# Power MOSFET, N Channel, 75 V, 53 A, 0.0128 ohm, TO-251AA, Through Hole

![Product image](https://novapart.co/image/farnell:1688593/)

**URL**: https://novapart.co/products/IRFU2307ZPBF/power-mosfet-n-channel-75-v-53-a-00128-ohm-to
**SKU**: IRFU2307ZPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3680
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 110W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 110W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0128ohm |
| Transistor Case Style | TO-251AA |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 53A |
| Drain Source On State Resistance | 0.0128ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1688593/)

PD - 96191B 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## IRFR2307ZPbF IRFU2307ZPbF 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 75V<br>R  = 16m Ω<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


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D-Pak I-Pak<br>IRFR2307ZPbF IRFU2307ZPbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**<br>~~PO~~<br>~~rr~~|**Absolute Maximum Ratings**<br>**Parameter**<br>~~PO~~<br>~~rr~~|**Max.**<br>~~nn~~|**Units**<br>~~nn~~|
|---|---|---|---|
|ID @TC= 25°C<br>~~PO~~<br>~~rr~~|Continuous Drain Current,VGS@ 10V(Silicon Limited)<br>~~PO~~<br>~~rr~~|53<br>~~nn~~|A<br>~~nn~~|
|ID @TC= 100°C <br>~~PO~~<br>~~rr~~|Continuous Drain Current,VGS@ 10V<br>~~PO~~<br>~~rr~~|38<br>~~nn~~||
|ID @TC= 25°C<br>~~rr~~<br>~~©~~|Continuous Drain Current,VGS@ 10V(Package Limited)<br>~~rr~~<br>~~Pf~~<br>~~©~~|42<br>~~nn~~<br>~~Pf~~||
|IDM<br>~~rr~~<br>~~©~~|Pulsed Drain Current<br>~~rr~~<br>~~©~~|210<br>~~nn~~<br>~~Q~~||
|PD @TC= 25°C<br>~~rr~~<br>~~©~~|Power Dissipation<br>~~rr~~<br>~~©~~<br>~~a~~|110<br>~~nn~~<br>~~a~~<br>~~Q~~<br>~~G~~|W<br>~~nn~~<br>~~a~~|
||Linear DeratingFactor<br>~~a~~|0.70<br>~~Q~~<br>~~a~~<br>~~G~~|W/°C<br>~~a~~|
|VGS<br>~~a~~|Gate-to-Source Voltage<br>~~pf~~<br>~~a~~|± 20<br>~~G~~<br>~~pf~~|V<br>~~pf~~|
|EAS (Thermallylimited) <br>~~a~~|Single Pulse Avalanche Energy<br>~~pf~~<br>~~a~~<br>~~G~~<br>~~ee~~|100<br>~~pf~~<br>~~G~~<br>~~ee~~|mJ<br>~~pf~~<br>~~ee~~|
|EAS (Tested)<br>~~a~~<br>~~a~~<br>~~Ce~~|Single Pulse Avalanche EnergyTested Value<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~Ce ae~~|140<br>~~ee~~<br>~~a~~||
|IAR<br>~~a~~<br>~~Ce~~|Avalanche Current<br>~~ee~~<br>~~a~~<br>~~Ce ae~~|See Fig.12a, 12b, 15, 16<br>~~ee~~<br>~~a~~|A<br>~~ee~~|
|EAR<br>~~a~~<br>~~Ce~~|Repetitive Avalanche Energy<br>~~a~~<br>~~Ce ae~~||mJ|
|TJ<br>TSTG<br>~~Ce~~|Operating Junction and<br>Storage Temperature Range<br>~~Ce ae~~<br>~~po~~|-55  to + 175<br>~~a~~<br>~~po~~|°C<br>~~po~~|
||SolderingTemperature,for 10 seconds<br>~~po~~|300(1.6mm from case)<br>~~po~~||



