# Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-263 (D2PAK), Surface Mount
**URL**: https://novapart.co/products/IRFZ34NSTRLPBF/power-mosfet-n-channel-55-v-29-a-004-ohm-to-263
**SKU**: IRFZ34NSTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7380
**Stock**: 1000+
**Lead Time**: 113 days (indicative)
## Description
Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power D
## Specifications
| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 68W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 29A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2725994/)
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D Vv = 55V
DSS ~
Rpsvon) = 0.040 Ω
G
Ip =29A
S D
aa rm
Pp N D> SS A
IS {a Z*
° <—
D Pak2 TO-262
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θ
PRic
R θ va | dumelion-to-Case Junction-to-Ambient
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∆ ∆
Ω
Static Drain-to-Source On-Resistance | —- | —— 0.040]| Ves = 10V, Ip = 16A@
Gate Threshold Voltage | 2.0 |—-|4.0] Vv | Vos= Ves, lp = 250HA
Forward Transconductance 165 |—-/—-| s | Vps = 25V, Ip = 16A
Ipss Drain-to-Source Leakage Current | —- | | 25 | yA Vos = SV, Ves = OV
lass Gate-to-Source Forward Leakage || —-—— || —— || 100250 || nA VesVos == 44V,20V Ves = OV, Ty = 150°C
___| TotalGate-to-SourceGate ChargeReverse Leakage |p=—- | — ]-100|[a4 [o=Ves 16a= -20V
Qs | Gate-to-Source Charge | —- |-—— | 6.8 | nc | Vps = 44V
IQgi——| Gatte-to-Drain ("Miller") Charge | — | — | 14 | Ves = 10V, See Fig. 6 and 13 @©
(| [RiseTime——SSS~SCS] Turn-On Delay Time =o = V0 = 28V
Turn-Off | AT — | | I= HA Ω
Delay Time Tar [=] * |
Ω,
Fall Time |-— | 40 | -—- | Ro=Rp= 1 .88 See Fig. 10 ©@©
Ls Internal Source Inductance — | 75 ;— nH Between lead,
and center of die contact
input Capacitance [= 700 [=] | Ves= ov
Ciss OutputReverseCapacitanceTransfer Capacitance [==——— [240| 100 |[=]—— pF | f Vos = 1.0MHzZ, = 25V See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. | Typ. |Max. | Units Conditions
D
Is Continuous Source Current — — 29 MOSFET symbol
(BodyB . .
Ism Pulsed Diode) Source Current A || showingintegral reversethe G
(Body Diode) © — |—| 100 p-n junction diode. S
**----- End of picture text -----**
ISD ≤ ≤ ≤ ≤
@ Vpp = 25V, starting Tj = 25°C, L = 610HH @ Pulse width ≤ 300ys; duty cycle ≤ Ω
Uses IRFZ34N data and test conditions
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e Rectifier
1000 VGS 1000 VGS
TOP 15V TOP 15V
10V 10V
8.0V | 8.0V
7.0V aa 7.0V a
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 We 100 Wi
al 7
a) 2 a ee ~ cece ee Ell
ZamanZ ry eel Se 7 Al
10 ye 10 ey) Zomesll
4.5V
4.5V
Lp la 2 0 ma ZA eeee
TM Me TM
1 Aa 20µs PULSE WIDTH A 1 Z| 20µs PULSE WIDTH
0.1 1 10 100 0.1 1 10 100
V , Drain-to-Source Voltage (V)DS V , Drain-to-Source Voltage (V)DS
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100 2.4
I = 26ADD
=== ===> —— L LL
2.0
T = 25°CJ
| | e warT| dt PTL pe11
10 GWT| gf AT | T = 175°CJ |yp]| | 1.61.2 PLEPELPERLE erAerPELPERLE erAerPERLE erAer erAerAerer
> == S==Saaa= 0.8 Cer yyy
7 fe ert
PPT Patni
7 0.4 PEPE EP
