# Power MOSFET, N Channel, 55 V, 53 A, 0.0165 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2781146/)

**URL**: https://novapart.co/products/IRFZ46NSTRLPBF/power-mosfet-n-channel-55-v-53-a-00165-ohm-to
**SKU**: IRFZ46NSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.1000
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 107W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 53A |
| Drain Source On State Resistance | 0.0165ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781146/)

## PD - 95158 IRFZ46NSPbF IRFZ46NLPbF 

Advanced Process Technology Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[2] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for lowprofile applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 0.0165 Ω<br>DS(on)<br>G<br>ID = 53A<br>S<br>**----- End of picture text -----**<br>


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   D   Pak2  T O -262<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|~~a~~<br>~~—~~|**Parameter**<br>~~——<—_—————~~|**Max.**<br>**Units**<br>~~——<—_—————~~|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~a~~<br><br>~~—~~|Continuous Drain Current, VGS@ 10V<br>~~i~~<br>~~——<—_—————~~|53<br>37<br>180<br>~~i~~<br>~~——<—_—————~~|A|
|ID@ TC= 100°C<br>~~—~~<br>~~es—~~|Continuous Drain Current, VGS@ 10V<br><br>~~——<—_—————~~|||
|IDM<br>a<br>~~es—~~|Pulsed Drain Current<br>~~——<—_—————~~|||
|PD@TA= 25°C<br>~~es—~~<br>|Power Dissipation<br>~~——<—_—————~~<br>~~ee~~|3.8<br>~~——<—_—————~~<br>~~ee~~|W<br>~~ee~~|
|PD@TC= 25°C<br>~~es—~~<br>|Power Dissipation<br>~~——<—_—————~~<br>~~ee~~|107<br>~~——<—_—————~~<br>~~ee~~|W<br>~~ee~~|
|~~—~~<br>~~SS~~|Linear DeratingFactor<br><br>~~SS~~|0.71<br>W/°C<br><br>~~SS~~|W/°C<br><br>~~SS~~|
|VGS<br>~~SS~~<br>~~SS~~|Gate-to-Source Voltage<br>~~SS~~<br>~~SS~~|± 20<br>~~SS~~<br>~~SS~~|V<br>~~SS~~<br>~~SS~~|
|IAR<br>~~SS~~<br>~~SS~~|Avalanche Current<br>~~SS~~<br>~~SS~~|28<br>~~SS~~<br>~~SS~~|A<br>~~SS~~<br>~~SS~~|
|EAR<br>~~SS~~<br>~~a~~|Repetitive Avalanche Energy<br>~~SS~~<br>~~a~~|11<br>~~SS~~<br>~~a~~|mJ<br>~~SS~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>V/ns<br>~~a~~|V/ns|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175<br>300 (1.6mm from case )|°C|
||Soldering Temperature, for 10 seconds|||



