# Power MOSFET, N Channel, 30 V, 8.2 A, 0.019 ohm, TSOP, Surface Mount

![Product image](https://novapart.co/image/farnell:2114659/)

**URL**: https://novapart.co/products/IRFTS8342TRPBF/power-mosfet-n-channel-30-v-82-a-0019-ohm-tsop
**SKU**: IRFTS8342TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.1240
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:8.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.015ohm; R; Available until stocks are exhausted Alternative available

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 6Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 2W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TSOP |
| Drain Source Voltage Vds | 30V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 8.2A |
| Drain Source On State Resistance | 0.019ohm |
| Gate Source Threshold Voltage Max | 1.8V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2114659/)

| 

## IRFTS8342PbF 

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VDS 30 V<br>VGS ±20 V<br>R<br>DS(on) max  19 m <br>(@VGS = 10V)<br>R<br>DS(on) max  29 m <br>(@VGS = 4.5V)<br>Qg (typical) 4.8 nC<br>ID 8.2 A<br>(@TA  =  25°C)<br>He<br>Applications<br><br>**----- End of picture text -----**<br>


HEXFET Power MOSFET 

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TSOP-6<br>**----- End of picture text -----**<br>


## **Features and Benefits** 

## **Features** 

## **Resulting Benefits** 

Industry-Standard TSOP-6 Package Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen  Environmentally Friendlier MSL1, Consumer Qualification Increased Reliability 

|**Orderable part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Note**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFTS8342TRPBF|TSOP-6|Tape and Reel|**Quantity**<br>3000||



## **Absolute Maximum Ratings** 

|**Absolute Maximum Ratings**|**Absolute Maximum Ratings**<br>**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VDS<br>~~ee~~|Drain-to-Source Voltage<br>~~ee~~|30<br>~~ee~~|V<br>~~ee~~<br>~~ee~~|
|VGS<br>~~ee~~<br>~~ee~~|Gate-to-Source Voltage<br>~~ee~~<br>~~ee~~|±20<br>~~ee~~<br>~~ee~~||
|ID@ TA= 25°C<br>~~es~~<br>~~ee~~|Continuous Drain Current, VGS@ 10V<br>~~es~~<br>~~ee~~|8.2<br>~~es~~<br>~~ee~~|A<br>~~ee~~|
|ID@ TA= 70°C<br>~~es~~<br>~~ee~~|Continuous Drain Current, VGS@ 10V<br>~~es~~<br>~~ee~~|6.6<br>~~es~~<br>~~ee~~||
|IDM<br>~~ee~~<br>~~en~~|Pulsed Drain Current<br>~~ee~~<br>~~en~~|80<br>~~ee~~<br>~~en~~||
|PD@TA= 25°C<br>~~ee~~<br>~~es~~<br>~~en~~|Power Dissipation<br>~~ee~~<br>~~es~~<br>~~en~~|2.0<br>~~ee~~<br>~~es~~<br>~~en~~|W<br>~~ee~~<br>|
|PD@TA= 70°C<br>~~en~~<br>~~ee~~|Power Dissipation<br>~~en~~<br>~~ee~~|1.3<br>~~en~~<br>~~QO~~<br>||
|~~en~~<br>~~a~~<br>~~ee~~|Linear Derating Factor<br>~~en~~<br>~~a~~<br>~~ee ee~~|0.02<br>~~en~~<br>~~a~~<br>~~QO~~<br>~~ee~~|W/°C<br>~~a~~<br>~~ee~~|
|TJ<br>TSTG<br>~~a~~<br>~~ee~~|Linear Derating Factor<br>Operating Junction and<br>Storage Temperature Range<br>~~a~~<br>~~ee ee~~|-55  to + 150<br>~~a~~<br>~~QO~~<br>~~ee~~|°C<br>~~a~~<br>~~ee~~|



