# Power MOSFET, N Channel, 55 V, 29 A, 0.04 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8650195/)

**URL**: https://novapart.co/products/IRFZ34NPBF/power-mosfet-n-channel-55-v-29-a-004-ohm-to-220ab
**SKU**: IRFZ34NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2270
**Stock**: 1000+
**Lead Time**: 190 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.04ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 68W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 29A |
| Drain Source On State Resistance | 0.04ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650195/)

PD - 94807 

## IRFZ34NPbF 

## HEXFET[®] Power MOSFET 

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free 

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D<br>VDSS = 55V<br>R  = 0.040Ω<br>DS(on)<br>G<br>ID = 29A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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TO-220AB<br>**----- End of picture text -----**<br>


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|||||||
|---|---|---|---|---|---|
|Absolute Maximum Ratings|
||-ONON]|Parameter|Max.|Units|
|ID @ TC = 25°C|Continuous Drain Current, VGS @ 10V|29|
|—|j|TT.|Jfo"2»22=|oT|
|ID @ TC = 100°C|Continuous Drain Current, VGS @ 10V|20|A|
|ee|a|IDM|Pulsed Drain Current|100|oe|
|o>|PD @TC = 25°C|Power Dissipation|68|W|
|o>|Linear Derating Factor|0.45|W/°C|
|o>|VGS|Gate-to-Source Voltage|± 20|V|
|EAS|Single Pulse Avalanche Energy|65|mJ|
|Sg|
|a|IAR|Avalanche Current|16|A|
|a|EAR|Repetitive Avalanche Energy|6.8|mJ|
|a|dv/dt|Peak Diode Recovery dv/dt|5.0|V/ns|
|TJ|Operating Junction and|-55  to + 175|
|TSTG|Storage Temperature Range|°C|
|OOpf|Soldering Temperature, for 10 seconds|300 (1.6mm from case )|
|a|Mounting torque, 6-32 or M3 srew|10 lbf•in (1.1N•m)|
|Thermal Resistance|
|Parameter|Min.|Typ.|Max.|Units|
|RθJC|Junction-to-Case|––––|––––|2.2|
|RθCS|Case-to-Sink, Flat, Greased Surface|––––|0.50|––––|°C/W|
|RθJA|Junction-to-Ambient|––––|––––|62|
|Be|
|www.irf.com|1|

