# Power MOSFET, N Channel, 150 V, 33 A, 0.056 ohm, TO-262, Through Hole

![Product image](https://novapart.co/image/farnell:1385506/)

**URL**: https://novapart.co/products/IRFSL33N15DPBF/power-mosfet-n-channel-150-v-33-a-0056-ohm-to-262
**SKU**: IRFSL33N15DPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.0200
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Pow

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 4Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 3.8W |
| Transistor Mounting | Through Hole |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-262 |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 33A |
| Drain Source On State Resistance | 0.056ohm |
| Gate Source Threshold Voltage Max | 5.5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1385506/)

PD- 95537 

## **SMPS MOSFET** 

## IRFB33N15DPbF IRFS33N15DPbF IRFSL33N15DPbF 

HEXFET Power MOSFET 

## **Applications** 

High frequency DC-DC converters Lead-Free 

|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|
|**150V**|**0.056**Ω|**33A**|



## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses 

Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

> | Fully Characterized Avalanche Voltage and Current 

TO-220AB D[2] Pak TO-262 IRFB33N15D IRFS33N15D IRFSL33N15D 

## **Absolute Maximum Ratings** 

—_’N0."7-0.'.-.--- **Parameter** ~~TI~~ **Max. Units** ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 A -——— ~~oo~~ IDM ~~a~~ Pulsed Drain Current ~~sh~~ 130 ~~_ es~~ PD @TA = 25°C Power Dissipation 3.8 W ~~se~~ PD @TC = 25°C Power Dissipation 170 ~~a~~ Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 4.4 V/ns ~~——~~ TJ Operating Junction and -55  to + 175 -——— TSTG Storage Temperature Range °C ~~oo~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~=~~ a Mounting  torqe,  6-32  or M3  screw 10 lbf•in (1.1N•m) ~~eee~~ 

## **Typical SMPS Topologies** 

Telecom 48V input  Active Clamp  Forward Converter 

Notes through are  on page 11 www.irf.com 

1 

## IRFB/IRFS/IRFSL33N15DPbF 

## **Static @ TJ = 25°C (unless otherwise specified)** 

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|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|es|Parameter|ee|Min.|T|ee|yp.|Max.|Units|Conditions|
|V(BR)DSS|es|Drain-to-Source Breakdown Voltage|150|es|es|–––|–––|V|VGS = 0V, ID = 250µA|
|∆V(BR)DSS/∆TJ|ed|Breakdown Voltage Temp. Coefficient|–––     0.18   –––     V/°C    Reference to 25°C, ID = 1mA|©|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|–––|0.056|Ω|VGS = 10V, ID = 20A|
|ee|es|ee|@|
|VGS(th)|ed|Gate Threshold Voltage|3.0|–––|5.5|V|VDS = VGS, ID = 250µA|
|IDSS|Drain-to-Source Leakage Current|––––––|––––––|25025|µA|VVDSDS = 150V, V = 120V, VGSGS = 0V = 0V, TJ = 150°C|
|IGSS|ee|Gate-to-Source Forward LeakageGate-to-Source Reverse Leakage|||||––––––|eee||––––––|||-100100|nA|VVGSGS = 30V = -30V|
|Dynamic @ TJ = 25°C (unless otherwise specified)|
|es|Parameter|ee|Min.|T|ee|yp.|Max.|Units|Conditions|
|gfs|ee|Forward Transconductance|es|14|–––|es|–––|S|VDS = 50V, ID = 20A|
|Qg|Total Gate Charge|–––|60      90                 ID = 20A|
|Qgs|ee|Gate-to-Source Charge|–––|17|26|nC|VDS = 120V|
|Qgd|Gate-to-Drain ("Miller") Charge|–––|27|41|VGS = 10V,|
|ee|ee|
|td(on)|Turn-On Delay Time|–––|13|–––|VDD = 75V|
|Rs|tr|a|Rise Time|ee|–––|38|–––|ns|ID = 20A|ele)|
|a|td(off)|es|Turn-Off Delay Time|–––|23|–––|RG = 3.6Ω|
|tf|Fall Time|–––|21|–––|VGS = 10VΩ|
|ee|Ciss|Input Capacitance|–––|ee|2020|ee|–––|VGS = 0V|°|
|a|Coss|Output Capacitance|–––|400|–––|VDS = 25V|
|Crss|Reverse Transfer Capacitance|–––|91|–––|pF|ƒ = 1.0MHz|
|es|©|
|a|Coss|es|Output Capacitance|–––|2440|–––|VGS = 0V,  VDS = 1.0V,  ƒ = 1.0MHz|
|Coss|Output Capacitance|–––|180|–––|VGS = 0V,  VDS = 120V,  ƒ = 1.0MHz|
|Rs|
|Coss eff.|Effective Output Capacitance|–––|320|–––|VGS = 0V, VDS = 0V to 120V|
|a|es ee|ee|®|
|Avalanche Characteristics|
|Parameter|Typ.|Max.|Units|
|ese|s|
|EAS|Single Pulse Avalanche Energy|–––|330|mJ|
|ese|X|
|IAR|Avalanche Current|–––|20|A|
|ee|©|
|ee|EAR|Repetitive Avalanche Energy|©©|–––|17|mJ|
|Thermal Resistance|
|Parameter|Typ.|Max.|Units|
|Pees|
|RθJC|Junction-to-Case|–––|0.90|
|es|
|eG|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|RθJA|Junction-to-Ambient|–––|62|
|es©|
|RθJA|Junction-to-Ambient|–––|40|
|es>|
|Diode Characteristics|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|33|MOSFET symbol|D|
|—|(Body Diode)|showing  the|
|ISM|Pulsed Source Current|–––|–––|130|integral reverse|G|
|fw—|(Body Diode)|,,Tf|p-n junction diode.|i,|S|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ = 25°C, IS = 20A, VGS = 0V|
|a|trr|es|Reverse Recovery Time|es|–––|150|–––|ns|TJ = 25°C, IF = 20A|°|
|Qrr|Reverse RecoveryCharge|–––|920|–––|nC|di/dt = 100A/µs|
|Sn|ton|PT|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by L|®|S+LD)|
|2|www.irf.com|

