# Power MOSFET, N Channel, 75 V, 240 A, 1700 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2725993/)

**URL**: https://novapart.co/products/IRFS7730TRL7PP/power-mosfet-n-channel-75-v-240-a-1700-ohm-to-263
**SKU**: IRFS7730TRL7PP
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5000
**Stock**: 500+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 240A |
| Drain Source On State Resistance | 1700µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725993/)

Strong _IR_ FET™ IRFS7730-7PPbF 

## **Application** 

HEXFET[® ] Power MOSFET 

-  Brushed motor drive applications 

-  BLDC motor drive applications 

-  Battery powered circuits 

-  Half-bridge and full-bridge topologies 

-  Synchronous rectifier applications 

-  Resonant mode power supplies 

-  OR-ing and redundant power switches 

||||D|**VDSS**|**75V**|
|---|---|---|---|---|---|
|||||||
|G||||**RDS(on)typ.**<br>**max**|**1.70m**<br>**2.00m**|
||||S|**ID (Silicon Limited)**<br>**ID (Package Limited)**|**269A**<br>**240A**|



-  DC/DC and AC/DC converters 

-  DC/AC inverters 

## **Benefits** 

-  Improved  gate, avalanche and dynamic dV/dt ruggedness 

-  Fully characterized capacitance and avalanche SOA 

-  Enhanced body diode dV/dt and dI/dt capability 

-  Lead-free, RoHS compliant 

|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



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Base Part Number  Package Type   Standard Pack  Complete Part Number<br>Form  Quantity<br>Tube  50  IRFS7730-7PPbF<br>IRFS7730-7PPbF  D2Pak-7PIN<br>Tape and Reel Left  800  IRFS7730TRL7PP<br>8 300<br>ID = 100A Limited By Package<br>250<br>[ih<br>6 ) | be<br>TJ = 125°C 200<br>4 ee 150 ee<br>100<br>2 ir NN<br>TJ = 25°C 50<br>0 Torr 0 oNPt Tt [ty]<br>4 6 8 10 12 14 16 18 20<br>25 50 75 100 125 150 175<br>VGS, Gate -to -Source Voltage  (V)  TC , Case Temperature (°C)<br>)<br><br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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## **Absolute Maximum Rating** 

|**Absolute Maximum Rating**||||
|---|---|---|---|
|**Symbol**<br>**Parameter**|**Max.**||**Units**|
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|269|||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)<br>ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Package Limited)|190<br>240||A|
|IDM<br>Pulsed Drain Current|990|||
|PD @TC= 25°C<br>Maximum Power Dissipation|375||W|
|Linear DeratingFactor|2.5||W/°C|
|VGS<br>Gate-to-Source Voltage|± 20||V|
|TJ<br>TSTG<br>Operating Junction and<br>Storage Temperature Range|-55  to + 175||°C|
|SolderingTemperature, for 10 seconds(1.6mm from case)|300|||
|**Avalanche Characteristics**||||
|**Symbol**<br>**Parameter**<br>**Max.**<br>EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>464<br>EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>897<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>EAR<br>Repetitive Avalanche Energy<br>**Thermal Resistance**<br>~~— —$—~~|||**Units**<br>A<br>mJ<br>mJ|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.40<br>°C/W<br>RJA<br>Junction-to-Ambient<br>–––<br>40<br>~~——————~~||||
|**Static@ TJ = 25°C(unless otherwise specified)**||||
|**Symbol**<br>**Parameter**<br>**Min.**<br>**Typ. Max. Units**|**. Max. Units**<br>**Conditions**|||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>75<br>–––<br>–––|V<br>VGS= 0V,ID= 250µA|||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>40<br>––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C,I|ID= 1mA|= 1mA|
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>1.70 2.00|mVGS= 10V,ID= 100A|||
|–––<br>2.20 –––|mVGS= 6.0V,ID= 50A|||
|VGS(th)<br>Gate Threshold Voltage<br>2.1<br>–––<br>3.7|V<br>VDS= VGS,ID= 250µA|||
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>1.0<br>µA<br>VDS= 75 V,VGS= 0V<br>–––<br>–––<br>150<br>VDS= 75V,VGS= 0V,TJ=125°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-Source Reverse Leakage<br>–––<br>––– -100<br>VGS= -20V<br>RG<br>Gate Resistance<br>–––<br>1.9<br>–––<br><br>~~—<—<—<_~~||||
|**Notes:**||||
|Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A.||||
|Note that current limitations arising from heating of the device leads may occur with some lead mounting||||
|arrangements. (Refer to AN-1140)||||



- Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 93µH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  1575A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 42A, VGS =10V. 

-   When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

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## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~sD~~<br>~~es~~|**Parameter**<br>~~sD~~|**Min.**<br>~~sD~~<br>~~GD~~|**Typ. Max. Units**<br>~~sD~~<br>~~GO~~<br>~~GO~~|**. Max. Units**<br>~~sD~~<br>~~OO~~<br>~~OO~~|**. Max. Units**<br>~~sD~~<br>~~OO~~<br>~~OO~~|**. Max. Units**<br>**Conditions**<br>~~sD~~|
|---|---|---|---|---|---|---|
|gfs<br>~~GD~~<br>~~es~~|Forward Transconductance<br>~~GD~~|223<br>~~GD ~~<br>~~GD~~|–––<br> ~~GO~~<br>~~GD~~<br>~~GO~~|–––<br>~~OO~~<br>~~GD~~<br>~~OO~~|S<br>~~OO~~<br>~~GD~~<br>~~OO~~|VDS= 10V,ID=100A<br>~~GD~~|
|Qg<br>~~es~~|Total Gate Charge|–––|285<br>~~GO~~|428<br>~~OO~~|nC<br>~~OO~~|ID= 100A<br>VDS= 38V<br>VGS= 10V|
|Qgs<br>~~es~~|Gate-to-Source Charge|–––|62<br>~~GO~~|–––<br>~~OO~~|||
|Qgd<br>~~a~~|Gate-to-Drain Charge|–––|86|–––|||
|Qsync|Total Gate Charge Sync.(Qg-Qgd)|–––|199|–––|||
|td(on)<br>~~a~~<br>~~es~~|Turn-On DelayTime<br>~~a~~<br>|–––<br>~~a~~|20<br>~~a~~|–––<br>~~a~~|ns|VDD= 38V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V|
|tr<br><br>~~es~~|Rise Time<br>~~a~~<br>|–––<br>~~a~~|90<br>~~a~~|–––<br>~~a~~|||
|td(off)<br><br>~~esee~~|Turn-Off DelayTime<br>~~a~~<br>~~ee~~|–––<br>~~a~~|182<br>~~a~~|–––<br>~~a~~|||
|tf<br>~~ee~~|Fall Time<br>~~ee~~|–––|91|–––|||
|Ciss<br>~~ee~~|Input Capacitance<br>~~ee~~|––– 13970 –––|––– 13970 –––|––– 13970 –––|pF<br>~~es~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––|1135|–––|||
|Crss<br>~~ee~~|Reverse Transfer Capacitance|–––|720|–––|||
|Coss eff.(ER)<br>~~ee~~<br>~~es~~|Effective Output Capacitance(EnergyRelated)<br>~~FD~~|–––<br>~~FD~~|1048<br>~~FD~~|–––<br>~~FD~~||VGS= 0V,VDS= 0V to 60V|
|Coss eff.(TR)<br>~~ee~~<br>~~es~~|Output Capacitance(Time Related)<br>~~FD~~|–––<br>~~FD~~|1283<br>~~FD~~|–––<br>~~FD~~||VGS= 0V,VDS= 0V to 60V|
|**Diode Characteristics**<br>~~esFDes~~<br>~~OO~~|||||||
|**Symbol**<br>~~O~~|**Parameter **<br>~~O~~|**Min.**<br>~~Oe~~|**Typ. M**<br>~~e~~|**. Max.**<br>~~e~~<br>~~OO~~|**Units**<br>~~e~~<br>~~OO~~|**Conditions**<br>~~e~~|
|IS<br>~~O~~<br>~~a~~|Continuous Source Current<br>(Body Diode)<br>~~O~~<br>~~a~~|–––<br>~~Oe~~<br>~~a~~|––– 269<br>~~e~~<br>~~a~~|––– 269<br>~~e~~<br>~~OO~~<br>~~a~~|A<br>~~e~~<br>~~OO~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~e~~<br>~~a~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(BodyDiode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|990<br>~~a~~|||
|VSD<br>~~a~~<br>~~ee~~|Diode Forward Voltage<br>~~a~~<br>~~Ge~~<br>~~ee~~|–––<br>~~a~~<br>~~Ge~~<br>~~ee~~|–––<br>~~a~~<br>~~GO~~<br>~~ee~~|1.2<br>~~a~~<br>~~GO~~<br>~~ee~~|V<br>~~a~~<br>~~ee~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~<br>~~ee~~|
|dv/dt<br>~~ee~~<br>~~pf~~|Peak Diode Recoverydv/dt<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~<br>|11<br>~~ee~~<br>|–––<br>~~ee~~<br>|V/ns T<br>~~ee~~<br>|V/ns TJ= 175°C,IS=100A,VDS= 75V<br>~~ee~~|
|trr<br>~~ee~~<br>~~pf~~|Reverse Recovery Time<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~<br>|42<br>~~ee~~<br>|–––<br>~~ee~~<br>|ns<br>~~ee~~<br>|TJ =25°CVDD= 64V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C <br>~~ee~~<br>~~a~~|
|||–––<br>~~ee~~<br>|49<br>~~ee~~<br>|–––<br>~~ee~~<br>|||
|Qrr<br>~~pfee~~|Reverse Recovery Charge<br>~~pfee~~|–––<br>~~ee~~|63<br>~~ee~~|–––<br>~~ee~~|nC<br>~~ee~~||
|||–––<br>~~ee~~|88<br>~~ee~~|–––<br>~~ee~~|||
|IRRM<br>~~ee~~<br>~~a~~|Reverse Recovery Current<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|2.4<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~|A<br>~~ee~~<br>~~a~~||



