# Power MOSFET, N Channel, 60 V, 173 A, 3300 µohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2406527/)

**URL**: https://novapart.co/products/IRFS7537PBF/power-mosfet-n-channel-60-v-173-a-3300-ohm-to
**SKU**: IRFS7537PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8870
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:173A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00275ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 230W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 173A |
| Drain Source On State Resistance | 3300µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2406527/)

Strong _IR_ FET™ IRFB7537PbF IRFS7537PbF IRFSL7537PbF 

## International 

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HEXFET [® ] Power MOSFET<br>D VDSS  60V<br>RDS(on) typ. 2.75m <br>G<br>            max  3.30m <br>S ID   173A<br>==<br>D  D<br>S  S<br>S<br>D  G<br>G  G  [D ]<br>TO-220AB  D [2] Pak  TO-262<br>IRFB7537PbF  IRFS7537PbF  IRFSL7537PbF<br>G  D  S<br>Gate  Drain  Source<br>a<br>Orderable Part Number<br>Quantity<br>50  IRFB7537PbF<br>50  IRFSL7537PbF<br>50  IRFS7537PbF<br>800  IRFS7537TRLPbF<br>200<br>150<br>SURREE<br>100<br>TAN<br>TTP NC<br>50<br>:<br>0 LL ELLA<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

|||~~a~~|**G**<br>Gate<br>~~a~~|**D**<br>**S**<br>Drain<br>Source<br>~~a~~|
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|||**Form**|**Quantityy**||
|IRFB7537PbF|TO-220|Tube|50|IRFB7537PbF|
|IRFSL7537PbF|TO-262|Tube|50|IRFSL7537PbF|
|IRFS7537PbF|D2-Pak|Tube<br>Tape and Reel Left|50<br>800|IRFS7537PbF<br>IRFS7537TRLPbF|



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12<br>ID = 100A<br>TLL<br>10<br>8<br>CEE<br>6 T J  = 125°C<br>CAAT<br>4<br>SEE<br>2 CER TJ   EEE = 25 ° C<br>0<br>CCECEL LCE<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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IRFB/S/SL7537PbF 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**||**Max.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V||173|||
||ID @TC= 100°C|Continuous Drain Current,VGS @10V||122||A|
||IDM|Pulsed Drain Current||700|||
||PD @TC= 25°C|Maximum Power Dissipation||230||W|
|||Linear DeratingFactor||1.5||W/°C|
||VGS|Gate-to-Source Voltage||± 20||V|
||TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|-55  to + 175||°C|
|||Soldering Temperature, for 10 seconds (1.6mm from case)||300|||
|||MountingTorque, 6-32 or M3 Screw|10 lbf·in(1.1 N·m)||||
||**Avalanche Characteristics**||||||
|EAS<br>SinglePulseAvalancheEnergy <br>270<br>mJ<br>EAS (L=1mH)<br>Single Pulse Avalanche Energy<br>554<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>~~—SS=EEu—~~|||||||
||**Thermal Resistance**||||||
||**Symbol**|**Parameter**|**Typ.**||**Max.**|**Units**|
||RJC|Junction-to-Case|–––||0.65||
||RCS<br>RJA|Case-to-Sink,Flat Greased Surface<br>0.50<br>Junction-to-Ambient(TO-220) <br>–––|||–––<br>62|°C/W|
||RJA|Junction-to-Ambient(PCB Mount) (D2-Pak)|–––||40||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|40|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|2.75|3.30|m|VGS= 10V,ID= 100A|
|||–––|3.50|–––||VGS=6.0V,ID=50A|
|VGS(th)|Gate Threshold Voltage|2.1|–––|3.7|V|VDS =VGS, ID =150µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS=60V,VGS=0V|
|||–––|–––|150||VDS =60V,VGS =0V,TJ =125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-SourceReverseLeakage|–––|–––|-100||VGS= -20V|
|RG|Gate Resistance|–––|2.0|–––|||



## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 54µH, RG = 50, IAS = 100A, VGS =10V. 

-  ISD  100A, di/dt  1130A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques 

- refer to application note #AN-994.:  http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 33A, VGS =10V. 

