# Power MOSFET, N Channel, 200 V, 72 A, 0.022 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2725985/)

**URL**: https://novapart.co/products/IRFS4127TRLPBF/power-mosfet-n-channel-200-v-72-a-0022-ohm-to
**SKU**: IRFS4127TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5000
**Stock**: 500+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:72A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.0186ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; P

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 72A |
| Drain Source On State Resistance | 0.022ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725985/)

PD - 96177 

## IRFS4127PbF IRFSL4127PbF 

HEXFET Power MOSFET 

## **Applications** 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits 

|HEXFET|Power MOSFET|
|---|---|
|**VDSS**|**200V**|
|**RDS(on)   typ.**<br>**max.**|**18.6m**|
||**22m**<br>Q|
|**ID **|**72A**<br>~~po~~|



## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

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D<br>D<br>S<br>S D<br>G<br>G<br>D [2] Pak TO-262<br>IRFS4127PbF IRFSL4127PbF<br>**----- End of picture text -----**<br>


Fully Characterized Capacitance and Avalanche SOA 

|Ruggedness<br>Fully Characterized Capacitance and Avalanche<br>SOA<br>D<br>D||
|---|---|
|Enhanced body diode dV/dt and dI/dt Capability<br>S<br>|||
|Lead-Free<br>D<br>G<br>S<br>G||
|D[2]Pak<br>TO-262||
|IRFS4127PbF<br>IRFSL4127PbF||
|||
|**G**<br>**D**<br>**S**||
|Gate<br>Drain<br>Source||
|**Absolute Maximum Ratings**||
|**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V<br>A<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>TJ<br>Operating Junction and<br>°C<br>TSTG<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>(1.6mm from case)<br>Mountingtorque,6-32 or M3 screw<br>**Max.**<br>72<br>51<br>300<br>10lb in(1.1N m)<br>300<br>375<br>57<br>-55  to + 175<br>± 20<br>2.5<br>~~a~~<br>~~ee~~<br>~~ie~~<br>~~a=~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~||
|**Avalanche Characteristics**||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>250||
|IAR<br>Avalanche Current<br>A<br>See Fig. 14, 15, 22a, 22b,||
|EAR<br>Repetitive Avalanche Energy<br>mJ||
|**Thermal Resistance**||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**||
|www.irf.com<br>1<br>RθJC<br>Junction-to-Case<br>–––<br>0.4<br>RθJA<br>Junction-to-Ambient<br>–––<br>40<br>°C/W<br>~~a~~<br>~~ee a~~||
|09/16/08||



**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**||**Conditions**|
|---|---|---|---|
|V(BR)DSS<br>∆V(BR)DSS/∆TJ<br>RDS(on)|Drain-to-Source Breakdown Voltage<br>200<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.23<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>18.6<br>22<br>mΩ<br>VGS= 0V, ID= 250µA<br>Reference to 25°C, ID= 5mA<br>VGS= 10V, ID= 44A<br>~~GD~~<br>~~GO~~<br>~~GO (OO~~<br>~~a~~<br>~~QO~~<br>~~QO OO~~<br>~~©~~|||
|VGS(th)|Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>~~a~~<br>~~GDQQ~~||VDS= VGS, ID= 250µA|
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>RG(int)<br>Internal Gate Resistance<br>–––<br>3.0<br>–––<br>Ω<br>**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>µA<br>nA<br>VDS= 200V, VGS= 0V<br>VDS= 200V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~eS eS~~<br>~~||~~<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~pe~~||||
|**Symbol**|**Parameter**<br>**Min. Typ. Max. Units**||**Conditions**|
|gfs<br>Qg|Forward Transconductance<br>79<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>100<br>150<br>~~PCa~~||VDS= 50V, ID= 44A<br>ID= 44A|
|Qgs<br>Qgd|Gate-to-Source Charge<br>–––<br>30<br>–––<br>Gate-to-Drain("Miller")Charge<br>–––<br>31<br>–––<br>nC<br>~~a~~<br>~~eG~~||VGS= 10V<br>VDS= 100V<br>@|
|Qsync|Total Gate Charge Sync. (Qg- Qgd)<br>–––<br>69<br>–––<br>~~ee~~||ID= 44A, VDS=0V, VGS= 10V|
|td(on)|Turn-On DelayTime<br>–––<br>17<br>–––<br>~~GO~~||VDD= 130V|
|tr<br>td(off)<br>tf<br>Ciss|Rise Time<br>–––<br>18<br>–––<br>Turn-Off DelayTime<br>–––<br>56<br>–––<br>Fall Time<br>–––<br>22<br>–––<br>Input Capacitance<br>–––<br>5380<br>–––<br>ns<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~GO~~||ID= 44A<br>RG= 2.7Ω<br>VGS= 10V<br>VGS= 0V<br>~~@~~|
|Coss|Output Capacitance<br>–––<br>410<br>–––<br>~~a~~||VDS= 50V|
|Crss<br>Cosseff. (ER)<br>Cosseff. (TR)|Reverse Transfer Capacitance<br>–––<br>86<br>–––<br>pF<br>Effective Output Capacitance(EnergyRelated)<br>–––<br>360<br>–––<br>Effective Output Capacitance(Time Related)<br>–––<br>590<br>–––<br>~~eG~~<br>~~> DO~~<br>~~a~~||ƒ= 1.0MHz(See Fig.5)<br>VGS= 0V, VDS= 0V to 160V<br>See Fig.11)<br>VGS= 0V, VDS= 0V to 160V<br>~~©~~<br>®|



