# Power MOSFET, N Channel, 55 V, 30 A, 0.0245 ohm, TO-251AA, Through Hole

![Product image](https://novapart.co/image/farnell:1013406/)

**URL**: https://novapart.co/products/IRFU4105ZPBF/power-mosfet-n-channel-55-v-30-a-00245-ohm-to
**SKU**: IRFU4105ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4160
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 48W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 48W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0245ohm |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.0245ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1013406/)

PD - 95374B 

## IRFR4105ZPbF IRFU4105ZPbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 55V<br>R  = 24.5m Ω<br>DS(on)<br>G<br>ID = 30A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in  a wide variety of applications. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~ne~~|30<br>~~ne~~|A<br>~~ne~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~ne~~|21<br>~~ne~~||
|IDM|Pulsed Drain Current<br>~~ne~~<br>~~a~~|120<br>~~ne~~<br>~~a~~||
|PD@TC= 25°C|Power Dissipation<br>~~ne~~<br>~~a~~<br>~~LO~~|48<br>~~ne~~<br>~~a~~<br>~~LO~~|W<br>~~ne~~<br>~~LO~~|
||Linear Derating Factor<br>~~a~~|0.32<br>~~a~~|W/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage|± 20|V|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|29|mJ<br>~~a~~|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value<br>~~a~~|46<br>~~a~~||
|IAR|Avalanche Current<br>~~a~~|See Fig.12a, 12b, 15, 16<br>~~a~~<br>~~po~~|A<br>~~a~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~po~~||mJ<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case )<br>~~po~~||
|~~po~~|Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~i~~|10 lbf in (1.1N m)<br>~~po~~<br>~~i~~|~~po~~<br>~~i~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~Gs~~|**Typ.**<br>~~es~~|**Max. **<br>~~sd~~|**Units**<br>~~sd~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ee~~|55<br>~~ee~~<br>~~Gs~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ed~~|–––<br>~~ee~~<br>~~sd~~|V<br>~~ee~~<br>~~sd~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~Gs~~<br>~~es~~<br>~~es~~<br>~~Gs~~|0.053<br>~~ee~~<br>~~es ~~<br>~~es~~<br>~~ed~~<br>~~Os~~|–––<br>~~ee~~<br> ~~sd~~<br>~~es~~|V/°C<br>~~ee~~<br>~~sd~~<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~ee~~<br>~~es~~<br>~~©~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~Gs~~<br>~~Gs~~|19<br> ~~ed~~<br>~~ee~~<br>~~Os~~<br>~~es~~|24.5<br>~~ee~~<br>~~Gs~~|mΩ<br>~~ee~~|VGS= 10V, ID= 18A<br>~~ee~~<br>~~©~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~<br>~~ee~~|2.0<br>~~ee~~<br>~~Gs ~~<br>~~ee~~<br>~~Gs~~<br>~~es~~|–––<br>~~ee~~<br> ~~Os~~<br>~~ee~~<br>~~es~~<br>~~ed~~|4.0<br>~~ee~~<br>~~ee~~<br>~~Gs~~|V<br>~~ee~~<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~<br>~~©~~<br>~~ee~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~es~~|16<br>~~ee~~<br>~~Gs ~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br> ~~es ~~<br>~~es~~<br>~~ed~~|–––<br>~~ee~~<br> ~~Gs~~<br>~~es~~|S<br>~~ee~~<br>~~es~~|VDS= 15V, ID= 18A<br>~~ee~~<br>~~es~~|
|IDSS<br>~~Ce~~|Drain-to-Source Leakage Current<br>~~SO~~<br>~~Ce~~|–––<br>~~es ~~<br>~~SO~~|–––<br> ~~ed~~<br>~~SO~~|20<br>~~SO~~|µA<br>~~SO~~|VDS= 55V, VGS= 0V<br>~~SO~~|
|||–––<br>~~SO~~<br>~~FT|~~|–––<br>~~SO~~<br>~~FT|~~|250<br>~~SO~~<br>~~FT|~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~SO~~|
|IGSS<br>~~Ce~~|Gate-to-Source Forward Leakage<br>~~SO~~<br>~~Ce~~|–––<br>~~SO~~<br>~~FT|~~|–––<br>~~SO~~<br>~~FT|~~|200<br>~~SO~~<br>~~FT|~~|nA<br>~~SO~~|VGS= 20V<br>~~SO~~|
||Gate-to-Source Reverse Leakage<br>~~Ce~~|–––<br>~~FT|~~<br>~~ee~~|–––<br>~~FT|~~<br>~~es~~|-200<br>~~FT|~~||VGS= -20V|
|Qg<br>~~Ce~~|Total Gate Charge<br>~~Ce~~<br>~~es~~<br>~~ee~~|–––<br>~~FT|~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|18<br>~~FT|~~<br>~~es~~<br>~~es~~<br>~~ee~~|27<br>~~FT|~~<br>~~es~~|nC|ID= 18A<br>VDS= 44V<br>VGS= 10V<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~**ee**~~|5.3<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|7.0<br>~~ee~~<br>~~es~~<br>~~es~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~es~~|–––<br>~~**ee** ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|10<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|ns|VGS= 10V<br>VDD= 28V<br>ID= 18A<br>RG= 24.5Ω<br>~~©~~|
|tr|Rise Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|40<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~|26<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~|24<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~H+~~|–––<br>~~es~~<br>~~H+~~|4.5<br>~~es~~<br>|–––<br>~~es~~<br>~~4~~|nH<br>||Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
|LS|Internal Source Inductance<br>~~es~~<br>~~H+~~|–––<br>~~es~~<br>~~H+ ~~<br>~~ee~~|7.5<br>~~es~~<br> <br>~~ee~~|–––<br>~~es~~<br> ~~4~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|740<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|140<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|74<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|450<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~**ee**~~|110<br> ~~ee~~<br>~~es~~<br>~~**ee**~~|–––<br>~~es~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~**ee**~~|180<br>~~**ee**~~|–––||VGS= 0V, VDS= 0V to 44V<br>~~@~~|



