# Power MOSFET, N Channel, 55 V, 17 A, 0.07 ohm, TO-220AB, Through Hole

![Product image](https://novapart.co/image/farnell:8650160/)

**URL**: https://novapart.co/products/IRFZ24NPBF/power-mosfet-n-channel-55-v-17-a-007-ohm-to-220ab
**SKU**: IRFZ24NPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2210
**Stock**: 1000+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Diss

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 45W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-220AB |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 17A |
| Drain Source On State Resistance | 0.07ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650160/)

Fifth Generation HEXFET[®] power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.  The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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|~~V(BR)DSS~~|~~Drain-to-SourceBreakdownVoltage~~<br>~~|~~|~~|55|-~~|~~|-~~|~~|-~~~~**-**-|~~<br>~~——|~~|~~-|~~<br>~~——|V_|~~|~~|Vos=OV,Ip=250A~~|~~|Vos=OV,Ip=250A~~|
|---|---|---|---|---|---|---|---|
|~~V(BR)DSS~~<br>~~VierossTy|~~|~~Drain-to-SourceBreakdownVoltage~~<br>~~|~~<br>~~|BreakdownVoltageTemp.Coefficient——-~~|~~|55|-~~<br>~~|——-~~|~~|-~~<br>~~[0.052]~~|~~|-~~~~**-**-|~~<br>~~——|~~<br>~~-—-|~~|~~-|~~<br>~~——|V_|~~<br>~~||~~|~~|Vos=OV,Ip=250A~~<br>~~|Referenceto25°C,Ip=1mA~~||
|∆<br>∆<br>~~V(BR)DSS~~<br>~~VierossTy|~~<br>~~Rosen)~~<br>~~Vestth)~~|~~Drain-to-Source Breakdown Voltage~~<br>~~|~~<br>~~|BreakdownVoltageTemp.Coefficient——-~~<br>~~StaticDrain-to-SourceOn-Resistance~~|~~| 55 |-~~<br>~~|——-~~<br>~~|—-~~|~~|-~~<br>~~[0.052]~~<br>~~|—-[0.07|~~|~~|-~~~~**-**-|~~<br>~~——|~~<br>~~-—-|~~<br>~~|—-[0.07|~~|~~-|~~<br>~~——| V_ |~~<br>~~|~~v/°C~~|~~<br>~~|—-[0.07||~~|~~| Vos=OV, Ip = 250A~~<br>~~|Referenceto25°C,Ip=1mA~~<br>~~|Ves=10V,Ip=10A®~~||
|~~Vieross Ty |~~<br>~~Rosen)~~<br>~~Vestth)~~<br>Dts|~~| Breakdown Voltage Temp. Coefficient ——-~~<br>~~StaticDrain-to-SourceOn-Resistance~~<br>~~GateThresholdVoltage~~<br>~~|~~|~~|——- ~~<br>~~|—-~~<br>~~|2.0 ||~~|~~[0.052]~~<br>~~|—-[0.07|~~<br>~~||~~|~~-—- |~~<br>~~|—-[0.07|~~<br>~~||~~<br>~~40~~[||Ω<br>~~||~~<br>~~|—-[0.07||~~<br>~~||~~<br>[|~~V|~~|~~| Reference to 25°C, Ip = 1mA~~<br>~~|Ves=10V,Ip=10A®~~<br>~~|Vps=~~Ves,Ip=~~250HA~~||
|~~Rosen)~~<br>~~Vestth)~~<br>Dts|~~Static Drain-to-Source On-Resistance ~~<br>~~GateThresholdVoltage~~<br>~~|~~<br>~~ForwardTransconductance~~<br>~~|~~|~~| —- ~~<br>~~|2.0 ||~~<br>~~|45~~|~~|—-[0.07|~~<br>~~||~~<br>~~|~~|~~|—-[0.07|~~<br>~~||~~<br>~~40~~[|<br>|~~|—-[0.07||~~<br>~~||~~<br>[|~~V|~~<br><br>~~S$|~~|~~|Ves=10V,Ip=10A®~~<br>~~|Vps=~~Ves,Ip=~~250HA~~<br>~~|Vos=25V,Ip=10A~~||