Notes through are on page 2 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~DD~~|**Typ.**<br>~~DD~~|**Max.**<br>~~OO~~|**Units**<br>~~OO~~|**Conditions**<br>~~QO~~|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~RD~~|30<br>~~RD~~<br>~~DD~~<br>~~Rs~~|–––<br>~~RD~~<br>~~DD~~<br>~~I~~|–––<br>~~RD~~<br>~~OO~~<br>~~(QO~~|V<br>~~RD~~<br>~~OO~~<br>~~(QO~~|VGS= 0V, ID= 250μA<br>~~RD~~<br>~~QO~~<br>~~(QO~~|
|VDSS/TJ|Breakdown Voltage Temp. Coefficient<br>~~RD~~<br>~~RD~~|–––<br>~~RD~~<br>~~DD~~<br>~~RD~~<br>~~Rs~~<br>~~ee~~|18<br>~~RD~~<br>~~DD ~~<br>~~RD~~<br>~~I~~<br>|–––<br>~~RD~~<br> ~~OO~~<br>~~RD~~<br>~~(QO~~<br>|mV/°C<br>~~RD~~<br>~~OO ~~<br>~~RD~~<br>~~(QO~~<br>~~S~~<br>|Reference to 25°C, ID= 1mA<br>~~RD~~<br> ~~QO~~<br>~~RD~~<br>~~(QO~~<br>~~S~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~e~~<br>~~a~~|–––<br>~~Rs ~~<br>~~e~~<br>~~ee~~|15<br> ~~I ~~<br>~~e~~~~**e**~~<br>~~ee~~|19<br> ~~(QO~~<br>~~**e**~~<br>~~ee~~|m<br>~~(QO~~<br>~~**e**~~<br>~~S~~<br>~~ee~~|VGS= 10V, ID= 8.2A<br>~~(QO~~<br>~~**e**~~<br>~~S~~<br>~~@~~|
|||–––<br>~~e~~<br>~~ee~~<br>~~ee~~|22<br>~~e~~~~**e**~~<br>~~ee~~<br>~~ee~~|29<br>~~**e**~~<br>~~ee~~<br>~~ee~~||VGS= 4.5V, ID= 6.6A<br>~~**e**~~<br>~~S~~<br>~~@~~|
|VGS(th)|Gate Threshold Voltage<br>~~a~~|1.35<br>~~ee ~~<br>~~ee~~|1.80<br> ~~ee ~~<br>~~ee~~|2.35<br> ~~ee~~<br>~~ee~~|V<br>~~S~~<br>~~ee~~|VDS= VGS, ID= 25μA<br>~~S~~<br>~~@~~<br>~~EE~~|
|VGS(th)|Gate Threshold Voltage Coefficient<br>~~es~~|–––<br>~~ee~~<br>~~es~~|-5.7<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~EE~~|mV/°C<br>~~es~~<br>~~EE~~||
|IDSS|Drain-to-Source Leakage Current<br>~~e~~|–––<br>~~ee ~~<br>~~e~~<br>|–––<br> ~~ee ~~<br>~~e~~~~**e**~~<br>~~eee~~|1.0<br> ~~ee~~<br>~~**e**~~<br>~~EE~~<br>~~ee~~|μA<br>~~**e**~~<br>~~EE~~<br>~~ee~~|VDS= 24V, VGS= 0V<br>~~**e**~~<br>~~EE~~|
|||–––<br>~~e~~<br>~~e~~|–––<br>~~e~~~~**e**~~<br>~~eeee~~|150<br>~~**e**~~<br>~~EE~~<br>~~ee~~||VDS= 24V, VGS= 0V, TJ= 125°C<br>~~**e**~~<br>~~EE~~|
|IGSS<br>~~a~~|Gate-to-Source Forward Leakage<br>~~e~~<br>~~a~~|–––<br>~~e~~<br>~~e~~<br>|–––<br>~~e~~~~**e**~~<br>~~eeee ~~<br>|100<br>~~**e**~~<br>~~EE~~<br> ~~ee~~<br>|nA<br>~~**e**~~<br>~~EE~~<br>~~ee~~<br><br>~~(~~|VGS= 20V<br>~~**e**~~<br>~~EE~~<br>|
||Gate-to-Source Reverse Leakage<br>~~a~~|–––<br><br>~~RD~~|–––<br>|-100<br><br>~~(~~||VGS= -20V<br><br>~~(QO~~|
|gfs<br>~~a~~|Forward Transconductance<br>~~aeS~~|12<br>~~eS~~<br>~~RD~~|–––<br>~~eS~~|–––<br>~~eS~~<br>~~(~~|S<br>~~eS~~<br>~~(~~|VDS= 10V, ID= 6.6A<br>~~eS~~<br>~~(QO~~|
|Qg|Total Gate Charge<br>~~QO~~|–––<br>~~RD~~<br>~~QO~~|4.8<br>~~QO~~|–––<br>~~(~~<br>~~QO~~|nC<br>~~(~~<br>~~QOD~~|ID= 6.6A<br>VDS= 15V<br>VGS= 4.5V<br>~~(QO~~<br>~~(OO~~|
|Qgs|Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~|2.1<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~GO~~|–––<br>~~GO~~<br>~~GON~~|1.6<br>~~GO~~<br>~~(RD~~|–––<br>~~GO~~<br>~~ID~~|||
|RG|Gate Resistance<br>~~RD~~|–––<br>~~RD~~<br>~~GON~~|2.6<br>~~RD~~<br>~~(RD~~|–––<br>~~RD~~<br>~~ID~~|<br>~~RD~~<br>~~QOD~~|~~RD~~<br>~~(OO~~|
|td(on)|Turn-On DelayTime<br>~~GO~~|–––<br>~~GON ~~<br>~~GO~~<br>~~(~~|7.3<br> ~~(RD ~~<br>~~(~~|–––<br> ~~ID~~|ns<br>~~QOD~~|RG= 6.8<br>VDD= 15V, VGS= 4.5V<br>ID= 6.6.A<br>~~(OO~~<br>®|
|tr|Rise Time<br>~~en~~|–––<br>~~en~~<br>~~(~~|15<br>~~en~~<br>~~(~~|–––<br>~~en~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~(~~<br>~~es~~|9.1<br>~~(~~<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~GO~~|–––<br>~~GO~~|8.2<br>~~GO~~|–––<br>~~GO~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~|560<br>~~es~~|–––<br>~~es~~|pF|ƒ= 1.0MHz<br>VGS= 0V<br>VDS= 25V|
|Coss|Output Capacitance<br>~~GO~~|–––<br>~~GO~~|102<br>~~GO~~|–––<br>~~GO~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|48<br>~~es~~|–––<br>~~es~~|||