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11/3/03 

## IRFZ34NPbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~a~~|**Parameter**<br>~~es~~<br>|**Min.**<br>~~es~~<br>|**Typ. **<br>~~ee~~<br>|**Max.**<br>|**Units**<br>|**Conditions**<br>|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~a DO~~|Drain-to-Source Breakdown Voltage<br>~~es ~~<br>~~DO~~|55<br> ~~es~~<br>~~DO~~|–––<br>~~ee~~<br>~~DO~~|–––<br>~~DO~~|V<br>~~DO~~|VGS= 0V,ID= 250µA<br>~~DO~~|
|∆V(BR)DSS/∆TJ<br>~~a~~<br>~~a~~|Breakdown Voltage Temp. Coefficient<br>|––– <br>|0.052 <br>|–––<br>|V/°C<br>|Reference to 25°C,ID= 1mA<br><br>~~>~~|
|RDS(ON)<br>~~GOO~~<br>~~a~~<br>~~a~~|Static Drain-to-Source On-Resistance<br>~~GOO~~<br>~~ee~~<br>|–––<br>~~GOO~~<br>|––– <br>~~GOO~~<br>|0.040<br>~~GOO~~<br>|Ω<br>~~GOO~~<br>|VGS= 10V,ID= 16A<br>~~GOO~~<br>~~>~~<br>|
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~ee~~<br>|2.0<br>|–––<br>|4.0<br><br>~~DO~~|V<br><br>~~DO~~|VDS= VGS,ID= 250µA<br>~~>~~<br>|
|gfs<br>~~a DG~~|Forward Transconductance<br>~~ee~~<br>~~DG~~|6.5<br>~~DG~~|–––<br>~~DG~~|–––<br>~~DG~~<br>~~DO~~|S<br>~~DG~~<br>~~DO~~|VDS= 25V,ID= 16A<br>~~DG~~|
|IDSS<br>~~——_——~~|Drain-to-Source Leakage Current<br>~~——_——~~|–––<br>~~Sn~~<br>~~Pf~~|–––<br>~~Sn~~<br>~~Pf~~|25<br>~~DO~~<br>~~Sn~~|µA<br>~~DO~~<br>~~Sn~~<br>~~——_——E—e~~|VDS= 55V, VGS= 0V<br>~~Sn~~|
|||–––<br>~~Sn~~<br>~~Pf~~<br>~~——_——~~|–––<br>~~Sn~~<br>~~Pf~~<br>~~——_——~~|250<br>~~Sn~~<br>~~——_——~~||VDS= 44V,VGS= 0V,TJ= 150°C<br>~~Sn~~<br>~~E—e~~|
|IGSS<br>~~——_——~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~——_——~~<br>~~ee~~|–––<br>~~Pf~~<br>~~——_——~~|–––<br>~~Pf~~<br>~~——_——~~|100<br>~~——_——~~|nA<br>~~——_——E—e~~|VGS= 20V<br>~~E—e~~|
||Gate-to-Source Reverse Leakage<br>~~——_——~~<br>~~ee~~|–––<br>~~——_——~~|–––<br>~~——_——~~|-100<br>~~——_——~~||VGS= -20V<br>~~E—e~~|
|Qg<br>~~——_——~~<br>~~a~~|Total Gate Charge<br>~~——_——~~<br>~~ee~~|–––<br>~~——_——~~|–––<br>~~——_——~~|34<br>~~——_——~~|nC<br>~~——_——E—e~~|ID= 16A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13<br>~~E—e~~<br>~~®~~|
|Qgs<br>~~a ~~<br>~~a~~|Gate-to-Source Charge<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|6.8<br>~~ee~~|||
|Qgd<br>~~a~~|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~ee~~|–––|14|||
|td(on)<br>~~a~~<br>~~a~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|7.0|–––|ns|VDD= 28V<br>ID= 16A<br>RG= 18Ω<br>RD= 1.8Ω,See Fig. 10<br>~~®~~<br>~~@~~|
|tr<br>~~a~~|Rise Time|–––|49|–––|||
|td(off)<br>~~a ~~<br>~~a~~|Turn-Off DelayTime<br> ~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|31<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~a~~|Fall Time<br>~~ee~~|–––<br>~~ee~~|40|–––|||
|LD<br>~~a~~<br>~~ee~~|Internal Drain Inductance<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|4.5<br>~~ee~~|–––<br>~~ee~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~@~~<br>~~@&~~|
|LS<br>~~ee~~<br>~~————~~|Internal Source Inductance<br>~~ee~~<br>~~————~~|–––<br>~~ee~~|7.5<br>~~ee~~|–––<br>~~ee~~|||
|Ciss<br>~~————~~|Input Capacitance<br>~~————~~|–––|700|–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5|
|Coss<br>~~————~~|Output Capacitance<br>~~————~~|–––|240|–––|||
|Crss<br>~~————~~|Reverse Transfer Capacitance<br>~~————~~|–––|100|–––|||



