# Power MOSFET, N Channel, 60 V, 57 A, 0.012 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:3155152/)

**URL**: https://novapart.co/products/IRFZ44VZPBF/power-mosfet-n-channel-60-v-57-a-0012-ohm-to-220ab
**SKU**: IRFZ44VZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6860
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 92W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 57A |
| Drain Source On State Resistance | 0.012ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155152/)

## PD - 95947A 

## IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 60V<br>R  = 12m Ω<br>DS(on)<br>G<br>ID = 57A<br>S<br>**----- End of picture text -----**<br>


TO-220AB D[2] Pak TO-262 IRFZ44VZPbF IRFZ44VZSPbF IRFZ44VZLPbF 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~a~~|57<br>~~a~~|A|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|40<br>~~a~~||
|IDM<br>~~Le~~|Pulsed Drain Current<br>~~Le~~|230||
|PD@TC= 25°C<br>~~Le~~<br>~~Le~~|Power Dissipation<br>~~Le~~<br>~~Le~~|92|W|
|~~Le~~<br>~~Le~~<br>~~Le~~|Linear Derating Factor<br>~~Le~~<br>~~Le~~<br>~~Le~~|0.61<br>|W/°C|
|VGS<br>~~Le~~<br>~~Le~~|Gate-to-Source Voltage<br>~~Le~~<br>~~Le~~|± 20<br>|V|
|EAS (Thermally limited)<br>~~Le~~|Single Pulse Avalanche Energy<br>~~Lea~~<br>~~i~~|73<br>~~a~~<br>~~i~~|mJ<br>~~i~~|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value<br>~~i~~|110<br>~~i~~||
|IAR|Avalanche Current<br>~~i~~<br>~~a~~|See Fig.12a, 12b, 15, 16<br>~~i~~<br>~~a~~|A<br>~~i~~<br>~~a~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~po~~||mJ|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175|°C|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case )||
|~~po~~|Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~LS~~|10 lbf in (1.1N m)<br>~~LS~~|~~LS~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~GO~~|60<br>~~GO~~<br>~~Gs~~|–––<br>~~GO~~<br>~~es~~|–––|V<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~QO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~GO~~<br>~~re~~|–––<br>~~GO~~<br>~~re~~<br>~~Gs~~|0.061<br>~~GO~~<br>~~re~~<br>~~es~~|–––<br>~~re~~|V/°C<br>~~QO~~<br>~~re~~|Reference to 25°C, ID= 1mA<br>~~QO~~<br>~~re~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~Pe~~|–––<br>~~Gs ~~<br>~~Pe~~<br>~~Gn~~|9.6<br> ~~es~~<br>~~Pe~~<br>~~Gn~~|12<br>~~Pe~~<br>|mΩ<br>~~Pe~~<br>~~QO~~|VGS= 10V, ID= 34A<br>~~Pe~~<br>~~QO~~|
|VGS(th)|Gate Threshold Voltage<br>~~Pe~~<br>~~Rs~~|2.0<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~Gs~~|–––<br>~~Pe~~<br>~~Rs~~<br>~~Gn~~<br>~~es~~|4.0<br>~~Pe~~<br>~~Rs~~<br>|V<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|VDS= VGS, ID= 250µA<br>~~Pe~~<br>~~Rs~~<br>~~QO~~|
|gfs|Forward Transconductance<br>~~Rs~~<br>~~re~~|25<br>~~Rs~~<br>~~Gn~~<br>~~re~~<br>~~Gs~~<br>~~renee~~|–––<br>~~Rs~~<br>~~Gn ~~<br>~~re~~<br>~~es~~<br>~~renee~~|–––<br>~~Rs~~<br> <br>~~re~~<br>~~eee~~|V<br>~~Rs~~<br> ~~QO~~<br>~~re~~<br>~~eee~~|VDS= 25V, ID= 34A<br>~~Rs~~<br>~~QO~~<br>~~re~~<br>~~ee~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~Gs ~~<br>~~ee~~<br>~~renee~~|–––<br> ~~es~~<br>~~ee~~<br>~~renee~~|20<br>~~ee~~<br>~~eee~~|µA<br>~~ee~~<br>~~eee~~|VDS= 60V, VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~renee~~|–––<br>~~ee~~<br>~~renee~~|250<br>~~ee~~<br>~~eee~~||VDS= 60V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee~~<br>~~a~~<br>~~|~~|–––<br>~~ee~~<br>~~renee ~~<br>~~a~~<br>|200<br>~~ee~~<br> ~~eee~~<br>~~a~~<br>|nA<br>~~ee~~<br>~~eee~~<br>~~a~~|VGS= 20V<br>~~ee~~<br>~~ee~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|TT~~<br>~~ee~~|–––<br>~~a~~<br>~~TT~~<br>~~ee~~|-200<br>~~a~~<br>~~TT~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~|~~<br>~~es~~<br>~~ee~~|–––<br>~~a~~<br>~~|TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|43<br>~~a~~<br>~~TT~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|65<br>~~a~~<br>~~TT~~<br>~~es~~|nC<br>~~a~~|VGS= 10V<br>ID= 34A<br>VDS= 48V<br>~~a~~<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|11<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|18<br>~~ee~~<br>~~ee~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee ~~<br>~~es~~|–––<br>~~ee~~<br> ~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|14<br>~~ee~~<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|ns<br>~~|~~|VDD= 30V<br>ID= 34A<br>RG= 12Ω<br>VGS= 10V<br>~~@~~<br>ee|
|tr|Rise Time<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|62<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~|35<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~a~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~<br>~~———+-H~~|–––<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~———+-H~~|38<br>~~ee~~<br>~~es~~<br>~~a~~<br>~~———+-H~~|–––<br>~~es~~<br>~~———+-H~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~———+-H~~|–––<br>~~es~~<br>~~a~~<br>~~———+-H~~|4.5<br>~~es~~<br>~~a~~<br>~~———+-H~~|–––<br>~~es~~<br>~~———+-H~~|nH<br>~~|~~|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>ee|
|LS|Internal Source Inductance<br>~~es~~<br>~~———+-H~~|–––<br>~~es~~<br>~~a~~<br>~~———+-H~~<br>~~ee~~|7.5<br>~~es~~<br>~~a~~<br>~~———+-H~~<br>~~ee~~|–––<br>~~es~~<br>~~———+-H~~|||
|Ciss|Input Capacitance<br>~~———+-H~~<br>~~es~~|–––<br>~~———+-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|1690<br>~~———+-H~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~———+-H~~<br>~~es~~|pF<br>~~|~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|270<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|130<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|1870<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~Ge~~|260<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~Ge~~|–––<br>~~es~~||VGS= 0V,  VDS= 48V,ƒ= 1.0MHz<br>~~®~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~Ge~~|510<br>~~ee~~<br>~~Ge~~|–––||VGS= 0V, VDS= 0V to 48V<br>~~®~~|



