# Power MOSFET, N Channel, 40 V, 240 A, 750 µohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2456718/)

**URL**: https://novapart.co/products/IRFS7430TRL7PP/power-mosfet-n-channel-40-v-240-a-750-ohm-to-263
**SKU**: IRFS7430TRL7PP
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.6000
**Stock**: 10+
**Lead Time**: 99 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:40V; On Resistance Rds(on):550µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 240A |
| Drain Source On State Resistance | 750µohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456718/)

## Strong _IR_ FET™ IRFS7430-7PPbF ~~pe~~ 

## **Application** 

- Brushed Motor drive applications 

- BLDC Motor drive applications 

- PWM Inverterized topologies 

- Battery powered circuits 

- Half-bridge and full-bridge topologies 

- Electronic ballast applications 

- Synchronous rectifier applications 

- Resonant mode power supplies 

- OR-ing and redundant power switches 

HEXFET[® ] Power MOSFET 

||||D|**VDSS**|**40V**|
|---|---|---|---|---|---|
|G||||**RDS(on) typ.**<br> **max**|**0.55m**<br>**0.75m**|
|||||||
||||S|**ID (Silicon Limited)**<br>**ID (Package Limited)**|**522A**<br>**240A**|



- DC/DC and AC/DC converters 

## **Benefits** 

- Improved  Gate, Avalanche and Dynamic dV/dt Ruggedness 

- Fully Characterized Capacitance and Avalanche SOA 

- Enhanced body diode dV/dt and dI/dt Capability 

- Lead-Free, RoHS Compliant 

|**G**|**D**|**S**|
|---|---|---|
|Gate|Drain|Source|



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Standard Pack  Orderable Part Number<br>Base part number  Package Type<br>Form  Quantity<br>Tube  50  IRFS7430-7PPbF<br>IRFS7430-7PPbF   D [2] Pak-7Pin<br>Tape and Reel Left  800  IRFS7430TRL7PP<br>4.0<br>600<br>ID = 100A<br>Limited By  Package<br>500<br>A Lt<br>3.0<br>400<br>2.0 WA<br>300<br>TJ = 125°C<br>200<br>tt} ts<br>1.0<br>Oe =  RPS 100<br>TJ = 25°C<br>0.0<br>-SeHEE 0 P| || tt<br>4 6 8 10 12 14 16 18 20<br>25 50 75 100 125 150 175<br>VGS, Gate -to -Source Voltage  (V)  TC , Case Temperature (°C)<br>)<br>RDS(on),  Drain-to -Source On Resistance (m<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 

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Submit Datasheet Feedback November 6, 2014 

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IRFS7430-7PPbF ~~|~~ 

## **Absolute Maximium Rating** 

||**Symbol**|**Parameter**||**Max.**|**Units**|
|---|---|---|---|---|---|
||ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)||522||
||ID @TC= 100°C<br>ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)<br>Continuous Drain Current,VGS @10V(Wire Bond Limited)||369<br>240|A|
||IDM|Pulsed Drain Current||1200*||
||PD @TC= 25°C|Maximum Power Dissipation||375|W|
|||Linear DeratingFactor||2.5|W/°C|
||VGS|Gate-to-Source Voltage||± 20|V|
||TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|-55  to + 175|°C|
|||Soldering Temperature, for 10 seconds (1.6mm from case)||300||
||**Avalanche Characteristics**|||||
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy <br>764<br>mJ<br>EAS (Thermally limited)<br>Single Pulse Avalanche Energy<br>1454<br>IAR<br>Avalanche Current<br>See Fig 15, 16, 23a, 23b<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>~~————~~<br>~~oe~~||||||
||**Thermal Resistance**|||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>0.4<br>RJA<br>Junction-to-Ambient<br>–––<br>40<br>°C/W<br>~~re~~||||||