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10000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>1000 6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>100 } 100 Y\_fi 4.5V<br>4.5V<br>10<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 Pe 10 V<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 3.0<br>ID = 100A<br>VGS = 10V<br>2.5<br>100<br>TJ = 175°C<br>YA tie<br>2.0<br>10 TJ = 25°C<br>1.5<br>1 HA TTLEEP An<br>1.0<br>| VDS = 25V a<br>60µs PULSE WIDTH<br>0.1 AA| | ) |)  RE 0.5<br>2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100120140160180<br>VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID= 100A<br>C rss    = C gd  12.0<br>Coss  = Cds + Cgd VDS= 60V<br>10000 C iss 10.0 V V DS DS = 38V = 15V<br>8.0<br>C oss<br>6.0<br>Sei iil tf<br>1000<br>Crss 4.0<br>Ba seul a7 oon<br>2.0<br>100 0.0<br>CWT = WEEREEE<br>1 10 100 0 50 100 150 200 250 300 350<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100 TJ = 175 ° C<br>10 A TJ = 25°C<br>Af<br>1 fp<br>V GS  = 0V<br>0.1 Pp<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage<br>95<br>Id = 1.0mA<br>90 all<br>85<br>at<br>80<br>HTH<br>75<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

**Fig 11.** Drain-to-Source Breakdown Voltage 

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1000<br>100µsec<br>1msec<br>100<br>Limited by<br>package<br>10 OPERATION<br>See IN THIS  as ae<br>AREA<br>1 LIMITED BY  ARS<br>RDS(on) 10msec<br>So<br>0.1 Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>0.01 =<br>0.1 1 10<br>VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>-10 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Coss Stored Energy 

