# Power MOSFET, N Channel, 60 V, 295 A, 2000 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2709996/)

**URL**: https://novapart.co/products/IRFS7530TRLPBF/power-mosfet-n-channel-60-v-295-a-2000-ohm-to-263
**SKU**: IRFS7530TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9830
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:295A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET HEXFET Series |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 295A |
| Drain Source On State Resistance | 2000µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2709996/)

Strong _IR_ FET™ IRFB7530PbF IRFS7530PbF IRFSL7530PbF 

## International 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

- DC/DC and AC/DC converters 

- DC/AC Inverters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

HEXFET[® ] Power MOSFET 

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D VDSS  60V<br>RDS(on) typ. 1.65m <br>G             max  2.00m <br>ID (Silicon Limited)  295A <br>S<br>== ID (Package Limited) 195A<br>D  D<br>S<br>D  S  S<br>G  G<br>G  [D ]<br>TO-220AB  D [2] Pak  TO-262<br>IRFB7530PbF  IRFS7530PbF  IRFSL7530PbF<br>**----- End of picture text -----**<br>


|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



|**Base part number**|**Package Type**|**Standard Pack**|**Standard Pack**|**Orderable Part Number**|
|---|---|---|---|---|
|||**Form**|**Quantity**||
|IRFB7530PbF|TO-220|Tube|50|IRFB7530PbF|
|IRFSL7530PbF|TO-262|Tube|50|IRFSL7530PbF|
|IRFS7530PbF|D2-Pak|Tube<br>Tape and Reel Left|50<br>800|IRFS7530PbF<br>IRFS7530TRLPbF|



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7<br>ID = 100A<br>6<br>AEE LL<br>5<br>WEE LLL<br>4<br>WEE LLLLL TJ = 125°C<br>3 INET<br>TJ = 25°C<br>2 SIN<br>| EEECe<br>1<br>2 4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

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300<br>250 Limited by package<br>Pe)<br>200<br>EESS<br>150<br>PPT PN<br>100 Pt} }ENG<br>50 PEEL LIN<br>0 Pit]fl<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 ~~—~~ 

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IRFB/S/SL7530PbF ~~fC~~ 

## ~~IR~~ 

## **Absolute Maximum Rating** 

||**Symbol**|**Parameter**|||**Max.**|**Max.**||**Units**|
|---|---|---|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)|||295||||
||ID @TC= 100°C<br>ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)|||208<br>195|||A|
||IDM|Pulsed Drain Current|||760||||
||PD @TC= 25°C|Maximum Power Dissipation|||375|||W|
|||Linear DeratingFactor|||2.5|||W/°C|
||VGS|Gate-to-Source Voltage|||± 20|||V|
||TJ<br>TSTG|Operating Junction and<br>StorageTemperatureRange||-55  to + 175|-55  to + 175|||°C|
|||SolderingTemperature,for 10 seconds (1.6mm fromcase)|||300||||
|||MountingTorque, 6-32 or M3 Screw||10 lbf·in(1.1 N·m|||1.1 N·m)||
||**Avalanche Characteristics**||||||||
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy<br>**Thermal Resistance**<br> **Symbol**<br>**Parameter**<br>~~——— =~~||||524<br>mJ<br>1025<br>See Fig 15, 16, 23a, 23b<br>A<br>mJ<br>**Typ.**<br>**Max.**<br>**Units**<br>~~=~~|||||
||RJC|Junction-to-Case||–––|||0.40||
||RCS<br>RJA|Case-to-Sink,Flat Greased Surface<br>Junction-to-Ambient(TO-220)||0.50<br>–––|||–––<br>62|°C/W|
||RJA|Junction-to-Ambient(PCB Mount) (D2-Pak)||–––|||40||