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~GD~~|**Typ.**<br>~~GD~~|**Max. **<br>~~I~~|**Units**<br>~~GD~~|**Conditions**<br>~~GO~~|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~Ps~~|75<br>~~Ps~~<br>~~GD~~<br>~~rs~~|–––<br>~~Ps~~<br>~~GD~~<br>~~GO~~|–––<br>~~Ps~~<br>~~I~~<br>~~GO~~|V<br>~~Ps~~<br>~~GD~~|VGS= 0V,ID= 250µA<br>~~Ps~~<br>~~GO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~rs~~|–––<br>~~GD~~<br>~~rs~~<br>~~rs~~<br>~~GD~~|0.072<br>~~GD ~~<br>~~rs~~<br>~~GO~~<br>~~GD~~|–––<br> ~~I ~~<br>~~rs~~<br>~~GO~~<br>~~I~~|V/°C<br> ~~GD~~<br>~~rs~~<br>~~(~~|Reference to 25°C,ID= 1mA<br>~~GO~~<br>~~rs~~<br>~~~~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~rs~~<br>~~es~~|–––<br>~~rs~~<br>~~rs ~~<br>~~es~~<br>~~GD~~<br>~~Gs~~|12.8<br>~~rs~~<br> ~~GO~~<br>~~es~~<br>~~GD~~<br>~~Oe~~|16<br>~~rs~~<br>~~GO~~<br>~~es~~<br>~~I~~<br>|mΩ<br>~~rs~~<br>~~es~~<br>~~(~~<br>~~CO~~|VGS= 10V,ID= 32A<br>~~rs~~<br>~~es~~<br>~~~~~<br>~~CO~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~|2.0<br>~~GD~~<br>~~ee~~<br>~~Gs~~<br>~~OD~~|–––<br>~~GD ~~<br>~~ee~~<br>~~Oe~~<br>~~OD~~|4.0<br> ~~I ~~<br>~~ee~~<br><br>~~GD~~|V<br> ~~(~~<br>~~ee~~<br>~~CO~~<br>~~GD~~|VDS= VGS,ID= 100µA<br>~~~~~<br>~~ee~~<br>~~CO~~<br>~~GOO~~|
|gfs|Forward Transconductance<br>~~ey~~|30<br>~~Gs ~~<br>~~ey~~<br>~~OD~~|–––<br> ~~Oe ~~<br>~~ey~~<br>~~OD~~|–––<br> <br>~~ey~~<br>~~GD~~|S<br> ~~CO~~<br>~~ey~~<br>~~GD~~|VDS= 25V,ID= 32A<br>~~CO~~<br>~~ey~~<br>~~GOO~~|
|IDSS|Drain-to-Source Leakage Current<br>~~EE~~|–––<br>~~OD~~<br>~~EE~~|–––<br>~~OD ~~<br>~~EE~~|25<br> ~~GD~~<br>~~EE~~|µA<br>~~GD~~<br>~~EE~~|VDS= 75V,VGS= 0V<br>~~GOO~~<br>~~EE~~|
|||–––<br>~~EE~~<br>~~ee~~|–––<br>~~EE~~<br>~~ee~~|250<br>~~EE~~||VDS= 75V,VGS= 0V,TJ= 125°C<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~a~~<br>~~**|**~~|–––<br>~~EE~~<br>~~a~~<br>~~ee~~<br>~~**|**~~|–––<br>~~EE~~<br>~~a~~<br>~~ee~~|200<br>~~EE~~<br>~~a~~|nA<br>~~EE~~<br>~~a~~|VGS= 20V<br>~~EE~~<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~**|**~~|–––<br>~~a~~<br>~~ee~~<br>~~**|**~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~|-200<br>~~a~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~**|**~~<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~**|**~~<br>~~es~~<br>~~ee~~<br>~~**e**e~~|50<br>~~ee~~<br>~~es~~<br>~~**e**s~~|75<br>~~es~~|nC|VGS= 10V<br>VDS= 60V<br>ID= 32A<br>~~@~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~<br>~~es~~<br>~~**e**e~~<br>~~s~~|14<br>~~es~~<br>~~**e**s~~<br>~~e~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~**e**e~~<br>~~s~~<br>~~ee~~|19<br>~~**e**s~~<br>~~e~~<br>~~es~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~es~~|–––<br>~~**e**e ~~<br>~~s~~<br>~~es~~<br>~~ee~~<br>~~ee~~|16<br> ~~**e**s~~<br>~~e~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|ns<br>~~ee~~|VDD= 38V<br>ID= 32A<br>RG= 10Ω<br>VGS= 10V<br>~~@~~<br>~~ee~~<br>)|
|tr|Rise Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|65<br> ~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~|44<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~|29<br> ~~es~~<br>~~ee~~|–––<br>~~ee~~|||
|LD|Internal Drain Inductance<br>~~ee~~<br>~~FF~~|–––<br>~~ee~~<br>~~FF~~|4.5<br>~~ee~~<br>~~FF~~|–––<br>~~ee~~<br>~~FF~~|nH<br>~~ee~~<br>~~FF~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~ee~~<br>)<br>~~&~~|
|LS|Internal Source Inductance<br>~~ee~~<br>~~FF~~|–––<br>~~ee~~<br>~~FF~~<br>~~ee~~|7.5<br>~~ee~~<br>~~FF~~<br>~~es~~|–––<br>~~ee~~<br>~~FF~~|||
|Ciss|Input Capacitance<br>~~FF~~<br>~~es~~|–––<br>~~FF~~<br>~~es~~<br>~~ee~~<br>~~ee~~|2190<br>~~FF~~<br>~~es~~<br>~~es~~|–––<br>~~FF~~<br>~~es~~|pF<br>~~FF~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz<br>~~&~~|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|280<br> ~~es~~<br>~~es~~<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|150<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>|1070<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~<br>|–––<br>~~es~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~es~~|190<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~||VGS= 0V,VDS= 60V, ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~es~~|400<br>~~es~~<br>~~ee~~|–––||VGS= 0V,VDS= 0V to 60V<br>~~@~~|