V = 25VDS
1 Poy oy fort 20µs PULSE WIDTH | A 0.0 P eTETE eee V = 10VGSGS
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
V , Gate-to-Source Voltage (V)GS T , Junction Temperature (°C)JJ
I , Drain-to-Source Current (A)D I , Drain-to-Source Current (A)D
(Normalized)
D
I , Drain-to-Source Current (A)
DS(on)
R , Drain-to-Source On Resistance
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**----- Start of picture text -----**
2.4
I = 26ADD
L LL
2.0 PTL pe11
1.21.61.2 PLEPELPERLE erAerPELPERLE erAerPERLE erAer erAerAerer
0.8 Cer yyy
ert
Patni
0.4 PEPE EP
0.0 P eTETE eee V = 10VGSGS
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction Temperature (°C)JJ
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
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**----- Start of picture text -----**
1200 20
V = 0V, f = 1MHzGS I = 16AD
C = C + C , C SHORTEDiss gs gd ds V = 44VDS
1000 aoe Ciss C = CC = C + Crss gdoss ds gd 16 V = 28VDS
PS pe fe fe
800 ea ell ,
Coss 12
aE oe ey A
600
8
400 S S e eae
C 1
C rss
ae Nea 4 ne
200 aE f__|
FOR TEST CIRCUIT
0 TTPP A 0 fyys | SEE FIGURE 13 |
1 10 100 0 10 20 30 40
V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G
Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage
1000 1000
OPERATION IN THIS AREA LIMITED
es ee ee BY R y, DS(on) mail
ee es ee |
100 Se 100
10µs
T = 175°C
J
= Aee eT
10 | | Leyt T = 25°CJJ | [ | fy 10 y hI TT PM N 100µs
pf —— ea e 1ms
———— HEHE T = 25°CC hP a
T = 175°CJ 10ms
1 eeFiFi eeeeeeeeee e V = 0VGSGS A 1 pp Single Pulse h l S S
0.4 0.8 1.2 1.6 2.0 1 10 100
V , Source-to-Drain Voltage (V)SDSD V , Drain-to-Source Voltage (V)DS
C, Capacitance (pF)
GS
V , Gate-to-Source Voltage (V)
I , Drain Current (A)D
I , Reverse Drain Current (A)SDSD
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**----- Start of picture text -----**
1000
es ee ee
ee es ee
100
Se
T = 175°C
J
= Aee
10 | | Leyt T = 25°CJJ | [ | fy
pf
————
1 eeFiFi eeeeeeeeee e V = 0VGSGS
0.4 0.8 1.2 1.6 2.0
V , Source-to-Drain Voltage (V)SDSD
I , Reverse Drain Current (A)SDSD
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3025 Nt ttt tt tT tt Re Vv l DUT. +-
Shee
CCS EET vaov
20 PEN ov 1
≤ 0.1 %
15
CEEEEEENSSEEEaN oe,Svacnng Tne}
ERR Fig 10a. Switching Time Test
10 EERE eeeNEe VDS
90%
Pi EeEeN
tT tt tt ty TN ——
Pitt
5
Pi tT TTT tt
0 Pi titT TTTtty t TttT t Tt tT yy 10% rN
25 50T , Case TemperatureC 75 100 125 ( C)° 150 175 VGS l i
td(on) tr td(off) tf
I , Drain Current (A)D
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**----- Start of picture text -----**
10
aJ eeee
a
D = 0.50
1 p a 0.20 s a an ee gas reecrOe eeTTeel
0.10 es tn ed
er g ee ee eee
0.05 Pee tt PDM
0.1 0.02 SINGLE PULSE
Ce 0.01 (THERMAL RESPONSE) e t1
ee
C S t2
ca ee ee ee
a ee
Notes:
1. Duty factor D = t / t1 2
i ni 2. Peak TJ=P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t , Rectangular Pulse Duration (sec)1
thJC
(Z )
Thermal Response
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**----- Start of picture text -----**
250
I D
Gas TOP 6.5A
11A
L 200 Nae BOTTOM 16A
VDS
Zn BNE
D.U.T.
