# Power MOSFET, N Channel, 150 V, 41 A, 0.045 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2781139RL/)

**URL**: https://novapart.co/products/IRFS41N15DTRLP/power-mosfet-n-channel-150-v-41-a-0045-ohm-to
**SKU**: IRFS41N15DTRLP
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4300
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 3.1W |
| Drain Source On State Resistance | 0.045ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781139RL/)

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF ~~a~~ 

## ~~Cinfin eon~~ 

|HEXFET®Power MOSFET|
|---|
|**VDSS**<br>**150V**|
|**RDS(on) max**<br>**0.045**|
|**ID**<br>**41A**|



## **Applications** 

- High frequency DC-DC converters 

## **Benefits** 

- Low Gate-to-Drain Charge to Reduce Switching Losses 

- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

|Effective COSS to Simplify Design, (See App.OSS to Simplify Design, (See App.to Simplify Design, (See App.||
|---|---|
|Effective COSS to Simplify Design, (See App.OSS to Simplify Design, (See App.to Simplify Design, (See App.<br>Note AN1001)|D<br>D|
|Fully Characterized Avalanche Voltage||
|D2 Pak<br>IRFS41N15DPbF<br>S<br>G<br>S<br>GD<br>TO-262 Pak<br>IRFSL41N15DPbF<br>S<br>D<br>G<br>TO-220AB<br>IRFB41N15DPbF<br>and Current<br>Lead-Free<br>GD S<br>TO-220 Full-Pak<br>IRFB41N15DPbF||
|**G**<br>**D**<br>**S**<br>Gate<br>Drain<br>Source<br>~~———~~||
|**Standard Pack**|**Standard Pack**|
|**Base part number**<br>**Package Type**<br>**Form**|**Orderable Part Number**<br>**Quantity**|
|IRFB41N15DPbF<br>TO-220<br>Tube|50<br>IRFB41N15DPbF|
|IRFSL41N15DPbF<br>TO-262<br>Tube|50<br>IRFSL41N15DPbF|
|IRFIB41N15DPbF<br>TO-220 Full-Pak<br>Tube|50<br>IRFIB41N15DPbF|
|IRFS41N15DPbF<br>D2-Pak<br>Tube<br>Tape and Reel Left|50<br>IRFS41N15DPbF<br>800<br>IRFS41N15DTRLPbF|
|**Absolute Maximum Ratings **||
|**Symbol**<br>**Parameter**<br>**Max.**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>41<br>A<br>ID @TC= 100°C<br>Continuous Drain Current,VGS @10V<br>29<br>IDM<br>Pulsed Drain Current<br>164<br>PD@TA= 25°C<br>Maximum Power Dissipation  D2-Pak<br>3.1<br>W<br>PD@TC= 25°C<br>Maximum Power Dissipation  TO-220<br>200<br>PD@TC= 25°C<br>Maximum Power Dissipation  TO-220 Full-Pak<br>48<br>Linear Derating FactorTO-220<br>1.3<br>Linear DeratingFactorTO-220Full-Pak<br>0.32<br>VGS<br>Gate-to-Source Voltage<br>± 30<br>V<br>dv/dt<br>Peak Diode Recoverydv/dt<br>2.7<br>V/ns<br>W/°C<br>~~re~~<br>~~eses~~<br>~~es~~<br>~~———————————————~~—<br>~~ae~~<br>~~————————~~||
|TJ<br>Operating Junction and<br>-55  to + 175<br>TSTG<br>Storage Temperature Range<br>°C<br>SolderingTemperature,for 10 seconds(1.6mm from case)<br>300<br>~~eee~~||
|Mountingtorque,6-32 or M3 screw|10 lbf•in(1.1N•m)<br>|
|**Thermal Resistance**||
|**Symbol**<br>**Parameter**|**Typ.**<br>**Max.**<br>**Units**|
|RJC<br>Junction-to-Case|–––<br>0.75|
|RJC<br>Junction-to-Case,TO-220 Full-Pak|–––<br>3.14|
|RCS<br>Case-to-Sink,Flat,Greased Surface<br>RJA<br>Junction-to-Ambient,TO-220|°C/W<br>0.50<br>–––<br>–––<br>62|
|RJA<br>Junction-to-Ambient,D2-Pak|–––<br>40|
|RJA<br>Junction-to-Ambient,TO-220 Full-Pak|–––<br>65|



