# Power MOSFET, N Channel, 60 V, 48 A, 0.023 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2725995/)

**URL**: https://novapart.co/products/IRFZ44ESTRLPBF/power-mosfet-n-channel-60-v-48-a-0023-ohm-to-263
**SKU**: IRFZ44ESTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8960
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 48A |
| Drain Source On State Resistance | 0.023ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725995/)

PD - 95572 

## IRFZ44ESPbF 

## IRFZ44ELPbF HEXFET[®] Power MOSFET 

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||||
|---|---|---|
|Advanced Process Technology|
|Surface Mount (IRFZ44ES)|D|VDSS = 60V|
|Low-profile through-hole (IRFZ44EL)|
|175°C Operating Temperature|
|R|= 0.023Ω|
|Fast Switching|DS(on)|
|Fully Avalanche Rated|G|
|Lead-Free|ID = 48A|
|S|
|Fifth Generation HEXFETs from International Rectifier utilize advanced|
|processing techniques to achieve extremely low  on-resistance per silicon area.|
|This benefit, combined with the fast switching speed and ruggedized device|
|design that HEXFET Power MOSFETs are well known for, provides the designer|
|with an extremely efficient and reliable device for use in a wide variety of|
|[[2]]|Pak is a surface mount power package capable of accommodating die|
|D   Pak2|TO-262|

**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D[[2]] Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D[2] Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44EL) is available for low-profile applications. 

## **Absolute Maximum Ratings** 

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|||||||
|---|---|---|---|---|---|
|7a|Parameter|Max.|J|Units|
|ID @ TC = 25°C|Continuous Drain Current, VGS @ 10V|48|
|ID @ TC = 100°C|Continuous Drain Current, VGS @ 10V|34|A|
|IDM|Pulsed Drain Current|192|
|PD @TC = 25°C|Power Dissipation|110|W|
|eea|
|a|Linear Derating Factor|0.71|W/°C|
|a|VGS|Gate-to-Source Voltage|± 20|-—|V|
|EAS|Single Pulse Avalanche Energy|220|mJ|
|a|IAR|Avalanche Current|29|A|
|a|EAR|Repetitive Avalanche Energy|11|mJ|
|a|dv/dt|Peak Diode Recovery dv/dt|5.0|V/ns|
|TJ|Operating Junction and|-55  to + 175|
|TSTG|Storage Temperature Range|°C|
|Soldering Temperature, for 10 seconds|300 (1.6mm from case )|
|a|Mounting torque, 6-32 or M3 srew|10 lbf•in (1.1N•m)|
|Thermal Resistance|
|Parameter|Typ.|Max.|Units|
|RθJC|Junction-to-Case|–––|1.4|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|62|
|www.irf.com|1|