150
RG + PN
| Ee
- VDD NERVE
IAS 100
_ NEN
tp 0.01Ω
me fy PSS
50
Fig 12a. Unclamped Inductive Test Circuit “SSA —
cow 0 | V = 25V pS [S] DD [SK]
V
(BR)DSS 25 50 75 100 125 150 175
t Starting T , Junction Temperature (°C)J
— p —|
/ VDD
VDS / [‘] \ » Fig 12c. Maximum Avalanche Energy
/ \ Vs. Drain Current
IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.
50KΩ
12V .2µF
—— — QG .3µF
+
10V |LE jt : D.U.T. -VDS
QGS QGD
ale a yy
VGS |
VG 3mA tT] |
IG ID
Charge Current Sampling Resistors
AS
E , Single Pulse Avalanche Energy (mJ)
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**----- Start of picture text -----**
D.U.T + Circuit Layout Considerations
_ • Low Stray Inductance
@ • Ground Plane
• Low Leakage Inductance
| I - Current Transformer
+
- - +
(0
Re • dv/dt controlled by Rg +
• Driver same type as D.U.T. -
•
• D.U.T. - Device Under Test
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**----- Start of picture text -----**
Driver Gate Drive
P.W.
Period D =
P.W. Period
——| 7
t
VGS=10V
t
@ D.U.T. ISD Waveform
Reverse
Recovery Body Diode Forward
Current "| Current di/dt a
©) D.U.T. VDS Waveform Diode Recovery
dv/dt
VDD
ma
Re-Applied
Voltage Body Diode __ Forward Drop a
® Inductor Curent UW
Ripple ≤ 5% ISD
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## Dimensions are shown in millimeters (inches)
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**----- Start of picture text -----**
T HIS IS AN IRF530S WITH PART NUMBER
LOT CODE 8024 INTERNATIONAL cS
ASS EMBLED ON WW 02, 2000 RECT IFIER F530S
IN THE ASSEMBLY LINE "L" LOGO TOR 0021
position indicates "Lead-Free"Note: "P" in assembly line ASSEMBLYLOT CODE 807 WUG, o\? 24 DAT E CODEYEAR 0 = 2000WEEK 02LINE L
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**----- Start of picture text -----**
PART NUMBER
INT ERNATIONAL |
RECTIFIER F530S
LOGO IRP0O2A
80 24 DATE CODE
ASSEMBLYLOT CODE LutOG U Q YEAR 0 = 2000P = DESIGNAT ES LEAD-FREEPRODUCT (OPTIONAL)
WEEK 02
A = ASSEMBLY SITE CODE
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## TO-262 Package Outline
## Dimensions are shown in millimeters (inches)
## TO-262 Part Marking Information
**==> picture [284 x 165] intentionally omitted <==**
**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789 PART NUMBER
ASSEMBLED ON WW 19, 1997IN THE ASSEMBLY LINE "C" INTERNATIONALRECTIFIERLOGO SY IQRIRL3103L719
Note: "P" in assembly line 17 89 DATE CODE
position indicates "Lead-Free" ASSEMBLY YEAR 7 = 1997
LOT CODE WEEK 19
LINE C
OR
PART NUMBER
INTERNATIONAL YS
RECTIFIER IRL3103L
LOGO TeARP719A
DATE CODE
17 89
P = DESIGNATES LEAD-FREE
ASSEMBLY PRODUCT (OPTIONAL)
LOT CODE YEAR 7 = 1997
WEEK 19
A = ASSEMBLY SITE CODE
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Dimensions are shown in millimeters (inches)
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**----- Start of picture text -----**
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)3.90 (.153) : 1.60 (.063)1.50 (.059) 0.368 (.0145)
0.342 (.0135)
FEED DIRECTION 1.85 (.073) 11.60 (.457)
1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
— e999T 1
1.75 (.069)
10.90 (.429) £ | 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)
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FEED DIRECTION
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**==> picture [331 x 169] intentionally omitted <==**
**----- Start of picture text -----**
13.50 (.532) 27.40 (1.079)
, 12.80 (.504) 23.90 (.941) LP
4
330.00 60.00 (2.362)
(14.173) MIN.
MAX.
30.40 (1.197)
NOTES : BO | iL MAX.
1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB. | 26.40 (1.039)24.40 (.961) If 4
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
**----- End of picture text -----**
Data and specifications subject to change without notice.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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