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## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~<br>~~a~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~es~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|190|–––|–––<br>~~OO~~|S<br>~~OO~~|VDS= 10V,ID=100A|
|Qg<br>~~a~~|Total Gate Charge|–––|142|210|nC|ID= 100A<br>VDS= 30V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|36|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|43|–––|||
|Qsync<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|99|–––|||
|td(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|15<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 30V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|105<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|82<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|84|–––|||
|Ciss<br>~~es~~<br>~~a~~|Input Capacitance|–––|7020|–––|pF<br>~~es~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~es~~<br>~~a~~|Output Capacitance|–––|640|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance|–––|395|–––|||
|Coss eff.(ER)<br>~~a~~<br>~~|~~<br>~~GO~~|Effective Output Capacitance<br>(Energy Related)<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~|665<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~||VGS= 0V, VDS = 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~GO~~|Output Capacitance(Time Related)<br>~~GO~~|–––<br>~~GO~~|880<br>~~GO~~|–––<br>~~GO~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**<br>~~GO es~~<br>~~esOD~~|||||||
|**Symbol**<br>~~es~~|**Parameter **<br>~~OD~~|**Min.**<br>~~OD~~|**Typ. **<br>~~OD~~|**Max.**<br>~~OD~~|**Units**<br>~~OD~~|**Conditions**<br>~~OD~~|
|IS<br>~~es~~<br>~~a~~|Continuous Source Current<br>(BodyDiode)<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|173<br>~~OD~~<br>~~a~~|A<br>~~OD~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~OD~~<br>~~a~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|700<br>~~a~~|||
|VSD<br>~~a~~<br>~~po~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~po~~|Peak Diode Recoverydv/dt|–––|10|–––|V/ns T|V/ns TJ= 175°C,IS=100A,VDS= 60V|
|trr<br>~~po~~<br>~~a ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|39<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|41<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~a ee~~<br>~~pf~~|Reverse Recovery Charge<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~|46<br>~~ee~~|–––<br>~~ee~~|nC<br>~~ee~~||
|||–––|56|–––|||
|IRRM<br>~~pf~~<br>~~a~~|Reverse Recovery Current<br>~~pf~~|–––|2.1|–––|A||



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IRFB/S/SL7537PbF ~~OT~~ 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V<br>BOTTOM 4.5V<br>L—<br>4.5V<br>10<br>60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>100<br>TA T J  = 175°C TJ = 25°C<br>10<br>1<br>ff<br>VDS = 25V<br>60µs PULSE WIDTH<br>iif<br>0.1<br>2 3 4 5 6 7<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Transfer Characteristics 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>LE<br>100 4.5V<br>60µs PULSE WIDTH<br>Tj = 175°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>2.4<br>ID = 100A<br>VGS = 10V<br>2.0<br>of 1.6 ae<br>1.2<br>0.80.4 e4nnnTELL<br>-60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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100000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 100A<br>12.0<br>C rss    = C gd  VDS= 48V<br>Coss  = Cds + Cgd 10.0 V DS = 30V<br>10000 VDS= 12V<br>et Ciss<br>aaa 8.0 vn<br>C oss 6.0<br>1000 iho C rss<br>4.0<br>Biii l l te<br>2.0<br>100 BA Aliete 0.0 oapo<br>0.1 1 10 100 0 50 100 150<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 4 www.irf.com © 2014 International Rectifier ~~ss ©~~ 

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IRFB/S/SL7537PbF ~~.........~~ 

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1000<br>100 TJ = 175°C aan<br>TJ = 25°C<br>10<br>inne<br>1<br>VGS = 0V<br>0.1<br>0.1 0.4 0.7 1.0 1.3 1.6 1.9 2.2<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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78<br>Id = 1.0mA<br>ans<br>7674 ef ft |<br>| | Kf<br>72<br>70 | KLtf<br>68 PY]| | ft<br>ZG<br>6664 Ff} tf tf<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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1000<br>10 0 µsec<br>See<br>100<br>1msec<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>10<br>sc tmere<br>1<br>Tc = 25°C 10msec<br>Tj = 175°C DC<br>Single Pulse<br>0.1<br>0.1 1 10<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 10 20 30 40 50 60<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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5.1<br>VGS = 5.5V<br>VGS = 6.0V<br>4.6 VGS = 7.0V<br>VGS = 8.0V NY<br>VGS = 10V<br>4.1<br>3.6<br>TE<br>ES<br>3.12.6 es— ee ee<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