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## IRFZ44ES/LPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>Ge|**Min. **<br>Ge<br>~~es~~|**Typ. **<br>Ge<br>~~Gs~~|**Max. **<br>Ge<br>~~rs~~|**Units**<br>Ge<br>~~Gs~~|**Conditions**<br>Ge|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~Rs~~|60<br>~~Rs~~<br>~~es~~<br>~~Gd~~|–––<br>~~Rs~~<br>~~Gs~~<br>~~es~~|–––<br>~~Rs~~<br>~~rs~~<br>~~es Os~~|V<br>~~Rs~~<br>~~Gs~~<br>~~Os~~|VGS= 0V, ID= 250µA<br>~~Rs~~|
|DV(BR)DSS/DTJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~<br>~~es~~<br>~~Gd~~<br>~~rs~~|0.063<br>~~Gs ~~<br>~~es~~<br>~~es~~<br>~~es~~|–––<br> ~~rs~~<br>~~es~~<br>~~es Os~~<br>~~es~~|V/°C<br>~~Gs~~<br>~~es~~<br>~~Os~~<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~es~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~Gd ~~<br>~~es~~<br>~~rs~~<br>~~Gs~~|––– <br> ~~es~~<br>~~es~~<br>~~es~~<br>~~rs~~|0.023<br>~~es Os~~<br>~~es~~<br>~~es~~<br>~~rs~~|Ω<br>~~Os~~<br>~~es~~<br>~~es~~<br>~~rs~~|VGS= 10V, ID= 29A<br>~~es~~|
|VGS(th)|Gate Threshold Voltage<br>~~rs~~|2.0<br>~~rs ~~<br>~~rs~~<br>~~Gs~~<br>~~rs~~|–––<br> ~~es ~~<br>~~rs~~<br>~~rs~~<br>~~es~~|4.0<br> ~~es~~<br>~~rs~~<br>~~rs~~<br>~~ss~~|V<br>~~es~~<br>~~rs~~<br>~~rs~~<br>~~ss~~|VDS= VGS, ID= 250µA<br>~~rs~~<br>~~©~~|
|gfs|Forward Transconductance<br>~~rs~~|15<br>~~Gs ~~<br>~~rs~~<br>~~rs~~|–––<br> ~~rs ~~<br>~~rs~~<br>~~es~~|–––<br> ~~rs~~<br>~~rs~~<br>~~ss~~|S<br>~~rs~~<br>~~rs~~<br>~~ss~~|VDS= 30V, ID= 29A<br>~~rs~~<br>~~©~~|
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~<br>~~**|**~~|–––<br>~~rs ~~<br>~~ee~~<br>~~**|**~~|–––<br> ~~es ~~<br>~~ee~~|25<br> ~~ss~~<br>~~ee~~|µA<br>~~ss ~~<br>~~ee~~|VDS= 60V, VGS= 0V<br> ~~©~~<br>~~ee~~|
|||–––<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~|250<br>~~ee~~||VDS= 48V, VGS= 0V, TJ= 150°C<br>~~ee~~|
||Gate-to-Source Forward Leakage<br>~~**|**~~|–––<br>~~**|**~~|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS= -20V|
|Qg<br>~~es~~<br>~~H__f_______{|~~|Total Gate Charge<br>~~**es**~~<br>~~H__f_______{|~~|–––<br>~~**es**~~<br>~~ee~~<br>~~H__f_______{|~~|–––<br>~~**es**~~|60<br>~~**es**~~|nC|ID= 29A<br>VDS= 48V<br>VGS= 10V, See Fig. 6 and 13<br>~~oF)~~|
|Qgs<br>~~es~~<br>~~H__f_______{|~~|Gate-to-Source Charge<br>~~**es**~~<br>~~H__f_______{|~~|–––<br>~~**es**~~<br>~~ee~~<br>~~H__f_______{|~~<br>~~|~~|–––<br>~~**es**~~<br>~~|~~|13<br>~~**es**~~<br>~~|~~|||
|gs<br>Qgd<br>~~es~~<br>~~H__f_______{|~~|Gate-to-Drain("Miller")Charge<br>~~**es**~~<br>~~H__f_______{|~~|–––<br>~~**es**~~<br>~~ee~~<br>~~H__f_______{|~~<br>~~|~~|–––<br>~~**es**~~<br>~~|~~|23<br>~~**es**~~<br>~~|~~|||
|td(on)<br>~~H__f_______{|~~|Turn-On Delay Time<br>~~H__f_______{|~~<br>~~es~~|–––<br>~~ee~~<br>~~H__f_______{|~~<br>~~| ~~<br>~~es~~|12<br> ~~|~~<br>~~es~~|–––<br>~~|~~<br>~~es~~|ns<br>ee|VDD= 30V<br>ID= 29A<br>RG= 15Ω<br>RD= 1.1Ω, See Fig. 10<br>~~oF)~~<br>©®|
|tr<br>~~H__f_______{|~~<br>~~ot~~<br>ee|Rise Time<br>~~H__f_______{|~~<br>~~ot~~<br>~~ee~~|–––<br>~~ee~~<br>~~H__f_______{|~~<br>~~ot~~<br>~~ee~~|60<br>~~ee~~|–––|||
|td(off)<br>ee|Turn-Off Delay Time<br>~~ee~~|–––<br>~~ee~~|70<br>~~ee~~|–––|||
|tf<br>ee<br>es|Fall Time<br>~~ee~~<br>es|–––<br>~~ee~~<br>es|70<br>~~ee~~<br>ee|–––<br>ee|||
|LS<br>es|Internal Source Inductance<br>~~ee~~|–––<br>~~ee~~|~~ee~~<br>ee|–––<br>~~ee~~<br>ee|nH<br>~~ee~~<br>ee|Between lead,<br>and center of die contact<br>~~ee~~|
|Ciss<br>es<br>es|Input Capacitance|–––|1360<br>ee|–––<br>ee|pF<br>ee|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>©|
|Coss<br>es<br>es<br>ee|Output Capacitance<br>es|–––<br>ee|420<br>ee|–––<br>ee|||
|Crss<br>es<br>ee|Reverse Transfer Capacitance<br>es|–––<br>ee|160|–––|||