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IRFB/IB/S/SL41N15DPbF ~~a~~ 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified)= 25°C (unless otherwise specified)**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified)= 25°C (unless otherwise specified)**|
|---|---|
|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**<br>V(BR)DSS<br>Drain-to-SourceBreakdown Voltage<br>150<br>–––<br>–––<br>V<br>VGS=0V,ID= 250µA<br>~~ee~~<br>~~I (I~~<br>~~rs I~~<br>~~Be~~||
|V(BR)DSS/TJ<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.17<br>–––<br>V/°C Reference to 25°C,ID= 1mA<br>RDS(on) <br>Static Drain-to-Source On-Resistance<br>–––<br>–––<br>0.045<br>VGS= 10V,ID= 25A<br>VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.5<br>V<br>VDS= VGS,ID= 250µA<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>25<br>µAVDS =150 V, VGS =0V<br>–––<br>–––<br>250<br>VDS =120V,VGS =0V,TJ =150°C<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nAVGS =30V<br>Gate-to-Source Reverse Leakage<br>–––<br>-100<br>VGS = -30V<br>~~ests~~<br>~~( (~~<br>~~ee~~<br>~~ny tI ts~~<br>~~fe~~<br>~~EE~~<br>~~o/s~~<br>~~sO~~||
|**Dynamic@ TJ = 25°C(unless otherwise specified)**||
|gfs<br>Forward Trans conductance<br>18<br>–––<br>–––<br>S<br>VDS= 50V,ID= 25A<br>Qg<br>Total Gate Charge<br>–––<br>72<br>110<br>ID= 25A<br>~~es~~<br>~~rs rsQs(~~<br>~~eeee~~||
|Qgs<br>Gate-to-Source Charge<br>–––<br>21<br>31<br>VDS= 120V<br>nC||
|Qgd<br>Gate-to-Drain Charge<br>–––<br>35<br>52<br>VGS= 10V<br>td(on)<br>Turn-On Delay Time<br>–––<br>16<br>–––<br>VDD= 75V<br>~~esee~~<br>~~es~~||
|ns<br>tr<br>RiseTime<br>–––<br>63<br>–––<br>ID= 25A<br>td(off)<br>Turn-Off DelayTime<br>–––<br>25<br>–––<br>RG= 2.5<br>tf<br>Fall Time<br>–––<br>14<br>–––<br>VGS= 10V<br>Ciss<br>Input Capacitance<br>–––<br>2520<br>–––<br>pF<br>VGS= 0V<br>Coss<br>OutputCapacitance<br>–––<br>510<br>–––<br>VDS= 25V<br>Crss<br>Reverse Transfer Capacitance<br>–––<br>110<br>–––<br>ƒ= 1.0MHz<br>Coss<br>OutputCapacitance<br>–––<br>3090<br>–––<br>VGS=0V,VDS= 1.0Vƒ= 1.0MHz<br>Coss<br>Output Capacitance<br>–––<br>230<br>–––<br>VGS =0V, VDS =120V ƒ=1.0MHz<br>Coss eff.<br>Effective OutputCapacitance<br>–––<br>250<br>–––<br>VGS=0V,VDS=0V to120V<br>~~eees~~<br>~~es~~<br>~~es~~<br>~~**e**e~~<br>~~pe~~<br>~~eee~~<br>~~es~~<br>~~reece~~<br>~~eees ed~~<br>~~Pe~~|1.0MHz|
|**Avalanche Characteristics**||
|**Parameter **<br>**Typ. **<br>**Max.**<br>**Units**||
|EAS<br>Single Pulse Avalanche Energy <br>–––<br>470<br>mJ||
|IAR<br>Avalanche Current<br>–––<br>25<br>A||
|EAR<br>Repetitive Avalanche Energy <br>–––<br>20<br>mJ||