## **Source-Drain Ratings and Characteristics** 

||**Parameter**|**Min.**|**Typ. **|**Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS<br>~~{tft~~|Continuous Source Current<br>(Body Diode)<br>~~{tft~~|–––<br>~~{tft~~|–––<br>~~{tft~~|29<br>~~{tft~~|A<br>~~{tft~~<br>**|**<br>~~GOO~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>S<br>D<br>G<br>**|**<br>|<br>~~GO~~|
|ISM<br>~~{tft~~<br>~~Rs~~|Pulsed Source Current<br>(Body Diode)<br>~~{tft~~<br>5<br>~~GOO~~|–––<br>~~{tft~~<br>~~GOO~~|–––<br>~~{tft~~<br>~~GOO~~|100<br>~~{tft~~<br>~~GOO~~|||
|VSD<br>~~Rs~~<br>~~Ce ee~~|Diode Forward Voltage<br>~~GOO~~<br>~~ee~~|–––<br>~~GOO~~<br>~~ee~~|–––<br>~~GOO~~<br>~~ee~~|1.6<br>~~GOO~~<br>~~ee~~|V<br>~~GOO~~<br>~~ee~~|TJ= 25°C, IS= 16A, VGS= 0V<br>~~GO~~<br>~~ee~~|
|trr<br>~~Rs~~<br>~~Ce ee~~<br>~~es~~|Reverse Recovery Time<br>~~GOO~~<br>~~ee~~|–––<br>~~GOO~~<br>~~ee~~|57<br>~~GOO~~<br>~~ee~~|86<br>~~GOO~~<br>~~ee~~|ns<br>~~GOO ~~<br>~~ee~~|TJ= 25°C, IF= 16A<br>di/dt = 100A/µs<br> ~~GO~~<br>~~ee~~<br>~~®~~|
|Qrr<br>~~Ce ee~~<br>~~es~~|Reverse Recovery Charge<br>~~ee~~|–––<br>~~ee~~|130<br>~~ee~~|200<br>~~ee~~|nC<br>~~ee~~||
|ton<br>~~Ce ee~~<br>~~es~~|Forward Turn-On Time<br>~~ee~~<br>~~PSY~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~ee~~<br>~~®~~|||||



## **Notes:** 

© Repetitive rating;  pulse width limited by © ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C 

- © VDD = 25V, starting TJ = 25°C, L = 410µH @ RG = 25Ω, IAS = 16A. (See Figure 12) 

Pulse width ≤ 300µs; duty cycle ≤ 2%. 

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## IRFZ34NPbF 

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1000<br>                   VGS<br> TOP           15V<br>                   10V<br>                   8.0V a<br>                   7.0V ore en<br>                   6.0V<br>                   5.5V<br>100                    5.0V BOTTOM   4.5V Ui] | Peer | TT<br>a<br>10<br> 4.5V<br>AMP ant nS<br>eae ee eee<br>1<br>er CoCo)<br>a Se ae ee ee es<br> 20µs PULSE WIDTH<br>0.1 TTPy  T   = 25°CC<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


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1000<br>                   VGS<br> TOP           15V<br>                   10V<br>                   8.0V ee<br>                   7.0V Es a<br>                   6.0V<br>                   5.5V<br>100                    5.0V BOTTOM   4.5V TT<br>ee<br>10<br> 4.5V<br>| ef / 2 ee ee eee ee<br>YY AM eeell<br>1<br>= T e<br>SSeSSSS cee<br> 20µs PULSE WIDTH<br>0.1 h T yHI e  T   = 175°CC<br>0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain-to-Source Current (A)D<br>**----- End of picture text -----**<br>


## **Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100 a<br>a T  = 25°CJ ee<br>a Z >eae ee<br>10 enPW}| fli a T  = 175°CJ || |ffa|<br>ee<br>2<br>Pfftl | ft | ft<br>Py TP<br> V     = 25VDS<br>1 Pot ff  20µs PULSE WIDTH<br>4 5 6 7 8 9 10<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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2.4<br> I    = 26AD<br>Po LL EEE ELE<br>2.0<br>P E EE<br>ORS ORE ON x<br>1.61.2 PPEEEnanEEA<br>eat pL<br>0.8<br>ea Ge<br>Pa aTEEE<br>0.4 PE<br>0.0 PTTL SP EEELLEEE EEE  V      = 10V GS<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T   , Junction Temperature (°C)J<br>(Normalized)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFZ34NPbF 

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1200 20<br>V      = 0V,         f = 1MHzGS I    = 16AD<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds  V      = 44VDS<br>1000 TT] C iss C      = CC      = C     + Crss         gdoss        ds         gd 16 4- 5  V      = 28VDS<br>NS 4 a a FT ia<br>800<br>SSE C oss 12 ye<br>SHH WA<br>600<br>PSS}XN 8 EEA y,<br>400<br>MN ro | COAT<br>C  rss<br>4<br>ee Sea an el<br>200<br>a vA<br> FOR TEST CIRCUIT<br>0 eeTCOell A 0 (AeHE     SEE FIGURE 13 tT<br>1 10 100 0 10 20 30 40<br>V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