## **Source-Drain Ratings and Characteristics** 

|~~ee~~<br>~~SSS~~<br>~~ee~~|**Parameter**<br>~~ee~~<br>~~SSS~~<br>|**Min. **<br>~~ee ee~~<br>~~SSS~~<br>|**Typ. **<br>~~ee~~<br>~~SSS~~<br>|**Max. **<br>~~ee~~<br>~~SSS~~<br>|**Units**<br>~~ee~~<br>~~SSS~~|**Conditions**<br>~~=o~~<br>~~(a~~|**Conditions**<br>~~=o~~<br>~~(a~~|
|---|---|---|---|---|---|---|---|
|IS<br>~~ee~~<br>~~SSS~~<br>~~ee~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~SSS~~<br>|–––<br>~~ee ee~~<br>~~SSS~~<br>|–––<br>~~ee~~<br>~~SSS~~<br>|48<br>~~ee~~<br>~~SSS~~<br>|~~ee~~<br>~~SSS~~<br>~~eee~~|G<br>MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>~~=o~~<br>~~(a~~<br>~~eee~~<br>~~@~~|S<br>D<br>~~=o~~<br>~~(a~~|
|ISM<br>~~ee~~<br>~~SSS~~<br>~~ee~~<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~ee~~<br>~~SSS~~<br>~~ee~~<br>~~eee~~|–––<br>~~ee ee~~<br>~~SSS~~<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~SSS~~<br>~~ee~~<br>~~eee~~|192<br>~~ee~~<br>~~SSS~~<br>~~ee~~<br>~~eee~~||||
|VSD<br>~~SSS~~<br>~~ee~~<br>~~a~~<br>~~Sn~~|Diode Forward Voltage<br>~~SSS~~<br><br>~~eee~~<br>~~Sn~~|–––<br>~~SSS~~<br><br>~~eee~~|–––<br>~~SSS~~<br><br>~~eee~~|1.3<br>~~SSS~~<br><br>~~eee~~|V<br>~~SSS~~<br>~~eee~~|TJ= 25°C, IS= 29A, VGS= 0V<br>~~(a~~<br>~~eee~~<br>~~@~~||
|trr<br>~~a~~<br>~~Sn~~<br>~~—.>~~|Reverse Recovery Time<br>~~eee~~<br>~~Sn~~<br>~~—.>~~<br>~~HHH~~|–––<br>~~eee~~<br>~~HHH~~|69<br>~~eee~~<br>~~HHH~~|104<br>~~eee~~<br>~~HHH~~|ns<br>~~eee~~<br>~~HHH~~|TJ= 25°C, IF= 29A<br>di/dt = 100A/µs<br>~~eee~~<br>~~@~~<br>~~®~~||
|Qrr<br>~~a~~<br>~~Sn~~<br>~~—.>~~|Reverse RecoveryCharge<br>~~eee~~<br>~~Sn~~<br>~~—.>~~<br>~~HHH~~|–––<br>~~eee~~<br>~~HHH~~|177<br>~~eee~~<br>~~HHH~~|266<br>~~eee~~<br>~~HHH~~|nC<br>~~eee~~<br>~~HHH~~|||
|ton<br>~~Sn~~<br>~~—.>~~|Forward Turn-On Time<br>~~Sn~~<br>~~—.>~~<br>~~HHH~~<br>~~eG~~|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)<br>~~HHH~~<br>~~®~~<br>~~eG~~||||||



© ISD ≤ 29A , di/d t ≤ 320A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

- ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). 