|~~a~~<br>~~Hf~~|**Parameter **<br>~~CC~~<br>~~Hf~~|**Min.**<br>~~CC~~<br>~~tt~~|**Typ. M**<br>~~CC~~<br>~~tt~~|**. Max.**<br>~~tt~~|**Units**<br>~~tt~~|**Conditions**<br>~~tt~~|
|---|---|---|---|---|---|---|
|IS<br>~~Hf~~|Continuous Source Current<br>(Body Diode)<br>~~Hf~~|–––<br>~~tt~~|–––<br>~~tt~~|41<br>~~tt~~|A<br>~~tt~~<br>~~er~~<br>~~ss~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>~~tt~~<br>~~er~~|
|ISM<br>~~Hf~~<br>~~eser~~<br>~~=~~|Pulsed Source Current<br>(Body Diode)<br>~~Hf~~<br>~~er~~|–––<br>~~tt~~<br>~~er~~<br>~~ts~~|–––<br>~~tt~~<br>~~er~~<br>~~ts~~|164<br>~~tt~~<br>~~er~~<br>~~ss~~|||
|VSD<br>~~Hf~~<br>~~eser~~<br>~~=~~<br>~~es~~|Diode Forward Voltage<br>~~Hf~~<br>~~er~~<br>|–––<br>~~tt~~<br>~~er~~<br>~~ts~~<br>|–––<br>~~tt~~<br>~~er~~<br>~~ts~~<br>~~Ht~~<br>|1.3<br>~~tt~~<br>~~er~~<br>~~ss~~<br>~~Ht  Ht—SFT~~<br>|V<br>~~tt~~<br>~~er~~<br>~~ss~~<br>~~Ht—SFT~~<br>|TJ= 25°C,IS= 25A,VGS= 0V<br>~~tt~~<br>~~er~~<br>~~Ht—SFT~~|
|trr<br>~~eser~~<br>~~=~~<br>~~es~~|Reverse Recovery Time<br>~~er~~<br>|–––<br>~~er~~<br>~~ts~~<br>|170<br>~~er~~<br>~~ts ~~<br>~~Ht~~<br>|260<br>~~er~~<br> ~~ss~~<br>~~Ht  Ht—SFT~~<br>|ns<br>~~er~~<br>~~ss~~<br>~~Ht—SFT~~<br>|TJ= 25°C ,IF= 25A<br>di/dt = 100A/µs<br>~~er~~<br>~~Ht—SFT~~|
|Qrr<br>~~eses~~|Reverse RecoveryCharge<br>~~es~~|–––<br>~~es~~|1.3<br>~~Ht~~<br>~~es~~|1.9<br>~~Ht  Ht—SFT~~<br>~~es~~|C<br>~~Ht—SFT~~<br>~~es~~||
|ton<br>~~es~~|Forward Turn-On Time<br>|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~Ht  Ht—SFT~~<br>|||||



## **Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. 

-  starting  TJ = 25°C, L = 1.5mH, RG = 25, IAS = 25A. 

-  ISD 25A, di/dt 340A/µs, VDD V(BR)DSS, TJ  175°C. 

-  Pulse width 300µs; duty cycle  2%. 

-  Coss eff.  is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

-  This is only applied to TO-220AB package. 

- This is applied to D[2] Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and 

- soldering techniques refer to application note #AN-994. 

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IRFB/IB/S/SL41N15DPbF ~~[FT~~ 

**==> picture [245 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP 15V<br>10V<br>9.0V<br>8.0V<br>7.5V<br>7.0V<br>6.5V<br>1 a<br>BOTTOM 6.0V<br> 100<br>a oem<br> 10 ey’ sent mel<br>6.0V 20µs PULSE WIDTH T  = 25J °C<br> 1 CoHett tt<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 1** Typical Output Characteristics 

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**----- Start of picture text -----**<br>
 1000<br>aaesee es es<br> 100 SeeeeepP=—<br>T  = 175  CJ °<br>eea =——_—_—<br>474<br>T  = 25  CJ °<br> 10 A ee<br>J<br>Ve ee ee ee ee ee ee ee<br>V      = 25VDS<br> 1 ane Ft | tt 20µs PULSE WIDTH<br>6 7 8 9 10 11<br>V     , Gate-to-Source Voltage (V)GS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 3** Typical Transfer Characteristics 

