# Power MOSFET, N Channel, 100 V, 73 A, 0.014 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:3155143/)

**URL**: https://novapart.co/products/IRFS4610TRLPBF/power-mosfet-n-channel-100-v-73-a-0014-ohm-to
**SKU**: IRFS4610TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8670
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 190W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 73A |
| Drain Source On State Resistance | 0.014ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3155143/)

## PD - 95936¢ IRFB4610PbF IRFS4610PbF IRFSL4610PbF 

## **Applications** 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply 

High Speed Power Switching Hard Switched and High Frequency Circuits 

HEXFET Power MOSFET 

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D VDSS 100V<br>RDS(on)   typ. 11m<br>G               max. 14m<br>S ID 73A<br>**----- End of picture text -----**<br>


## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

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D [S] G [DS]<br>G G [DS]<br>TO-220AB D [2] Pak TO-262<br>IRFB4610PbF IRFS4610PbF IRFSL4610PbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Symbol**<br>**Parameter**<br>**Units**<br>**Max.**|
|---|
|ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>A<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>190<br>± 20<br>1.3<br>73<br>52<br>290<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~DR~~<br>~~a~~<br>~~(I~~<br>~~I~~|
|dV/dt<br>Peak Diode Recovery<br>V/ns<br>7.6<br>~~7~~|
|TJ<br>Operating Junction and<br>°C<br>-55  to + 175|
|TSTG<br>Storage Temperature Range|
|Soldering Temperature, for 10 seconds<br>300|
|(1.6mm from case)|
|Mountingtorque, 6-32 or M3 screw<br>10lb in(1.1N m)<br>~~a~~|
|**Avalanche Characteristics**|
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>370<br>~~ns~~<br>~~cc~~<br>~~|~~|
|IAR<br>Avalanche Current<br>A<br>See Fig. 14, 15, 16a, 16b,|
|EAR<br>Repetitive Avalanche Energy<br>mJ|
|**Thermal Resistance**|
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**|
|RθJC<br>Junction-to-Case<br>–––<br>0.77<br>RθCS<br>Case-to-Sink, Flat Greased Surface , TO-220<br>0.50<br>–––<br>°C/W<br>RθJA<br>Junction-to-Ambient, TO-220<br>–––<br>62<br>RθJA<br>Junction-to-Ambient(PCB Mount) ,D2Pak<br>–––<br>40<br>~~aa~~<br>~~OO~~<br>~~a1~~<br>~~GO~~|



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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**|
|---|---|
|V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>RDS(on)<br>VGS(th)<br>IDSS<br>IGSS<br>RG|Drain-to-Source Breakdown Voltage<br>100<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.085<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>11<br>14<br>mΩ<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>200<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-200<br>Gate Input Resistance<br>–––<br>1.5<br>–––<br>Ω<br>f = 1MHz, open drain<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 1mA<br>VGS= 10V, ID= 44A<br>VDS= VGS, ID= 100µA<br>VDS= 100V, VGS= 0V<br>VDS= 100V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~GO~~<br>~~QQ~~<br>~~Gn~~<br>~~OQ~~<br>~~©~~<br>~~eG~~<br>~~QQ GO~~<br>~~GGG~~<br>~~ee~~<br>~~ee eee~~<br>~~||~~<br>~~————~~<br>~~a ——~~<br>~~|||~~<br>~~GGG~~|
|**Dynamic @ TJ = 25°C (unless otherwise specified)**||
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**|
|gfs|Forward Transconductance<br>73<br>–––<br>–––<br>S<br>VDS= 50V, ID= 44A<br>~~GGG~~|
|Qg|Total Gate Charge<br>–––<br>90<br>140<br>nC<br>ID= 44A<br>~~ee~~|
|Qgs|Gate-to-Source Charge<br>–––<br>20<br>–––<br>VDS= 80V<br>~~a~~|
|Qgd|Gate-to-Drain("Miller")Charge<br>–––<br>36<br>–––<br>VGS= 10V<br>~~a~~<br>®|
|td(on)|Turn-On DelayTime<br>–––<br>18<br>–––<br>ns<br>VDD= 65V<br>~~ee~~|
|tr|Rise Time<br>–––<br>87<br>–––<br>ID= 44A<br>~~a~~|
|td(off)|Turn-Off DelayTime<br>–––<br>53<br>–––<br>RG= 5.6Ω<br>~~a~~|
|tf|Fall Time<br>–––<br>70<br>–––<br>VGS= 10V<br>~~a~~<br>®|
|Ciss|Input Capacitance<br>–––<br>3550<br>–––<br>pF<br>VGS= 0V<br>~~ee~~|
|Coss|Output Capacitance<br>–––<br>260<br>–––<br>VDS= 50V<br>~~a~~|
|Crss|Reverse Transfer Capacitance<br>–––<br>150<br>–––<br>ƒ= 1.0MHz<br>~~a~~|
|Cosseff. (ER)<br>Cosseff. (TR)|Effective Output Capacitance(EnergyRelated) –––<br>330<br>–––<br>Effective Output Capacitance(Time Related)<br>–––<br>380<br>–––<br>VGS= 0V, VDS= 0V to 80V<br>See Fig.11<br>VGS= 0V, VDS= 0V to 80V<br>See Fig. 5<br>~~a~~<br>®<br>~~ee~~<br>~~®~~|