For recommended  soldering techniques refer to application note #AN-994. 

2 

www.irf.com 

## IRFZ44ES/LPbF 

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 1000  1000<br>VGS VGS<br>TOP 15V TOP 15V<br>10V 10V<br>8.0V a 8.0V<br>7.0V a 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br> 100 I ieee al|  100 | 0Ciea<br>4.5V<br> 10 77aD> Amarilla 4.5V J} ttt  10 |__|gig iE e |<br>Fo oe 7 ea<br> 1 HPIN HT EL 20µs PULSE WIDTHT  = 25J °C  1 aGna ne 20µs PULSE WIDTHT  = 175J °C<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br> 1000 2.5 ID = 48A<br>SS SS 55555555 Poe LTE<br>ee L LL<br>2.0<br>T  = 25  CJJ ° A<br> 100 PEAR E e== EE E T LAr<br>T  = 175  CJJ ° 1.5<br>=== Sa HL at<br>===> =====  ae LEE ee<br>1.0<br>ZO) Dy<br> 10 et<br>———— ve<br>0.5<br>PaRSSSEEES<br> 1 PoFLFL ET tT o V      = 25V20µs PULSE WIDTHDS20µs PULSE WIDTHDS r ES 0.0 IMIUE P VGS = 10V<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GSGS T  , Junction TemperatureJ (  C)°<br>I   ,  Drain-to-Source Current (A)D I   ,  Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 1000 SS SS 55555555<br>ee<br>T  = 25  CJJ °<br> 100 PEAR E e==<br>T  = 175  CJJ °<br>=== Sa<br>===> =====  ae<br>ZO)<br> 10<br>————<br>PaRSSSEEES<br>DS ES<br>o V      = 25V20µs PULSE WIDTHDS20µs PULSE WIDTHDS r<br> 1 PoFLFL ET tT<br>4 5 6 7 8 9 10<br>V     , Gate-to-Source Voltage (V)GSGS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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## IRFZ44ES/LPbF 

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20<br>IDD = 29<br>VDSDS = 48V 48V<br>VDSDS = 30V 30V<br>He e KH<br>16<br>yr<br>12 SERRE Ae<br>8 HZ<br>Pit TT A<br>Pit | LA<br>4<br>PIA tt tt<br>FOR TEST CIRCUIT<br>0 2AGEEEEAGEEEE a SEE FIGURE       1313<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)GG<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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2500 20<br>VGS = 0V, f = 1MHz IDD = 29<br>Ciss = Cgs + Cgd , C      SHORTEDds VDSDS = 48V 48V<br>Crss = Cgd VDSDS = 30V 30V<br>2000 | Coss = Cds + Cgd 16 He e KH<br>Ciss<br>ELT tt Ty yr<br>1500 e e t 12 SERRE Ae<br>Coss<br>1000 ee all 8 HZ<br>SET FET Pit TT A<br>eS ll Pit | LA<br>500 Crss 4<br>e e PIA tt tt<br>FOR TEST CIRCUIT<br>0 e l ll 0 2AGEEEEAGEEEE a SEE FIGURE       1313<br> 1  10  100 0 10 20 30 40 50 60<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)GG<br>Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br>===> =n:<br>a ee ee ee ee ee ee ou tesa ou<br>a ee ee ee eee 260 |<br>10us<br> 100 T  = 175  CJ °  100<br>a PHOS eH 100us<br> 10 | Yf7 | [| {| {| | |  10 ps Blill<br>A f T  = 25  CJ ° cette re 1ms t<br> TC = 25  C° 10ms<br> TJ = 175  C°<br> 1 oeptee| Tt | V      = 0 V GS  1 py  Single Pulse 1<br>0.5 1.0 1.5 2.0 2.5  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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## IRFZ44ES/LPbF 

