# Power MOSFET, N Channel, 200 V, 62 A, 0.022 ohm, TO-262, Through Hole

![Product image](https://novapart.co/image/farnell:2580032/)

**URL**: https://novapart.co/products/IRFSL4227PBF/power-mosfet-n-channel-200-v-62-a-0022-ohm-to-262
**SKU**: IRFSL4227PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Power Dissipation | 330W |
| Transistor Mounting | Through Hole |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 330W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.022ohm |
| Transistor Case Style | TO-262 |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 62A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580032/)

## PD - 96131A IRFS4227PbF IRFSL4227PbF 

## **Features** 

Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications | Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications 

Low QG for Fast Response High Repetitive Peak Current Capability for Reliable Operation 

Short Fall & Rise Times for Fast Switching : 175°C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability 

## **Key Parameters** 

|**Key Parametersey Parameters Parametersarametersrametersametersmeterseterstersersrss**|**Key Parametersey Parameters Parametersarametersrametersametersmeterseterstersersrss**|**Key Parametersey Parameters Parametersarametersrametersametersmeterseterstersersrss**|
|---|---|---|
|VDSmax|200|V|
|VDS(Avalanche) typ.|240|V|
|RDS(ON)typ. @ 10V|22|m|
|IRPmax @ TC= 100°C|130|A|
|TJmax|175|°C|



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D<br>D D<br>S :<br>D S<br>G G D<br>G<br>D [2] Pak TO-262<br>S<br>IRFS4227PbF IRFSL4227PbF<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Description** 

HEXFET[®] Power MOSFET 

MOSFET 

OSFET 

## OSFET 

## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|VGS|Gate-to-Source Voltage<br>~~RG~~|±30<br>~~RG~~|V<br>~~RG~~|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~RG~~<br>~~a~~|62<br>~~RG~~<br>~~a~~<br>~~Q~~|A<br>~~RG~~<br>~~Q~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~a~~|44<br>~~a~~||
|IDM|Pulsed Drain Current<br>~~eG~~|260<br>~~eG~~||
|IRP@ TC= 100°C|Repetitive Peak Current<br>~~>~~|130<br>~~>~~||
|PD@TC= 25°C|Power Dissipation<br>~~>~~<br>~~a~~|330<br>~~>~~<br>~~a~~<br>~~G~~|W|
|PD@TC= 100°C<br>~~pa~~|Power Dissipation<br>~~RG~~<br>~~pa~~|190<br>~~RG~~<br>~~G~~||
|~~pa~~|Linear DeratingFactor<br>~~RG~~<br>~~a~~<br>~~pa~~|2.2<br>~~RG~~<br>~~a~~<br>~~G~~|W/°C<br>~~a~~|
|TJ<br>TSTG<br>~~pa~~|Operating Junction and<br>Storage Temperature Range<br>~~pa~~|-40  to + 175<br>~~G~~|°C|
|~~pa~~|SolderingTemperature for 10 seconds<br>~~pa~~|300<br>~~G~~||
|~~pa~~|MountingTorque,6-32 or M3 Screw<br>~~pa~~<br>~~a~~|10lbf n(1.1N m)<br>~~G~~<br>~~a~~|N<br>~~a~~|



* RθJC (end of life) for D[2] Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium. 