## **Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|47|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 1mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|1.65|2.00|m|VGS= 10V,ID= 100A|
|||–––|2.10|–––||VGS=6.0V,ID=50A|
|VGS(th)|GateThresholdVoltage|2.1|–––|3.7|V|VDS= VGS,ID= 250µA|
|GS(th)<br>IDSS|Drain-to-Source Leakage Current|–––|–––|1.0|µA|VDS =60 V, VGS =0V|
|||–––|–––|150||VDS=60V,VGS=0V,TJ=125°C|
|IGSS|Gate-to-Source Forward Leakage|–––|–––|100|nA|VGS= 20V|
||Gate-to-Source Reverse Leakage|–––|–––|-100||VGS = -20V|
|RG|Gate Resistance|–––|2.1|–––|||



## **Notes:** 

-  Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 105µH, RG = 50, IAS = 100A, VGS =10V. 

-  ISD  100A, di/dt  1338A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.:  http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 45A, VGS =10V. 

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2 

IRFB/S/SL7530PbF ~~[~~ 

## ~~ItséR~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~<br>~~a~~|**Parameter**<br>~~es~~|**Min.**<br>~~es~~|**Typ. **<br>~~es~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>~~es~~<br>~~OO~~|**Max. Units**<br>**Conditions**<br>~~es~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance|242|–––|–––<br>~~OO~~|S<br>~~OO~~|VDS= 10V,ID=100A|
|Qg<br>~~a~~|Total Gate Charge|–––|274|411|nC|ID= 100A<br>VDS= 30V<br>VGS= 10V|
|Qgs|Gate-to-Source Charge|–––|64|–––|||
|Qgd<br>~~a~~<br>~~es~~|Gate-to-Drain Charge|–––|83|–––|||
|Qsync<br>~~a~~<br>~~es~~<br>~~es~~|Total Gate Charge Sync.(Qg–Qgd)|–––|191|–––|||
|td(on)<br>~~es~~<br>~~es~~<br>~~ee~~|Turn-On DelayTime<br>~~ee~~|–––<br>~~ee~~|52<br>~~ee~~|–––<br>~~ee~~|ns|VDD= 30V<br>ID= 100A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~es~~<br>~~ee~~|Rise Time<br>~~ee~~|–––<br>~~ee~~|141<br>~~ee~~|–––<br>~~ee~~|||
|td(off)<br>~~ee~~|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~|172<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~es~~<br>~~a~~|Fall Time|–––|104|–––|||
|Ciss<br>~~es~~<br>~~a~~|Input Capacitance|–––|13703|–––|pF<br>~~es~~|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~es~~<br>~~a~~|Output Capacitance|–––|1266|–––|||
|Crss<br>~~a~~|Reverse Transfer Capacitance|–––|806|–––|||
|Coss eff.(ER)<br>~~a~~<br>~~|~~<br>~~GO~~|Effective Output Capacitance<br>(Energy Related)<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~|1267<br>~~|~~<br>~~GO~~|–––<br>~~|~~<br>~~GO~~||VGS= 0V, VDS = 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~GO~~|Output Capacitance(Time Related)<br>~~GO~~|–––<br>~~GO~~|1630<br>~~GO~~|–––<br>~~GO~~||VGS= 0V,VDS = 0V to 48V|
|**Diode Characteristics**<br>~~GO es~~<br>~~esOD~~|||||||
|**Symbol**<br>~~es~~|**Parameter **<br>~~OD~~|**Min.**<br>~~OD~~|**Typ. **<br>~~OD~~|**Max.**<br>~~OD~~|**Units**<br>~~OD~~|**Conditions**<br>~~OD~~|
|IS<br>~~es~~<br>~~a~~|Continuous Source Current<br>(BodyDiode)<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|–––<br>~~OD~~<br>~~a~~|295<br>~~OD~~<br>~~a~~|A<br>~~OD~~<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~OD~~<br>~~a~~|
|ISM<br>~~a~~|Pulsed Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|760<br>~~a~~|||
|VSD<br>~~a~~<br>~~po~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~po~~|Peak Diode Recoverydv/dt|–––|8.1|–––|V/ns T|V/ns TJ= 175°C,IS=100A,VDS= 60V|
|trr<br>~~po~~<br>~~a ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|51<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C <br>~~a~~|
|||–––<br>~~ee~~|54<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~a ee~~<br>~~pf~~|Reverse Recovery Charge<br>~~ee~~<br>~~pf~~|–––<br>~~ee~~<br>|86<br>~~ee~~<br>|–––<br>~~ee~~<br>|nC<br>~~ee~~<br>||
|||–––<br>|102<br>|–––<br>|||
|IRRM<br>~~pfa~~|Reverse Recovery Current<br>~~pfa~~|–––<br>~~a~~|2.9<br>~~a~~|–––<br>~~a~~|A<br>~~a~~||