## **Diode Characteristics** 

|**Symbol**|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)<br>~~|~~|–––<br>~~|~~|–––<br>~~|~~|73<br>~~|~~|A<br>~~|~~|S<br>D<br>G<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol<br>showing  the|
|ISM|Pulsed Source Current<br>(BodyDiode)<br>~~|~~|–––<br>~~|~~|–––<br>~~|~~|290<br>~~|~~|||
|VSD|Diode Forward Voltage<br>~~|~~<br>~~a~~|–––<br>~~|~~<br>~~a~~<br>~~te~~|–––<br>~~|~~<br>~~a~~<br>~~GO~~<br>~~te~~|1.3<br>~~|~~<br>~~a~~<br>~~GO~~<br>~~te~~|V<br>~~|~~<br>~~a~~<br>~~GO~~<br>~~ee~~|TJ= 25°C, IS= 44A, VGS= 0V<br>~~CO”~~<br>~~ee~~|
|trr|Reverse Recovery Time<br>~~a~~<br>~~ee~~|–––<br>~~a~~<br>~~ee~~<br>~~te~~<br>~~|~~|35<br>~~a~~<br>~~GO~~<br>~~ee~~<br>~~te~~<br>~~|~~|53<br>~~a~~<br>~~GO~~<br>~~ee~~<br>~~te~~<br>|ns<br>~~a~~<br>~~GO ~~<br>~~ee~~<br>~~ee~~|TJ= 25°C<br>VR= 85V,<br>TJ= 125°C<br>IF= 44A<br>TJ= 25°C<br>di/dt = 100A/µs<br>TJ= 125°C<br>TJ= 25°C<br> ~~CO”~~<br>~~ee~~<br>~~ee~~<br>~~EE~~<br>*<br>|
|||–––<br>~~ee~~<br>~~te~~<br>~~|~~|42<br>~~ee~~<br>~~te~~<br>~~||~~|63<br>~~ee~~<br>~~te~~<br>~~|~~|||
|Qrr<br>~~a~~|Reverse Recovery Charge<br>~~EE~~<br>~~a~~|–––<br>~~te~~<br>~~|~~<br>~~EE~~<br>~~|~~|44<br>~~te~~<br>~~|~~<br>~~EE~~<br>~~|~~|66<br>~~te~~<br><br>~~EE~~<br>|nC<br>~~ee~~<br>~~EE~~<br>||
|||–––<br>~~EE~~<br>~~|~~<br>|65<br>~~EE~~<br>~~||~~<br>|98<br>~~EE~~<br>~~|~~<br>|||
|IRRM<br>~~a~~|Reverse RecoveryCurrent<br>~~a~~|–––<br>~~|~~<br>|2.1<br>~~||~~<br>|–––<br>~~|~~<br>|A<br>||
|ton<br>~~a~~|Forward Turn-On Time<br>~~aCe~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~|~~<br>~~Ce~~|||||



Repetitive rating;  pulse width limited by max. junction 

Repetitive rating;  pulse width limited by max. junction fe) Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. as Coss while VDS is rising from 0 to 80% VDSS. 

@ Limited by TJmax, starting TJ = 25°C, L = 0.39mH © Coss eff. (ER) is a fixed capacitance that gives the same energy asoss eff. (ER) is a fixed capacitance that gives the same energy as eff. (ER) is a fixed capacitance that gives the same energy as RG = 25 Ω , IAS = 44A, VGS =10V. Part not recommended for use 

© Coss eff. (ER) is a fixed capacitance that gives the same energy asoss eff. (ER) is a fixed capacitance that gives the same energy as eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

above this value. 

