# Power MOSFET, N Channel, 60 V, 55 A, 0.0165 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8650250/)

**URL**: https://novapart.co/products/IRFZ44VPBF/power-mosfet-n-channel-60-v-55-a-00165-ohm-to
**SKU**: IRFZ44VPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3520
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Di

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 115W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 55A |
| Drain Source On State Resistance | 0.0165ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650250/)

PD - 94826A 

## IRFZ44VPbF 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free 

## **Description** 

Advanced HEXFET[®] Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

## HEXFET[®] Power MOSFET 

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**----- Start of picture text -----**<br>
D<br>VDSS = 60V<br>R  = 16.5m Ω<br>DS(on)<br>G<br>ID = 55A<br>S<br>: RX<br>TO-220AB<br>**----- End of picture text -----**<br>


|~~or~~|**Parameter**<br>~~or~~<br>~~tT~~|**Max.**<br>~~env’...~~|**Max.**<br>~~env’...~~|**Units**<br>~~env’...~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~or~~<br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~or~~<br>~~tT ~~|55<br> ~~env’...~~||A<br>~~env’...~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V|39|||
|IDM<br>a|Pulsed Drain Current|220|||
|PD@TC= 25°C<br>~~ee~~|Power Dissipation<br>~~ee~~|115<br>~~ee~~||W<br>~~ee~~|
|~~a~~<br>~~——~~|Linear DeratingFactor<br>|0.77<br>||W/°C<br>|
|VGS<br>~~——~~|Gate-to-Source Voltage<br>|± 20<br>||V<br>|
|EAS<br>~~——ie~~|Single Pulse Avalanche Energy<br>~~ie~~|115<br>~~ie~~||mJ<br>~~ie~~|
|IAR<br>~~i~~|Avalanche Current<br>~~i~~|55<br>~~i~~||A<br>~~i~~|
|EAR<br>~~ime~~|Repetitive Avalanche Energy<br>~~ime~~|11<br>~~ime~~||mJ<br>~~ime~~|
|dv/dt<br>~~ie~~|Peak Diode Recoverydv/dt<br>~~ie~~|4.5<br>~~ie~~||V/ns<br>~~ie~~|
|TJ<br>TSTG<br>~~—~~|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~ee~~||°C<br>~~ee~~|
|~~—~~<br>a|SolderingTemperature, for 10 seconds<br>~~ee~~|300(1.6mm from case)<br>~~ee~~|||
|~~oo~~|Mounting torque, 6-32 or M3 srew<br>~~oo~~|10 lbf•in (1.1N•m)<br>~~oo~~||~~oo~~|
|**Thermal Resistance**<br>~~oo~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|1.3|°C/W|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––||
|RθJA|Junction-to-Ambient|–––|62||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|1.3||
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|62||