Repetitive rating;  pulse width limited by max. junction temperature. 

> Pulse width  400μs; duty cycle  2%. 

When mounted on 1 ich square copper board. 

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100 100<br>VGS VGS<br>TOP           10V TOP           10V<br>8.0V 8.0V<br>7.0V 7.0V<br>4.5V 4.5V<br>10 3.5V 2a AN 3.5V oo<br>3.0V 3.0V<br>2.75V 2.75V<br>1 BOTTOM 2.5V Sr een 10 BOTTOM 2.5V muiitieamaiii<br>2.5V<br>O77 MY<br>0.1 2.5V<br>60μs PULSE WIDTH 60μs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.01 SEPT TT aLilaa 1 Y/ lh<br>0.01 0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 1.6<br>ID = 8.2A<br>a eee ae T J  = 150°C 1.4 VGS = 10V Z<br>aa A<br>|AtT OA | YLA<br>1.2<br>10 _f | | | 4<br>f= RUREP Zana<br>1.0<br>Eo TJ = 25°C —— LZ<br>ee ee ee es ee 0.8 V4<br>V DS  = 15V<br>60μs PULSE WIDTH<br>1.0 0.6<br>PP ee Ey } ATE<br>2 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics Fig 4.   Normalized On-Resistance vs. Temperature<br>10000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED ID= 6.6A<br>C  = C 12.0<br>rss   gd  VDS= 24V<br>C = C + C<br>oss   ds  gd VDS= 15V<br>10.0<br>1000 oom VDS= 6.0V 4<br>C<br>iss<br>SC poVA<br>8.0<br>Coss<br>6.0<br>mL | FH | f  |<br>100<br>C<br>10 eeaPI rss ee eeeeeee 4.02.00.0 Danae Vi AGERE<br>1 10 100 0 2 4 6 8 10 12 14<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100<br>T = 150°C<br>J<br>10<br>T = 25°C<br>J<br>1<br>V GS  = 0V<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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10<br>8<br>Too><br>6 NLNN<br>aN<br>4<br>NS<br>2<br>ELEN<br>0<br>25 50 75 100 125 150<br> TA , Ambient Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Ambient Temperature 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100<br>100μsec<br>1 msec<br>10<br>10msec<br>1<br>0.1 Tc = 25°C<br>Tj = 150°C DC<br>Single Pulse<br>0.01<br>0.01 0.1 1 10 100<br>VDS, Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>2.2<br>2.0<br>1.8 6pBUNN<br>SSRSET<br>1.6<br>TO<br>ID = 25μA<br>1.4 ID = 250μA —7% —<br>ID = 1.0mA<br>1.2<br>SEBSRN<br>ZaQNNG<br>1.0<br>CoP<br>0.8 PEE L_LELEIN<br>-75 -50 -25 0 25 50 75 100 125 150<br>TJ , Temperature ( °C )<br>ID,  Drain-to-Source Current (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 10.** Threshold Voltage vs. Temperature 