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## IRFB/IRFS/IRFSL33N15DPbF 

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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br> 100 5.0V<br>BOTTOM 4.5V<br>Heat<br> 10<br>eH<br> 1 PALL TT<br>SSS 4.5V aH<br>20µs PULSE WIDTH<br>T  = 25J °C<br>0.1 A ie<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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 1000<br>VGS<br>TOP 15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>TL<br> 100<br>“i=.<br> 10 SEagettt<br>4.5V<br>—eH<br>20µs PULSE WIDTH<br>T  = 175J °C<br> 1 AiLd<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

**Fig 2.** Typical Output Characteristics 

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 1000 SS SS S555 5SSSSS==<br>RRR<br>Pit | te et pe pe te<br> 100<br>T  = 175  CJ °<br>[ LT] pwrAREtert tee tT ty<br> 10<br>TYAT iti ttt tt<br>Soc T  = 25  CJ  cccscccococe °<br> 1<br>PIA ttt tt tt<br>SSSSSsoaosasasas V      = 50VDS<br>0.1 FEFCCC R 20µs PULSE WIDTH RE<br>4 5 6 7 8 9 10 11 12<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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3.0<br>ID = 33A<br>TF<br>TTITII.otte<br>2.5 “TTT eerI<br>2.0<br>FCCC CECAI Z|<br>1.5<br>tp Pa<br>{tA<br>1.0 See<br>0.5<br>cesses<br>VGS = 10V<br>0.0 FT EELEEL e h<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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## IRFB/IRFS/IRFSL33N15DPbF 

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20<br>100000 VGS   = 0V,       f = 1 MHZ ID = 20A<br>Ciss    = Cgs + Cgd,   Cds    SHORTED VDS = 120V<br>Crss    = Cgd  16 VDS = 75V<br>10000 “il Coss   = Cds + Cgd Soa VDS = 30V eaan<br>ee Ciss 12 y |<br>1000 ee tr i E YrE<br>Coss 8<br>PT TTT oe | /,<br>100 S U I Crss NG<br>Tite MM 4 |<br>e e e titty ae eecettt vauual<br>FOR TEST CIRCUIT<br>10 PEATE ETE CPT Znnna SEE FIGURE       13<br>0<br>1 10 100 1000 0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V) Q   , Total Gate Charge (nC)G<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br> 1000  1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100<br>=== === ° aa  100 p=aspronte-brtt iig=1| 10us |<br>T  = 175  CJ<br> 10 See) 4042550 er s<br>100us<br>FF ese Te<br>HCA T  = 25  CJ FL °  10 PI | SS N<br> 1 1ms<br> T TCJ = 25  C= 175  C° ° 10ms<br>0.1 PER SE V      = 0 V GS  1 T  Single Pulse H R ttt<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFB/IRFS/IRFSL33N15DPbF 