|~~Vestth)~~<br>Dts<br>~~cs~~|~~Gate Threshold Voltage~~<br>~~|~~<br>~~ForwardTransconductance~~<br>~~|~~<br>~~Drain-to-S~~<br>~~Leak~~<br>~~Cc~~<br>~~t~~<br>~~|~~<br>~~Comet~~|~~| 2.0 ||~~<br>~~|45~~<br>~~|—-|—|~~<br>~~Taso]~~|~~||~~<br>~~|—|—-|~~<br>~~|—|~~<br>~~Taso]~~|~~||~~<br>~~40~~ [|<br>~~—|—-|~~<br>~~|—|~~<br>~~Taso]~~|~~|~~<br>~~||~~<br>[| ~~V~~ ~~|~~<br>~~—|—-|~~<br>~~S$|~~<br>~~MA~~|~~| Ves=10V, Ip = 10A®~~<br>~~| Vps=~~Ves, Ip=~~250HA~~<br>~~|Vos=25V,Ip=10A~~<br>~~NogaVgO0 T=TE~~||
|~~|~~<br>~~cs~~|~~Forward Transconductance~~<br>~~|~~<br>~~,~~<br>~~Drain-to-S~~<br>~~Leak~~<br>~~Cc~~<br>~~t~~<br>~~|~~<br>~~[Drdntnsoucelatane~~<br>~~Comet~~|~~| 45 ~~<br>~~|—-|—|~~<br>~~[Drdntnsoucelatane~~<br>~~Taso]~~|~~|~~<br>~~|—|~~<br>~~[Drdntnsoucelatane~~<br>~~Taso]~~|~~|—|~~<br>~~[Drdntnsoucelatane~~<br>~~Taso]~~|~~S$ |~~<br>~~MA~~|~~| Vos=25V, Ip=10A~~<br>~~Vos=55V,Ves=OV~~<br>~~NogaVgO0 T=TE~~||
|~~|~~<br>~~cs~~<br>~~loss~~|~~,~~<br>~~Drain-to-S~~<br>~~Leak~~<br>~~Cc~~<br>~~t~~<br>~~|~~<br>~~[Drdntnsoucelatane~~<br>~~Comet~~<br>~~Gate-to-SourceForwardLeakage~~<br>~~|~~|~~| —- |—|~~<br>~~[Drdntnsoucelatane~~<br>~~Taso]~~<br>~~|-—-|~~|~~|—|~~<br>~~[Drdntnsoucelatane~~<br>~~Taso]~~<br>~~|—-|~~|~~|—|~~<br>~~[Drdntnsoucelatane~~<br>~~Taso]~~<br>~~100|~~|~~MA~~<br>~~|nA~~|~~Vos = 55V, Ves = OV~~<br>~~NogaVgO0 T=TE~~<br>~~Vas=20V~~||
|~~loss~~|~~Comet~~<br>~~Gate-to-SourceForwardLeakage~~<br>~~|~~<br>~~Gate-to-SourceReverseLeakage~~<br>~~|~~|~~Taso]~~<br>~~|-—-|~~<br>~~|—-|~~|~~Taso]~~<br>~~|—-|~~<br>~~|—|-100~~|~~Taso] ~~<br>~~100|~~<br>~~—|-100|~~|~~MA ~~<br>~~|nA~~<br>~~|~~|~~Noga VgO0 T=TE~~<br>~~Vas=20V~~<br>~~Ves=-20V~~||
|~~loss~~<br>~~Qg~~|~~Gate-to-Source Forward Leakage~~<br>~~|~~<br>~~Gate-to-SourceReverseLeakage~~<br>~~|~~<br>~~TotalGateCharge~~<br>~~|~~|~~| -—- |~~<br>~~|—-|~~<br>~~|-—-|~~|~~| —-| ~~<br>~~|—|-100~~<br>~~|-—-|~~|~~100 |~~<br>~~—|-100|~~<br>~~-—-|20|~~|~~| nA~~<br>~~|~~<br>~~|~~|~~Vas = 20V~~<br>~~Ves=-20V~~<br>~~Ip=10A~~||
|~~Qg~~<br>~~Qgs~~|~~Gate-to-Source Reverse Leakage~~<br>~~|~~<br>~~TotalGateCharge~~<br>~~|~~<br>~~Gate-to-SourceCharge~~<br>~~|~~|~~| —- |~~<br>~~|-—-|~~<br>~~|—-~~|~~| —|-100~~<br>~~|-—-|~~<br>~~|—-]~~|~~—|-100 |~~<br>~~-—-|20|~~<br>~~—-]53|~~|~~|~~<br>~~|~~<br>~~|nC|~~|~~Ves = -20V~~<br>~~Ip=10A~~<br>~~|Vos=44v~~||
|~~Qg~~<br>~~Qgs~~<br>~~Qua~~|~~Total Gate Charge~~<br>~~|~~<br>~~Gate-to-SourceCharge~~<br>~~|~~<br>~~Gate-to-Drain("Miller")Charge~~<br>~~|~~|~~| -—- |~~<br>~~|—-~~<br>~~|—-~~|~~| -—-|~~<br>~~|—-]~~<br>~~|—|~~|~~-—-| 20 |~~<br>~~—-]53|~~<br>~~|—|76|~~|~~|~~<br>~~|nC|~~<br>~~|~~|~~Ip = 10A~~<br>~~|Vos=44v~~<br>~~Ves=10V,SeeFig.6and13@~~||
|~~Qgs~~<br>~~Qua~~<br>~~ta(on)~~|~~Gate-to-Source Charge~~<br>~~|~~<br>~~Gate-to-Drain("Miller")Charge~~<br>~~|~~<br>~~Turn-OnDelayTime~~<br>~~|~~|~~| —- ~~<br>~~|—-~~<br>~~|—|~~|~~| —-]~~<br>~~|—|~~<br>~~|49|—]|~~|~~—-] 53 |~~<br>~~|—|76|~~<br>~~49|—]|~~|~~| nC |~~<br>~~|~~<br>~~49|—]|~~|~~| Vos = 44v~~<br>~~Ves=10V,SeeFig.6and13@~~<br>~~Vpop=28V~~||