## **Diode Characteristics** 

|**Symbol**|**Parameter**|**Min. **|**Typ. **|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|IS|Continuous Source Current<br>(BodyDiode)<br>~~FF~~|–––<br>~~FF~~|–––<br>~~FF~~|76<br>~~FF~~|A<br>~~|~~<br>~~QQ~~|S<br>D<br>G<br>integral reverse<br>p-njunction diode.<br>MOSFET symbol<br>showing  the|
|ISM|Pulsed Source Current<br>(BodyDiode)<br>~~FF~~|–––<br>~~FF~~|–––<br>~~FF~~<br>~~QQ~~|300<br>~~FF~~<br>~~QQ~~|||
|VSD|Diode Forward Voltage<br>~~FF~~<br>~~eG~~|–––<br>~~FF~~<br>~~eG~~|–––<br>~~FF~~<br>~~eG~~<br>~~QQ~~|1.3<br>~~FF~~<br>~~eG~~<br>~~QQ~~|V<br>~~|~~<br>~~eG~~<br>~~QQ~~|TJ= 25°C, IS= 44A, VGS= 0V<br>~~eG~~|
|trr|Reverse Recovery Time<br>~~eG~~<br>~~OE~~|–––<br>~~eG~~<br>~~OE~~<br>~~|~~|136<br>~~eG~~<br>~~QQ~~<br>~~OE~~<br>~~|~~|–––<br>~~eG~~<br>~~QQ~~<br>~~OE~~<br>|ns<br>~~eG~~<br>~~QQ~~<br>~~OE~~|TJ= 25°C<br>VR= 100V,<br>TJ= 125°C<br>IF= 44A<br>TJ= 25°C<br>di/dt = 100A/µs<br>TJ= 125°C<br>TJ= 25°C<br>~~eG~~<br>~~OE~~<br>~~ee~~|
|||–––<br>~~OE~~<br>~~|~~|139<br>~~OE~~<br>~~||~~|–––<br>~~OE~~<br>~~|~~|||
|Qrr|Reverse Recovery Charge<br>~~ee~~|–––<br>~~|~~<br>~~ee~~<br>~~**|**~~|458<br>~~|~~<br>~~ee~~<br>~~**|**~~|–––<br><br>~~ee~~|nC<br>~~ee~~||
|||–––<br>~~ee~~<br>~~**|**~~|688<br>~~ee~~<br>~~**|**~~|–––<br>~~ee~~|||
|IRRM|Reverse RecoveryCurrent<br>~~a~~|–––<br>~~**|**~~<br>~~a~~|8.3<br>~~**|**~~<br>~~a~~|–––<br>~~a~~|A<br>~~a~~||
|ton|Forward Turn-On Time<br>~~a~~<br>~~a~~|Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~a~~<br>~~a~~<br>~~G~~|||||



> Notes: ® Repetitive rating;  pulse width limited by max. junction ® Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. as Coss while VDS is rising from 0 to 80% VDSS. @ Limited by TJmax, starting TJ = 25°C, L = 0.26mH © Coss eff. (ER) is a fixed capacitance that gives the same energy as RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use Coss while VDS is rising from 0 to 80% VDSS. above this value . 

