# Power MOSFET, P Channel, 55 V, 22 A, 0.065 ohm, TO-251AA, Through Hole

![Product image](https://novapart.co/image/farnell:8650080/)

**URL**: https://novapart.co/products/IRFU5305PBF/power-mosfet-p-channel-55-v-22-a-0065-ohm-to-251aa
**SKU**: IRFU5305PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2800
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 69W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 22A |
| Drain Source On State Resistance | 0.065ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:8650080/)

PD-95025A 

Ultra Low On-Resistance urface Mount (IRFR5305) Straight Lead (IRFU5305) dvanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free 

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IRFR5305PbF<br>IRFU5305PbF<br>HEXFET [®]  Power MOSFET<br>D<br>VDSS = -55V<br>R  = 0.065Ω<br>DS(on)<br>G<br>ID = -31A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET[®] Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 

The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

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   D-Pak  I-Pak<br>IRFR5305            IRFU5305<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~i~~|**Absolute Maximum Ratings**||||
|---|---|---|---|---|
|~~i~~<br>~~a——~~<br>~~>~~|**Parameter**<br>~~es~~<br>~~>~~|**Max.**<br>~~es~~||**Units**<br>~~es~~<br>~~al~~|
|ID@ TC= 25 C<br>~~i~~<br>~~a——~~<br>~~>~~|Continuous Drain Current, VGS@ -10V<br>~~es~~<br>~~>~~|-31<br>~~es~~||A<br>~~es~~<br>~~al~~|
|ID@ TC= 100 C<br>~~a——~~<br>~~>~~|Continuous Drain Current, VGS@ -10V<br>~~es~~<br>~~>~~<br>~~ir~~|-22<br>~~es~~|||
|IDM<br>~~——~~<br>~~>~~|Pulsed Drain Current<br>~~es~~<br>~~>~~<br>~~ir~~|-110<br>~~es~~|||
|PD@TC= 25 C<br>~~——~~<br>~~>~~<br>~~eo~~|Power Dissipation<br>~~es~~<br>~~>~~<br>~~ir~~<br>~~eo~~|110<br>~~es~~<br>~~eo~~||W<br>~~es~~<br>~~al~~<br>~~eo~~|
|~~Soe~~|Linear DeratingFactor<br>~~Soe~~|0.71<br>~~Soe~~||W C<br>~~Soe~~|
|VGS<br>~~oes~~|Gate-to-Source Voltage<br>~~oes~~|± 20<br>~~oes~~||V<br>~~oes~~|
|EAS<br>~~a~~|Single Pulse Avalanche Energy<br>~~a~~|280<br>~~a~~||mJ<br>~~a~~|
|IAR<br>~~a~~|Avalanche Curren<br>~~a~~|-16<br>~~a~~||A<br>~~a~~|
|EAR<br>~~a~~|Repetitive Avalanche Energy<br>~~a~~|11<br>~~a~~||mJ<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|-5.0<br>~~a~~||V/ns<br>~~a~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175||°C<br>~~a~~|
|~~a~~|SolderingTemperature, for 10 seconds<br>~~a~~|300(1.6mm from case)<br>~~a~~|||
|~~eos~~|Mounting torque, 6-32 or M3 srew<br>~~eos~~|10 lbf•in (1.1N•m)<br>~~eos~~||~~eos~~|
|**Thermal Resistance**|||||
|~~ee~~|**Parameter**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|
|RθJC<br>~~ee~~|Junction-to-Case<br>~~ee~~|–––<br>~~ee~~|1.4<br>~~ee~~|C/W<br>~~ee~~|
|RθJA<br>a|Junction-to-Ambient (PCB mount)*|–––|50||
|RθJA|Junction-to-Ambient**|–––|110||