## **Thermal Resistance** 

## IRFZ46NS/LPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~ee~~|~~es~~||||
|---|---|---|---|---|---|---|
|ee|**Parameter**<br>ee|**Min. **<br>ee<br>~~ee~~|**Typ. **<br>ee<br>~~es~~|**Max. **<br>ee|**Units**<br>ee|**Conditions**|
|V(BR)DSS<br>~~es~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|55<br>~~ee ~~<br>~~es~~<br>~~ee~~|–––<br> ~~es~~<br>~~es~~|–––<br>~~es~~|V<br>~~es~~|VGS= 0V, ID= 250µA<br>~~©~~|
|∆V(BR)DSS/∆TJ <br>~~es~~<br>~~es~~|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~es~~|–––<br>~~ee~~|0.057|–––|V/°C|Reference to 25°C, ID=1mA<br>~~©~~<br>~~@~~|
|RDS(on)<br>~~es~~<br>~~es~~<br>~~es~~|Static Drain-to-Source On-Resistance<br>~~es ~~<br>~~es~~<br>~~es~~|–––<br> ~~ee~~<br>~~ee~~|–––|.0165|Ω|VGS=10V, ID= 28A<br>~~©~~<br>~~@~~<br>~~0~~|
|VGS(th)<br>~~es~~<br>~~es~~<br>~~es~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~<br>~~es~~|2.0<br>~~es~~<br>~~ee~~|–––<br>~~es~~|4.0<br>~~es~~|V<br>~~es~~|VDS= VGS, ID= 250µA<br>~~@~~<br>~~0~~|
|gfs<br>~~es~~|Forward Transconductance<br>~~es~~|19<br>~~ee~~|–––|–––|S|VDS= 25V, ID= 28A<br>~~0~~|
|IDSS<br>~~es~~<br>~~or~~<br>~~ee~~|Drain-to-Source Leakage Current<br>~~es~~<br>~~or~~<br>~~——~~<br>~~ee~~|–––<br>~~ee~~<br>~~or~~|–––<br>~~or~~|25<br>~~or~~|µA<br>~~or~~<br>~~——————~~<br>~~_~~|VDS= 55V, VGS= 0V<br>~~0~~|
|||–––<br>~~or~~<br>~~——~~|–––<br>~~or~~<br>~~——~~|250<br>~~or~~<br>~~——~~<br>~~_~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~————~~|
|IGSS<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~——~~<br>~~ee~~|–––<br>~~——~~|–––<br>~~——~~|100<br>~~——~~<br>~~_~~|nA<br>~~——————~~<br>~~_~~|VGS= 20V<br>~~————~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>fT|–––<br>fT|–––<br>fT|-100<br>~~_~~<br>fT||VGS= -20V|
|Qg<br>~~ee~~<br>~~a~~<br>es|Total Gate Charge<br>~~ee~~<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|72<br>~~_~~<br>~~a~~|nC<br>~~_~~|ID= 28A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13<br>~~“~~|
|Qgs<br>~~a~~<br>es<br>~~ee~~|Gate-to-Source Charge<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|11<br>~~a~~|||
|Qgd<br>~~a~~<br>es<br>~~ee~~<br>~~ee~~|Gate-to-Drain("Miller")Charge<br>~~a~~<br>|–––<br>~~a~~<br>ee<br>|–––<br>~~a~~<br>|26<br>~~a~~<br>|||
|td(on)<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>es|Turn-On Delay Time<br>~~ee~~<br>|–––<br>~~ee~~<br>ee<br><br>ee|14<br>~~ee~~<br><br>ee|–––<br>~~ee~~<br>|ns|VDD= 28V<br>ID= 28A<br>RG= 12Ω<br>RD= 0.98Ω,See Fig. 10<br>~~“~~<br>~|
|tr<br>~~ee~~<br>~~eeee~~<br>es|Rise Time<br>~~ee~~|–––<br>ee<br>~~ee~~<br>ee|76<br>~~ee~~<br>ee|–––<br>~~ee~~|||
|td(off)<br>~~ee~~<br>es<br>~~es~~|Turn-Off Delay Time<br>|–––<br>ee<br><br>ee|52<br><br>ee|–––<br>|||
|tf<br>es<br>~~es~~|Fall Time|–––<br>ee|57<br>ee|–––|||
|LS<br>~~es~~<br>ee~~ee~~<br>a|Internal Source Inductance<br>~~ee~~<br>|–––<br>~~ee~~<br>ee|7.5<br>~~ee~~<br>ee|–––<br>~~ee~~|nH|Between lead,<br>and center of die contact<br>~|
|Ciss<br>~~es~~<br>ee~~ee~~<br>a|Input Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>ee<br>~~eee~~|1696<br>~~ee~~<br>ee<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|pF<br>~~>)~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,See Fig. 5<br>~<br>~~;~~|
|Coss<br>Crss<br>ee~~ee~~<br>a|Output Capacitance<br>Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|–––<br>–––<br>~~ee~~<br>ee<br>~~eee~~<br>rd|407<br>110<br>~~ee~~<br>ee<br>~~eee~~<br>~~>)~~|–––<br>–––<br>~~ee~~<br>~~eee~~<br>~~>)~~|||
|EAS<br> <br>~~rs~~|Single Pulse Avalanche Energy<br> ~~ee~~<br>~~rs~~|–––<br>~~eee~~<br>~~rs~~<br>rd|583<br>~~eee~~<br>~~rs~~<br>~~>)~~|152<br>~~eee~~<br>~~rs~~<br>~~>)~~|~~rs~~<br>~~>)~~|IAS= 28A, L = 389mH<br>~~;~~<br>~~rs~~|