@ When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom mended footprint and soldering techniques refer to application note #AN-994. 

ISD ≤ 44A, di/dt ≤ 760A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

θ © R θ _ JC value shown is at time Zero 

www.irf.com 

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1000<br>VGS<br>TOP           15V<br>10V<br>100 8.0V<br>7.0V<br>6.0V<br>5.5V<br>5.0V<br>10 BOTTOM 4.5V<br>1<br>0.1<br>4.5V ≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.01<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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Fig 1.   Typical Output Characteristics<br>1000<br>VDS = 50V<br>≤ 60µs PULSE WIDTH<br>100<br>——=<br>TJ = 175°C<br>7 =<br>10<br>TJ = 25°C<br>1<br>0.1 a<br>3.0 4.0 5.0 6.0 7.0 8.0<br>VGS, Gate-to-Source Voltage (V)<br>)(Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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8000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>6000 — oss   ds  gd<br>Ciss<br>Ui on<br>4000 SLT Tn<br>NUIT LT<br>2000 \<br>Coss<br>C<br>SO e ll rss ie<br>0<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>100 7.0V6.0V<br>5.5V<br>5.0V<br>BOTTOM 4.5V<br>10<br>4.5V<br>1<br>≤ 60µs PULSE WIDTH<br>Tj = 175°C<br>0.1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>3.5<br>I = 44A<br>D<br>3.0 V GS  = 10V<br>banERTERL?<br>2.5<br>oe<br>2.0<br>1.5<br>1.0 er LLL<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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16<br>I = 44A<br>D<br>VDS= 160V<br>12 VDS= 100V a<br>VDS= 40V<br>8 p we<br>Ls<br>4 an<br>Lf<br>0 ZEEEArm<br>0 20 40 60 80 100 120<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100 TJ = 175°CJ = 175°C= 175°C<br>10<br>n/a) aoee<br>T = 25°C<br>J<br>a ee ee Le Le ee ee ee<br>1<br>ee<br>VGS = 0VGS = 0V= 0V<br>0.1 oy / /<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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1000 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100µsec<br>100 TJ = 175°CJ = 175°C= 175°C 100<br>1 m sec<br>10 10<br>n/a) aoee OR S E TT<br>T = 25°C<br>J<br>10msec<br>a ee ee Le Le ee ee ee el l<br>1 1<br>ee a ne<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0VGS = 0V= 0V Single Pulse DC<br>0.1 oy / / 0.1 | SR<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Fig 8.   Maximum Safe Operating Area<br>Forward Voltage<br>80 260<br>Id = 5mA<br>6040 |T aN| 240220 LEEeT<br>20 200<br>0 180<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100120140160180<br> TC , Case Temperature (°C) TJ , Temperature ( °C )<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Drain-to-Source Breakdown Voltage<br>Case Temperature<br>8.0 1000<br>                 I D<br>TOP          8.2A<br>800                 13A<br>6.0 BOTTOM   44A<br>600<br>4.0<br>EEA 400 WAL EEL<br>2.0<br>aaven RSNEee<br>200<br>Bann ES<br>0.0 0<br>0 40 80 120 160 200 25 50 75 100 125 150 175<br>VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>Energy (µJ)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 11.** Typical COSS Stored Energy 

**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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1<br>D = 0.50<br>F ST TH<br>0.1<br>0.20<br>0.10 R1 R1 R2 R2 R3 R3 R4R4 Ri (°C/W) τι (sec)<br>0.01 |)1 0.02 0.05 LeCoA| ||| τJ τJτ1 τ See 1 τ2 τ2 τ3 τ3 τ4 τ4 e τCτ 0.083333 0.181667 ee 0.02 0.000078 0.001716 0.000019 |<br>0.01 Ci= Ciτi/Rii/Ri 0.113333 0.008764<br>F LE A ELE Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>0.001 Van | PE<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>eet Duty Cycle = Single Pulse ee pulsewidth, tav, assuming  ∆Tj = 150°C and<br>a NSH HH<br>Tstart =25°C (Single Pulse)<br>0.01<br>10 en eeniline 400 al<br>0.05<br>CTSA TCT<br>0.10<br>PE ASS Tr<br>1 REP Allowed avalanche Current vs avalanche  /A RE es.<br>pulsewidth, tav, assuming ∆Τ j = 25°C and<br>Tstart = 150°C.<br>F | SS<br>a cas ae oa 0s 0 0 pee OO OO Oe OO 0<br>PTE ET E E<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs.Pulsewidth 