@ When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom ® ISD ≤ 44A, di/dt ≤ 660A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. mended footprint and soldering techniques refer to application note #AN-994. @ Pulse width ≤ 400µs; duty cycle ≤ 2%. R_ θ is measured at T, approximately 90°C 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V Fe ll 6.0V FCT<br>100 5.5V5.0V Aas | | III 5.5V5.0V ane<br>BOTTOM 4.5V BOTTOM 4.5V<br>bE PO 100<br>8 Oi ellCT PA A]YACo| |  I<br>10<br>4.5V<br>4.5V<br>Bact a) eaeeae<br>ee | | | | | | er Mien<br>≤  60µs PULSE WIDTH ≤  60µs PULSE WIDTH<br>HTH yy<br>Tj = 25°C Tj = 25°C<br>1 aiiiililn | 10 All |<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 3.0<br>ID = 73A<br>VGS = 10V<br>———— TELL<br>2.5<br>100.0<br>= TJ = 175°C == 2.0 EEL EL<br>10.0<br>Sf ————— 1.5 WA<br>Ee ee ae, a i<br>TJ = 25°C<br>1.0<br>A=ySee| 1.0 LLL Z|<br>—— VDS = 25V ri<br>a eee | ≤  60µs PULSE WIDTH<br>0.1 fh TTT TTT<br>0.5<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>Fig 3.   Typical Transfer Characteristics<br>6000 20<br>VGS   = 0V,       f = 1 MHZ ID= 44A<br>5000 | C C Ciss rss  oss    = C  = C = Cgs ds gd + C+ Cgdgd,  Cds SHORTED 16 PT VVDS= 50VVDS= 20VDS EE = 80V MSL<br>4000<br>HL Ciss a<br>12<br>— anita pt |<br>3000<br>ot fr<br>8<br>a Aan<br>2000 | |Ly]<br>4<br>a | |<br>1000<br>an il fo<br>Coss<br>Crss<br>a te | 0 A<br>0<br>0 20 40 60 80 100 120 140<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 T = 175°C 100 1 00µ sec<br>J<br>10.0 10<br>1 m sec<br>a TJ = 25°C e e oe ee<br>10 msec<br>1.0 1<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse DC<br>0.1 fp 0.1 |Se<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Fig 8.   Maximum Safe Operating Area<br>Forward Voltage<br>80 125<br>120<br>60 PA EEE EE EEE<br>PsN A<br>115<br>40<br>Tesi)hs = FERRE ALLEL LAL.<br>110<br>ALLLEEEEE NN Ws<br>20<br>105<br>0 TFEEETTTEN 100 ett<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Drain-to-Source Breakdown Voltage<br>Case Temperature<br>2.0 1600<br>                 I D<br>TOP          4.6A<br>                6.3A<br>1.5 1200 BOTTOM   44A<br>1.0 800<br>0.5 400<br>MNO<br>AS<br>0.0 0<br>0 20 40 60 80 100 25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>Energy (µJ)<br>ID,  Drain-to-Source Current (A)<br>ID  , Drain Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