- ©@ Repetitive rating;  pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) © Uses IRFZ46N data and test conditions. © Starting TJ = 25°C, L = 389µH © This is a typical value at device destruction and represents RG = 25 Ω , IAS = 28A. (See Figure 12) operation outside rated limits. 

© Uses IRFZ46N data and test conditions. © This is a typical value at device destruction and represents operation outside rated limits. 

   - This is a calculated value limited to TJ = 175°C. 

- ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, 

- TJ ≤ 175°C. 

   - Calculated continuous current based on maximum allowable 

   - junction temperature. Package limitation current is 39A. 

- ** When mounted on 1" square PCB (FR-4 or G-10 Material ). 

- For recommended footprint and soldering techniques refer to application note #AN-994. 

www.irf.com 

2 

## IRFZ46NS/LPbF 

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1000                    VGS<br> TO P           15V<br>                   10V ee<br>                   8.0V a<br>                   7.0V                   6.0V A | |<br>                   5.5V<br>                   5.0V<br> BO TTOM    4.5V OE | |<br>100 Pl aA<br>ee) ee<br>aey 7RleS... __—_ ee<br>fy<br>10 > Y Aneomff, el<br>ye<br> 4.5V<br>YoULaap 2.68 ee|OO0<br> 20µs P ULSE W IDTH<br>T CJ =  22 5°C<br>1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)D S<br>I   , D rain-to-S ource C urrent (A )D<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

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1000<br>ee ee eee eee eee eee<br>ss<br>ae ee ee ee ee ee<br>100 Pt T  = 25°CJ Le<br>ee = ee ee =<br>—— T  = 175°CJ<br>a a<br>a ao |<br>a<br>Ae<br>10 D/GR2 EERE EERE<br>aD ee ee ee ee eee eee<br>ye ee<br> V     = 25VDS<br>1  20µs PULSE W IDTH<br>4 5 6 7 8 9 10<br>V     , Gate-to-Source Voltage (V)G S<br>D<br>I   , Drain-to-Source C urrent (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>                   VGS<br> TOP           15V<br>                   10V eee<br>                   8.0V ee<br>                   7.0V                   6.0V A|<br>                   5.5V<br>                   5.0V<br> BOTTOM   4.5V oe ee See<br>100 Pt| ee ||<br>ae ee 77<br>Eageee LAee<br>ag | |<br>4.5V<br>10 | go ey<br>SS Aa eee eee<br>|wDYA — $AM|nntlllee eee| eee eel<br> 20µs P ULSE W IDTH<br> T   TCJ = 175°C<br>1<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


## **Fig 2.** Typical Output Characteristics 

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2.5<br> I    = 46AD<br>2.0<br>+<br>EEL EA<br>1.5 PEELE LLL pea p24<br>HA<br>ee<br>pa<br>1.0 PELE ee<br>Ter |<br>a<br>0.5<br> V       = 10V G S<br>0.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Tem perature (°C)J<br>(Norm alized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance Vs. Temperature 