> Notes ® hrough © are on page 8 

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**Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage|200|–––|–––|V|VGS= 0V, ID= 250µA|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ss~~<br>~~a~~|–––<br>~~ss~~<br>~~Gd~~|170<br>~~ss~~<br>~~ss~~|–––<br>~~ss~~<br>~~ss~~|mV/°C<br>~~ss~~<br>~~G~~|Reference to 25°C, ID= 1mA<br>~~ss~~<br>~~GC:~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~a~~<br>~~SSS~~|–––<br>~~Gd~~<br>~~SSS~~|22<br>~~ss~~<br>~~SSS~~|26<br>~~ss~~<br>~~SSS~~|mΩ<br>~~G~~|VGS= 10V, ID= 46A<br>~~GC:~~<br>~~ee~~|
|VGS(th)|Gate Threshold Voltage<br>~~a~~<br>~~SSS~~|3.0<br>~~Gd ~~<br>~~SSS~~|–––<br> ~~ss~~<br>~~SSS~~|5.0<br>~~ss~~<br>~~SSS~~|V<br>~~G~~|VDS= VGS, ID= 250µA<br>~~GC:~~<br>~~ee~~<br>~~ee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~SSS~~|–––<br>~~SSS~~|-13<br>~~SSS~~<br>~~a~~|–––<br>~~SSS~~<br>~~ee~~|mV/°C<br>~~ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~SSS ~~<br>~~EE~~|–––<br> ~~SSS~~<br>~~EE~~|–––<br>~~SSS~~<br>~~a~~<br>~~EE~~|20<br>~~SSS~~<br>~~ee~~<br>~~EE~~|µA<br>~~ee~~<br>~~EE~~|VDS= 200V, VGS= 0V<br>~~ee~~<br>~~ee~~|
|||–––<br>~~EE~~|–––<br>~~a~~<br>~~EE~~|200<br>~~ee~~<br>~~EE~~|µA<br>~~ee~~<br>~~EE~~|VDS= 200V, VGS= 0V, TJ= 125°C<br>~~ee~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~EE~~<br>~~ee~~<br>~~**|**~~|–––<br>~~EE~~<br>~~ee~~<br>~~**|**~~|–––<br>~~EE~~<br>~~ee~~|100<br>~~EE~~<br>~~ee~~|nA<br>~~EE~~<br>~~ee~~<br>~~G~~|VGS= 20V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~**|**~~<br>~~a~~|–––<br>~~ee~~<br>~~**|**~~<br>~~Gs~~|–––<br>~~ee~~<br>~~Qe~~|-100<br>~~ee~~<br>~~Qe~~||VGS= -20V<br>~~ee~~<br>~~GC~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~**|**~~<br>~~a~~<br>~~SS~~|49<br>~~ee~~<br>~~**|**~~<br>~~Gs~~<br>~~SS~~|–––<br>~~ee~~<br>~~Qe~~<br>~~SS~~|–––<br>~~ee~~<br>~~Qe~~|S<br>~~ee~~<br>~~G~~|VDS= 25V, ID= 46A<br>~~ee~~<br>~~GC~~<br>~~ee~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~SS~~|–––<br>~~Gs ~~<br>~~SS~~<br>~~es~~|70<br> ~~Qe~~<br>~~SS~~|98<br>~~Qe~~|nC<br>~~G~~<br>~~ee~~|VDD= 100V, ID= 46A, VGS= 10V<br>~~GC~~<br>~~ee~~<br>~~ee~~|
|Qgd|Gate-to-Drain Charge<br>~~SS~~<br>~~ee~~<br>~~**e**ee~~|–––<br>~~SS~~<br>~~ee~~<br>~~es~~<br>~~ee~~|23<br>~~SS~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|||
|td(on)|Turn-On DelayTime<br>~~SS~~<br>~~ee~~<br>~~**e**ee~~|–––<br>~~SS~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ed~~|33<br>~~SS~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~|VDD= 100V, VGS= 10V<br>ID= 46A<br>RG= 2.5Ω<br>See Fig. 22<br>~~ee~~<br>~~ee~~|
|tr|Rise Time<br>~~**e**ee~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ed~~<br>~~es~~|20<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~**e**ee~~<br>~~es~~|–––<br>~~ee~~<br>~~ed~~<br>~~es~~<br>~~es~~<br>~~es~~|21<br>~~ee~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~|||
|tf|Fall Time<br>~~**e**ee~~<br>~~e~~|–––<br>~~ee~~<br>~~es ~~<br>~~e~~<br>~~es~~|31<br>~~ee~~<br> ~~es~~<br>~~e~~|–––<br>~~ee~~<br>~~e~~|||
|tst|Shoot Through BlockingTime<br>~~**e**ee~~<br>~~e~~<br>~~pO—S~~|100<br>~~ee~~<br>~~e~~<br>~~es~~<br>~~pO—S~~|–––<br>~~ee~~<br>~~e~~<br>~~pO—S~~|–––<br>~~ee~~<br>~~e~~<br>~~pO—S~~|ns<br>~~ee~~<br>~~pO—S~~|VDD= 160V, VGS= 15V, RG= 4.7Ω<br>~~ee~~<br>~~pO—S~~|
|EPULSE|Energy per Pulse<br>~~pO—S~~|–––<br>~~pO—S~~|570<br>~~pO—S~~|–––<br>~~pO—S~~|µJ<br>~~pO—S~~|VDS= 160V, RG= 4.7Ω,TJ= 25°C<br>L = 220nH, C= 0.4µF,  VGS= 15V<br>~~pO—S~~|
|||–––|910<br>~~a~~|–––<br>~~a~~||L = 220nH, C= 0.4µF,  VGS= 15V<br>VDS= 160V, RG= 4.7Ω,TJ= 100°C|
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~|4600<br>~~es~~|–––<br>~~es~~|pF|VDS= 25V<br>VGS= 0V<br>ƒ= 1.0MHz,|
|Coss|Output Capacitance|–––<br>~~es~~|460|–––|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~<br>~~es~~|91<br>~~es~~|–––<br>~~es~~|||
|Cosseff.<br>~~eo~~|Effective Output Capacitance<br>~~es~~<br>~~eo~~|–––<br>~~es~~<br>~~es~~|360<br>~~es~~|–––<br>~~es~~||VGS= 0V, VDS= 0V to 160V<br>~~fe~~|
|LD<br>~~eo~~|Internal Drain Inductance<br>~~es~~<br>~~eo~~|–––<br>~~es~~|4.5<br>~~es~~|–––<br>~~es~~|nH|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~fe~~|
|LS<br>~~eo~~|Internal Source Inductance<br>~~eo~~<br>~~eo~~|–––<br>~~eo~~|7.5<br>~~eo~~|–––<br>~~eo~~|||