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V Srila 6.0V casi) ie<br>100 5.5V5.0V 100 5.5V5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>10 10 4.5V<br>O reo » A l l<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>4.5V Tj = 25°C Tj = 175°C<br>1 pea Se ll| 1 PEEHH yf |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>60<br>1000<br>T = 175°C<br>e s aa J<br>50<br>100 | | | pe 40 vane<br>a e Z| ||<br>TJ = 175°C TJ = 25°C<br>10 Eei 4 —— 2a74ee eeeesee eeee oooeeeee 3020 O/ A A<br>TJ = 25°C<br>= VDS  — = 25V — 10 | VDS = 15V tl<br>60µs PULSE WIDTH<br>380µs PULSE WIDTH<br>1 PT Y ||<br>0<br>4.0 Af 5.0 6.0 7.0 i} 8.0 9.0 ¥<br>0 10 20 30 40 50 60<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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3000 20<br>VGS   = 0V,       f = 1 MHZ ID= 34A<br>2500 J CCiss rss    = C = Cgs gd + Cgd,  C ds SHORTED 16 TFT VVDS= 30VDS= 48V TT<br>_ Coss  = Cds + Cgd _ je VDS= 12V s<br>2000<br>err Ciss r 12 Sy<br>1500<br>Cte |] GF<br>8<br>1000 a ll 7A<br>4<br>500 Coss FOR TEST CIRCUIT<br>SEE FIGURE 13<br>Crss<br>P oeH e aH 0 A+<br>0 |] fo<br>0 10 20 30 40 50 60<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>TJ = 175°C<br>10.0 10 100µsec<br>1.0 TJ = 25°C 1 1msec<br>Tc = 25°C<br>10msec<br>VGS = 0V Tj = 175°C<br>Single Pulse<br>0.1 0.1<br>0.2 0.6 1.0 1.4 1.8 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 2.5<br>ID = 34A<br>50 VGS = 10V<br>P SE 2.0 pe<br>P ART Snnnuyan<br>40<br>a a e<br>30 1.5<br>F PN EEE<br>PE LLLENG EEE<br>20<br>1.0<br>C IM pete<br>10<br>Y ER<br>0 0.5<br>a eeeee<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.10 =e<br>0.1 0.05 R1 R1 R2 R2 Ri (°C/W)     τ i (sec)<br>0.02 τ J τ J τ C τ 0.960       0.00044<br>0.01 τ 1 τ 1 τ 2 τ 2 0.680       0.00585<br>e e T T -— I<br>0.01 Ci=  τ i / Ri<br>Ci i / Ri<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>an ee ee en 2. Peak Tj = P dm x Zthjc + Tc l<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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300<br>                 I<br>D<br>TOP         3.8A<br>250<br>               5.0A<br>BOTTOM   34A<br>200 KN ne e<br>150<br>A EE<br>100<br>R EECE<br>50<br>S SS<br>S PSSEE<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>f<br>20VVGS<br>tp 0.01 Ω<br>m eh<br>**----- End of picture text -----**<br>