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3 

## IRFZ46NS/LPbF 

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2800<br>V       = 0V ,         f = 1M HzG S<br>C      = C     + C     ,   C     SHORTE Diss         gs         gd         ds<br>2400 C      = Crss         gd<br>J C      = C     + Coss        ds         gd<br>2000 C iss<br>So ot<br>eT a aT<br>1600<br>a<br>C  oss<br>1200 PSTeeSot<br>a el<br>800 PASTE<br>C  rss<br>SOS<br>400<br>a SST<br>0 ela |<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>Fig 5.   Typical Capacitance Vs.<br>          Drain-to-Source Voltage<br>1000<br>pf fe fb<br>100 | | | hu Lee<br>T  = 175°CJ<br>4 {| T  = 25°CJ<br>10<br>72) ee<br>ee<br>ee ee a<br>1 eeA |e i i V      = 0V G S A<br>0.4 0.8 1.2 1.6 2.0 2.4<br>V     , Source-to-Drain Voltage (V)S D<br>C, Capacitance (pF)<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>I    = 28AD<br> V      = 44VD S<br> V      = 28V D S<br>16 Pf San<br>P| { ) |) dl yl Ne<br>12 Seer<br>A<br>SERRA<br>8 Pty TTT mT TAA<br>| | fA<br>4<br>|  vA<br>7TTT<br> FOR TE ST CIRCUIT<br>0 7AneATTTT     S EE FIGURE 13<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>          Gate-to-Source Voltage<br>1000<br> OPE RATION IN THIS AREA LIM ITE D<br>                       BY R DS(on)<br>= eetiit Hi e<br>Z|<br>100 eee Sl 10µs<br>100µs<br>10<br>S S 1m s<br>—— ee eee eee eet<br>eee ee eee<br> T     = 25°CC 10m s<br> T     = 175°CJ<br>p  S ingle Pulse e el<br>1<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>G S<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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4 

## IRFZ46NS/LPbF 

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RD<br>VDS<br>VGS<br>D.U.T.<br>RG<br>+<br>V-DD<br>10V :<br>Pulse Width  ≤ 1  µs<br>Duty Factor  ≤ 0.1 %<br>Fig 10a.   Switching Time Test Circuit<br>|<br>VDS<br>90%<br>x |<br>|<br>10% /\ |<br>VGS<br>| 7 A :<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current Vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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 10<br>a a a a ee<br>eee eee<br>pot eee<br>a<br>aee<br>ee<br> 1 a<br>eee<br>p D = 0.50 e<br>p ee ee eeeoee eeeeee epeeeee ee eee eee<br>0.20<br>p ee<br>0.10 SB} ETA PDM<br>0.1 0.05<br>a gen ll t1<br>0.020.01 a (THERMAL RESPONSE)SINGLE PULSE t 2<br>Ser—_ ames 80 BOe OO 0te<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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5 

## IRFZ46NS/LPbF 

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L<br>VDS a<br>D.U.T.<br>RG +<br>- VDD<br>“WW<br>10 V IAS<br>a tp 0.01 Ω<br>ow<br>°<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>t<br>— p —<br>/ VDD<br>/<br>VDS<br>fo yp |i be<br>yy<br>IAS<br>**----- End of picture text -----**<br>


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500<br>                    I D<br>NEG TOP            11A<br>400 KOR eee                    20ABO TTO M     28A<br>300 PN GaNe EEEeee<br>SIX<br>200<br>NN<br>PNINA<br>100 PENNANT<br>SERED S SNE<br> V      = 25V eee DD<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Tem perature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>—<br>10 V<br>QGS QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>4 :<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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6 

## IRFZ46NS/LPbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •   Low Stray Inductance<br> •   Ground Plane<br> •   Low Leakage Inductance<br>(aa)       Current Transformer<br>| | -<br>+<br>- - +<br>he.<br>00<br>RG •   dv/dt controlled by RG +<br>( ns •   Driver same type as D.U.T. - V DD<br>•   ISD controlled by Duty Factor "D"<br>•   D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>————, P.W. —— — Period -<br>VGS=10V *<br>ai [\]<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

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7 

## IRFZ46NS/LPbF D[2] Pak Package Outline 

## D[2] Pak Part Marking Information (Lead-Free) 

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T HIS  IS  AN IR F 530S  WIT H PAR T  NU MB E R<br>L OT  CODE  8024 INT E R NAT IONAL |<br>AS S E MB L E D ON WW 02, 2000 R E CT IF IE R F 530S<br>IN T H E  AS S E MB L Y L INE  "L " L OGO TeaR 002.<br>pos ition indicates  "L ead-F ree"Note: "P " in as s embly line AS S E MB L YL OT  CODE 80 Ju 7,U b?fi24 DAT E  CODEYE AR  0 =WE E K  02L INE  L  2000<br>**----- End of picture text -----**<br>