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1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>100 BOTTOM 7.0V iP vr alll BOTTOM 7.0V EEHE eeEEA<br>See A 7.0V 100 ee<br>a ei 2. aan ee oe<br>7.0V<br>OT |<br>10<br>Yi} eens el<br>10<br>AP ≤ 60µs PULSE WIDTH P AT ≤ 60µs PULSE WIDTH<br>Al Tj = 25°C 1 O Tj = 175°C Tal<br>0.1 1 10 0.1 1 10<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 4.0<br>VDS = 25V ID = 46A<br>≤ 60µs PULSE WIDTH VGS = 10V<br>100.0 3.0<br>a= e e [ni] [iiite]<br>TJ = 175°C<br>10.0 2.0<br>1.0 TJ = 25°C 1.0<br>PIF TP EP a<br>0.1 a PET<br>0.0 EE<br>3.0 4.0 5.0 6.0 7.0 8.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics Fig 4.   Normalized On-Resistance vs. Temperature<br>1000 1000<br>L = 220nH L = 220nH<br>900 C = 0.4µF         100°C 800 C = Variable        100°C       100°C°CC<br>800        25°C | [[fA] |    25°C<br>700<br>600<br>600 P| | YY | A<br>500<br>a | pepe<br>400<br>400<br>| ofp | fet =><br>300 a =a<br>200<br>200<br>100 | | ft | | tl 0<br>110 120 130 140 150 160 170 130 140 150 160 170 180 190<br>VDS, Drain-to -Source Voltage  (V) ID, Peak Drain Current  (A)<br>ID, Drain-to-Source Current (A)<br>Energy per pulse (µJ)<br>ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Energy per pulse (µJ)<br>**----- End of picture text -----**<br>


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1000<br>L = 220nH<br>C = Variable        100°C       100°C°CC<br>800<br>   25°C<br>600<br>A<br>| pepe<br>400<br>=><br>=a<br>200<br>0<br>130 140 150 160 170 180 190<br>ID, Peak Drain Current  (A)<br>Energy per pulse (µJ)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical EPULSE vs. Drain Current 

**Fig 5.** Typical EPULSE vs. Drain-to-Source  Voltage 

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1400<br>L = 220nH<br>1200<br>ty<br>C= 0.4µF<br>1000 C= 0.3µF a2<br>C= 0.2µF<br>800<br>600<br>400<br>200<br>0 aa<br>25 50 75 100 125 150<br>Temperature (°C)<br>Energy per pulse (µJ)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical EPULSE vs.Temperature 

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8000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>6000 C oss   = C ds  + C gd<br>Ciss<br>oT<br>4000<br>Coss TT<br>2000<br>Crss<br>MTA<br>0<br>Uiinsseelll<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Capacitance vs.Drain-to-Source Voltage 

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70<br>60<br>50<br>40<br>30 TTT ELETEN-<br>20<br>10<br>0<br>PETE T ET Ey ET AN<br>25 50 75 100 125 150 175<br>TC , CaseTemperature (°C)<br>ID  , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Drain Current vs. Case Temperature 

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1000.0 |<br>100.0<br>=<br>TJ = 175°C<br>10.0<br>1.0<br>T = 25°C<br>J<br>VGS = 0V<br>f j<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VSD, Source-to-Drain Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage<br>20<br>r ID= 46A VDS a = 160V e<br>16 VDS= 100V<br>VDS= 40V<br>12<br>nF EyS 4ane<br>8<br>An<br>4<br>Zr<br>0 Saeeoe<br>0 FREE 20 40 60 yy 80 100 120<br> QG  Total Gate Charge (nC)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Source-Drain Diode Forward Voltage 

**Fig 10.** Typical Gate Charge vs.Gate-to-Source Voltage 

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1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1µsec<br>100<br>100µsec 10µsec<br>10<br>enn enn aaa<br>1 |<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1<br>COI cr<br>1 10 100 1000<br>VDS  , Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Safe Operating Area 