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Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>|<br>IAS w al<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>10V [2]<br>QGS QGD<br>VGG Charge -<br>**----- End of picture text -----**<br>


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4.0<br>VGG<br>P AE.<br>ID = 250µA<br>3.0<br>Charge - PPE<br>Fig 13a.   Basic Gate Charge Waveform P TL<br>LE INE<br>TTT<br>2.0<br>L y y EENN |<br>VCC<br>DUT<br>0 1.0<br>J. ~ LETTE EEE<br>1K -75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

**Fig 14.** Threshold Voltage Vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>CS Oe 0OO 0OO 8<br>100 SSS Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>10 case should Tj be allowed to<br>0.05 exceed Tjmax<br>0.10<br>1<br>|<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>80 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 34A   Purely a thermal phenomenon and failure occurs at a<br>60     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>N L 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>40 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>E SAT     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>20     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>H U 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>L TTE     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

   - **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO TOR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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THIS IS AN IRF530S WITH PART NUMBER<br>LOT CODE 8024 INTERNATIONAL cS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO IER 002.<br>80 24 DATE CODE<br>YEAR 0 =  2000<br>assembly"Lead line—. Free”positioni ASSEMBLYLOT CODE Hi UH WEEK 02LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER F530S<br>LOGO TeaR P0024) DATE CODE<br>80 24 P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY WU<br>LOT CODE beU +fU YEAR 0 =  2000WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [220 x 84] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO TOR CYS 1789IRL3103L719¢ DATE CODE<br>Note: “P”indicatesin assembly“Lead line- Free”position ASSEMBLYLOT CODE YEAR 7 =  1997WEEK 19<br>LINE C<br>OR<br>**----- End of picture text -----**<br>


**==> picture [147 x 60] intentionally omitted <==**

**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL |<br>RECTIFIER IRL3103L<br>LOGO IGR1789P7198. DATE CODE<br>ASSEMBLY P =  DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


**Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

11 

## D[2] Pak Tape & Reel Infomation 

**==> picture [374 x 296] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) ; 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>i Te 0.342 (.0135)<br>FEED DIRECTION = 1.85 (.073)1.65 (.065) 11.60 (.457)11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>1.75 (.069) T<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>|<br>30.40 (1.197)<br>NOTES :       MAX.<br>; 1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961) ii 3 : 4<br>Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive<br>        avalanche performance.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25°C, L = 0.12mH RG = 25 Ω , IAS = 34A, VGS =10V. Part not recommended for use above this value. Pulse width ≤ 1.0ms; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 

This value determined from sample failure population. 100% tested to this value in production. 

This is only applied to TO-220AB pakcage. 

This is applied to D[2] Pak, when mounted on 1" square PCB (FR4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

12 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFZ44VZPBF/power-mosfet-n-channel-60-v-57-a-0012-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfz44vzpbf/mosfet-n-ch-60v-57a-175deg-c-92w/dp/3155152)
---

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