# Power MOSFET, N Channel, 55 V, 64 A, 0.014 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2781147/)

**URL**: https://novapart.co/products/IRFZ48NSTRLPBF/power-mosfet-n-channel-55-v-64-a-0014-ohm-to-263ab
**SKU**: IRFZ48NSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5630
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 130W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 64A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781147/)

Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. 

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D<br>VDSS = 55V<br>R  = 0.014Ω<br>DS(on)<br>G<br>ID = 64A<br>S<br>**----- End of picture text -----**<br>


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   D   Pak2  TO-262<br>**----- End of picture text -----**<br>


The through-hole version (IRFZ48NL) is available for lowprofile applications. 

## **Absolute Maximum Ratings** 

|~~ee~~|~~nD~~|||
|---|---|---|---|
|~~ee~~<br>~~a~~~~**e**~~|**Parameter**<br>~~nD~~<br>~~**e**e~~|**Max.**<br>**Units**<br>~~so~~|**Units**<br>~~so~~|
|ID@ TC= 25°C<br>~~ee~~<br>~~a~~~~**e**~~|Continuous Drain Current, VGS@ 10V<br>~~nD~~<br>~~**e**e~~|64<br>45<br>210<br>~~so~~<br>~~GO~~|A<br>~~so~~|
|ID@ TC= 100°C<br>~~a~~~~**e**~~<br>~~s~~|Continuous Drain Current, VGS@ 10V<br>~~**e**e~~<br>~~©~~|||
|IDM<br>~~**e**~~<br>~~s~~<br>~~Rs~~|Pulsed Drain Current<br>~~**e**e~~<br>~~©~~<br>~~en~~|||
|PD@TA= 25°C<br>~~**e**~~<br>~~s~~<br>~~Rs~~<br>~~Rs~~|Power Dissipation<br>~~**e**e~~<br>~~©~~<br>~~en~~<br>~~en~~|3.8<br>~~so~~<br>~~GO~~<br>~~GO~~|W<br>~~so~~|
|PD@TC= 25°C<br>~~Rs~~<br>~~Rs~~<br>~~Rs~~|Power Dissipation<br>~~en~~<br>~~en~~<br>~~en~~|130<br>~~GO~~<br>~~GO~~<br>~~(~~|W|
|~~Rs~~<br>~~Rs~~<br>~~a~~|Linear DeratingFactor<br>~~en~~<br>~~en~~|0.83<br>W/°C<br>~~GO~~<br>~~(~~<br>~~G~~|W/°C|
|VGS<br>~~Rs~~<br>~~a~~<br>~~Rs~~|Gate-to-Source Voltage<br>~~en~~<br>~~©~~|± 20<br>~~(~~<br>~~G~~<br>~~GO~~|V|
|IAR<br>~~a~~<br>~~Rs~~<br>~~Rs~~<br>~~es~~|Avalanche Current<br>~~©~~<br>~~eK~~<br>~~©)~~|32<br>~~G~~<br>~~GO~~<br>~~eK~~<br>~~©)~~|A<br>~~eK~~|
|EAR<br>~~Rs~~<br>~~Rs~~<br>~~es~~|Repetitive Avalanche Energy<br>~~©~~<br>~~eK~~<br>~~©)~~|13<br>~~GO~~<br>~~eK~~<br>~~©)~~|mJ<br>~~eK~~|
|dv/dt<br>~~Rs~~<br>~~es~~|Peak Diode Recoverydv/dt<br>~~eK~~<br>~~©)~~<br>~~©~~|5.0<br>~~eK~~<br>~~©)~~|V/ns<br>~~eK~~|
|TJ<br>~~es~~<br>~~a~~|Operating Junction and<br>~~©)~~|-55  to + 175<br>300 (1.6mm from case )<br>~~©)~~|°C|
|J<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds|||



