge<br>Vce<br>90% Ic<br>10% Vce<br>Ic<br>Ic<br>5% Ic<br>td(off) tf<br>t1+5µS<br>Eoff =<br>t1<br>t1 t2<br>**----- End of picture text -----**<br>


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trr<br>trr<br>Ic — —! Qrr = t<br>tx<br>tx<br>10% Irr<br>10% Vcc<br>Vcc<br>Vpk<br>Irr<br>DIODE RECOVERY<br>WAVEFORMS<br>a eveeecenncsseeeernnnesstecen<br>t4<br>Erec =<br>t3<br>DIODE REVERSE<br>RECOVERY ENERGY<br>t3 t4<br>**----- End of picture text -----**<br>


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Vg GATE SIGNAL<br>DEVICE UNDER TEST<br>CURRENT D.U.T.<br>‘<br>’<br>:<br>L171 i<br>VOLTAGE IN D.U.T.<br>LOA't'<br>: CURRENT IN D1<br>’<br>:<br>t 1<br>1 1<br>Ut!<br>t0 t1 t2<br>**----- End of picture text -----**<br>


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L D.U.T.<br>1000V V *c<br>50V<br>6000µF<br> 100V<br>**----- End of picture text -----**<br>


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## Notes: 

- Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature 

- (figure 20) 

- VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω (figure 19) 

- Pulse width ≤ 80µs; duty factor ≤ 0.1%. 

- Pulse width 5.0µs, single shot. 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>15.24 (.600) | an Cc na<br>14.84 (.584) LEAD ASSIGNMENTS<br>ee 1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>3- SOURCE       4 - DRAIN 3- EMITTER<br>| lar 4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X2.54 (.100) FE [1.40 (.055)] 1.15 (.045) | 3X0.36  (.014)        M    B   A   M [0.93 (.037)] 0.69 (.027) =TI 2.92 (.115)2.64 (.104)3X [0.55 (.022)] 0.46 (.018)<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>     2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.<br>Part Marking Information<br>EXAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMB LED ON WW 19, 1997 INT E RNAT IONAL PART  NUMBER<br>IN T HE AS S EMB LY LINE "C" RECT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>AS S EMB LY YEAR 7 =  1997<br>LOT  CODE WEEK 19<br>L INE C<br>a<br>Data and specifications subject to change without notice.<br>International<br>**----- End of picture text -----**<br>


**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/03 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irg4bc20kdpbf/igbt-n-600v-16a-to-220ab/dp/1463244)
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