## IRFR/U5305PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>oT<br>~~ns~~|**Min.**<br>oT|**Typ. **<br>oT|**Max.**<br>oT|**Units**<br>oT|**Conditions**<br>~~r~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ns~~|-55|–––|–––|V|VGS= 0V, ID= -250 A<br>~~r~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ns~~<br>~~a~~<br>~~es~~|–––<br>~~a~~|-0.034|–––|V C|Reference to 25 C, ID= -1mA<br>~~r~~<br>:<br>~~®~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~<br>~~ee~~|–––|–––|0.065|Ω|VGS= -10V, ID= -16A<br>~~®~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~ee~~<br>~~es~~|-2.0|–––|-4.0|V|VDS= VGS, ID= -250 A<br>~~®~~<br>~~©~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~es~~|8.0|–––|–––|S|VDS= -25V, ID= -16A<br>~~©~~|
|~~less~~|~~es~~<br>~~**e**e~~|–––|–––|-25|µA|VDS= -55V, VGS= 0V<br>~~©~~|
|||–––<br>|–––<br>|-250<br>||VDS= -44V, VGS= 0V, TJ= 150 C|
|~~less~~|Gate-to-Source Forward Leakage<br>~~**e**e~~|–––<br>|–––<br>|100<br>|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage<br>~~**e**es~~|–––<br>~~s~~|–––<br>~~s~~|-100<br>~~s~~||VGS= -20V|
|Qg<br>~~less ~~<br>~~es~~|Total Gate Charge<br> ~~**e**e~~<br>~~es~~<br>|–––<br><br>~~es~~|–––<br><br>~~es~~|63<br><br>~~es~~|nC|ID= -16A<br>VDS= -44V<br>VGS= -10V, See Fig. 6 and 13<br>~~oo~~|
|Qgs<br>~~eses~~|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|13<br>~~es~~|||
|Qgd<br>~~eses~~|Gate-to-Drain("Miller")Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|29<br>~~es~~|||
|td(on)<br>~~es~~<br>eg|Turn-On Delay Time<br>~~es~~|–––|14|–––|ns|VDD= -28V<br>ID= -16A<br>RG= 6.8Ω<br>RD= 1.6Ω,See Fig. 10<br>~~oo~~<br>0°|
|tr<br>~~es~~<br>eg<br>ee|Rise Time<br>~~es~~<br>|–––<br>|66<br>|–––<br>|||
|td(off)<br>eg<br>ee|Turn-Off Delay Time<br>|–––<br>|39<br>|–––<br>|||
|tf<br>ee~~a~~|Fall Time<br>~~a~~|–––<br>~~a~~|63<br>~~a~~|–––<br>~~a~~|||
|LD<br>~~a~~|Internal Drain Inductance<br>~~a~~|–––<br>~~a~~|4.5<br>~~a~~|–––<br>~~a~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>0°|
|LS<br>~~a~~<br>~~a~~<br>~~es~~|Internal Source Inductance<br>~~a~~<br>~~a~~<br>|–––<br>~~a~~<br>|~~a~~<br>|–––<br>~~a~~<br>|nH||
|Ciss<br>~~a~~<br>~~es~~|Input Capacitance<br>~~a~~<br>|–––<br>|1200<br>|–––<br>|pF|VGS= 0V<br>VDS= -25V<br>ƒ = 1.0MHz, See Fig. 5<br>~~:~~|
|Coss<br>~~a~~<br>~~es~~<br>es|Output Capacitance<br>~~a~~<br>~~en~~|–––<br>~~en~~|520<br>~~en~~|–––<br>~~en~~|||
|Crss<br>~~a~~<br>~~es~~<br>es|Reverse Transfer Capacitance<br>~~a~~<br>~~en~~|–––<br>~~en~~|250<br>~~en~~|–––<br>~~en~~|||
|**Source-Drain Ratings and Characteristics**<br>~~en~~<br>es<br>~~:~~|||||||
||**arameter**<br>ee|**Min.**<br>ee<br>ee|**Typ. **<br>ee<br>~~ee~~|**Max.**<br>ee<br>~~ee~~|**Units**|**Conditions**|
|IS<br>~~—~~|Continuous Source Current<br>(Body Diode)<br>~~ee~~<br>~~TCU~~|–––<br>~~ee~~<br>ee<br>~~TCU~~|–––<br>~~ee~~<br>~~ee~~<br>~~TCU~~|~~ee~~<br>~~ee~~<br>~~TCU~~||MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunction diode.<br>S<br>D<br>G<br>~~:~~|
|ISM<br>~~—~~|Pulsed Source Current<br>(BodyDiode)<br>~~TCU~~|ee <br>~~TCU~~|~~ee~~<br>~~TCU~~|-110<br>~~ee~~<br>~~TCU~~|||
|VSD<br>~~—~~|Diode Forward Voltage<br>~~TCU~~|–––<br>~~TCU~~|–––<br>~~TCU~~|-1.3<br>~~TCU~~|V|TJ= 25°C, IS= -16A, VGS= 0V<br>~~:~~|
|trr<br>~~—~~<br>~~es~~|Reverse Recovery Time<br>~~TCU~~<br>~~ee~~|–––<br>~~TCU~~<br>~~ee~~|71<br>~~TCU~~<br>~~ee~~|110<br>~~TCU~~<br>~~ee~~|ns<br>~~ee~~|TJ= 25°C, IF= -16A<br>di/dt = -100A/µs<br>~~:~~<br>©®|
|Qrr<br>~~es~~|Reverse RecoveryCharge<br>~~ee~~|–––<br>~~ee~~|170<br>~~ee~~|250<br>~~ee~~|nC<br>~~ee~~||