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600<br>0.16<br>                 I<br>ID = 46A D<br>500 TOP          8.5A<br>               14A<br>0.12 BOTTOM   37A<br>0.08 nite 400300 Renmin\<br>T = 125°C<br>J  200<br>0.04 inne NENT<br>100<br>T = 25°C<br>J<br>0.00 =ft 0 =SNGEE|OSSS<br>5 6 7 8 9 10 25 50 75 100 125 150 175<br>VGS, Gate-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>Fig 13.    On-Resistance Vs. Gate Voltage Fig 14.   Maximum Avalanche Energy Vs. Temperature<br>5.0 200<br>ton= 1µs<br>LF<br>4.5 Duty cycle = 0.25<br>       Half Sine Wave<br>160<br>SSERSRR0E8 ||   Square Pulse<br>4.0<br>P| PNET ID = 250µA FSSE<br>120<br>3.5 SERN rest |SN<br>3.0 PLL EEL INL pope<br>N 80 eeeON<br>2.5 EERE ee Ne<br>EREENG ae<br>40<br>2.0<br>SaUGemRnRN po<br>1.5 PL} EEE LL EES 0 esee<br>-75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>TJ , Temperature ( °C ) Case Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>)ΩRDS(on),  Drain-to -Source On Resistance (<br>Repetitive Peak Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Threshold Voltage vs. Temperature 

**Fig 16.** Typical Repetitive peak Current vs. Case temperature 

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1<br>D = 0.50<br>0.1 0.20<br>0.01 — oA 0.100.020.05 eA τJ τJτ1τ1 R1 R1 τ2 τR 2 2 R2 Rτ33Rτ 3 3 τCτRi (°C/W)   0.08698  0.0000740.2112    0.001316 τi (sec)<br>Pt IEi  | ph<br>0.01 Ci= τi/Ri 0.1506    0.009395<br>Ci i/Ri<br>Notes:<br>= 2 SINGLE PULSE ee 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>0.001 A a AE-EEH<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 17.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— + D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V | GS=10V<br> •<br>[| —| - GroundLow StrayPla I n eductance<br> •   Low Leakage Inductance 2) D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [l] Current Transformer - ® + Current r Current di/dt NN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 + VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a8 •   di/dt controlled by Rg Vop -<br>•<br>D.U.T. - Device Under Test SCO<br>Isp controlled by Duty Factor "D" ® t Ripple  ≤ 5% ISD<br>* Vag = 5V for Logic Level Devices<br>Fig 18.  Diode Reverse Recovery Test Circuit for N-Channel HEXFET ® Power MOSFETs<br>V(BR)DSS(BR)DSS<br>15V ~— tp -—><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>Ww IAS A<br>ys 20VVGS aiedt /<br>tp 0.01 WAY Ω IASAS oe<br>**----- End of picture text -----**<br>


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V(BR)DSS(BR)DSS<br>~— tp -—><br>/<br>IASAS<br>**----- End of picture text -----**<br>


**Fig 19b.** Unclamped Inductive Waveforms 

**Fig 19a.** Unclamped Inductive Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K<br>a:<br>**----- End of picture text -----**<br>


**Fig 20a.** Gate Charge Test Circuit 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 e e! Qgs2 i Qgd H Qgodr {<br>**----- End of picture text -----**<br>


**Fig 20b.** Gate Charge Waveform 

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**Fig 21a.** tst  and EPULSE Test Circuit 

**Fig 21b.** tst Test Waveforms 

**Fig 21c.** EPULSE Test Waveforms 

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-<br> 1 s<br> 0.1 %<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>\<br>10% X<br>VGS < rl >|\ ple<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 22a.** Switching Time Test Circuit 

**Fig 22b.** Switching Time Waveforms 

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## (Dimensions are shown in millimeters (inches)) 

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OR<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

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TRR<br>**----- End of picture text -----**<br>


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1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>4___* —r oooTT 15.42 (.609) E44<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) t i | 4 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>° 12.80 (.504) 23.90 (.941) df<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>30.40 (1.197)<br>NOTES : BO iL       MAX.<br>1.   COMFORMS TO EIA-418.<br>2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) IE 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Repetitive rating;  pulse width limited by  max. junction temperature. 

Starting TJ = 25°C, L = 0.2mH, RG = 25Ω, IAS = 37A. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

Rθ is measured at TJ of approximately 90°C. 

® Half sine wave with duty cycle = 0.25, ton=1µsec. © When mounted on 1" square PCB (FR-4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. 

## **Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/2008 

www.irf.com 

10 



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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfsl4227pbf/mosfet-n-ch-200v-62a-to-262-3/dp/2580032)
---

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