# Power MOSFET, N Channel, 55 V, 64 A, 0.014 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:1013497/)

**URL**: https://novapart.co/products/IRFZ48NPBF/power-mosfet-n-channel-55-v-64-a-0014-ohm-to-220ab
**SKU**: IRFZ48NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4960
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation P

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 130W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 64A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013497/)

PD - 94991B 

## IRFZ48NPbF 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 14m Ω<br>DS(on)<br>G<br>ID = 64A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

a **Parameter Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 64 -—ao?FoO7 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A Soe IDM Pulsed Drain Current 210 _ ~~a~~ PD @TC = 25°C Power Dissipation 130 W ~~a~~ Linear Derating Factor 0.83 W/°C ~~a~~ VGS Gate-to-Source Voltage ± 20 V ~~a~~ IAR Avalanche Current 32 A ~~©~~ EAR Repetitive Avalanche Energy 13 mJ ~~a~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C ~~a~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~pf eenD~~ Mounting torque, 6-32 or M3 srew ~~I~~ 10 lbf•in (1.1N•m) 

## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.15|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|||||
|---|---|---|---|---|---|---|
||**Parameter**<br>es|**Min.**<br>es<br>~~ee~~|**Typ. **<br>es|**Max. **<br>es|**Units**<br>es|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|55<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~®~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>~~es~~|0.058<br>~~es~~|–––<br>~~es~~|V/°C<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>|–––<br>~~es~~<br>~~es~~|–––<br>|14|mΩ|VGS= 10V, ID= 32A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>|2.0<br>~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~<br>|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~®~~|
|gfs|Forward Transconductance<br>~~——~~|24<br>~~es——~~|–––<br>~~——~~|–––|S|VDS= 25V, ID= 32A|
|IDSS|Drain-to-Source Leakage Current<br>~~——~~|–––<br>~~——~~|–––<br>~~——~~|25|µA|VDS= 55V, VGS= 0V|
|||–––|–––|250||VDS= 44V, VGS= 0V, TJ= 150°C|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|Qg|Total Gate Charge<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|81<br>~~ee~~|nC|ID= 32A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13|
|Qgs|Gate-to-Source Charge|–––|–––|19|||
|Qgd|Gate-to-Drain("Miller")Charge|–––|–––|30|||
|td(on)<br>ee|Turn-On Delay Time<br>~~es~~|–––<br>~~es~~|12<br>~~es~~|–––<br>~~es~~|ns|VDD= 28V<br>ID= 32A<br>RG= 0.85Ω<br>VGS= 10V, See Fig. 10<br>®|
|tr<br>ee<br>ee|Rise Time<br>~~es~~|–––<br>~~es~~|78<br>~~es~~|–––<br>~~es~~|||
|td(off)<br>ee<br>ee<br>~~ne~~|Turn-Off Delay Time<br>~~es~~<br>~~en~~|–––<br>~~es~~<br>~~nel~~|34<br>~~es~~<br>~~nel~~|–––<br>~~es~~<br>~~nel~~|||
|tf<br>ee<br>~~ne~~|Fall Time<br>~~en~~|–––<br>~~nel~~|50<br>~~nel~~|–––<br>~~nel~~|||
|LD<br>~~ne~~<br>~~pf~~|Internal Drain Inductance<br>~~en~~<br>~~ts~~<br>~~pf~~|–––<br>~~nel~~<br>~~ts~~|~~nel~~<br>~~ts~~|–––<br>~~nel~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>®<br>~~a~~|
|LS<br>~~ne~~<br>~~pf~~|Internal Source Inductance<br>~~en~~ <br>~~ts~~<br>~~pf~~|–––<br> ~~nel~~<br>~~ts~~|~~nel~~<br>~~ts~~|–––<br>~~nel~~|nH||
|Ciss<br>~~pf~~|Input Capacitance<br>~~pf~~<br>~~a~~|–––<br>~~a~~|1970<br>~~a~~|–––<br>~~a~~|pF<br>|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz, See Fig. 5<br>~~a~~<br>|
|Coss<br>~~pf~~<br>~~ee~~|Output Capacitance<br>~~pf~~<br>|–––<br>|470<br>|–––<br>|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance<br>|–––<br>|120<br><br>~~=)~~|–––<br><br>~~=)~~|||
|EAS<br>~~eeen~~|Single Pulse Avalanche Energy<br>~~en~~|–––<br>~~en~~|700<br>~~en~~<br>~~=)~~|190<br>~~en~~<br>~~=)~~|mJ<br>~~en~~|IAS= 32A, L = 0.37mH<br>~~en~~|