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100<br>D = 0.50<br>10 0.20<br>0.10<br>0.05<br>1 0.02<br>0.01<br>0.1<br>SINGLE PULSE<br>0.01 ( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthja + TA<br>EEE HH HE EHH EH |<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJA ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 

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TER Rectifier<br>40<br>ID = 8.2A<br>fff<br>35<br>'<br>30<br>25<br>pth tT TJ = 125°C<br>20 |v|<br>15 CREF)<br>T = 25°C<br>J<br>|<br>10 ee<br>0 5 10 15 20<br>VGS, Gate -to -Source Voltage  (V)<br>) <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 12.** On-Resistance vs. Gate Voltage 

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100<br>90 I D<br>TOP         0.96A<br>NCEE<br>80 1.5A<br>ACE<br>BOTTOM 6.6A<br>70<br>CAPE<br>60<br>PINE<br>KCNC<br>50<br>NEKOECEE<br>40<br>30<br>KOSSECCCEE<br>20<br>ROIS NTT<br>10<br>POSCCE S S E<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Avalanche Energy vs. Drain Current 

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**----- Start of picture text -----**<br>
100<br>90<br>Ft tT | tg tt<br>80 Ft | tT tA tt<br>70<br>Vgs = 4.5V<br>60<br>CER EAE =<br>50<br>40 CCl/<br>Vgs = 10V<br>30<br>Fate<br>20<br>ee<br>10 oe<br>0 10 20 30 40 50 60 70 80<br>ID, Drain Current (A)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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**----- Start of picture text -----**<br>
1000<br>YA<br>800<br>a<br>UA<br>600<br>A a<br>\<br>CAT )<br>400<br>SUN<br>200<br>MI<br>CT Pa<br>0<br>1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0<br>Time (sec)<br>Single Pulse Power (W)<br>**----- End of picture text -----**<br>


## **Fig 15.** Typical Power vs. Time 

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**----- Start of picture text -----**<br>
® Driver Gate Drive<br>P.W.<br>D.U.T + — P.W. Period —_____ D = a Period<br>VGS=10<br>(a [©)]  Circtt avout considerations | | |t<br><br>| -  CowOW Leakaneray Inauctance Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oR - [L] Current Transformer - ® + Current r Current di/dt NN<br>ty ® D.U.T. VDS Waveform Diode Recovery<br>dv/dt \ + VDD<br> Re-Applied<br> Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (A  vidt controlled by Rg Vo p - Inductor Curent ee<br><br>Ripple   5% ISD<br>**----- End of picture text -----**<br>


**Fig 16.** 

or N-Channel 

ower MOSFETs 

HEXFET 

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L<br>VCC<br>DUT<br>0<br>1K S<br>nel<br>**----- End of picture text -----**<br>


**Fig 17a.** Gate Charge Test Circuit 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>v 20V e<br>tp 0.01<br>**----- End of picture text -----**<br>


**Fig 18a.** Unclamped Inductive Test Circuit 

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<br><br>**----- End of picture text -----**<br>


**Fig 19a.** Switching Time Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 17b.** Gate Charge Waveform 

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V(BR)DSS<br>e— tp  —><br>/<br>/ |<br>/ |<br>IAS<br>Fig 18b.<br>V<br>DS<br>90% J<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Unclamped Inductive Waveforms 

**Fig 19b.** Switching Time Waveforms 

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DATE CODE MARKING INSTRUCTIONS ~~RPE~~ 

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3 03 Cc<br>04 D<br>5<br>7<br>8<br>6 | |<br>90 2425 " Y<br>!<br>**----- End of picture text -----**<br>


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http://www.irf.com/package/ 

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## **Qualification information**[†] 

|**Qualification information**[†]|||
|---|---|---|
|Qualification level|Consumer<br>††<br>(per JEDEC JES D47F<br>†††guidelines)||
|Moisture Sensitivity Level|TSOP-6|MS L1<br>(per JEDEC J-S T D-020D<br>†††)|
|RoHS compliant|Yes||



t http://www.irf.com/product-info/reliability to 

Qualification standards can be found at International Rectifier’s web site 

http://www.irf.com/product-info/reliability 

Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ tho Applicable version of JEDEC standard at the time of product release. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 02/2012 

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8 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFTS8342TRPBF/power-mosfet-n-channel-30-v-82-a-0019-ohm-tsop)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfts8342trpbf/mosfet-n-ch-30v-8-2a-6tsop/dp/2114659)
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