- @ VDD = -25V, starting TJ = 25[°] C, L = 2.1mH lead and center of die contact. 

- RG = 25Ω , IAS = -16A. (See Figure 12) 

Uses IRF5305 data and test conditions. 

- ISD ≤ -16A, di/dt ≤ -280A/ s, VDD ≤ V(BR)DSS, 

- TJ ≤ 175 C 

- When mounted on 1" square PCB (FR-4 or G-10 Material). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

- ** Uses typical socket mount. 

www.irf.com 

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## IRFR/U5305PbF 

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1000<br>                   VGS<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V Ty TT<br>                  - 7.0V |<br>                  - 6.0V<br>                  - 5.5V<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>100<br>ee es |<br>a<br>be |<br>10 | fe<br> -4.5V<br>CLL a |<br>Uf 1 ev<br> 20µs PULSE WIDTH<br>1 AA  T  = 25°C<br>0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>                   VGS<br> TOP          - 15V<br>                  - 10V<br>                  - 8.0V ee<br>                  - 7.0V A |<br>                  - 6.0V<br>                  - 5.5V<br>                  - 5.0V<br> BOTTOM  - 4.5V<br>100<br>a a Aea<br>a 77 an<br>ge<br>10 |OG<br>| [fAGi —— -4.5V<br>7 A<br> 20µs PULSE WIDTH<br>1 YWfy |  T  = 175°C<br>0.1 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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100 2.0<br>SSSa eeSS SSee ee eeSS I    = -27AD<br>ee ee eee ee eee Fe<br>T  = 25°CJ<br>PtP| eA T  = 175°CJ 1.5 PEELEELE EAA<br>A a |<br>aaEDa an a<br>10 PIAL tL tt 1.0 PLE CEE LET<br>a / A ee ee ee ee ee ee eee<br>| YW | 7 | fy | fT ft ft LT |<br>| ff | | tf | ft oy yp ft Pua<br>0.5<br>(scene Geena<br> V     = -25VDS<br>1  20µs PULSE WIDTH A 0.0  V      = -10VGS<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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2500<br>V      = 0V,         f = 1MHzGS<br>C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>C      = Crss         gd<br>2000 al C      = C     + Coss        ds         gd<br>Ciss<br>NE |<br>Coss<br>1500<br>PSSSTTSSCo<br>1000 aS<br>Crss<br>500 RoE: [SR] ll<br>SUN<br>ESTCCI CATT<br>0<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

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1000<br>ee ee<br>ee ee ee<br>100<br>T  = 175°CJ<br>SS S o<br>T  = 25°CJ<br>10 PALE[ LI V      = 0VGS<br>0.4 0.8 1.2 1.6 2.0<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


- **Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>I    = -16AD<br>V      = -44VDS<br>V      = -28VDS<br>16 Pp Pot te pe Son<br>12<br>SaeeGeeneyZe<br>8 Seen enns 408<br>Sanne oenee<br>4 Eaneeny/dnen<br>Pee<br> FOR TEST CIRCUIT<br>7pJott     SEE FIGURE 13<br>0<br>0 10 20 30 40 50 60<br>Q   , Total Gate Charge (nC)G<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>ee ee ee<br>100<br>ee el<br>100µs<br>10<br>ee I S S 1ms<br>T     = 25°CC 10ms<br>T     = 175°CJ<br>1 L  Single Pulse e eT<br>1 10 100<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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## IRFR/U5305PbF 