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**----- Start of picture text -----**<br>
 1000<br>VGS<br>TOP 15V<br>10V<br>9.0V<br>8.0V<br>7.5V<br>7.0V<br>6.5V 100 |<br>BOTTOM 6.0V<br> 100<br>Te” |<br>6 . 0V<br> 10 OE”<br>eng<br>20µs PULSE WIDTH<br> 1 A ii fl ki T  = 175J °C<br>0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS<br>D<br>I   ,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig. 2** Typical Output Characteristics 

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3.0<br>ID = 41A<br>2.5 PTT TET TEE E_ELLSY<br>2.0<br>PEPE et<br>1.5 {ttttt | Ae<br>SEERA<br>1.0 SERS eneee<br>See? 4Geeeee<br>0.5 eC<br>VGS = 10V<br>0.0 Pt FEE Tee [EEE] EEE ELL<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>T  , Junction TemperatureJ (  C)°<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig. 4** Normalized On-Resistance vs. Temperature 

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100000 VGS   = 0V,       f = 1 MHZ 20 ID = 25A<br>TELL<br>Ciss     = C gs  + Cgd,   C ds     SHORTED VDS = 120V<br>Crss     = C gd  16 VDS = 75V<br>10000 C oss    = C ds  + C gd Poco VDS = 30V Gar<br>Ciss 12<br>So Ly 7 |<br>1000 ann nl TI] PLTCE T T AT<br>Coss 8<br>ASST yA<br>Nuk SEPA<br>100 Crss<br>4<br>FOR TEST CIRCUIT<br>SEE FIGURE       13<br>10 a Ml 0 ZEEE<br> i ee ZOO<br>0 20 40 60 80 100 120<br>1 10 100 1000<br>Q   , Total Gate Charge (nC)G<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.  Typical Capacitance vs.   Fig 6.  Typical Gate Charge vs.<br>      Drain-to-Source Voltage       Gate-to-Source Voltage<br> 1000<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>S= | | |<br> 100<br>aan T  = 175  CJ °  100 rte rss 10us Lh<br> 10 100us<br>SSeSef T  = 25  C J °  SS  10 nttiCISwait Ramat 1ms TTT<br> 1<br> T T CJ = 25  C= 175  C° ° 10ms<br>= V      = 0 V GS  1 H  Single Pulse E<br>0.1 Toe te (CE Ci<br>0.2 0.6 1.0 1.4 1.8  1  10  100  1000<br>V     ,Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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**----- Start of picture text -----**<br>
50<br>TTEELELLELLLILL ~ pur<br>40 SCCEPA Er Us.<br>PEACE od<br>30 COL PSEEL EEE Lev<br>PEEL EEL INME LE LI Duty Factor <0.1 % |<br>FOE EEE RNC<br>20<br>COC ENE Fig 10a.<br>10 PEELING .<br>COC ELEN we 7\<br>0<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>P EPE EEE rer \<br>10% /\<br>eat at|<br>taion) tr tao)<br>Maximum Drain Current vs. Case Temperature<br>Fig 10b.<br> 10<br> 1 Seeseee ean<br>D = 0.50<br>0.20 PDM<br>0.1 0.10 a<br>t1<br>0.05<br>t2<br>0.02<br>0.01 SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D = t   / t 1 2<br>0.01 aei aeee 2. Peak T J = P DM x  Z thJC + TC<br>0.00001 0.0001 0.001 0.01 0.1  1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**----- Start of picture text -----**<br>
15V<br>L DRIVER<br>VDS<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>e T<br>20V<br>tp 0.01<br>r ae LY<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

**==> picture [126 x 31] intentionally omitted <==**

**----- Start of picture text -----**<br>
V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1200<br>ID<br>a<br>1000 i TOP 10A 21A<br>BOTTOM 25A<br>ANG<br>800<br>p es<br>Pp AfoN o f t o f t | tT<br>600<br>ENE<br>Nee eEe e eee<br>400<br>NN NS eee<br>PSSA<br>200<br>| | SkI NGKR<br>0 Pot ESS<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**==> picture [21 x 11] intentionally omitted <==**

**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13a.** Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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**TO-220AB Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220AB Part Marking Information** 