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35 Ki | tt | tt tT ht tt Vos Rp :<br>30 PSE Ves<br>25 EanPTT NE NEEeee Re l | D.U.T. - vos<br>Pt tT | tT Th ET Tt<br>20 Pt tT | TT TAP TE TT t 10v<br>Eee eeNeee Pulse Width ≤ 1  ys<br>≤ 0.1 %<br>15 See ee eeeNEe Duty Factor<br>P| tT tte tT tT rT TE rT KE 7<br>10 F| || || |Td Td]tT dT dT rTdT | rT| dTrT CIN TN Fig 10a. VDS   Switching Time Test Circuit<br>5 FT tT tT te dt dT dT dT dT {CIN<br>| | t | tt dT rT rT tT TT 90% |<br>0 Pet EE ET |<br>25 50 75 100 125 150 175 |<br>T   , Case TemperatureC (  C)° |<br>10%<br>VGS |<br>\< al >| <p ><br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 1 aasee<br>eea ee ee eeee e e ee eee<br>D = 0.50<br>p TTf Tf ee ee<br>ees] HH Hs] VF<br>B EF<br>rr 0.20 FTE<br>0.1 0.10 eA aA.<br>ee 8) ed| ee re<br>0.05 PDM<br>ea 5, a ee eeeeeel  ee ee<br>0.02 ar SINGLE PULSE ee t1<br>0.01 ta (THERMAL RESPONSE) On eeell t2<br>Notes:<br>1. Duty factor D = t   / t1 2<br>2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFB/IRFS/IRFSL33N15DPbF 

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800<br>15V ID<br>TOP 8.1A<br>14A<br>L DRIVER Ep fe BOTTOM 20A<br>VDS 600 Neneeee<br>N E<br>R G D.U.T +<br>- [V][DD]<br>IAS A 400<br>a 20V GR NGEEEEEEEE<br>tp 0.01Ω<br>* KN ONOEt<br> Unclamped Inductive Test Circuit<br>200<br>PSSNS<br>_ tp V(BR)DSS(BR)DSS TOSSAPt | PSS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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_ tp V(BR)DSS(BR)DSS<br>/ / |<br>|<br>IAS 7<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS QGD<br>VG<br>w y<br>Charge -<br>Fig 13a.   Basic Gate Charge Waveform<br>**----- End of picture text -----**<br>


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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>ae<br>3mA<br>a |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

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## IRFB/IRFS/IRFSL33N15DPbF 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ) Current ==<br>Ty) di/dt /<br>©) D.U.T. VDS Waveform<br>Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  a Forward Drop<br>® Inductor Curent<br>S$<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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7 

## IRFB/IRFS/IRFSL33N15DPbF 

Dimensions are shown in millimeters (inches) 

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10.54 (.415) 3.78 (.149) - B -<br>2.87 (.113) 10.29 (.405) 3.54 (.139) 4.69 (.185)<br>2.62 (.103) - A - 4.20 (.165) 1.32 (.052)<br>| g 1.22 (.048)<br>6.47 (.255)<br>4 6.10 (.240)<br>maey CO =<br>15.24 (.600)<br>14.84 (.584)<br>LEAD ASSIGNMENTS<br>1.15 (.045)     MIN HEXFETLEAD ASSIGNMENTS       1 - GATE  IGBTs, CoPACK<br>ar 1     2    3 1- GATE       2 - DRAIN 1- GATE<br>2- DRAIN       3 - SOURCE 2- COLLECTOR<br>| Ta 3- SOURCE4- DRAIN       4 - DRAIN 3- EMITTER4- COLLECTOR<br>14.09 (.555)<br>13.47 (.530) 4.06 (.160)<br>3.55 (.140)<br>3X [0.93 (.037)] 0.69 (.027) 3X [0.55 (.022)] 0.46 (.018)<br>3X (ip [1.40 (.055)] 1.15 (.045) 0.36  (.014)        M    B   A   M _ 2.92 (.115)<br>2.64 (.104)<br>a, 2.54 (.100) | T<br>**----- End of picture text -----**<br>


2X 

NOTES: 

1  DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.             3  OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 

- 2  CONTROLLING DIMENSION : INCH                                                       4  HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. 

