# Power MOSFET, N Channel, 150 V, 86 A, 0.0147 ohm, TO-263CB, Surface Mount

![Product image](https://novapart.co/image/farnell:3294680/)

**URL**: https://novapart.co/products/IRFS4321TRL7PP/power-mosfet-n-channel-150-v-86-a-00147-ohm-to
**SKU**: IRFS4321TRL7PP
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4900
**Stock**: 500+
**Lead Time**: 2 days (indicative)

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (27-Jun-2018) |
| No. Of Pins | 7Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 350W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263CB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 86A |
| Drain Source On State Resistance | 0.0147ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:3294680/)

IRFS4321-7PPbF 

## **Application** 

- Motion Control Applications 

- High Efficiency Synchronous Rectification in SMPS 

- Uninterruptible Power Supply 

- Hard Switched and High Frequency Circuits 

## **Benefits** 

- Low Rdson Reduces Losses 

- Low Gate Charge Improves the Switching Performance 

- Improved  Diode Recovery Improves Switching & 

- EMI Performance 

- 30V Gate Voltage Rating Improves Robustness 

- Fully Characterized Avalanche SOA 

HEXFET[® ] Power MOSFET 

|G|||D<br>S|D2Pak 7Pin<br>**VDSS**<br>**150V**<br>**RDS(on) typ.**<br>**11.7m**<br> **max**<br>**14.7m**<br>**ID**<br>**86A**<br>~~——~~<br>»|D2Pak 7Pin<br>**VDSS**<br>**150V**<br>**RDS(on) typ.**<br>**11.7m**<br> **max**<br>**14.7m**<br>**ID**<br>**86A**<br>~~——~~<br>»|D2Pak 7Pin<br>**VDSS**<br>**150V**<br>**RDS(on) typ.**<br>**11.7m**<br> **max**<br>**14.7m**<br>**ID**<br>**86A**<br>~~——~~<br>»|
|---|---|---|---|---|---|---|
|||**G**||**D**||**S**|
||Gate|||Drain||Source|



||**Base part number**||**Package Type**|**Standard Pack**<br>**Form**|**Standard Pack**<br>**Quantity**||**Orderable Part Number**|**Orderable Part Number**|**Orderable Part Number**|
|---|---|---|---|---|---|---|---|---|---|
||IRFS4321-7PPbF||D2Pak-7Pin|Tube|50||IRFS4321-7PPbF|||
|||||Tape and Reel Left|800||IRFS4321TRL7PP|||
|||||||||||
|||||**Parameter**|||**Max.**||**Units**|
|ID @TC= 25°C||Continuous Drain Current,VGS @10V|||||86|||
|ID @TC= 100°C||Continuous Drain Current, VGS @10V|||||61||A|
|IDM||Pulsed Drain Current|||||343|||
|PD @TC= 25°C||Maximum Power Dissi||Maximum Power Dissipation|||350||W|
|||Linear DeratingFactor|||||2.3||W/°C|
|VGS||Gate-to-Source Voltage|||||± 30||V|
|EAS(Thermallylimited)||Single Pulse Avalanche Energy |||||120||mJ|
|TJ<br>TSTG||Operating Junction and<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>(1.6mm from case)|||||-55  to + 175<br>300||°C|
|**Thermal Resistance**||**Thermal Resistance**||||||||
|||||**Parameter**|||**Typ.**|**Max.**|**Units**|
|RJC||Junction-to-Case|||||–––|0.43*|°C/W|
|RJA||Junction-to-Ambient<br>–––||||||40||



RJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium. 