## IRFZ48NS/LPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|55<br>~~es~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ <br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|0.058<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|–––|14|mΩ|VGS= 10V, ID= 32A<br>~~®~~<br>~~®~~|
|VGS(th)<br>~~es~~<br>~~es~~<br>~~es~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|2.0<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~®~~|
|gfs<br>~~es~~<br>~~ee~~|Forward Transconductance<br>~~es~~<br>~~ee~~|24<br>~~es~~<br>~~eee~~|–––<br>~~eee~~|–––<br>~~eee~~|S<br>~~eee~~|VDS= 25V, ID= 32A<br>~~®~~|
|IDSS<br>~~es~~<br>~~ee~~<br>~~>~~|Drain-to-Source Leakage Current<br>~~es~~<br>~~ee~~<br>~~>~~|–––<br>~~es~~<br>~~eee~~|–––<br>~~eee~~|25<br>~~eee~~|µA<br>~~eee~~<br>~~>~~|VDS= 55V, VGS= 0V<br>~~®~~|
|||–––<br>~~eee~~<br>~~>~~|–––<br>~~eee~~<br>~~>~~|250<br>~~eee~~<br>~~>~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~>~~|
|IGSS<br>~~ee~~<br>~~>~~<br>~~ee~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~ee ~~<br>~~>~~<br>~~ee~~|–––<br> ~~eee~~<br>~~>~~<br>~~ee~~<br>~~ee~~|–––<br>~~eee~~<br>~~>~~<br>~~ee~~|100<br>~~eee~~<br>~~>~~<br>~~|~~|nA<br>~~eee~~<br>~~>~~<br>~~|~~|VGS= 20V<br>~~>~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee<br>|–––<br>~~ee~~<br>|-100<br>~~|~~<br>||VGS= -20V|
|Qg<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>~~ee~~<br>ee<br><br>ee|–––<br>~~ee~~<br>|81<br>~~ee~~<br>|nC|ID= 32A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs<br>~~a ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|–––<br>~~ee~~|19<br>~~ee~~|||
|Qgd<br>~~SS~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~SS~~<br>|–––<br>ee<br>~~SS~~<br>ee<br>|–––<br>~~SS~~<br>|30<br>~~SS~~<br>|||
|td(on)<br>~~SS~~<br>~~ee~~<br>~~ee~~|Turn-On Delay Time<br>~~SS~~<br>~~ee~~<br>|–––<br>~~SS~~<br>~~ee~~<br>ee<br>|12<br>~~SS~~<br>~~ee~~<br>|–––<br>~~SS~~<br>~~ee~~<br>|ns<br>~~ee~~|VDD= 28V<br>ID= 32A<br>RG= 0.85Ω<br>VGS= 10V, See Fig. 10|
|tr<br>~~eeee~~|Rise Time<br>~~ee~~|–––<br>ee<br>~~ee~~|78<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~<br>a|Turn-Off Delay Time<br><br>|–––<br>ee<br><br>|34<br><br>|–––<br><br>|||
|tf<br> ~~**e**~~|Fall Time<br>~~**e**e~~|–––<br>~~ee~~|50<br>~~ee~~|–––<br>~~ee~~|||
|LS<br> ~~**e**~~|Internal Source Inductance<br>~~**e**e~~|–––<br>~~ee~~|7.5<br>~~ee~~|–––<br>~~ee~~|nH<br>~~ee~~|Between lead,<br>and center of die contact|
|Ciss<br> ~~**e**~~|Input Capacitance<br>~~**e**e ~~<br>~~e~~|–––<br> ~~ee~~<br>~~e~~|1970<br>~~ee~~<br>~~e~~|–––<br>~~ee~~<br>~~e~~|pF<br>~~ee~~<br>~~e~~<br>~~ee~~<br>~~ee~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|470<br>~~ee~~|–––<br>~~ee~~|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~|120<br>~~ee~~|–––<br>~~ee~~|||
|EAS<br>a~~>~~|Single Pulse Avalanche Energy<br>~~>~~|–––<br>~~>~~|700<br>~~>)~~|190<br>~~)~~|mJ<br>~~)~~|IAS= 32A, L = 0.37mH<br>~~)~~|



