# MOSFET, N CHANNEL, 60V, 173A, TO-262-3

![Product image](https://novapart.co/image/farnell:2424279/)

**URL**: https://novapart.co/products/IRFSL7537PBF/mosfet-n-channel-60v-173a-to-262-3
**SKU**: IRFSL7537PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7610
**Stock**: 10+

## Description

; MOSFET, N CHANNEL, 60V, 173A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:173A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00275ohm; Rds(on) Te

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (17-Dec-2014) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 230W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-262 |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 173A |
| Drain Source On State Resistance | 0.00275ohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2424279/)

Strong _IR_ FET™ IRFB7534PbF IRFS7534PbF IRFSL7534PbF 

## International 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

HEXFET[® ] Power MOSFET D **VDSS 60V RDS(on) typ. 2.0m**  G **max 2.4m**  **ID (Silicon Limited) 232A**  S ~~==~~ **ID (Package Limited) 195A** D D S D S S G G G[D ] TO-220AB D[2] Pak TO-262 IRFB7534PbF IRFS7534PbF IRFSL7534PbF **G D S** Gate Drain Source ~~a~~ 

|||~~a~~|**G**<br>Gate<br>~~a~~|**D**<br>**S**<br>Drain<br>Source<br>~~a~~|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|||**Form**|**Quantity**||
|IRFB7534PbF|TO-220|Tube|50|IRFB7534PbF|
|IRFSL7534PbF|TO-262|Tube|50|IRFSL7534PbF|
|IRFS7534PbF|D2-Pak|Tube<br>Tape and Reel Left|50<br>800|IRFS7534PbF<br>IRFS7534TRLPbF|



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15 250<br>ID = 100A Limited by package<br>12 200<br>WE eae<br>9 150<br>ALLELE PTI<br>6 100<br>Me, TJ = 125°C<br>3 50<br>eeeeee TJ = 25°C e PTT TEN<br>0 |r re 0 ERR<br>2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 ~~_—~~ 

1 www.irf.com © 2014 International Rectifier 

Submit Datasheet Feedback                        November 5, 2014 

IRFB/S/SL7534PbF ~~[eT~~ 

## ~~IvaR~~ 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**|||**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)|||232|||
||ID @TC= 100°C<br>ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)|||164<br>195||A|
||IDM|Pulsed Drain Current|||944*|||
||PD @TC= 25°C|Maximum Power Dissipation|||294||W|
|||Linear DeratingFactor|||1.96||W/°C|
||VGS|Gate-to-Source Voltage|||± 20||V|
||TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange||-55  to + 175|-55  to + 175||°C|
|||SolderingTemperature,for 10 seconds (1.6mm fromcase)|||300|||
|||MountingTorque, 6-32 or M3 Screw||10 lbf·in(1.1 N·m)||||
||**Avalanche Characteristics**|||||||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy<br>**Thermal Resistance**<br> **Symbol**<br>**Parameter**<br>~~——— =~~||||373<br>mJ<br>775<br>See Fig 15, 16, 23a, 23b<br>A<br>mJ<br>**Typ.**<br>**Max.**<br>**Units**<br>~~=~~||||
||RJC|Junction-to-Case||–––||0.51||
||RCS<br>RJA|Case-to-Sink,Flat Greased Surface<br>Junction-to-Ambient(TO-220)||0.50<br>–––||–––<br>62|°C/W|
||RJA|Junction-to-Ambient(PCB Mount) (D2-Pak)||–––||40||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|24|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.0|2.4|m|VGS= 10V,ID= 100A|
|||–––|2.6|–––||VGS=6.0V,ID=50A|
|VGS(th)|Gate Threshold Voltage|2.1|–––|3.7|V|VDS =VGS, ID =250µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS=60V,VGS=0V|
|||–––|–––|150||VDS =60V,VGS =0V,TJ =125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-SourceReverseLeakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|1.9|–––|||



## **Notes:** 

>  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

>  Repetitive rating; pulse width limited by max. junction temperature. 

>   Limited by TJmax, starting TJ = 25°C, L = 75µH, RG = 50, IAS = 100A, VGS =10V. 

>  ISD  100A, di/dt  1135A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994:  http://www.irf.com/technical-info/appnotes/an-994.pdf 

>     Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 39A, VGS =10V. 

- Pulse drain current is limited at 780A by source bonding technology. 