**==> picture [487 x 94] intentionally omitted <==**

**----- Start of picture text -----**<br>
E X A M P L E : T H IS  IS  A N  IR F 1 0 1 0<br>L O T  C O D E  1 7 8 9 IN T E R N A T IO N A L P A R T  N U M B E R<br>A S S E M B L E D  O N  W W  1 9 , 2 0 0 0 R E C T IF IE R<br>IN  T H E  A S S E M B L Y  L IN E  "C " L O G O<br>D A T E  C O D E<br>Y E A R  0  =  2 0 0 0<br>N o t e :  "P " in  a s s e m b ly  lin e  p o s it io n A S S E M B L Y<br>in d ic a t e s  "L e a d  -  F r e e " L O T  C O D E W E E K  1 9<br>L IN E  C<br>**----- End of picture text -----**<br>


TO-220AB packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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**TO-220 Full-Pak Package Outline** (Dimensions are shown in millimeters (inches)) 

## **TO-220 Full-Pak Part Marking Information** 

TO-220AB  Full-Pak packages are not recommended for Surface Mount Application. 

Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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## ~~——————————ifined~~ 

## **D2-Pak (TO-263AB) Package Outline** 

## IRFB/IB/S/SL41N15DPbF ~~==e~~ (Dimensions are 

shown in millimeters (inches)) 

## **D2-Pak (TO-263AB) Part Marking Information** 

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**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>PART NUMBER<br>LOT CODE 8024 INTERNATIONAL o Y<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY WU<br>LOT CODE T aen T WEEK 02<br>o o o<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL o Y<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>PRODUCT (OPTIONAL)<br>ASSEMBLY WU<br>LOT CODE T a y YEAR 0 =  2000<br>U U WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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**TO-262 Package Outline** (Dimensions are shown in millimeters (inches) 

## **TO-262 Part Marking Information** 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>INTERNATIONAL<br>ASSEMBLED ON WW 19, 1997 RECTIFIER<br>IN THE ASSEMBLY LINE "C" LOGO<br>DATE CODE<br>ASSEMBLY YEAR 7 = 1997<br>LOT CODE WEEK 19<br>LINE C<br>il<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER<br>LOGO<br>DATE CODE<br>ASSEMBLY P = DESIGNATES LEAD-FREE<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 = 1997<br>WEEK 19<br>A = ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to  website at http://www.irf.com/package/ 

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IRFB/IB/S/SL41N15DPbF ~~a~~ 

**D2-Pak (TO-263AB) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [386 x 164] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [71 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [376 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB. 3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

12 

2017-04-27 

IRFB/IB/S/SL41N15DPbF ~~a~~ 

IRFB/IB/S/SL41N15DPbF ~~Cinfineon a~~ **Qualification Information** Industrial **Qualification Level** (per JEDEC JESD47F)[† ] TO-220AB TO-220 Full-Pak N/A **Moisture Sensitivity Level** TO-262 MSL1 D2-Pak (per JEDEC J-STD-020D)[†† ] ~~=~~ **RoHS Compliant** Yes † Applicable version of JEDEC standard at the time of product release. **Revision History** 

## **Date Comments** 

-  Changed datasheet with Infineon logo - all pages. 

> 04/27/2017  Corrected Package Outline on page 8,9,10,11.  Added disclaimer on last page. 

## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

All referenced product or service names and trademarks are the property of their respective owners. 

## **IMPORTANT NOTICE** 

**Edition 2016-04-19** The information given in this document shall in no **Published by** event be regarded as a guarantee of conditions or **Infineon Technologies AG characteristics  (“Beschaffenheitsgarantie”) . 81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon **All Rights Reserved.** Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement **Do you have a question about this** of intellectual property rights of any third party. **document? Email:** erratum@infineon.com 

**Email:** erratum@infineon.com In addition, any information given in this document **is subject to customer’s compliance with its** obligations stated in this document and any applicable legal requirements, norms and **Document reference** standards concerning customer’s products and **ifx1** any use of the product of Infineon Technologies in **customer’s applications.** 

The data contained in this document is exclusively intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). 

Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, **Infineon Technologies’ products may** not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 

13 

2017-04-27 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS41N15DTRLP/power-mosfet-n-channel-150-v-41-a-0045-ohm-to)
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- [Supplier page](https://es.farnell.com/en-ES/infineon/irfs41n15dtrlp/mosfet-n-ch-150v-41a-to-263ab/dp/2781139RL)
---

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