## **Source-Drain Ratings and Characteristics** 

o) Repetitive rating;  pulse width limited by @ ISD ≤ 32A t di/d ≤ 220A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C @ Starting TJ = 25°C, L = 0.37mH @ Pulse width ≤ 400µs; duty cycle ≤ 2%. RG = 25 Ω , IAS = 32A. (See Figure 12) © This is the destructive value not limited to the thermal limit. © This is the thermal limited value. 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V8.0V | 10V8.0V Cete<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V HEH 5.5V HCE<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100  100<br>ge ey Soma 4.5V el<br> 10  10<br>4.5V<br> 1 Paniaa i 20µs PULSE WIDTHT  = 25J l. °C  1 SeneH IT 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 1000 2.5<br>ID = 64A<br>SS SS T  = 25  CJ  S ° SS 2.0 4.SEREEEEEEESTTT TTT<br>S ES S tty<br> 100 T  = 175  CJ °<br>| | e re PEt TTT ET TAT<br>==eceee46 1.5 PLTPLT TETTET [TTT]  ALEWy<br>1.0<br>FH 7<br> 10<br>= SS SS SS eet<br>0.5<br>|S{| ft [|] SS V      = 25VDS Teed Pepe<br>20µs PULSE WIDTH VGS = 10V<br> 1 PP PP P | 0.0 PE PE<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3500 20<br>VGS = 0V, f = 1MHz ID = 32A<br>Ciss = Cgs + Cgd , C      SHORTEDds VDS = 44V<br>3000 Crss = Cgd VDS = 27V<br>T_T Coss = Cds + Cgd 16 VDS = 11V —<br>2500 PSone a oot | | [| Ly|<br>2000 Si Ciss | 12 ae Z<br>IN<br>1500<br>8<br>oa = EEA<br>Ne nn Aaa<br>1000 ee SC |<br>Coss<br>4<br>500 aST e eeeWY<br>ra Crss SEC 4 FOR TEST CIRCUIT<br>0 Ph, SE S ET 0 VY | | ft ae SEE FIGURE       13<br> 1  10  100 0 20 40 60 80<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000<br>1000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br> 100<br>T  = 175  CJ ° 100<br> 10 100µsec<br>10<br>== SS SS Pl<br>T  = 25  CJ ° 1msec<br> 1<br>1<br>10msec<br>Tc = 25°C<br>Tj = 175°C<br>Se V      = 0 V GS Se Single Pulse<br>0.1 0.1<br>0.2 0.7 1.2 1.7 2.2<br>1 10 100<br>V     ,Source-to-Drain Voltage (V)SD<br>VDS  , Drain-toSource Voltage (V)<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I     , Reverse Drain Current (A)SD<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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70<br>TTL Vos Re<br>60 Ne tT te<br>nN Ves sur<br>50 PT TAKA aL TE Re —_<br>-<br>Pt tT te TREE TTT I Voo<br>40 PTPT tTtT eTtT eTTINTE UIQETETTT )i Ves ≤ 1<br>30 Pte tT eT TT TE TN ET Duty ≤ 0.1 %<br>Pt tT tte tT Tr TUTUIN I Factor 1<br>ee<br>20 rt . oe -_<br>10 Pt t T tt ttteT TT TE TTtt TNty] VDS Fig 10a. Switching Time Test Circuit<br>90%<br>eee J \<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>PE; ET TE TE TT TT 10% / \ i<br>Fig 9.   Maximum Drain Current Vs. VGS<br>Case Temperature td(on) tr td(off) tf<br>Fig 10b. Switching Time Waveforms<br> 10<br>a eee<br>PTE [ET] TTeee eee eee<br> 1 |<br>D = 0.50<br>g w<br>rrr ee eee ee ee<br>a a<br>0.20<br>e er ee ee eee<br>0.10 SS PDM<br>0.1 0.05 t1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>ao | aee ee Notes:<br>1. Duty factor D = t   / t1 2<br>rr 2. Peak T J = P DM x  Z thJC + TC<br>0.01 ie<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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360<br>15V ID<br>300 RiA [tt] TOP 13A 23A<br>BOTTOM 32A<br>VDS L DRIVER PALL<br>240 PINT T<br>RG D.U.T + NE [NS][ee] TT<br>- [V][DD]<br>IAS A 180<br>7 BNENER EEE<br>20V<br>ia tp 0.01 Ω SAKE<br>3 a 120 Pp IANA TT<br>12a. Unclamped Inductive Test Circuit ri) | NANXK T TL<br>V(BR)DSS 60 ASN<br>tp PPSa<br>—_— 0 pf ft US<br>25 50 75 100 125 150 175<br>/ Starting T  , Junction TemperatureJ (  C)°<br>/ y |\ Fig 12c. MaximumVs. Drain AvalaCurre n tche Energy<br>IAS<br>12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T. !<br>50K Ω<br>12V .2 µ F !<br>oT  * QG .3 µ F |<br>+<br>BO | D.U.T. -VDS<br>A QGS QGD<br>VGS<br>VG 3mA<br>= & |<br>Ont.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•   -<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recoverydv/dt \<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


For N-channel HEXFET[®] power MOSFETs 

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EXAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789 INTERNAT IONAL PART  NUMBER<br>AS S EMBLED ON WW 19, 2000IN THE AS S EMBLY LINE "C" RECTIFIERLOGO TORIRF1010019¢<br>17 89 DATE CODE<br>Note: "P" in as sembly line pos ition AS S EMBLY YEAR 0 =  2000<br>indicates  "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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