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** IS Continuous Source Current ––– ––– 64 MOSFET symbol D ~~ee~~ (Body Diode) showing  the ISM Pulsed Source Current ––– ––– 210 integral reverse G ~~ee~~ (Body Diode) p-n junction diode. S ~~ee~~ VSD ~~SSS~~ Diode Forward Volta ~~ee~~ ge ––– ––– 1.3 V TJ = 25°C, IS = 32A, VGS = 0V ~~(a ne~~ trr Reverse Recovery Time ––– 68 100 ns TJ = 25°C, IF = 32A ~~@~~ Qrr Reverse Recovery Charge ––– 220 330 nC di/dt = 100A/µs ® ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ~~SSaes~~ 

O) Repetitive rating;  pulse width limited by @ Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) ©) This is the destructive value not limited to the thermal limit. @© Starting TJ = 25°C, L = 0.37mH This is the thermal limited value. 

RG = 25Ω, IAS = 32A. (See Figure 12) 

- @ ISD ≤ 32A , di/d t ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

www.irf.com 

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## IRFZ48NS/LPbF 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V i ee<br>5.0V<br>BOTTOM 4.5V<br> 100<br>gp<br> 10<br>4.5V<br>20µs PULSE WIDTH<br> 1 SPaliai a e T  = 25J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V 1<br>5.0V<br>BOTTOM 4.5V<br> 100<br>ey aSeer 4.5V mel<br> 10<br>20µs PULSE WIDTH<br> 1 SPLHIt T  = 175J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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 1000 2.5<br>ID = 64A<br>===> T TT<br>e T  = 25  CJ ° a 2.0 TTT Try<br>———- ety dep<br> 100 T  = 175  CJ °<br>a=e e! 1.5 FeetJ Y,<br>— A TTY<br>fy Pa<br>/ A 1.0 Py TT<br> 10 7A | | ct | Tt CTA<br>——— ———— tert ttt tt tt<br>0.5<br>eS e e Se<br>V      = 25VDS<br> 1 |f| | p | | 20µs PULSE WIDTH f 0.0 PETFT LTE ELETT EtT t pt EE VGS = 10V<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFZ48NS/LPbF 

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3500 20<br>VGS = 0V, f = 1MHz ID = 32A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS = 44V<br>3000 _—- Crss = Cgd PF, ft VDS = 27V j t<br>7 Coss = Cds + Cgd 16 | | tf VDS = 11V i<br>2500 PSonePT N Toot | | | | WsLy|<br>Ciss 12<br>2000<br>So Scott P| | | | Ty<br>1500 NXN ES ] Of 8 LA<br>NG ee yA<br>1000 aN ell A<br>Coss<br>PS 4 Pir? tt<br>500<br>PALL all TA | Of<br>Crss FOR TEST CIRCUIT<br>0 raPCr, SEES T 0 VY | | | | po SEE FIGURE       13<br> 1  10  100 0 20 40 60 80<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000<br> 1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>100<br> 100<br>T  = 175  CJ °<br>S SS 100µsec<br>10<br> 10<br>1msec<br>T  = 25  CJ ° 1<br> 1 f p bd e Tc = 25°C l 10msec<br>jf Tj = 175°C H t<br>a 0.1 Single Pulse tH<br>0.1 ffi f ee| {[|] V      = 0 V GS 1 ee 10 100<br>0.2 0.7 1.2 1.7 2.2 VDS  , Drain-toSource Voltage (V)<br>V     ,Source-to-Drain Voltage (V)SD<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFZ48NS/LPbF 