5 ~~_—~~ 

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IRFB/S/SL7537PbF ~~LT~~ 

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1<br>TM.<br>D = 0.50<br>Eo 0.20 eerLUT [II<br>0.1<br>0.10<br>0.05<br>0.02<br>0.01<br>0.01<br>SE<br>SINGLE PULSE<br>em TVET<br>0.001 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>SME AL A<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150 ° C and<br>Tstart =25°C (Single Pulse)<br>TM<br>100<br>10<br>Be a Se<br>1<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>ener<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>300<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>250 I D  = 100A 1.Avalanche failures assumption:<br>tp<br>Purely a thermal phenomenon and failure occurs at a<br>200 WN bee temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>150    exceeded.<br>NTT 3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>100 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>PSSST 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>50 SEERAASASUEE 6. Iav = Allowable avalanche current.<br>7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>CPSC     (assumed as 25°C in Figure 14, 15).<br>0<br>tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C) ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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## ~~TOR~~ 

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4.5<br>4.0<br>TT EEE EL<br>3.5<br>Cooeeeeeee<br>3.0<br>AERA<br>2.5<br>U| SS LPR<br>2.0 ID = 150µA<br>ID = 250µA<br>ID = 1.0mA<br>1.5<br>ID = 1.0A<br>1.0 ZaGRNNGPt LLL ING<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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12<br>IF = 60A<br>VR = 51V<br>9 T J = 25°C aes<br>TJ = 125°C oe<br>Bae<br>6<br>3<br>0 ry yy<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
15<br>IF = 100A<br>VR = 51V<br>12<br>TJ = 25°C<br>TJ = 125°C<br>A<br>9<br>a<br>6 ae ae<br>3<br>yt<br>0 "Lt tb<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
225<br>IF = 60A<br>200<br>VR = 51V<br>175 T J = 25°C<br>TJ = 125°C<br>150 OEE<br>125 moa<br>ee<br>100<br>75<br>50 eat<br>25 ATE<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
225<br>IF = 100A ToT<br>200<br>VR = 51V<br>175 T J = 25°C<br>TJ = 125°C<br>TTF<br>150<br>nea<br>125<br>ToT<br>100<br>eae<br>75<br>A TT<br>50<br>a<br>25<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 ~~—~~ 

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## IRFB/S/SL7537PbF ~~LT~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

**==> picture [157 x 87] intentionally omitted <==**

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs /, (th) : '|<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFB/S/SL7537PbF ~~LO~~ 

## ~~IR~~ 

**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

**==> picture [487 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFB/S/SL7537PbF ~~LO~~ 

## ~~IR~~ 

**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

**==> picture [370 x 246] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C"<br>LOGO<br>DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>|<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

**==> picture [296 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S j s<br>IN THE ASSEMBLY LINE "L" LOGO I@R ~<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>a PRODUCT (OPTIONAL)<br>ASSEMBLY WU<br>LOT CODE vg YEAR 0 =  2000<br>U U WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFB/S/SL7537PbF ~~a~~ 

## **D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [365 x 386] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
||TO-262|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

- **Date**  Updated EAS (L =1mH)  = 554mJ  on page 2 

## **Comments** 

|||Updated EASAS (L =1mH)  = 554mJ  on page 2= 554mJ  on page 2|
|---|---|---|
|10/07/14||Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 33A, VGS=10V”.  on page 2|
|||Updated package outline on page 9,10,11,12.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ © 2014 International Rectifier Submit Datasheet Feedback                   October 7, 2014                    October 7, 2014 ~~_~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFS7537PBF/power-mosfet-n-channel-60-v-173-a-3300-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs7537pbf/mosfet-n-ch-60v-173a-to-263-3/dp/2406527)
---

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