## **Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br>ee ee ee ee<br>100<br>P|<br>T  = 175°C<br>J<br>ee<br>ee ee eee eee<br>T  = 25°CJ<br>10<br>HA s, |_|<br>1 ea e |eee ee V      = 0V GS<br>0.4 0.8 1.2 1.6 2.0<br>V     , Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>a a eeee<br>100<br>PA ll<br>Paes e t 10µs<br>rT CT CT oe NNT<br>100µs<br>10<br>p o<br>1ms<br> T     = 25°CC<br> T     = 175°CJ<br>1 eee  Single Pulse Ott eee ae<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>**----- End of picture text -----**<br>


## **Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFZ34NPbF 

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30 RD<br>VDS<br>Nt tT tT EEE TT yt —<br>25 VGS<br>PENT D.U.T.<br>Pt TT Tt tT RG<br>+<br>20 - VDD<br>pt ETttAATN| ET E T tT I<br>EERE , 10 V<br>15 See eeeeNEE Pulse Width ≤ 1 µs<br>Duty Factor ≤ 0.1 %<br>ERR eeeeeNEe<br>SERENE °<br>10<br>PT TT TT PT TT TN Fig 10a.   Switching Time Test Circuit<br>5 SERRE VDS<br>90%<br>PT TT eT eT tT yy f<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>PTET ET ET tt  yt 10% \ /\<br>Fig 9.   Maximum Drain Current Vs. VGS t VS\ d(on) bi tr >| td(off) mle tf ><br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>SpoeeeeTT<br>D = 0.50<br> 1 m mr<br>0.20<br>SS ee|<br>0.10 ns ee _e e e eee eee<br>e 0.05 e PDM<br>0.1 0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t1<br>tt t2<br>am | tT tT tty typ<br>po<br>Notes:<br>1. Duty factor D = t   / t1 2<br>ee 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFZ34NPbF 

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L<br>VDS<br>D.U.T.<br>RG +<br>AAA - VDD<br>re 10 V l IAS<br>tp 0.01Ω<br>7 Y<br>Wf<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>"_— tp<br>/ VDD<br>/<br>VDS<br>/ : .<br>fy<br>IAS<br>**----- End of picture text -----**<br>


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140<br>                    I D<br>NRE<br>TOP            6.5A<br>120 NE                    11A<br>BOTTOM    16A<br>100 PoNE PX fp<br>aN<br>80 PINEE<br>KORN<br>60 RON NO |<br>P NINE ING EE<br>PPNN<br>40<br>PoE NG<br>Po NA KE<br>20<br>Pi tityA r-_N R Sa<br>0  V      = 25V ee DD ee ee<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>QG .3µF<br>— i mg<br>10 V ELLE [ft 4! D.U.T. +-VDS<br>QGS QGD<br>VGS<br>VG 3mA<br>va =f |<br>a |<br>IG ID<br>Charge Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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## IRFZ34NPbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>D.U.T<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(aa)       Current Transformer<br>| [|] « -<br>+<br>- - +<br>wh<br>00<br>RG •  dv/dt controlled by RG +<br>( nd •  Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•  D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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O) Driver Gate Drive<br>P.W.<br>Period D =<br>a P.W. Period<br>VGS=10V *<br>a 7t<br>® D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current Current di/dt a<br>® D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied YT<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

www.irf.com                                                                                                                      7 

## IRFZ34NPbF 

## TO-220AB Package Outline 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>1.22 (.048)<br>7s 4 6.47 (.255)6.10 (.240)<br>15.24 (.600) | vy C4 it<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>ee 1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>3- SOURCE       4 - DRAIN 3- EMITTER<br>| dar 4- DRAIN 4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [1.40 (.055)] 1.15 (.045) | 3X0.36  (.014)        M    B   A   M [0.93 (.037)] 0.69 (.027) T 2.92 (.115)3X [0.55 (.022)] 0.46 (.018)<br>2.64 (.104)<br>2.54 (.100) || I<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

## TO-220AB Part Marking Information 

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EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL PART NUMBER<br>IN THE ASSEMBLY LINE "C" RECTIFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DATE CODE<br>ASSEMBLY YEAR 7 =  1997<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 10/03 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFZ34NPBF/power-mosfet-n-channel-55-v-29-a-004-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfz34npbf/mosfet-n-55v-29a-to-220/dp/8650195)
---

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