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4.0<br>3.5 Vgs = 5.5V<br>Vgs = 6.0V<br>TE<br>Vgs = 7.0V<br>Vgs = 8.0V<br>3.0<br>Vgs = 10V<br>‘Naezae<br>2.5<br>2.0<br>SEECCRSEACE<br>1.5 TLEELLELET<br>1.0 TL ELEL ELE<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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1<br>D = 0.50<br>0.1<br>0.20<br>aa 0.10 a<br>0.05<br>0.01 0.02<br>0.01<br>FT<br>0.001<br>SINGLE PULSE<br>a aN Notes:<br>( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>oH<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming Tj = 150°C and<br>Tstart = 25°C (Single Pulse)<br>100<br>SST<br>10<br>Allowed avalanche Current vs avalanche<br>SC pulsewidth, tav, assuming j = 25°C and<br>Tstart = 150°C.<br>moonlime<br>1<br>1.0E-06 | [hom] 1.0E-05 1.0E-04 LT 1.0E-03 1.0E-02<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>500<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>400 NEE I D  = 100A 1.Avalanche failures assumption:  Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>300 2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>NNT    exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>200<br>INNATEEL 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>100 6. Iav = Allowable avalanche current.<br>PSSST 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 15, 16).<br>0 LLL LENS tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZT/ ZT/ ZthJC ) = T/ ZT/ ZT/ ZthJC<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) thJC(D, tav) = Transient thermal resistance, see Figures 13) (D, tav) = Transient thermal resistance, see Figures 13) av) = Transient thermal resistance, see Figures 13) ) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZT/ ZT/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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IRFS7730-7PPbF<br>IR<br>4.0 20<br>IF = 60A<br>3.5 VR = 64V<br>Pa 15 T J = 25°C ry<br>3.0<br>PRCESSEE TJ = 125°C To<br>2.5<br>C ID AS  = 250µA PER 10 Pee<br>2.0 ID = 1.0mA<br>ID = 1.0A<br>APSE<br>1.5 SEeAEENG Beaae<br>5<br>1.0<br>P EP LE Cann<br>0.5 0<br>-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>Fig 17.   Threshold Voltage vs. Temperature  Fig 18.   Typical Recovery Current vs. dif/dt<br>20 500<br>IF = 100A IF = 60A<br>VR = 64V VR = 64V<br>T = 25°C 400<br>15 J TJ = 25°C<br>TJ = 125°C TJ = 125°C<br>ae 300 pasar<br>GES Eee<br>10<br>200<br>5<br>aa 100 Bean<br>ATT) = bees<br>0 7A | fd 0 nan<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/µs) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>IRRM (A) QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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500<br>IF = 100A<br>VR = 64V<br>400<br>TJ = 25°C<br>TJ = 125°C<br>to|<br>300<br>200<br>| pep<br>100 Beane<br>0 Tt tf<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRFS7730-7PPbF 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>< tp ><br>IAS<br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>|<br>Vgs(th) '<br>hoot i '<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFS7730-7PPbF 

**D[2] Pak-7Pin  Package Outline** (Dimensions are shown in millimeters (inches)) 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **D[2] Pak-7Pin  Part Marking Information** 

## **D2Pak-7Pin Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~I6aR~~ 

IRFS7730-7PPbF ~~[~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D2Pak-7Pin|MSL1|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/7/2014|<br>Updated EAS (L =1mH)= 897mJ  on page 2<br><br>Updated note 9  “Limited byTJmax,startingTJ= 25°C,L = 1mH,RG= 50,IAS= 42A,VGS=10V” onpage 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

11 www.irf.com        © 2014 International Rectifier ~~c=~~ 

~~_~~ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS7730TRL7PP/power-mosfet-n-channel-75-v-240-a-1700-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs7730trl7pp/mosfet-n-ch-75v-240a-to-263/dp/2725993)
---

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