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>100 6.0V = 6.0V EN<br>5.5V 5.5V<br>5.0V 100 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>10 A g e<br>10 4.5V<br>aaiieeasiieemariiil | ff i e<br>1 | Bo o<br>4.5V<br>PTT ≤ 60µs PULSE WIDTH 4 ≤ 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>PT Toil PPM PL<br>0.1 1<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 80<br>TJ = 25°C<br>100 es 60 LO<br>T = 175°C<br>J<br>a ey 2 ee ee ee<br>TJ = 175°C<br>10 40<br>pf ff | L y<br>T = 25°C<br>J<br>1 20<br>VDS = 20V VDS = 10V<br>≤ 60µs PULSE WIDTH 380µs PULSE WIDTH<br>i<br>0.1 0<br>2 4 6 8 10 0 10 20 30 40 50 60 70<br>VGS, Gate-to-Source Voltage (V) ID,Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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4000 20<br>VGS   = 0V,       f = 1 MHZ ID= 32A<br>Ciss   = Cgs + Cgd,  Cds SHORTED a a ee ee<br>CCrss   = C= Cgd + C 16 pe VVDS= 38VDS= 60V |<br>3000 oss   ds  gd VDS= 15V<br>C 12 a<br>iss<br>2 | | ND<br>2000 Py or ++ een Ae<br>8<br>ic) a ae<br>1000 4<br>Coss = Ge<br>Crss<br>0<br>0 =" 0 foi 20 | 40 | 60 80<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00 100<br>1 00 µsec<br>TJ = 175°C<br>10.00 10<br>1m s ec<br>10m s ec<br>1.00 1<br>TJ = 25°C Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse DC<br>0.10 ee 0.1 The Ls CELL<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance(pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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60 2.5<br>LIMITED BY PACKAGE ID = 32A<br>50 VGS = 10V<br>eo] Py<br>2.0<br>40<br>AN PO<br>30<br>1.5<br>aN Soeeeee 4eee<br>20<br>TENE} Freee<br>1.0<br>10 NS EEE<br>PET TING<br>0 TTT<br>0.5 Ty yy<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1<br>D = 0.50<br>0.20<br>0.1 0.10 R1 R1 R2 R2 Ri (°C/W)     τ i (sec)<br>0.05 τ J τ J τ C τ 0.7938     0.000499<br>0.020.01 τ 1 τ 1 τ 2 τ 2 0.6257     0.005682<br>Ci=  τ i / Ri<br>0.01 Ci i / Ri<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>ean ( THERMAL RESPONSE ) Limi 2. Peak Tj = P dm x Zthjc + Tc<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01 Ω<br>h y<br>Fig 12a.   Unclamped Inductive Test Circuit<br>V(BR)DSS<br>tp<br>/<br>IAS 7y<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>aa QGS QGD<br>VG<br>| ) 4<br>Charge _<br>Fig 13a.   Basic Gate Charge Waveform<br>L<br>VCC<br>DUT<br>0<br>1K<br>ned<br>Fig 13b.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


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500<br>                 I<br>D<br>TOP          3.4A<br>400                 4.6A<br>BOTTOM   32A<br>Na<br>300<br>200<br>NE|<br>100 SSL<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>NSOCCE<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

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5.0<br>ID = 1.0A<br>4.5 EES ID = 1.0mA<br>ID = 250µA<br>4.0 Fane —<o ID = 100µA<br>3.5 SSA ETEK<br>3.0 EEERSSNEER<br>2.5 PES<br>2.0 PLETEtty ESS<br>1.5 EERE<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>ETT TIN<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>10<br>0.05<br>0.10<br>1<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>120 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>100 I D  = 32A   Purely a thermal phenomenon and failure occurs at a<br>KL     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>80<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>Nope   not exceeded.<br>60 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>PSSST<br>4. PD (ave) = Average power dissipation per single<br>40     avalanche pulse.<br>SSS 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>COPS 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>BRRERRERASKS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL CN<br>OR RECTIFIER IRFR120 DATE CODEP =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE e a t PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

9 

**==> picture [279 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>a<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR P1194) P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

10 

**==> picture [241 x 206] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>$ooooo ol I sooo 4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CCE -<br>12.1 ( .476 )11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 )7.9 ( .312 ) FEED DIRECTION<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| :<br>16 mm<br>ma a<br>**----- End of picture text -----**<br>


**==> picture [86 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


iC) Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . 

Repetitive rating;  pulse width limited by 

max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS .oss while VDS is rising from 0 to 80% VDSS .while VDS is rising from 0 to 80% VDSS .DS is rising from 0 to 80% VDSS .is rising from 0 to 80% VDSS .DSS . . ) Limited by TJmax, starting TJ = 25°C, L = 0.197mH ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 32A, VGS =10V. Part not avalanche performance. 

® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

recommended for use above this value. 

© his value determined from sample failure population. 100% tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

@ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

θ 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

11 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfu2307zpbf/mosfet-n-ch-75v-i-pak/dp/1688593)
---

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