2 www.irf.com  © 2014 International Rectifier 

Submit Datasheet Feedback                        November 5, 2014 

~~ItaR~~ 

IRFB/S/SL7534PbF ~~Ss~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~<br>~~a~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~es~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|498|–––|–––<br>~~OO~~|S<br>~~OO~~|VDS= 10V,ID=100A|
|Qg<br>~~a~~|Total Gate Charge|–––|186|279|nC|ID= 100A<br>VDS= 30V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|43|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|56|–––|||
|Qsync<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|130|–––|||
|td(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|20<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 30V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|134<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|118<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|93|–––|||
|Ciss<br>~~es~~<br>~~a~~|Input Capacitance|–––|10034|–––|pF<br>~~es~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~es~~<br>~~a~~|Output Capacitance|–––|921|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance|–––|594|–––|||
|Coss eff.(ER)<br>~~a~~<br>~~|~~<br>~~GO~~|Effective Output Capacitance<br>(Energy Related)<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~|892<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~||VGS= 0V, VDS = 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~GO~~|Output Capacitance(Time Related)<br>~~GO~~|–––<br>~~GO~~|1145<br>~~GO~~|–––<br>~~GO~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**<br>~~GO es~~<br>~~esOD~~|||||||
|**Symbol**<br>~~es~~|**Parameter **<br>~~OD~~|**Min.**<br>~~OD~~|**Typ. **<br>~~OD~~|**Max.**<br>~~OD~~|**Units**<br>~~OD~~|**Conditions**<br>~~OD~~|
|IS<br>~~es~~<br>~~a~~|Continuous Source Current<br>(BodyDiode)<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|232<br>~~OD~~<br>~~a~~|A<br>~~OD~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~OD~~<br>~~a~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|944*<br>~~a~~|||
|VSD<br>~~a~~<br>~~po~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~po~~|Peak Diode Recoverydv/dt|–––|9.2|–––|V/ns T|V/ns TJ= 175°C,IS=100A,VDS= 60V|
|trr<br>~~po~~<br>~~a ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|46<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|49<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~a ee~~<br>~~pf~~|Reverse Recovery Charge<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~|71<br>~~ee~~|–––<br>~~ee~~|nC<br>~~ee~~||
|||–––|83|–––|||
|IRRM<br>~~pf~~<br>~~a~~|Reverse Recovery Current<br>~~pf~~|–––|2.6|–––|A||



3 www.irf.com  © 2014 International Rectifier Submit Datasheet Feedback                        November 5, 2014 ~~=H~~ 

IRFB/S/SL7534PbF 

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1000 1000<br>100<br>4.5V<br>100<br>4.5V<br>VGS<br>TOP           15V VGS<br>10 10V TOP           15V<br>8.0V 10V<br>7.0V 8.0V<br>6.0V 7.0V<br>5.5V 6.0V<br>60µs PULSE WIDTH 5.0V 5.5V<br>Tj = 25°C BOTTOM 4.5V 60µs PULSE WIDTH 5.0V<br>Tj = 175°C BOTTOM 4.5V<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.4<br>ID = 100A<br>VGS = 10V<br>2.0<br>100<br>|Z 1.6 BuaEer<br>T J  = 175°C TJ = 25°C<br>10<br>1.2<br>1<br>0.8<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 0.4<br>2 [ftan 4 6 8 -60 PCE -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 VGS   = 0V,       f = 1 MHZ 14.0<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 100A<br>C Crss  oss    = C = Cds gd + Cgd 12.010.0 VVDS DS = 48V= 30V<br>10000 Ciss VDS= 12V<br>8.0<br>C oss 6.0<br>1000 a C rss a<br>4.0<br>ieee w/4Anee<br>2.0<br>100 0.0<br>0.1 SUI) 1 10 100 = 0 WERE 50 100 150 200 250<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage ge e 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage Gate-to-Source Voltage ge e 4 www.irf.com  © 2014 International Rectifier Submit Datasheet Feedback                        November 5, 2014 ~~So = °°”~~ 

~~16aR~~ 

IRFB/S/SL7534PbF ~~yy~~ 

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1000<br>1000<br>100µsec<br>100 TJ = 175°C 100<br>Limited by Package<br>10 1m sec<br>nas TJ = 25°C<br>10 OPERATION IN THIS AREA<br>ieee aS LIMITED BY R DS (on)<br>1<br>10msec<br>1 [po DC<br>0.1 Tc = 25°C<br>VGS = 0V Tj = 175°C<br>Single Pulse<br>0.01<br>0.1<br>fitth =o Lees<br>0.1 1 10<br>0.1 0.4 0.7 1.0 1.3 1.6 1.9<br>VDS, Drain-toSource Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>77 1.6<br>Id = 1.0mA<br>1.4<br>74 1.2<br>CTE<br>1.0<br>71 ATL 0.8<br>0.6<br>68 S000 0.4<br>0.2<br>65 7CCCLE 0.0<br>-60 -20 20 60 100 140 180 0 10 20 30 40 50 60<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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12<br>VGS = 5.5V<br>VGS = 6.0V<br>VGS = 7.0V<br>9 VGS = 8.0V<br>VGS = 10V<br>6<br>3<br>||<br>0 ft ff<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