## OR 

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PAR T  NU MB E R<br>INT E R NAT IONAL cS<br>R E CT IF IE R F 530S<br>L OGO TeaR80 P002A24 DAT E  CODE<br>P =  DE S IGNAT E S  L E AD-F R E E<br>AS S E MBL YL OT  CODE L OGLi JUU ul YE AR  0 =PR ODU CT  (OPT IONAL ) 2000<br>WE E K  02<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


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www.irf.com<br>**----- End of picture text -----**<br>


8 

## IRFZ46NS/LPbF 

## TO-262 Package Outline 

## Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [326 x 166] intentionally omitted <==**

**----- Start of picture text -----**<br>
E XAMPLE : T H IS  IS  AN IRL 3103L<br>LOT  CODE  1789 PAR T  NU MB E R<br>AS S E MB LE D ON WW 19, 1997 INT E R NAT IONAL SY<br>IN T HE  AS S E MB L Y LINE  "C" R E CT IF IE RLOGO TeaRIRL3103L719C<br>Note: "P" in as s embly line 17 89 DAT E  CODE<br>pos ition indicates  "Lead-F ree" AS S E MB LY YE AR 7 =  1997<br>LOT  CODE WE E K  19<br>LINE  C<br>OR<br>PAR T  NU MB E R<br>INT E R NAT IONAL cS<br>R E CT IF IE R IRL3103L<br>LOGO TEAR P719A<br>DAT E  CODE<br>17 89<br>P =  DE S IGNAT E S  LE AD-F RE E<br>AS S E MB LY PR ODU CT  (OPT IONAL)<br>LOT  CODE YE AR 7 =  1997<br>WE E K  19<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


www.irf.com 

9 

## IRFZ46NS/LPbF 

## D[2] Pak Tape & Reel Information 

**==> picture [15 x 6] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR R<br>**----- End of picture text -----**<br>


**==> picture [359 x 331] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 .6 0  (.0 6 3 )<br>1 .5 0  (.0 5 9 )<br>1 .60  (.06 3)<br>4 .10  (.1 6 1)3 .90  (.1 5 3) 1 .50  (.05 9) 0.3 68 (.01 45 )<br>0.3 42 (.01 35 )<br>F E ED  D IRE C TION 2 NN 1 .8 5  (.0 7 3 ) Least 1 1.60  (.45 7 ) rE f<br>1 .6 5  (.0 6 5 ) 1 1.40  (.44 9 ) 24 .3 0  (.95 7)<br>1 5.42  (.60 9 )<br>23 .9 0  (.94 1)<br>1 5.22  (.60 1 )<br>TR L kn<br>OoOO0°0 [| )<br>10.9 0 (.4 2 9) - | 1 .7 5 (.0 69 )1 .2 5 (.0 49 )<br>10.7 0 (.4 2 1) 4 .7 2 (.1 3 6)<br>1 6.10  (.63 4 ) 4 .5 2 (.1 7 8)<br>1 5.90  (.62 6 )<br>FE ED  D IR EC T ION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) 4<br>_ 4<br>33 0.00 60.00 (2.362)<br>(14.1 73)       M IN .<br>  M AX.<br>| OO |<br>NO T ES : TT | iL 30.40 (1.197)      M AX.<br>1.   CO M F O R M S T O  EIA-418.2.   CO NT R O LLIN G  DIM EN SIO N : M ILLIM ET ER . 24.40 (.961)26.40 (1.039) TE 4<br>3.   DIM ENSIO N  M EASUR ED  @  HU B.<br>3<br>**----- End of picture text -----**<br>


4.   INC LU DES FLAN G E DIST O R T IO N @  O U T ER  ED G E. 

Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 4/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFZ46NSTRLPBF/power-mosfet-n-channel-55-v-53-a-00165-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfz46nstrlpbf/mosfet-n-ch-55v-53a-to-263ab/dp/2781146)
---

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