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2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 20 40 60 80 100<br>VDS, Drain-to-Source Voltage (V)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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1<br>D = 0.50<br>0.20<br>0.1 = 0.10 e eenrree ee |<br>0.05<br>0.02 R1 R1 R2 R2 Ri (°C/W)     τ i (sec)<br>0.01 =e 0.01 Ban e etl τ J τ pepe J τ 1 τ 1 τ 2 τ 2 τ C τ re 0.4367    0.001016 0.3337    0.009383 ee A<br>ee ee ee ee Ci= Ci τ i / Rii / Ri | i<br>0.001 pe<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>SSAct 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 en<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse pulsewidth, tav, assuming  ∆ Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>N t fC<br>0.01<br>Pa RS I DT T<br>10 L LZn 0.05 SSS |<br>0.10<br>PERIZ Ze) OSS NEE<br>Ht a SSE<br>1 2 Allowed avalanche Current vs avalanche  20) A ,<br>pulsewidth, tav, assuming  ∆Τ j = 25°C and<br>| Tstart = 150°C. a aee<br>po Et<br>[oor ooo ee<br>PE P P<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>400 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 44A Purely a thermal phenomenon and failure occurs at a temperature far in<br>300 Ni excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as neither Tjmaxjmax nor Iav<br> is exceeded.<br>3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>200 NUENA 4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>during avalanche).<br>6. Iav = Allowable avalanche current.<br>100 NE 7.  ∆ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>25°C in Figure 14, 15).<br>tav = Average time in avalanche.<br>D = Duty cycle in avalanche =  tav ·f<br>0 HTLENG TIB N aNS ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav = = 2<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as neither Tjmaxjmax nor Iav (max) is exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ∆ T = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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5.0 16<br>ID = 1.0AD = 1.0A= 1.0A<br>B ID = 1.0mAD = 1.0mA = 1.0mA -<br>4.0 bn Zeeeeeee ID = 250µAD = 250µA = 250µAµAA 12 ¢ a 4<br>3.0 ASS SipeT San T ID = 100µA 8 y, nae pr<br>2.0 IS Sk 4 ae7 IF = 29A<br>VR = 85V<br>T  = 125°C<br>J<br>TJ =  25°C<br>1.0 0<br>-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000<br>TJ , Temperature ( °C ) dif / dt - (A / µs)<br>Fig. 17 - Typical Recovery Current vs. di;/dt<br>Fig 16.   Threshold Voltage Vs. Temperature<br>16 300<br>e<br>°<br>12 TTT 1) - LAT TTT<br>200 ooeeeeeee<br>8<br>ap ae Sp] Laer Le<br>4 EAT;¢4 L IF = 44A O 100 L y e Ll ° a| er IF  | = 29A A | |<br>VR = 85V PEAT VR = 85V<br>TJ = 125°C  TJ = 125°C<br>TJ =  25°C TJ =  25°C<br>0 0<br>100 TTT 200 300 400 500 600 700 800 = 900  | 1000 100 PT 200 300 400 500 |E 600 700 800 900 |=| 1000<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>QRR - (nC)<br>IRRM - (A)<br>IRRM - (A)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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5.0<br>ID = 1.0AD = 1.0A= 1.0A<br>B ID = 1.0mAD = 1.0mA = 1.0mA<br>4.0 bn Zeeeeeee ID = 250µAD = 250µA = 250µAµAA<br>ASS SipeT ID = 100µA<br>3.0 San<br>2.0 IS Sk<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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300<br>e<br>Seeeeeeee<br>200 || Let° eo Le<br>100 EpaePaeee<br>IF = 44A<br>VR = 85V<br>AT] ||<br>TJ = 125°C<br>T  =  25°C<br>J<br>aT<br>0<br>=<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$—————— P.W. Period — + D = —— Period<br>) [©)]    •  CircuitLow  LayoutS ConsiderationsInd | t V t GS=10<br> •<br>- •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt /<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test SOO |<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @| t<br>* Vg = 5V for Logic Level Devices<br>Fig 21.  Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V << tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>p 20VVGS AEae / \<br>tp 0.01 Ω IAS<br> Unclamped Inductive Test Circuit Fig 22b.   Unclamped Inductive Waveforms<br>LDD<br>VDSDS VDS<br>90%<br>+<br>VDDDD -<br>D.U.T 10% x \<br>VGSGS VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1% td(on) tr td(off) tf<br>  Switching Time Test Circuit Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>L<br>VCC<br>DUT<br>Vgs(th)<br>1K<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 22a.** Unclamped Inductive Test Circuit 

**==> picture [186 x 245] intentionally omitted <==**

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LDD<br>VDSDS<br>+<br>VDDDD -<br>D.U.T<br>VGSGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 23a.   Switching Time Test Circuit<br>L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 23a.** Switching Time Test Circuit 

**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRF1010<br>LOT CODE 1789 INTERNATIONAL PART NUMBER<br>ASSEMBLED ON WW 19, 2000 RECTIFIER<br>IRF1010<br>IN THE ASSEMBLY LINE "C" LOGO ITeaR 019C<br>17 89 DATE CODE<br>YEAR 0 =  2000<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead - Free" LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [326 x 77] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL oS<br>IN THE ASSEMBLY LINE "C" RECTIFIERLOGO IeaRIRL3103L719C<br>DATE CODE<br>17 89<br>YEAR 7 =  1997<br>Note: "P” in assembly line position ASSEMBLY<br>indicates "Lead — Free” LOT CODE WEEK 19<br>LINE C<br>**----- End of picture text -----**<br>


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OR<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL SY<br>RECTIFIER IRL3103L<br>LOGO TeaR P719A<br>DATE CODE<br>17 89<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

www.irf.com 

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**==> picture [358 x 226] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL<br>cS<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO TeaR 0021<br>DATE CODE<br>80 24<br>YEAR 0 =  2000<br>ASSEMBLY<br>assembly line position LOT CODE 7 7 WEEK 02<br>"Lead - Free” u u LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>cS<br>RECTIFIER F530S<br>LOGO TeaR P002A DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>80 24<br>PRODUCT (OPTIONAL)<br>ASSEMBLY Wu<br>LOT CODE 7 7 YEAR 0 =  2000<br>L L WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/** 

**2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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**==> picture [394 x 417] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 7 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>O50 64 =| 15.42 (.609) _ |<br>23.90 (.941)<br>15.22 (.601)<br>TRL a<br>10.90 (.429) ~ | 1.75 (.069)1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>0000 LT 16.10 (.634) ) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) T<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>30.40 (1.197)<br>NOTES : oO ale       MAX.<br>1.   COMFORMS TO EIA-418.<br>2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) I 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

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- [View this product on Novapart](https://novapart.co/products/IRFS4610TRLPBF/power-mosfet-n-channel-100-v-73-a-0014-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irfs4610trlpbf/mosfet-n-ch-100v-73a-175deg-c/dp/3155143)
---

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