|~~Qua~~<br>~~ta(on)~~<br>~~ts~~<br>~~Rise~~|~~Gate-to-Drain ("Miller") Charge~~<br>~~|~~<br>~~Turn-OnDelayTime~~<br>~~|~~<br>~~RiseTime~~<br>~~SSS*~~|~~| —- ~~<br>~~|—|~~<br>~~SSS*|~~|~~|—|~~<br>~~|49|—]|~~<br>~~84~~|~~|—| 76 |~~<br>~~49|—]|~~<br>~~|—]~~|~~|~~<br>~~49|—]|~~<br>~~—]|~~|~~Ves = 10V, See Fig. 6 and 13 @~~<br>~~Vpop=28V~~<br>~~| =108~~||
|~~ta(on)~~<br>~~ts~~<br>~~Rise~~<br>~~tacofh~~|~~Turn-On Delay Time~~<br>~~|~~<br>~~RiseTime~~<br>~~SSS*~~<br>~~Turn-OffDelayTime~~<br>~~|~~|~~| — |~~<br>~~SSS*|~~<br>~~|—|~~|~~| 49|—]|~~<br>~~84~~<br>~~|19~~|~~49|—]|~~<br>~~|—]~~<br>~~|—|~~|~~49|—]|~~<br>~~—]|~~<br>~~—|~~|~~Vpop = 28V~~<br>~~| =108~~<br>~~Re=24~~||
|~~ts~~<br>~~Rise~~<br>~~tacofh~~<br>~~ty~~|~~RiseTime~~<br>~~SSS*~~<br>~~Turn-OffDelayTime~~<br>~~|~~<br>~~FallTime~~<br>~~|~~|~~SSS* | ~~<br>~~|—|~~<br>~~|-—-|~~|~~84 ~~<br>~~|19~~<br>~~|27~~|~~| —]~~<br>~~|—|~~<br>~~|—|~~|~~—] |~~<br>~~—|~~<br>~~|~~|Ω<br>~~| = 108~~<br>~~Re=24~~<br>~~Rp=26~~<br>~~SeeFig.10@~~||
|~~tacofh~~<br>~~ty~~|~~Turn-Off Delay Time~~<br>~~|~~<br>~~FallTime~~<br>~~|~~|~~| — |~~<br>~~|-—-|~~|~~| 19 ~~<br>~~|27~~|~~| —|~~<br>~~|—|~~|~~—|~~<br>~~|~~|Ω,<br>~~Re = 24~~<br>~~Rp=26~~<br>~~SeeFig.10@~~||
|~~ty~~<br>~~Lp~~|~~Fall Time~~<br>~~|~~<br>~~InternalDrainInductance~~|~~| -—- |~~|~~| 27 ~~<br>~~45~~|~~| — |~~|~~|~~|D<br>~~Rp=26~~<br>~~See Fig. 10 @~~<br>~~Betweenlead,~~||
|~~Lp~~|~~Internal Drain Inductance~~||~~45~~||~~nH~~|~~Between lead,~~<br>~~6mm(0.25in.)~~|)|
|~~L~~<br>s|~~Int~~<br>~~is~~<br>~~Induct~~<br>mremal<br>souresinaucrance||~~7S~~||~~nH~~|G<br>~~6mm~~ ~~(0.25in.)~~<br>from package<br>andcenterofdiecontact|)|
|~~L~~<br>s<br>~~Ciss~~|~~Int~~<br>~~is~~<br>~~Induct~~<br>mremal<br>soures inaucrance<br>~~InputCapacitance~~<br>~~|~~|~~|—-|~~|~~7S~~<br>~~|370|~~|~~370|—|~~|~~|~~|S<br>and center of die contact<br>~~Vos=OV~~||
|~~Ciss~~<br>~~Coss~~|~~InputCapacitance~~<br>~~|~~<br>~~OutputCapacitance~~<br>~~|~~|~~|—-|~~<br>~~|-—-|~~|~~|370|~~<br>~~|~~|~~370|—|~~<br><br>~~—-|~~|~~|~~<br>~~|pF|~~|~~Vos=OV~~<br>~~|Vps=25V~~||
|~~Ciss~~<br>~~Coss~~<br>Crss|~~Input Capacitance~~<br>~~|~~<br>~~OutputCapacitance~~<br>~~|~~<br>ReverseTransferCapacitance<br>||~~| —- |~~<br>~~|-—-|~~<br>|—||~~| 370|~~<br>~~|140|~~<br>|65|—||~~370| — |~~<br>~~140|~~<br>~~—-|~~<br>|—||~~|~~<br>~~|pF|~~<br>|—||~~Vos = OV~~<br>~~|Vps=25V~~<br>f=1.0MHz,SeeFig.5||
|~~Coss~~<br>Crss|~~Output Capacitance~~<br>~~|~~<br>ReverseTransferCapacitance<br>||~~| -—- |~~<br>|—||~~|140|~~<br>|65|—||~~140|~~<br>~~—- |~~<br>|—||~~| pF |~~<br>|—||~~| Vps = 25V~~<br>f=1.0MHz,SeeFig.5||