**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**|**Min.**|**Typ. Max.**|**Typ. Max.**|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage|40|–––|–––|V|VGS= 0V,ID= 250µA|
|V(BR)DSS/TJ|JBreakdown Voltage Temp. Coefficient|–––|26|–––|mV/°C Reference to 25°C|mV/°C Reference to 25°C,ID= 2mA|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|0.55|0.75|m|VGS= 10V,ID= 100A|
|||–––|0.93|–––||VGS=6V,ID=50A|
|VGS(th)<br>~~—_—==~~|GateThresholdVoltage<br>~~—_—==~~|2.2<br>~~—_—==~~|3.0<br>~~==~~|3.9<br>~~==~~|V<br>~~==~~|VDS= VGS,ID= 250µA<br>~~==~~|
|GS(th)<br>IDSS<br>~~—_—==~~|Drain-to-Source Leakage Current<br>~~—_—==~~|–––<br>~~—_—==~~|–––<br>~~==~~|1.0<br>~~==~~|µA<br>~~==~~|VDS=40V,VGS=0V<br>~~==~~|
|||–––<br>~~—_—==~~|–––<br>~~==~~|150<br>~~==~~||VDS=40V,VGS=0V,TJ=125°C<br>~~==~~|
|IGSS<br>~~—_—==~~|Gate-to-Source Forward Leakage<br>~~—_—==~~|–––<br>~~—_—==~~|–––<br>~~==~~|100<br>~~==~~|nA<br>~~==~~|VGS= 20V<br>~~==~~|
||Gate-to-Source Reverse Leakage<br>~~—_—==~~|–––<br>~~—_—==~~|–––<br>~~==~~|-100<br>~~==~~||VGS = -20V<br>~~==~~|
|RG<br>~~—_—==~~|Gate Resistance<br>~~—_—==~~|–––<br>~~—_—==~~|2.2<br>~~==~~|–––<br>~~==~~|<br>~~==~~|~~==~~|



- Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 153µH, RG = 50, IAS = 100A, VGS =10V. 

- ISD  100A, di/dt  1403A/µs, VDD  V(BR)DSS, TJ 175°C. 

- Pulse width  400µs; duty cycle  2%. 

-  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

-  R is measured at TJ approximately 90°C. 

-    Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 54A, VGS =10V. 

-    When mounted on 1" square PCB (FR-4 or G-10 Material). Please refer to AN-994 for more details: - - 

- http://www.irf.com/technical info/appnotes/an 994.pdf 

* Pulse drain current is limited at 960A by source bonding technology. 

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~~LR~~ 

IRFS7430-7PPbF ~~[~~ 

## **Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~es~~|**Parameter**<br>~~DO~~|**Min.**<br>~~DO~~|**Typ. **<br>~~DO~~|**Max. Units**<br>~~DO~~|**Max. Units**|**Max. Units**<br>**Conditions**|
|---|---|---|---|---|---|---|
|gfs<br>~~es~~<br>~~GO~~|Forward Transconductance<br>~~DO~~<br>~~GO~~|176<br>~~DO~~<br>~~GO~~|–––<br>~~DO ~~<br>~~GO~~|–––<br> ~~DO~~<br>~~GO~~|S<br>~~GO~~|VDS= 10V,ID=100A<br>~~GO~~|
|Qg<br>~~a~~|Total Gate Charge|–––|305|460|nC|ID= 100A<br>VDS= 20V<br>VGS= 10V|
|Qgs<br>~~a~~|Gate-to-Source Charge|–––|84|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge|–––|96|–––|||
|Qsync<br>~~a~~|Total Gate Charge Sync.(Qg–Qgd)|–––|209|–––|||
|td(on)<br>~~a~~<br>~~a~~|Turn-On DelayTime|–––|28|–––|ns|VDD= 20V<br>ID= 30A<br>RG= 2.7<br>VGS= 10V|
|tr<br>~~a~~|Rise Time|–––|79|–––|||
|td(off)|Turn-Off DelayTime|–––|161|–––|||
|tf|Fall Time|–––|93|–––|||
|Ciss|Input Capacitance|––– 13975|––– 13975|––– 13975<br>–––|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7|
|Coss|Output Capacitance|–––|2140|–––|||
|Crss|Reverse Transfer Capacitance|–––|1438|–––|||
|Coss eff.(ER)<br>~~7)~~|Effective Output Capacitance (Energy Relat-<br>ed)<br>~~7)~~|–––<br>~~7)~~|2620<br>~~7)~~|–––<br>~~7)~~||VGS= 0V, VDS = 0V to 32V<br>See Fig.11|
|Coss eff.(TR)<br>~~sD~~|Output Capacitance(Time Related)<br>~~sD~~|–––<br>~~sD~~|3306<br>~~sD~~|–––<br>~~sD~~||VGS= 0V,VDS = 0V to 32V|
|**Diode Characteristics**<br>~~pO~~|||||||
|**Symbol**<br>~~pO~~|**Parameter **<br>|**Min.**<br>|**Typ. **<br>|**Max.**<br>|**Units**<br>|**Conditions**<br>|
|IS<br>~~pOa~~|Continuous Source Current<br>(Body Diode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|522<br>~~a~~|A<br>~~a~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-njunctiondiode.<br>D<br>S<br>G<br>~~a~~|
|ISM<br>~~a~~|(Body Diode)<br>Pulsed Source Current<br>(BodyDiode)<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1200*<br>~~a~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|0.8<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 100A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|–––<br>~~a~~|1.6<br>~~a~~|–––<br>~~a~~|V/ns T<br>~~a~~|V/ns TJ= 175°C,IS=100A,VDS= 40V<br>~~a~~|
|trr<br>~~eo~~|Reverse Recovery Time<br>~~eo~~|–––<br>~~eo~~|50<br>~~eo~~|–––<br>~~eo~~|ns<br>~~eo~~|TJ =25°CVDD= 34V<br>TJ =125°CIF= 100A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~eo~~|58<br>~~eo~~|–––<br>~~eo~~|||
|Qrr<br>~~eo~~<br>~~ee~~|Reverse Recovery Charge<br>~~eo~~<br>~~ee~~|–––<br>~~eo~~<br>~~ee~~|59<br>~~eo~~<br>~~ee~~|–––<br>~~eo~~<br>~~ee~~|nC<br>~~eo~~<br>~~ee~~||
|||–––<br>~~eo~~<br>~~ee~~|72<br>~~eo~~<br>~~ee~~|–––<br>~~eo~~<br>~~ee~~|||
|IRRM<br>~~ee~~<br>~~a~~|Reverse Recovery Current<br>~~ee~~|–––<br>~~ee~~|2.2<br>~~ee~~|–––<br>~~ee~~|A<br>~~ee~~||