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50<br>50<br>SCOTTI TTT TT —_V 6<br>40<br>40 PANE w e (ah<br>PEP TNE ETE ET °°<br>30<br>30 SEESERXNUEEES tov 1<br>≤ 0.1 %<br>SERRE ENEEe musewm<br>20<br>20 pitti tt EN Fig 10a. Switching Time Test Circuit<br>VDS<br>FEEEEEEE EEG<br>10 90%<br>10<br>Pi titi yi Tt tyA Y[_\ |<br>0<br>0 25 50 75 100 125 150 175<br>25 CECE 50T   , Case TemperatureCT   , Case TemperatureC 75 100 125 (  C)°(  C)150° 175 10%VGS /\ /\ |<br>— YY<br>td(on) tr td(off) tf<br>Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms<br>Case Temperature<br> 10<br>a eeee ee<br>Ae<br> 1<br>D = 0.50<br>0.20 ae<br>0.10<br>PDM<br>0.1 e 0.050.02 soem?! SINGLE PULSE [a] r| tinte t1<br>0.01 (THERMAL RESPONSE) t2<br>Tor | | Pry Notes:<br>Me TT 1. Duty factor D = t   / t1 2<br>a eeeeelll 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


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## IRFZ44ES/LPbF 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>¢ Jt tp 0.01Ω<br>Fig 12a. Unclamped Inductive Test Circuit<br>**----- End of picture text -----**<br>


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oe tp V(BR)DSS<br>\<br>//al<br>IAS<br>12b. Unclamped Inductive<br>° QG —_<br>V i<br>A QGS QGD<br>VG ee<br>Charge<br>**----- End of picture text -----**<br>


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500<br>ID<br>NESE TOP 12A<br>21A<br>KOREEEE<br>400 PN BOTTOM 29A<br>300 SaNSSe eee<br>NAG PP<br>200<br>NN KE<br>PAN]<br>100 pfSS a<br>0 pt | |SS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>Vs. Drain Current<br>Fig 12c. Maximum Avalanche Energy<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>i | +<br>es D.U.T. -VDS<br>VGS<br>(a<br>3mA<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


www.irf.com 

6 

## IRFZ44ES/LPbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


www.irf.com 

7 

## IRFZ44ES/LPbF 

## Dimensions are shown in millimeters (inches) 

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T HIS IS AN IRF530S WIT HLOT  CODE 8024 INT ERNATIONAL cS PART  NUMBER<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TOR 002.<br>Note: "P" in assembly lineposition indicates "Lead-Free" ASSEMBLYLOT CODE 80LTae?tUT]O(24 DATE CODEYEAR 0 =  2000WEEK 02LINE L<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER F530S<br>LOGO TARP804 002A) DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASS EMBLYLOT CODE u T t amao pu ? YEAR 0 =  2000PRODUCT (OPTIONAL)<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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## IRFZ44ES/LPbF 

## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [282 x 162] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO —TEARIRL3103L719C<br>Note: "P" in assembly line 17 89 DATE CODE<br>position indicates "Lead-Free" ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>OR<br>PART NUMBER<br>INTERNATIONAL os<br>RECTIFIER IRL3103L<br>LOGO TeaRP719A<br>17 89 DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>AS SEMBLY PRODUCT (OPTIONAL)<br>LOT CODE YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


www.irf.com 

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## IRFZ44ES/LPbF 

Dimensions are shown in millimeters (inches) 

**==> picture [339 x 143] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>ZN — 6666/6 pd TL 0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>et 16.10 (.634) | Te 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


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FEED DIRECTION<br>**----- End of picture text -----**<br>


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13.50 (.532) 27.40 (1.079)<br>’ 12.80 (.504) 23.90 (.941) AP<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>NOTES : OT ll JL 30.40 (1.197)      MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) I 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFZ44ESTRLPBF/power-mosfet-n-channel-60-v-48-a-0023-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfz44estrlpbf/mosfet-n-ch-60v-48a-to-263/dp/2725995)
---

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