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1000<br>ror isv H+<br>soy a eeHH ee Ht|<br>100<br>rove Lome UELLL<br>ey =: ee<br>Bottom 4svee——e tT] | TI<br>10 A e ee<br>1<br>a y 4.5V i i<br>60µs PULSE WIDTH<br>0.1 PEE SS SS Tj = 25°C ee mail<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>EePP eTes eeTdee eeyt<br>100 | | | TT<br>— T — = 175°C = —————<br>J<br>a >_< ss—<br>10<br>ey 2 es es es es eee<br>TJ = 25°C<br>1 | fi | |<br>e e<br>VDS = 25V<br>0 | tT LT 60µs PULSE WIDTH<br>4 5 6 7 8 9 10<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>Top asv  aHF| ee<br>7.0V | HET<br>100 oy ==> Tee<br>Bottom 4.5v -t}-—pgeerr——ey<br>PETA<br>10<br>Sg get ee 4.5V |<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1 Sia Atlin eTT| |<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>30<br>TJ = 175°C<br>25 | | =—_—«—<..<br>V<br>20 /<br>|<br>15 TJ = 25°C<br>10<br>5<br>VDS = 8.0V<br>380µs PULSE WIDTH<br>0<br>0 10 20 30 40<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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1200 20<br>VGS   = 0V,       f = 1 MHZ ID= 18A<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>1000 T— CCrss  oss   = C= Cds gd + Cgd ] 16 es VVDS= 28VVDS= 11VDS= 44V e<br>800<br>Ciss<br>12<br>600<br>/)<br>8<br>400 | i Ah<br>Coss 4<br>200<br>FOR TEST CIRCUIT<br>Se y ZE EE<br>Crss SEE FIGURE 13<br>SS S} 0<br>0<br>1 10 100 0 5 10 15 20 25 30<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>TJ = 175°C<br>10.0 10<br>100µsec<br>1.0 es ee ee TJ = 25°C ee 1 T r SPRITE<br>1msec<br>Tc = 25°C<br>VGS = 0V Tj = 175°C 10msec<br>Single Pulse<br>0.1 ee Ae 0.1 et<br>0.0 0.5 1.0 1.5 2.0 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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30 2.5<br>ID = 18A<br>25 VGS = 10V<br>S O F E<br>2.0<br>20<br>P NET p epe<br>15 1.5<br>H EN HEHE<br>10<br>1.0<br>C reer) HEHEHE<br>5<br>) DER<br>0 0.5<br>S a e e ae<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>D = 0.50<br>1<br>0.20<br>0.10<br>0.05<br>0.1 0.020.01 τ J τ J R1 R1 R2 R2 R3R3 τ C τ Ri (°C/W)   1.100       0.000174  τ i (sec)<br>= ee τ 1 τ 1 τ 2 τ 2 Se τ 3 τ 3 1.601       0.000552<br>0.01 Ci=  τ i / Ri 0.418       0.007193<br>SINGLE PULSE Ci i / Ri<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 ee ee eee<br>1E-006 1E-005 0.0001 0.001 0.01<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>f<br>20VVGS<br>tp 0.01 Ω<br>P ly<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS QGD<br>VG<br>Charge<br>=<br>**----- End of picture text -----**<br>


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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>+<br>The D.U.T. | -VDS<br>VGS<br>ing<br>3mA<br>ae IG | ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

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120<br>                 I<br>D<br>TOP         2.0A<br>100<br>               3.5A<br>BOTTOM   18A<br>80 a a a<br>N CE<br>60<br>P EE<br>40 N EN Eb<br>20 T ESN<br>0 || |SN.<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.5<br>4.0<br>T EE<br>3.5<br>P SL<br>ID = 250µA<br>3.0<br>2.5<br>L LL ENGL<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>SUE EEE ERS<br>TJ , Temperature ( °C )<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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100<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>10 0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>0.05<br>case should Tj be allowed to<br>0.10 exceed Tjmax<br>1<br>|<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>30 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>25 ID = 18A   Purely a thermal phenomenon and failure occurs at a<br>y t     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>20 E NNose 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>15 I NNES<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>10 C L LINNGTE     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>5 L T ANN 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>L TE ENN     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL cS<br>OR RECTIFIER IRFR120 DATE CODEP =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE e a t PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

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1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/datasheets/data/<br>auirfr4105z.pdf<br>2. For the most current drawing please refer to IR website at http://www.irf.com/package/<br>www.irf.com 9<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR aT<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR P1194) P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/datasheets/data/ auirfr4105z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 www.irf.com 

**==> picture [281 x 242] intentionally omitted <==**

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TR TRR TRL<br>eeooooo\ | oeoo/J<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CeCe, OI) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Coss eff. is a fixed capacitance that gives the same charging time 

Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

as Coss while VDS is rising from 0 to 80% VDSS . 

- @ Limited by TJmax, starting TJ = 25°C, L = 0.18mH ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 18A, VGS =10V. Part not avalanche performance. 

   - ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

recommended for use above this value. 

- © This value determined from sample failure population. 100% tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

11 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfu4105zpbf/mosfet-n-i-pak/dp/1013406)
---

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