www.irf.com 

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## IRFZ44VPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|||~~es ee~~|~~ee~~|~~ee~~|||
|---|---|---|---|---|---|---|
||**Parameter**<br>ee|**Min.**<br>ee<br>~~es ee~~<br>~~es~~|**Typ. **<br>ee<br>~~ee~~<br>~~ee~~|**Max. **<br>ee<br>~~ee~~<br>~~ee~~|**Units**<br>ee|**Conditions**|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~<br>~~es~~|60<br>~~es ee~~<br>~~es~~<br>~~es~~<br>~~ee~~<br>|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>|–––<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>|V<br>~~es~~|VGS= 0V, ID= 250µA|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~es~~|–––<br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~es~~|0.062<br> ~~ee ~~<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br> ~~ee~~<br>~~ee~~<br>~~es~~|V/°C<br>~~ee~~|Reference to 25°C, ID= 1mA<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~**e**e~~|–––<br>~~es~~<br>~~es~~<br>~~**e**d~~|16.5<br>~~es~~|mΩ|VGS= 10V, ID= 31A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es ~~<br>~~ee~~<br>~~es~~|2.0<br>~~ee ~~<br> ~~es ~~<br>~~ee~~<br>~~**e**e~~<br>~~s~~|–––<br> ~~es~~<br> ~~es ~~<br>~~ee~~<br>~~**e**d~~<br>~~s~~|4.0<br> ~~es~~<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~®~~<br>~~®~~|
|gfs|Forward Transconductance<br>~~es~~|24<br>~~**e**e~~<br>~~s~~|–––<br>~~**e**d~~<br>~~s~~|–––<br>~~ee~~|S|VDS= 25V, ID= 31A<br>~~®~~|
|IDSS|Drain-to-Source Leakage Current<br>~~es~~<br>~~ee~~<br>~~————~~|–––<br>~~**e**e ~~<br>~~s~~<br>~~ee~~|–––<br> ~~**e**d~~<br>~~s ~~<br>~~ee~~|25<br> ~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~————~~|VDS= 60V, VGS= 0V<br>~~®~~|
|||–––<br>~~ee~~<br>~~————~~|–––<br>~~ee~~<br>~~————~~|250<br>~~ee~~<br>~~————~~||VDS= 48V, VGS= 0V, TJ= 150°C<br>~~————~~|
|IGSS<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~————~~|–––<br>~~————~~|–––<br>~~————~~|100<br>~~————~~|nA<br>~~————~~|VGS= 20V<br>~~————~~|
||Gate-to-Source Reverse Leakage<br>~~es~~<br>|–––<br>~~es~~<br>**ee**<br>|–––<br>~~es~~<br>|-100<br>~~es~~<br>||VGS= -20V|
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>|–––<br>~~ee~~<br>**ee**<br>|–––<br>~~ee~~<br>|67<br>~~ee~~<br>|nC|ID= 51A<br>VDS= 48V<br>VGS= 10V, See Fig. 6 and 13<br>~~®~~|
|Qgs<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>**ee**<br>~~ee~~|–––<br>~~ee~~|18<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~ee~~<br>~~a~~|Gate-to-Drain("Miller")Charge<br><br>~~ee~~|–––<br>**ee**<br><br>~~ee~~<br>ee|–––<br><br>~~ee~~|25<br><br>~~ee~~|||
|td(on)<br>~~ee~~<br>~~a~~|Turn-On Delay Time<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>ee|13<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|ns|VDD= 30V<br>ID= 51A<br>RG= 9.1Ω<br>RD= 0.6Ω, See Fig. 10<br>~~®~~<br>~~®~~<br>~~fe~~|
|tr<br>~~a~~<br>es|Rise Time<br>~~ee~~|–––<br>ee<br>~~ee~~|97<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~a~~<br>es|Turn-Off Delay Time<br>~~ee~~<br>~~es~~|–––<br>ee<br>~~ee~~|40<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>es|Fall Time<br>~~ee~~<br>~~es~~<br>~~dts~~|–––<br>~~ee~~<br>~~dts~~|57<br>~~ee~~<br>~~dts~~|–––<br>~~ee~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~dts~~|–––<br>~~dts~~|~~dts~~|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~®~~<br>~~fe~~|
|LS<br>~~ee~~|Internal Source Inductance<br>~~dts~~<br>|–––<br>~~dts~~<br>ee<br>|~~dts~~<br>|–––<br>|nH||
|Ciss<br>~~ee~~<br>ee|Input Capacitance<br>~~es~~<br><br>|–––<br>~~es~~<br>ee<br><br>ee<br>|1812<br>~~es~~<br><br>|–––<br>~~es~~<br><br>|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~ee~~<br>ee|Output Capacitance<br>~~ee~~<br>|–––<br>ee<br>~~ee~~<br>ee<br><br>ee|393<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Crss<br>~~ee~~<br>ee|Reverse Transfer Capacitance<br><br>~~ee~~|–––<br>ee<br><br>ee<br>~~ee~~<br>ee|103<br><br>~~ee~~|–––<br><br>~~ee~~|||



## **Source-Drain Ratings and Characteristics** 

**Parameter Min. Typ. Max. Units Conditions** IS Continuous Source Current ––– ––– 55 MOSFET symbol D ~~ea~~ (Body Diode) showing  the ISM Pulsed Source Current ––– ––– 220 integral reverse G ~~ee~~ (Body Diode) p-n junction diode. S ~~ee—{]6ee (a~~ VSD Diode Forward Voltage ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V trr Reverse Recovery Time ––– 70 105 ns TJ = 25°C, IF = 51A ~~SE ee ®~~ Qrr Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs ton ~~ee~~ Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ~~SnSn =~~ 

0) Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

Starting TJ = 25°C, L = 89µH RG = 25 Ω , IAS = 51A. (See Figure 12) 

ISD ≤ 51A , di/d t ≤ 227A/µs, VDD ≤ V(BR)DSS, 

TJ ≤ 175°C 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

www.irf.com 

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## IRFZ44VPBF 

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**----- Start of picture text -----**<br>
 1000 VGS  1000 VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V A ee 6.0V a<br>5.5V 5.5V<br> 100 5.0V 5.0V<br>BOTTOM4.5V BOTTOM4.5V<br> 100<br>LL “A at | ee = —___-<br> 10<br>a Mr<br>4.5V 4.5V<br> 10<br> 1 21 f =<br>Soest met eeeie ” (aaaeee<br>a a 20µs PULSE WIDTHT  = 25J °C a n 20µs PULSE WIDTHT  = 175J °C<br>0.1 coir rr  1 TAT TL<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000 3.0<br>ID = 55A<br>SS SSS S55 === === ae eee<br>aPt ty tT te te T  = 25  CJ tT tt ° [te] 2.5 Yt | | | | | ty ey dl<br> 100 POPE| L eereTT TTe I 2.0 CEEPET TT [TTT] ere<br>Sae=- T  = 175  CJ ° A<br>ee 2a Pt ttt tT tT Te Ty<br>rlT iyi 2 tT Pte pt pt 1.5 Yt | | | | | |+4eT<br> 10 1.0<br>AB/GRRRREEEEEEEES Et |eat<br>ee eT PEEL<br>Py tT tt tp te pt pe ee 0.5<br>V      = 25VDS<br>T T 20µs PULSE WIDTH T Pt ett Ty ey VGS yy = 10V<br> 1 PLETE 0.0 PET ee te te<br>4 5 6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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## IRFZ44VPbF 