~~17 MOSFET symbol~~ D ~~A showing the~~ integral reverse G p-n junction diode. S ~~—-|-—-|1.3 | V_ | Ts=25°C, Is=10A, Ves = OV ® —-| 56 | 83 | ns | Ty = 25°C, Ir =10A~~ ——| 120] 180 | nc | di/dt = 100A/ys © ISD ≤ 10A, di/dt ≤ 280A/Us, Vpp ≤ Verypss: ≤ 

@® Pulse width ≤ 300ys; duty cycle ≤ 

Ω 

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100                    VGS TOP           15V ee 100                    VGS TOP           15V oe<br>                   10V pa                    10V St<br>                   8.0V                   7.0V 00 Oe, |                    8.0V                   7.0V a<br>                   6.0V ON                    6.0V el<br>                   5.5V                    5.5V<br>                   5.0V                    5.0V<br> BOTTOM   4.5V  BOTTOM   4.5V<br>| WOee 2 ee ae0|<br>fe CHET || fA<br>10 10 L—-<br>al)|| A fffo [Zemin] nt ey| |ene)Ager)/ A a |<br>Lf — e/a<br>4.5V<br>e/a ee ee | | LY Yo<br>jf. fe | |ep<br> 4.5V<br>Yf | 2 7A ae<br>1  T   = 25°CC A 1  T   = 175°CC<br>YL [|| errs mone V/A eal<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,<br>Ty = 25°C Ty = 175°C<br>100 PppCO pe(COpp 3.0 PPALITTEL<br>2.5<br>ae ——_| P PP<br>T  = 25°CJ<br>re a PTE<br>T  = 175°CJ 2.0<br>aap >—anen PEPE ry<br>10 | | AT] | 1.5 PE pe<br>PLA | | PEPE Aare<br>pf PORE An OPSa<br>o/s>/Aee ee 1.0 PteTee<br>Lyf i ft eT<br>JET to 0.5 eT<br>1 |) | |  V     = 25V cccause20s DS PULSE monsWIDTH A 0.0 PvEEE eto<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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700<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>600 C      = Crss         gd<br>C      = oss        ds         gdC     + C<br>500 s<br>Peo<br>N ON<br>400 ss<br>[So {TT<br>300 SAEH|<br>200 ss<br>Bee) [fT]<br>CO Sooo<br>100<br>HtPre SetPo<br>0<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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20<br>I    = 10AD<br>16 P| |} Tt | Tl RY<br>12 Pf ft | LK<br>SA<br>HE<br>8<br>-<br>4<br>|<br>—<br>4 | ze<br>VelaAe ee     SEE FIGURE 13 el<br>0<br>0 4 8 12 16 20<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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100 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>PP LT BA 4<br>T  = 175°CJ 100<br>AA ee ell<br>T  = 25°CJ<br>10µs<br>10 V / Pasa<br>PEER PRE e eS oP O N|<br>ESE 10 ase S S 100µs<br>on 6 Ses S tt<br>PAP ee ee ae nyTy<br>1ms<br>1 ALA Lt Ep te A 1 po  Single Pulse pee TT NLSAT) E 10ms<br>0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