Notes through  are on page 2 

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IRFS4321-7PPbF ~~P|~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)**||
|---|---|---|
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>150<br>–––<br>–––<br>V<br>VGS= 0V, ID= 250µA<br>V(BR)DSS/TJBreakdown Voltage Temp. Coefficient<br>–––<br>150<br>––– mV/°C Reference to 25°C,ID= 1mA<br>RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>11.7<br>14.7<br>mVGS= 10V, ID= 34A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS, ID= 250µA<br>~~PD~~<br>~~ests~~<br>~~(ts ts~~<br>~~eenD~~<br>~~ss~~<br>~~ee~~<br>~~ts ts ts~~<br>~~eses~~<br>~~ts ts ns~~|||
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>µA<br>VDS=150 V,VGS= 0V<br>–––<br>–––<br>1.0<br>mA<br>VDS=150V,VGS= 0V,TJ=125°C||=125°C|
|IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>VGS= 20V<br>Gate-to-SourceReverseLeakage<br>–––<br>–––<br>-100<br>VGS= -20V<br>RG(int)<br>Internal Gate Resistance<br>–––<br>0.8<br>–––<br><br>~~———~~<br>~~ee~~<br>~~nD~~<br>~~TD~~<br>~~nD DI~~|||
|**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)**|||
|gfs<br>Forward Transconductance<br>130<br>–––<br>–––<br>S<br>VDS= 25V,ID=50A|||
|Qg<br>Total Gate Charge<br>–––<br>71<br>110<br>nC<br>ID= 50A<br>Qgs<br>Gate-to-Source Charge<br>–––<br>24<br>VDS= 75V<br>Qgd<br>Gate-to-Drain(“Miller”)Charge<br>–––<br>21<br>VGS= 10V<br>td(on)<br>Turn-On DelayTime<br>–––<br>18<br>–––<br>ns<br>VDD= 98V<br>tr<br>Rise Time<br>–––<br>60<br>–––<br>ID= 50A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>25<br>–––<br>RG= 2.5<br>tf<br>Fall Time<br>–––<br>35<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>4460<br>–––<br> <br>VGS= 0V<br>Coss<br>Output Capacitance<br>–––<br>390<br>–––<br>pF VDS= 50V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>82<br>–––<br>ƒ= 1.0MHz<br>~~————— ee~~<br>~~————~~<br>~~ee~~<br>~~—————————~~<br>~~a ne~~|||
|**Diode Characteristics**|||
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>86<br>A<br>MOSFET symbol<br>(BodyDiode)<br>showing  the<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>343<br>integral reverse<br>(BodyDiode)<br>p-njunctiondiode.<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>TJ= 25°C,IS= 50A,VGS= 0V<br>trr<br>Reverse RecoveryTime<br>–––<br>89<br>130<br>ns  IF= 50A,<br>Qrr<br>Reverse RecoveryCharge<br>–––<br>300<br>450<br>nC   VDD= 128V<br>IRRM<br>Reverse Recovery Current<br>–––<br>6.5<br>–––<br>A<br> di/dt = 100A/µs <br>D<br>S<br>G<br>~~ID~~<br>~~nD TD(OD(OO~~<br>~~$A~~<br>~~pe~~<br>~~|~~<br>~~al~~<br>~~ee~~<br>~~rts ts td Sd ts~~<br>~~ee~~<br>~~ee ee~~|||
|**Notes:**|||
|Repetitive rating;  pulse width limited by max. junction temperature.|||
|Limited by Tjmax, starting TJ= 25°C, L = 0.096mH, RG= 25, IAS= 50A, VGS=10V. Part not recommended for use above this value.|||
|Pulse width400µs; duty cycle2%.|||
|Ris measured at TJapproximately 90°C|||
|2<br>www.irf.com© 2013 International Rectifier<br>June 14, 2013<br>~~=~~|||



~~TGR~~ 

IRFS4321-7PPbF ~~a~~ 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>100 6.5V<br>6.0V<br>5.5V<br>BOTTOM 5.0V<br>10 | aa<br>ey I<br>1 TT<br>ot TTL<br> 60µs PULSE WIDTH<br>5.0V Tj = 25°C<br>ee<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>100<br>==<br>ee TJ = 175°CJ = 175°C= 175°C<br>10<br>ILL<br>1 ep T J  = 25°C<br>F VDS = 25VDS = 25V= 25V<br> 60µs PULSE WIDTH 60µs PULSE WIDTH<br>0.1 Af<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>)<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.5V<br>6.0V<br>100 5.5V<br>BOTTOM 5.0V<br>ee<br>10 vai 5.0V ll<br>ALLL<br>Ai<br> 60µs PULSE WIDTH<br>Tj = 175°C<br>1 Ale<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