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**----- Start of picture text -----**<br>
4000 VGS   = 0V,       f = 1 MHZ 20 ID = 51A VDS= 48V<br>Cis = Cgs + Cgd, Cds SHORTED VDS= 30V<br>| | | Crss    = Cgd  16 HE E VDS= 12V REE<br>3000 C oss    = C ds  + C gd<br>12<br>a lA<br>el a PEEP A<br>2000 Ciss TTTTA<br>NX 8 V<br>any 4ennen<br>1000 NTE [EE] 7 PT TT A<br>4<br>Coss<br>SOUT, «KARR +<br>eee! Crss = 7A | | tt<br>0 ee elllll 0 VIE<br>1 10 100 0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>SSS SSS T  = 175  CJJ  SSS ° SS =  se: BY RDS(on)<br> 100 R Saa =”isi itl<br>10us<br>a aa  100 ee l l<br>a T  = 25  CJJ ° Pe<br> 10 a 2 Secs<br>100us<br>Sees eect emetiit<br>Sa S e  10 CYAT TI PIE THIF<br>1ms<br> 1<br>eS  TCC = 25  C°° ° ln 10ms<br> TJJ = 175  C<br>0.1 SSe S V      = 0 V GSGS SL  1  Single Pulse H t<br>0.2 0.7 1.2 1.7 2.2  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SDSD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
 1000 SSS SSS  1000 =<br>T  = 175  CJJ °<br> 100 R a Saa  100 ee<br>a T  = 25  CJJ °<br> 10 a 2<br>Sees<br>Sa S e  10<br> 1<br>eS  TCC = 25  C°° °<br> TJJ = 175  C<br>0.1 SSe S V      = 0 V GSGS SL  1  Single Pulse<br>0.2 0.7 1.2 1.7 2.2  1<br>V     ,Source-to-Drain Voltage (V)SDSD DS<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SDSD<br>**----- End of picture text -----**<br>


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## IRFZ44VPBF 

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60 Pitt<br>nN RRtit tt | tt<br>50<br>HORACE<br>40 PTET RAAT ETT<br>Pi TT TT NET TT<br>30 PT tT eT tT TUNE ET<br>ERR ReeeNEe<br>20 Yt<br>Pi tT?| | tt| | fdrte [tN] ENE<br>10 Pit? |<br>Pit te t iteTT TT teTT yyA<br>0<br>25 50 75 100 125 150 175<br>°<br>PEPEEEE<br>T   , Case TemperatureC (  C)<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


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≤ 1<br>≤ 0.1 %<br>cavreaor<br>. OF<br>Fig VDS  10a. Switching Time Test Circuit<br>90%<br>|[\ |<br>10% /\ /\ |<br>VGS<br>— YY<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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 10<br>a a a a ee<br>0 eee<br> 1<br>D = 0.50<br>= = eee<br>0.20<br>a a a<br>0.10 me eee PDM<br>0.1 0.05<br>t1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>ee. Se eee ee eee eee Notes:<br>1. Duty factor D = t   / t1 2<br>i 2. Peak TJ = P DM x  ZthJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## IRFZ44VPbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>¢ Jt tp 0.01 Ω<br>Fig 12a. Unclamped Inductive Test Circuit<br><— tp — V(BR)DSS<br>\<br>//al<br>IAS<br>Fig 12b. Unclamped Inductive Waveforms<br>° QG —_<br>V i<br>A QGS QGD<br>VG Soe<br>Charge<br>**----- End of picture text -----**<br>


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250<br>ID<br>po TOP 21A<br>36A<br>200 BOTTOM 51A<br>Neg<br>PAP<br>PN | tt<br>150<br>NA<br>100<br>NS Gh GEER EEEE<br>NN<br>50 pt NN<br>SSS<br>0 pot | SS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Vs. Drain Current<br>Fig 12c. Maximum Avalanche Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>i | +<br>es D.U.T. -VDS<br>VGS<br>(at<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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## IRFZ44VPBF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


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## IRFZ44VPbF 

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EXAMPLE: THIS  IS  AN IRF1010<br>L OT CODE 1789 INTERNATIONAL PART  NUMBER<br>AS S EMBLED ON WW 19, 2000IN T HE AS S EMBLY L INE "C" RECTIFIERLOGO IORIRF1010o19c<br>17 89 DATE CODE<br>Note: "P" in as sembly line position AS SEMBL Y YEAR 0 =  2000<br>indicates "Lead - Free" L OT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


**Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

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8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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> alternatives. They guarantee delivery even during supply chain disruptions and
> typically respond to quote requests within one business day.
> [Request a quote](https://novapart.co/quote/) — it's free and there's no
> minimum order.