3 ~~,~~ 

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IRFS7430-7PPbF ~~[LT~~ 

## ~~16é4R~~ 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>100 7.0V 6.0V 7.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>10 100<br>a L<br>4.5V 4.5V<br>1<br>60µs PULSE WIDTH 60µs  PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>0.1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 4.   Typical Output Characteristics<br>Fig 3.   Typical Output Characteristics<br>1000 2.0<br>ID = 100A<br>VGS = 10V<br>TJ = 175°C<br>100 1.6<br>10 AT TJ = 25°C 1.2<br>1 Eitana (i 0.8<br>VDS = 10V<br>60µs PULSE WIDTH<br>0.1 ffl 0.4<br>2 3 4 5 6 7 8 -60 -20 20 60 100 140 180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>1000000 14.0<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED ID = 100A<br>100000 TL] CC rss  oss    = C= C ds gd  + C gd 86 12.010.0  FP VVDS DS = 32V= 20V<br>8.0<br>Ciss<br>10000<br>6.0<br>Coss<br>Crss<br>4.0<br>1000<br>CTE sell oo Aone<br>2.0<br>Bai UA JOE<br>100 0.0<br>0.1 1 10 100 0 50 100 150 200 250 300 350 400<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


## **Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. Gate-to-Source Voltage 

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IRFS7430-7PPbF 

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1000<br>19R<br>T J  = 175°C<br>100<br>if<br>TJ = 25°C<br>10<br>1<br>V GS  = 0V<br>0.1 EiGeee<br>[eeeeen<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.<br>48<br>Id = 2.0mA<br>47<br>46<br>45 Pt | tLvyOe<br>44 4A<br>fA<br>43 | | ft<br>FY<br>42<br>41 ft || || ft| ff<br>40 Pt4mm<br>-60 -20 20 60 100 140 180<br>TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY RDS(on)<br>1000<br>100µsec<br>100<br>1msec<br>Limited by Package<br>10 DC<br>10msec<br>1 Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>0.1 rae<br>A<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>He<br>-5 0 5 10 15 20 25 30 35 40 45<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to–Source Breakdown Voltage 