**Fig 1.** Typical Output Characteristics 

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1000 3.5<br>ID = 50A<br>3.0 V GS  = 10V<br>100<br>== 2.5 Stet y<br>ee TJ = 175°CJ = 175°C= 175°C EELELL<br>10<br>2.0<br>ILL SAEHRURED<br>1 ep T J  = 25°C 1.5 0<br>F VDS = 25VDS = 25V= 25V 1.0 et<br> 60µs PULSE WIDTH 60µs PULSE WIDTH<br>0.1 Af CCPL | EEL<br>0.5<br>3.0 4.0 5.0 6.0 7.0 8.0 9.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 3.   Typical Transfer Characteristics  Fig 4.   Normalized On-Resistance vs. Temperature<br>7000 20<br>VGS   = 0V,       f = 1 MHZ ID= 50A<br>6000 CCiss rss    = C = Cggd s + Cgd,  Cds SHORTED 16 V VDS= 75V DS= 120V<br>Coss  = Cds + Cgd VDS= 30V<br>5000<br>Ciss<br>|See ee  Canes 12 7 p<br>4000 Santi A VA<br>3000 8<br>Coss<br>2000<br>N 4 f |<br>1000<br>Crss<br>0<br>0 SSH JE<br>0 20 40 60 80 100 120<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>)<br>ID, Drain-to-Source Current<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100µsec<br>100 100<br>1msec<br>TJ = 175°C<br>EEBP=a<br>10 10<br>10msec<br>mer 1  aeun TJ = 25°C 1 pa<br>Tc = 25°C<br>Tj = 175°C DC<br>VGS = 0V Single Pulse<br>0.1 0.1<br>ff Mes a<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>Fig 7.   Typical Source-Drain Diode Forward Voltage<br>90 190<br>80<br>—2a5e"Nee 180 TOTLELE<br>70<br>60<br>170<br>50 CPSs EET<br>40<br>160<br>PANE LAL<br>30<br>20 ae 150 OLE<br>10<br>EEE 140 PLETELETETE<br>0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>25 50 75 100 125 150 175<br>TJ , Junction Temperature (°C)<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Case Temperature  Fig 10.   Drain-to–Source Breakdown Voltage<br>5.0 500<br>                 I D<br>TOP         13A       13A<br>4.0 400                20A<br>BOTTOM   50A  50A<br>3.0 TTTCCE 300 SANaeNae<br>2.0 200<br>SGnap 280 CNaeam<br>1.0 100<br>CAT AAT<br>0.0 CEE 0 SSESE<br>0 20 40 60 80 100 120 140 160 25 50 75 100 125 150<br>VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>ISD, Reverse Drain Current (A)<br>Energy (µJ)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


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190<br>180 TOTLELE<br>170<br>EET<br>160<br>LAL<br>150 OLE<br>140 PLETELETETE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to–Source Breakdown Voltage 

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500<br>                 I D<br>TOP         13A       13A<br>400                20A<br>BOTTOM   50A  50A<br>300 SANaeNae<br>200<br>CNaeam<br>100<br>AAT<br>0 SSESE<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical Coss Stored Energy 