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IRFB/S/SL7530PbF 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>100 5.0V<br>BOTTOM 4.5V<br>4.5V<br>10<br>60µs PULSE WIDTH<br>Tj = 25°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics<br>1000<br>100<br>Baran<br>T J  = 175°C TJ = 25°C<br>101 JEGn<br>i<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 AT<br>2 3 4 5 6 7<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Output Characteristics 

**Fig 5.** Typical Transfer Characteristics 

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1000000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C rss    = C gd<br>100000 To} C oss   = C ds  + C gd<br>C iss<br>10000 BaarUY Coss BL<br>C rss<br>1000 = Sal)<br>Bilinear Sal<br>BEL A Bi<br>100<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>4.5V<br>100<br>60µs PULSE WIDTH<br>Tj = 175°C<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>2.4<br>ID = 100A<br>VGS = 10V<br>2.0<br>pune.<br>1.6<br>1.2<br>[<br>ean<br>0.8<br>PTTL<br>0.4<br>-60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>Fig 6.   Normalized On-Resistance vs. Temperature<br>14.0<br>ID = 100A<br>12.0<br>VDS= 48V<br>10.0 Py V DS = 30V<br>VDS= 12V<br>8.0<br>aaa<br>6.0<br>Ae<br>4.0<br>a=" 7500<br>2.0 TA | i td ed<br>0.0 PCE<br>0 50 100 150 200 250 300 350<br> QG,  Total Gate Charge (nC)<br>Fig 8.   Typical Gate Charge vs.<br>Gate-to-Source Voltage<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

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IRFB/S/SL7530PbF 

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1000 1000<br>100µsec<br>100 TJ = 175°C a 100<br>Limited by<br>10 TJ = 25°C 10 package 1msec<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>10msec<br>1 PELL 1 sit He DC<br>Tc = 25°C<br>VGS = 0V Tj = 175°C<br>Single Pulse<br>0.1 HER 0.1 Aas<br>0.1 1 10<br>0.1 0.4 0.7 1.0 1.3 1.6 1.9<br>VDS, Drain-toSource Voltage (V)<br>VSD, Source-to-Drain Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>80 2.0<br>Id = 1.0mA<br>1.8<br>77 1.6<br>1.4<br>74 1.2<br>1.0<br>71 0.8<br>0.6<br>68 0.4<br>0.2<br>65 0.0<br>-60 -20 20 60 100 140 180 0 10 20 30 40 50 60<br>TJ , Temperature ( °C )<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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10<br>VGS = 5.5V<br>9 VGS = 6.0V | ote |<br>VGS = 7.0V<br>8 VGS = 8.0V Kp<br>VGS = 10V<br>7 \<br>65 PT PRK<br>4<br>PANG<br>3<br>21 a eeee<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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~~ItaR~~ 