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250<br>TOP          Single Pulse<br>BOTTOM   1% Duty Cycle<br>I = 44A<br>200 D<br>NT<br>150 ANU<br>LINN ELE<br>100<br>\<br>50<br>BUTUDSNNUE<br>ELELELANSNY<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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6.0 50<br>Pee ID = 1.0A<br>ID = 1.0mA<br>5.0 aan eeEE I D  = 250µA 40 TLE| (ad<br>4.0 30<br>PSST rae<br>PSST SURED? 2a<br>3.0 eeePPP ~NEeeSN 20 | ae rT | | YY<br>IF = 29A<br>2.0 SERPt |  EEEEBNG| dt | | UENSN 10 v 7 | w | | fe VR = 100V<br>TJ = 125°C<br>TJ =  25°C<br>1.0 PtPt ttttt teEtttttLIN 0 Ty | | |<br>-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000<br>TJ , Temperature ( °C ) dif / dt - (A / µs)<br>Fig. 17 - Typical Recovery Current vs. di;/dt<br>Fig 16.   Threshold Voltage Vs. Temperature<br>60 3000<br>50 2500<br>40 2000<br>BRRRRERDE PELE dete<br>30 p2aen 1500 BRReaeeP<br>SEREPZa pre<br>20 Cer 1000 aT<br>IF = 44A IF = 29A<br>VR = 100V VR = 100V<br>10 “Ali if TJ = 125°C  | 500 eT TJ = 125°C<br>TJ =  25°C TJ =  25°C<br>0 ATH = 0 rhtt ||<br>100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 = 900 1000<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>IRRM - (A) QRR - (nC)<br>VGS(th) Gate threshold Voltage (V)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


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3000<br>° a<br>2500<br>Le dere<br>2000<br>SE or ptt | Le<br>rary<br>1500 B2eZ anne<br>1000<br>I = 44A<br>F<br>m At | ft<br>VR = 100V<br>500<br>T  = 125°C<br>J<br>TJ =  25°C<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {+ P.W. Period ——— — D = —— Period<br>) [©)]    •  CircuitLow  LayoutStray ConsiderationsInduct | t V t GS=10<br> •<br>- •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 a VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( 4 •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test SOO |<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @| t<br>* Vg = 5V for Logic Level Devices<br>Fig 21.  Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS(BR)DSS<br>15V —_ tp -><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>¢ 20VVGS dt<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


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V(BR)DSS(BR)DSS<br>—_ tp -><br>IAS<br>**----- End of picture text -----**<br>


## **Fig 22b.** Unclamped Inductive Waveforms 

**Fig 22a.** Unclamped Inductive Test Circuit 

**==> picture [130 x 58] intentionally omitted <==**

**----- Start of picture text -----**<br>
+<br>-<br>≤ 1<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


## **Fig 23a.** Switching Time Test Circuit 

**==> picture [134 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF .3µF ||<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>WAV IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

**==> picture [192 x 121] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>90%<br>\<br>10% /\<br>VGS «le ys<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**==> picture [164 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Fig 23b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


**==> picture [162 x 131] intentionally omitted <==**

**----- Start of picture text -----**<br>
Id<br>Vds<br>fl Vgs<br>i<br>Vgs(th)<br>a plag [p] [l] [e] w i e » !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

www.irf.com 

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## TO-262 Package Outline Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

www.irf.com 

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Dimensions are shown in millimeters (inches) 

**==> picture [405 x 171] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>1.50 (.059)<br>3.90 (.153) 0.368 (.0145)<br>!00°00He | i , Te 0.342 (.0135)<br>2________* OS OO 4/8 -<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>| x<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


**==> picture [75 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [395 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) als<br>4<br>330.00(14.173) \ 60.00 (2.362)      MIN.<br>  MAX.<br>i) x<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2008 

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## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS4127TRLPBF/power-mosfet-n-channel-200-v-72-a-0022-ohm-to)
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- [Supplier page](https://es.farnell.com/infineon/irfs4127trlpbf/mosfet-n-ch-200v-72a-to-263ab/dp/2725985)
---

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