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70 TTT TTT TTT yy Vos Ro<br>60 Ne tT te<br>PANEER Ves out<br>50 Pt TAA TE TE TT TT Re<br>P| tT tT dT rNEE TT TT bp<br>40 Pt; TT TT RET TY<br>Pt tt tT tT UTNE TT )t Vos  1<br>30 Ft tT tT tT tT TTA TT Dutyractor ≤ 0.1 %<br>Ft tt tre tT rE TIN I 1<br>20 Pt tT tT TdT | dT dT | WNL<br>rt ttt ttt tt ty] Fig 10a. Switching Time Test Circuit<br>10 Ft tT tT td rT rT dT | dT A VDS<br>90%<br>Ft tt tt tT dE dT | ht TY J<br>0 PEt \<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>ET TT  ET 10% / \ Vv\<br>Fig 9.   Maximum Drain Current Vs. VGS l KS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 10<br>a a a ee se a ee ee ee ee<br>a<br>PT tT ETT TE TT TTT<br> 1 aeee<br>D = 0.50<br>e f<br>po eeeee<br>0.20<br>a ill LT]<br>0.10 PDM<br>0.1 — 0.05 DSSz t1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>aman a<br>Notes:<br>1. Duty factor D = t   / t1 2<br>ei oe 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFZ48NS/LPbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>7<br>20V<br>ia tp 0.01Ω<br>12a. Unclamped Inductive|  Test Circuita<br>—— tp — V(BR)DSS<br>/<br>/ y |\<br>IAS<br>12b. Unclamped Inductive Waveforms<br>QG<br>eo<br>QGS QGD<br>V | G 7<br>Charge<br>**----- End of picture text -----**<br>


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360<br>ID<br>300 RiA [tt] TOP 13A 23A<br>BOTTOM 32A<br>PALL<br>240 PINNE [NS] T [ee] T TT<br>180<br>BNENER EEE<br>SAKE<br>120 P AND AT [Tt]<br>ri) | NANX T  T L<br>60 ASN<br>pf ft US<br>PP<br>0 Sa<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Fig 12c. MaximumVs. DrainAvalancheCurrent  Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>BN - D.U.T. +-VDS<br>VGS<br>(st<br>3mA<br>Oe<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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## IRFZ48NS/LPbF 

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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@ •  Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Re •   dv/dt controlled by Rg +<br>•   Isp controlled by Duty Factor "D" -<br>•   D.U.T. - Device Under Test<br>* Reverse Polarity of D.U.T for P-Channel<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \ F<br>L,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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## IRFZ48NS/LPbF 

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Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  80 2 4 IN T E R N AT ION AL oY<br>AS S E M B L E D  ON  W W  0 2, 20 00 R E CT IF IE R F 5 30 S<br>IN  T H E  AS S E M B L Y  L IN E  "L " L OGO IER 002L<br>80 24 D AT E  COD E<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E MB L Y V J U 7 U1? U YE AR  0 =W E E K  02  20 00<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL —<br>R E CT IF IE R F 530S<br>L OGO IeaRPoo2A<br>80 24 D AT E  COD E<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y Ju<br>P R OD U CT  (OP T ION AL )<br>L OT  COD E V?U 7U YE AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y S IT E  COD E<br>**----- End of picture text -----**<br>


## www.irf.com 

8 

## IRFZ48NS/LPbF 

## TO-262 Package Outline 

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IGBT<br>1-  GAT — E<br>2- COLLECTOR<br>3- EMITTER<br>**----- End of picture text -----**<br>


## TO-262 Part Marking Information 

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EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO a TeaRIRL3103L719<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL —S<br>RECTIFIER IRL3103L<br>LOGO TORP 719A DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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9 

## IRFZ48NS/LPbF 

## D[2] Pak Tape & Reel Infomation 

Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>a 1.65 (.065) es 11.40 (.449) 15.42 (.609) i 24.30 (.957)<br>15.22 (.601) 23.90 (.941)<br>TRL<br>LIEN 1.75 (.069) T<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>, 12.80 (.504) 23.90 (.941) — 4 It<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| E<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418. 26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>oea 3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 3 it<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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- [View this product on Novapart](https://novapart.co/products/IRFZ48NSTRLPBF/power-mosfet-n-channel-55-v-64-a-0014-ohm-to-263ab)
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- [Supplier page](https://es.farnell.com/infineon/irfz48nstrlpbf/mosfet-n-ch-55v-64a-to-263ab/dp/2781147)
---

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