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20<br>Pet tpt Ves but<br>16 wt a L +-<br>PORN |<br>12 ≤ 1<br>pot PN Pt NN ≤ 0.1 %<br>8 TST IN Fig 10a.nenSwitching Time Test Circuit<br>VDS<br>4 EENSERRE Eee \ 90% |<br>0 A<br>25 Ft 50 | 75 tt 100 125 150 175 !<br>10%<br>T  , Case Temperature (°C)C VGS | |<br>\« >< >| «he<br>td(on) tr td(off) tf<br>I  , Drain Current (Amps)D<br>**----- End of picture text -----**<br>


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10<br>a A OS OS CG<br>a ee<br>D = 0.50<br>1 S P er CCTee ee EeLCi<br>0.20<br>0.10 a o_O<br>ay s ee ee ee<br>0.05<br>0.02 PDM<br>ee 0.01 r Ino<br>0.1<br>Zi a l t Ld<br>      SINGLE PULSE 1<br>(THERMAL RESPONSE) t<br>Pt et a r 2 e<br>a 0DO 1. Duty factor D =  t   / t 1 2 |<br>0.01 Fo<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t   , Rectangular Pulse Duration (sec)1<br>thJC<br>Thermal Response (Z       )<br>**----- End of picture text -----**<br>


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L<br>VDS<br>D.U.T.<br>RG +<br>non. - VDD<br>Tey | IAS<br>a tp 0.01Ω<br>w—|<br>ee<br>12a. Unclamped Inductive Test<br>V(BR)DSS<br>t<br>p<br>— —4<br>VDD<br>/ 7<br>VDS<br>( yp |e<br>/ \\<br>IAS —-—— — — — -<br>**----- End of picture text -----**<br>


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140<br>                    I D<br>NRE<br>TOP            4.2A<br>120                    7.2A<br>ee BOTTOM    10A<br>IN<br>100 F P oN t T R<br>80 ME TN | PE<br>ONE<br>60 NORE  RE<br>PINENEEN EF Ed<br>40 PANN<br>Pt | |] ANYANX EE<br>20<br>pot | NAN<br>Pit et)<br>0  V      = 25V ae... DD POSS ~S<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>Bo QG 12V .2µF : I .3µF<br>bt Fr +<br>QGS QGD D.U.T. -VDS<br>VG VGS<br>a a a (3<br>3mA<br>Charge IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current "| Current di/dt a<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  __ Forward Drop e_<br>® Inductor Curent ee cee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


For N-Channel HEXFET[®] power MOSFETs 

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## Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| gy 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>9ey CO =<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| dar_ 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X aii [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M | 2.92 (.115)<br>2.64 (.104)<br>Ct 2.54 (.100) || T<br>2X<br>NOTES:<br>     1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.<br>**----- End of picture text -----**<br>


- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

**==> picture [316 x 69] intentionally omitted <==**

**----- Start of picture text -----**<br>
E XAMPLE: T HIS  IS  AN IRF1010<br>LOT  CODE 1789<br>AS S EMBLED ON WW 19, 1997 INT ERNAT IONAL PART  NUMBER<br>IN T HE AS S E MBLY LINE "C" RE CT IFIER<br>LOGO<br>Note: position indicates "Lead-Free"  "P" in assembly line DAT E CODE<br>YEAR  7 =  1997<br>AS SE MBLY<br>LOT  CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. International Te@R Rectifier TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/04 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

www.irf.com 

8 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFZ24NPBF/power-mosfet-n-channel-55-v-17-a-007-ohm-to-220ab)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfz24npbf/mosfet-n-55v-17a-to-220/dp/8650160)
---

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