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EXAMPLE: T HIS  IS  AN IRF 1010<br>LOT  CODE 1789<br>AS S EMB LED ON WW 19, 1997 INTE RNAT IONAL PART  NUMBER<br>IN THE AS S EMBLY LINE "C" RECT IFIER<br>LOGO<br>Note:   "P" in assembly line<br>position indicates "Lead-Free" DAT E CODE<br>YEAR 7 =  1997<br>AS S EMBLY<br>LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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## IRFB/IRFS/IRFSL33N15DPbF 

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**----- Start of picture text -----**<br>
Dimensions are shown in millimeters (inches)<br>**----- End of picture text -----**<br>


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T H IS  IS  AN  IR F 5 30 S  W IT H P AR T  N U M B E R<br>L OT  COD E  80 2 4 IN T E R N AT ION AL SY<br>AS S E M B L E D  ON  W W  0 2, 20 00 R E CT IF IE R F 5 30 S<br>IN  T H E  AS S E M B L Y  L IN E  "L " L OGO TéaR 002i<br>pos ition indicates  "L ead-F ree"N ote: "P " in as s embly line ASL OT  COD ES E MB L Y 80i? WU U 7U24 D AT E  COD EYE AR  0 =W E E K  02  20 00<br>L IN E  L<br>**----- End of picture text -----**<br>


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P AR T  N U MB E R<br>IN T E R N AT ION AL i<br>R E CT IF IE R F 530S<br>L OGO IeaRPoo2A<br>80 24 D AT E  COD E<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y cog<br>P R OD U CT  (OP T ION AL )<br>L OT  COD E V?U 7U YE AR  0 =  2000<br>W E E K  02<br>A =  AS S E MB L Y S IT E  COD E<br>**----- End of picture text -----**<br>


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## IRFB/IRFS/IRFSL33N15DPbF 

## TO-262 Package Outline 

## TO-262 Part Marking Information 

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E XAMP L E : T H IS  IS  AN  IR L 3103L<br>L OT  COD E  1789 P AR T  N U MB E R<br>AS S E MB L E D  ON  WW 19, 1997IN  T H E  AS S E MB L Y L INE  "C" INT E R N AT IONALR E CT IF IE RL OGO a IeaRIRL3103L719C<br>N ote: "P " in as s embly line 17 89 DAT E  COD E<br>pos ition indicates  "L ead-F ree" AS S E MB L Y YE AR  7 =  1997<br>L OT  CODE WE E K  19<br>L INE  C<br>O R<br>P AR T  N U MB E R<br>INT E R N AT IONAL |<br>R E CT IF IE R IRL3103L<br>L OGO TeaRP719A<br>D AT E  CODE<br>17 89<br>P  =  D E S IGN AT E S  L E AD -F R E E<br>AS S E MB L Y P R OD U CT  (OP T IONAL )<br>L OT  CODE YE AR  7 =  1997<br>WE E K  19<br>A =  AS S E MB L Y S IT E  CODE<br>**----- End of picture text -----**<br>


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## IRFB/IRFS/IRFSL33N15DPbF 

## D[2] Pak Tape & Reel Infomation 

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**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>4.10 (.161)3.90 (.153) 1.60 (.063)1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>ia Le - ; Tv<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 15.42 (.609)15.22 (.601) 24.30 (.957)23.90 (.941)<br>TRL<br>— ire 1.75 (.069) TV.<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>cape 16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>oT 4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER.3.   DIMENSION MEASURED @ HUB.4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039)24.40 (.961) Lo 3 4<br>**----- End of picture text -----**<br>


® Repetitive rating;  pulse width limited by ® Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. 

Starting TJ = 25°C, L = 1.7mH 

RG = 25Ω, IAS = 20A. 

6) ISD ≤ 20A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

® Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS © This is only applied to TO-220AB package 

@ This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 07/04 

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11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFSL33N15DPBF/power-mosfet-n-channel-150-v-33-a-0056-ohm-to-262)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfsl33n15dpbf/n-ch-mosfet-150v-33a-to-262/dp/1385506)
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