**Fig 12.** Typical Coss Stored Energy 

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10.0<br>VGS = 5.5V<br>VGS = 6.0V<br>VGS = 7.0V<br>8.0<br>VGS = 8.0V<br>VGS = 10V<br>HE<br>6.0<br>avian<br>UZ<br>4.0<br>2.0<br>paiva<br>ee<br>0.0<br>0 100 200 300 400 500<br>ID, Drain Current (A)<br>)<br>m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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IRFS7430-7PPbF ~~LLL~~ 

## ~~TGR~~ 

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1<br>TT Tu<br>D = 0.50<br>0.1 0.20<br>0.10<br>0.05<br>0.01 ot 0.02 eee IE Lil<br>0.01<br>SINGLE PULSE<br>0.001 amePe ( THERMAL RESPONSE ) eA |<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 dilil All| Se<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 14.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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1000<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>S U Tstart =25°C (Single Pulse | )<br>100 SH<br>IVTRNAS<br>10<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  j = 25°C and<br>Tstart = 150°C.<br>cemmemmmemengee Mantconaul<br>1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Avalanche Current vs. Pulse width 

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800<br>TOP          Single Pulse<br>(LLY<br>700 BOTTOM   1.0% Duty Cycle<br>ID = 100A<br>600 NT<br>500<br>SOT<br>400 BONGEEEREE<br>300<br>CENT<br>200 COCO<br>100<br>COOP<br>CCCCECT ASS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

1.Avalanche failures assumption: 

   - Purely a thermal phenomenon and failure occurs at a 

   - temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - tav = Average time in avalanche. 

   - D = Duty cycle in avalanche =  tav ·f 

   - ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

- EAS (AR) = PD (ave)·tav 

6 

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IRFS7430-7PPbF<br>.}8§»§»§||_<br>rR . .<br>4.5 16<br>IF = 60A<br>4.0 14 VR = 34V<br>TTT AT 12 T J = 25°C Pf Tt<br>3.5 TJ = 125°C<br>EST Ee<br>10<br>3.0<br>TSS ae<br>8<br>2.5<br>TTR TTT Aa<br>ID = 250µA 6<br>ID = 1.0mA<br>2.0<br>ID = 1.0A 4<br>PENNE 77 |<br>1.5 TOTTONNE 2 atrt<br>1.0 0<br>-75 -25 25 75 125 175 225 0 200 400 600 800 1000<br>TJ , Temperature ( °C ) diF /dt (A/µs)<br>IRRM (A)<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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14<br>IF = 100A<br>12 VR = 34V<br>TJ = 25°C<br>10 T J  = 125°C<br>8 | Coe“TI.<br>ae<br>6<br>P| a<br>4<br>TAT<br>2<br>A | |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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700<br>IF = 60A<br>600 V R  = 34V<br>TJ = 25°C<br>500 T J  = 125°C<br>400<br>ear,TT<br>ins<br>300<br>200 4a4<br>100 A<br>0<br>TP Ty<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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450<br>IF = 100A<br>400<br>VR = 34V | | |<br>350 T J = 25°C P|<br>TJ = 125°C<br>300<br>Pp |<br>250<br>| | eA<br>200<br>| TZ<br>eae<br>150<br>100<br>ae<br>por<br>50<br>| |<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>tp 0.01<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

**==> picture [172 x 117] intentionally omitted <==**

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Vds H! Id<br>Vgs<br>f<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFS7430-7PPbF 

**D[2] Pak-7Pin  Package Outline** (Dimensions are shown in millimeters (inches)) 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFS7430-7PPbF ~~|~~ 

## ~~LéaR~~ 

## **D[2] Pak-7Pin  Part Marking Information** 

## **D2Pak-7Pin Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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~~16aR~~ 

IRFS7430-7PPbF ~~|~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D2Pak-7Pin|MSL1|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site:  http://www.irf.com/product-info/reliability/ 

††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comments**|
|---|---|
|11/6/2014|<br>Updated EAS (L =1mH)= 1454mJ  on page 2<br><br>Updated note 9  “Limited byTJmax,startingTJ= 25°C,L = 1mH,RG= 50,IAS= 54A,VGS=10V”.  onpage 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS7430TRL7PP/power-mosfet-n-channel-40-v-240-a-750-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs7430trl7pp/mosfet-n-ch-40v-240a-to-263cb/dp/2456718)
---

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