5 www.irf.com  © 2014 International Rectifier Submit Datasheet Feedback                        November 5, 2014 ~~— ee~~ 

~~I¢aR~~ 

IRFB/S/SL7534PbF ~~[~~ 

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1<br>TT TLLn<br>D = 0.50<br>0.1 0.20<br>Hi Ss tt |<br>0.10<br>0.05<br>0.01 a 0.02 nel<br>0.01<br>TN<br>0.001 LT| SINGLE PULSE<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 ail Le<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150 ° C and<br>Tstart =25°C (Single Pulse)<br>100<br>TTTCET<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>pce LTTE<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse Width 

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400<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>350 BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>ID = 100A 1.Avalanche failures assumption:<br>300 qTONG Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>250 part type.<br>PSNI TEETH 2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>   exceeded.<br>200 PENNE<br>3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>150<br>PLT INNO TET 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>100 LETT NNT  increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>50 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>iti PENN<br>    (assumed as 25°C in Figure 15, 16).<br>ENN<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] 

EAS (AR) = PD (ave)·tav 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

6 www.irf.com  © 2014 International Rectifier Submit Datasheet Feedback                        November 5, 2014 ~~~—————————~~ 

IRFB/S/SL7534PbF ~~4 43xz;D~~ 

## ~~nr~~ 

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4.5 15<br>IF = 60A<br>TOCA<br>4.0 VR = 51V<br>TJ = 25°C<br>3.5 PAR 10 T J  = 125°C cL ere<br>3.0<br>CSS eT<br>2.5<br>CCUSSEZ TSS Zee<br>5<br>2.0 ID = 250µA<br>ID = 1.0mA<br>ID = 1.0A<br>aa 2aNGe =<br>1.5<br>SESSGRERN A PED<br>1.0 0<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>Fig 17.   Threshold Voltage vs. Temperature  Fig 18.   Typical Recovery Current vs. dif/dt<br>15 300<br>IF = 100A IF = 60A<br>VR = 51V VR = 51V<br>250<br>TJ = 25°C TJ = 25°C<br>10 T J  = 125°C TJ = 125°C<br>Ti [HE<br>200<br>ay ’5 VA<br>150<br>Paan BER a<br>5<br>100<br>Zane<br>0 50<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>ATCT] = BREE<br>diF /dt (A/µs) diF /dt (A/µs)<br>Fig 19.   Typical Recovery Current vs. dif/dt  Fig 20.   Typical Stored Charge vs. dif/dt<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


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300<br>IF = 100A<br>VR = 51V<br>250<br>TJ = 25°C<br>TJ = 125°C<br>ir<br>200<br>ae?<br>150<br>EER<br>EE2an<br>100<br>ytoln<br>50<br>| |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 www.irf.com  © 2014 International Rectifier Submit Datasheet Feedback                        November 5, 2014 ~~zs°°.~~ 

~~I6aR~~ 

## IRFB/S/SL7534PbF ~~[~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 87] intentionally omitted <==**

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


**==> picture [17 x 9] intentionally omitted <==**

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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**==> picture [21 x 8] intentionally omitted <==**

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

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Id<br>Vds<br>Vgs<br>Vgs /, (th) !: |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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8 

IRFB/S/SL7534PbF ~~as~~ 

## ~~ItaR~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

**==> picture [487 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 www.irf.com  © 2014 International Rectifier Submit Datasheet Feedback                        November 5, 2014 ~~z= °°” — oT~~ 

IRFB/S/SL7534PbF ~~as~~ 

## ~~ItaR~~ 

**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [370 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C"<br>LOGO<br>DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>|<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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**D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY<br>YEAR 0 =  2000<br>LOT CODE<br>WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~TOR~~ 

IRFB/S/SL7534PbF ~~OS~~ 

## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [370 x 392] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFB/S/SL7534PbF ~~[~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
||TO-262|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/5/2014|<br>Updated EAS (L =1mH)= 775mJ  on page 2<br><br>Updated note 10  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 39A, VGS=10V”.  on page 2<br><br>Updatedpackage outline onpage 9,10,11.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ Submit Datasheet Feedback                        November 5, 2014 ~~_~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFSL7537PBF/mosfet-n-channel-60v-173a-to-262-3)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfsl7537pbf/mosfet-n-channel-60v-173a-to-262/dp/2424279)
---

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