**Fig 12.** Maximum Avalanche Energy Vs. Drain Current 

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IRFS4321-7PPbF<br>§+§»+»+3Xz@& Pa<br>1<br>TW<br>D = 0.50<br>0.1 0.20<br>0.10<br>Aw"<br>0.05 R 1 R1 R 2 R2 R 3R3 Ri (°C/W) (sec)<br> J J  C 0.085239 0.000052<br>0.01 — 0.02 1 1 2  2 3 3 0.18817 0.00098<br>0.01 Ci= Ci= iRiiRi 0.176912 0.008365<br>SINGLE PULSE<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>ry 2. Peak Tj = P dm x Zthjc + Tc es<br>Ban<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>Allowed avalanche Current vs avalanche<br>Duty Cycle = Single Pulse<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart =25°C (Single Pulse)<br>0.01<br>10 =a 0.05  a<br>0.10<br>a at<br>Allowed avalanche Current vs avalanche<br>1 Luin pulsewidth, tav, assuming Tstart = 150°C. arrtemes  j = 25°C and   TTT<br>eee Mt<br>0.1 BS EST ASST V@M 0011 MU i<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs. Pulse width<br>Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>120 (For further info, see AN-1005 at www.irf.com)<br>TOP          Single Pulse                 1. Avalanche failures assumption:<br>100 BOTTOM   1% Duty Cycle I D  = 50A     Purely a thermal phenomenon and failure occurs at a      temperature far in excess of Tjmax. This is validated for every part type.<br>rT 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.<br>80 3. Equation below based on circuit and waveforms shown in Figures<br>ANS<br>    23a, 23b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse.<br>60 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br>NSE<br>    increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>40 LINN EL 7. T = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>20 TTT ENN tav = Average time in avalanche.<br>D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>0 EEE ENING PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC<br>25 50 75 100 125 150 175 Iav = 2T/ [1.3·BV·Zth]<br>EAS (AR) = PD (ave)·tav<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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## ~~ick~~ 

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6.0<br>ID = 1.0A<br>ID = 1.0mA<br>5.0 I D  = 250µA<br>ST<br>4.0<br>A<br>3.0<br>2.0<br>eee<br>1.0<br>LEE [TTL]<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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40<br>30<br>LL Lee<br>20 AT<br>TE<br>IF = 33A<br>10<br>VR = 128V<br>TJ = 125°C<br>TJ =  25°C<br>SSCL<br>0<br>100 200 300 400 500 600 700 800 = 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage vs. Temperature 

**Fig 17.** Typical Recovery Current vs. dif/dt 

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40 3200<br>2800<br>30 TT LEEpoun 2400 CCOCOLCOCoC CE Tee<br>2000<br>20 TET 1600 Coe<br>Vie Ce<br>1200<br>10 PZARR, Ea IF = 50A ae 800 ee So2Ste IF = 33A e ee<br>VR = 128V VR = 128V<br>TJ = 125°C  400 T J  = 125°C<br>TJ =  25°C TJ =  25°C<br>TU<br>0 0<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000<br>= } EHHcee =<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>IRRM - (A) QRR - (nC)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

**Fig 19.** Typical Stored Charge vs. dif/dt 

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3200<br>2800 COCO<br>2400 COCoEErT<br>2000 COCeP Ee<br>1600 Coe ere<br>1200 CoC<br>800 CREE IF = 50A<br>VR = 128V<br>400 T J  = 125°C<br>TJ =  25°C<br>vanes<br>0<br>oo |<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


**Fig 20.** Typical Stored Charge vs. dif/dt 

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**Fig 21.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V<br>aeJL tp Y 0.01 |<br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

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IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 23a.** Switching Time Test Circuit 

**Fig 23b.** Switching Time Waveforms 

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Id<br>Vds !H<br>Vgs<br>f<br>Vgs(th)<br>a tngpng | |<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

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IRFS4321-7PPbF 

**D[2] Pak-7Pin  Package Outline** (Dimensions are shown in millimeters (inches)) 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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## **D[2] Pak-7Pin  Part Marking Information** 

## **D2Pak-7Pin Tape and Reel** 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFS4321-7PPbF ~~pe~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D2Pak-7Pin|MSL1|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site:  http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

10 

www.irf.com        © 2013 International Rectifier 

June 14, 2013 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS4321TRL7PP/power-mosfet-n-channel-150-v-86-a-00147-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs4321trl7pp/mosfet-n-ch-150v-86a-175deg-c/dp/3294680)
---

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