IRFB/S/SL7530PbF ~~fF~~ 

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1<br>Te<br>D = 0.50<br>0.1<br>0.20<br>0.10<br>0.05<br>0.01 0.02<br>Spee= tlt<br>0.01<br>0.001 |A SINGLE PULSE Re Se<br>( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 CUTE 1E-005 UU 0.0001 a 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150 ° C and<br>Tstart =25°C (Single Pulse)<br>|<br>100 ee ooo<br>OU aa a<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>Sa BB eee<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Avalanche Current vs. Pulse Width<br>600<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>500 I D  = 100A 1.Avalanche failures assumption:<br>aq Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>400 AA pee part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>   exceeded.<br>300 3. Equation below based on circuit and waveforms shown in Figures<br>PSE     23a, 23b.<br>200 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>PSST 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>100 6. Iav = Allowable avalanche current.<br>PST 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 15, 16).<br>0 TET tav = Average time in avalanche.<br>ET TASS.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14)<br>Starting TJ , Junction Temperature (°C) T/ ZT/ ZthJC<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 14) thJC(D, tav) = Transient thermal resistance, see Figures 14) (D, tav) = Transient thermal resistance, see Figures 14) av) = Transient thermal resistance, see Figures 14) ) = Transient thermal resistance, see Figures 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZT/ ZthJC Iav = 2T/ [1.3·BV·Zth] 

      - EAS (AR) = PD (ave)·tav 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

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IRFB/S/SL7530PbF ~~CE~~ 

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ZT<br>4.5<br>4.0<br>TTI T  TTT<br>3.5<br>PERCE<br>3.0<br>CBSSCSSELE<br>2.5<br>TTS<br>2.0 ID = 250µA<br>ID = 1.0mA<br>ID = 1.0A<br>TERT<br>1.51.0 PTL ELELELRN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
20<br>IF = 60A<br>VR = 51V<br>15 T J = 25°C ae<br>TJ = 125°C<br>Se<br>10<br>A<br>5<br>La |<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
20<br>IF = 100A<br>VR = 51V<br>15 T J = 25°C ae<br>TJ = 125°C<br>=<br>10<br>| [Let] : -<br>~s<br>eae<br>5<br>0 vt} ] fe<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
450<br>IF = 60A<br>400<br>VR = 51V<br>T = 25°C<br>350 J TI<br>TJ = 125°C<br>300<br>250 T oeZ<br>maa<br>200 Fit<br>150 Tet<br>100<br>50 ET T OI<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
400<br>IF = 100A<br>P|<br>350 V R  = 51V<br>TJ = 25°C<br>300 T  = 125°C Ft oeft<br>J<br>250 tz<br>200<br>rea<br>nmea<br>150<br>Bann<br>100<br>50 ot| ff<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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IRFB/S/SL7530PbF ~~Fo~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

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VDD<br>**----- End of picture text -----**<br>


**Fig 24b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>| |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFB/S/SL7530PbF 

## **TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

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**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## ~~IveR~~ 

**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997<br>RECTIFIER<br>IN THE ASSEMBLY LINE "C"<br>LOGO<br>DATE CODE<br>YEAR 7 = 1997<br>ASSEMBLY<br>LOT CODE WEEK 19<br>LINE C<br>|<br>OR<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>P = DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFB/S/SL7530PbF 

## **D[2] Pak (TO-263AB) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D[2] Pak (TO-263AB) Part Marking Information** 

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THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S 1 s<br>IN THE ASSEMBLY LINE "L" LOGO I@R ~<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>LOT CODE WEEK 02<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>a PRODUCT (OPTIONAL)<br>ASSEMBLY WU<br>LOT CODE vg YEAR 0 =  2000<br>UJ U WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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11 

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IRFB/S/SL7530PbF ~~ee~~ 

**D[2] Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

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**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|TO-220|N/A|
||D2Pak|MSL1|
||TO-262|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/7/2014|<br>Updated EAS (L =1mH)= 1025mJ  on page 2<br><br>Updated note 10  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 45A, VGS=10V”.  on page 2<br><br>Updatedpackage outline onpage 9,10,11.|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

13 www.irf.com ~~=~~ 

~~_~~ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS7530TRLPBF/power-mosfet-n-channel-60-v-295-a-2000-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs7530trlpbf/mosfet-n-ch-60v-295a-to-263/dp/2709996)
---

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