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RD<br>VDS<br>35 a VGS<br>30 PEEP yey RG D.U.T.<br>-<br>a owl. + VDD<br>25 TT KEE EEE EE<br>-10V<br>PEE<br>Pulse Width ≤ 1  s<br>20 PEPE EERE ELL] Duty Factor ≤ 0.1 % '<br>FFPEPeLEeEN LLL :<br>ee<br>15 FF PELE eLeEN Ll Fig 10a.   Switching Time Test Circuit<br>10 PPP PN<br>td(on) tr td(off) tf<br>FT EPEeeeeee rN VGS oo. _.<br>5 PFEreeeeEeEeL|EL Lin 10% anV7<br>0<br>25 50 75 100 125 150 175<br>a T   , Case TemperatureC (  C)° 90% X ,<br>VDS LL<br>Fig 9.   Maximum Drain Current Vs. Fig 10b.   Switching Time Waveforms<br>Case Temperature<br> 10<br>Pt—CSS‘“(‘<$ESSS:(C‘$ENSP§$ STs |<br>PT<br>Hf} ef te fF tt tt<br> 1 PelH<br>e D = 0.50 e<br>a ee ee ee<br>0.20 ——$—$—— eo<br>0.10<br>eS eteel PDM<br>0.1 0.05 eesoe<br>t1<br>0.02 SINGLE PULSE<br>0.01 (THERMAL RESPONSE) t2<br>=2aSS e Peee Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>D<br>-I   , Drain Current (A)<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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VDS L<br>RG D.U.T il VDD<br>IAS<br>Fate -20V Nv 7 DRIVER<br>tp 0.01Ω<br>15V<br>-<br>+<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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IAS<br>No]<br>\ |<br>\<br>¢— tp<br>V(BR)DSS<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>-10V<br>QGS QGD<br>VG<br>van<br>Charge<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Basic Gate Charge Waveform 

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700<br>                    ID<br>600 NeeP| tf | ft TOP            -6.6A                   -11A<br>BOTTOM    -16A<br>PN [ft]<br>PNET<br>500 PIN | ffet<br>ae Neegt tt<br>400 WAVE<br>300 INE NONNEKE<br>200 P PTARKIN NIN EAE<br>100 P| | AAW A<br>Pty TT IOS A<br> V      = -25V eee DD<br>0<br>25 50 75 100 125 150 175<br>ee ee<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>D.U.T. +-VDS<br>VGS<br>-3mA<br>is |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFR/U5305PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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+ Circuit Layout Considerations<br>   • Low Stray Inductance<br>•  Ground Plane<br>•  Low Leakage Inductance<br>D.U.T(faa) «       Current Transformer<br>| | -<br>+<br>- - +<br>Hw.<br>00<br>RK<br>O<br>Re •  dv/dt controlled by RG +<br>•  ISD controlled by Duty Factor "D" - VDD<br>VGS* •  D.U.T. - Device Under Test<br>*  Reverse Polarity for P-Channel<br>**----- End of picture text -----**<br>


- ** Use P-Channel Driver for P-Channel Measurements 

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O) Driver Gate Drive<br>P.W.<br>Period D =<br> —— P.W. + Period _<br>t<br>[<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ® Current =, =<br>i di/dt /<br>® D.U.T. VDS Waveform Diode Recoverydv/dt \<br>/[,<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ]<br>**----- End of picture text -----**<br>


- *** VGS = 5.0V for Logic Level and 3V Drive Devices 

**Fig 14.** For P-Channel HEXFETS 

www.irf.com 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>oe | LINE A<br>Note: "P" in assembly line position ASSEMBLY aa<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR Poiss P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY al WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO a 56IRFU120919A78 DATE CODEYEAR 9 =  1999WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>PART NUMBER<br>INTERNATIONAL gS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNAT ES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>OOOO OO t oo Oo oO :<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| x<br>16 mm S|<br>NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFU5305PBF/power-mosfet-p-channel-55-v-22-a-0065-ohm-to-251aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfu5305pbf/mosfet-p-55v-28a-i-pak/dp/8650080)
---

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