# Power MOSFET, N Channel, 150 V, 195 A, 0.0121 ohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2725984/)

**URL**: https://novapart.co/products/IRFS4115TRLPBF/power-mosfet-n-channel-150-v-195-a-00121-ohm-to
**SKU**: IRFS4115TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.5300
**Stock**: 25+
**Lead Time**: 134 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.0103ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 375W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 195A |
| Drain Source On State Resistance | 0.0121ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725984/)

## PD - 96198A IRFS4115PbF IRFSL4115PbF HEXFET ® Power MOSFET 

## **Applications** 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits 

## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

|**VDSS**|**150V**|
|---|---|
|**RDS(on)   typ.**<br>**max.**|**10.3m**|
||**12.1m**<br>~~Q~~|
|**ID (Silicon Limited)**|**99A**|
|**ID (Package Limited)**|**195A**<br>~~|~~|



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||**G**<br>**D**<br>**S**|
|---|---|
||Gate<br>Drain<br>Source|
|**Absolute Maximum Ratings**||
|**Symbol**|**Parameter**<br>**Units**<br>**Max.**|
|ID @ TC = 25°C<br>ID @ TC = 100°C<br>ID @ TC = 25°C<br>IDM<br>PD @TC = 25°C|Continuous Drain Current, VGS @ 10V(Silicon Limited)<br>Continuous Drain Current, VGS @ 10V(Silicon Limited)<br>Continuous Drain Current, VGS @ 10V(Wire Bond Limited)<br>Pulsed Drain Current<br>Maximum Power Dissipation<br>W<br>A<br>375<br>99<br>70<br>396<br>195<br>~~LO~~<br>~~_——————~~<br>~~a~~|
||Linear DeratingFactor<br>W/°C<br>2.5<br>~~a~~|
|VGS|Gate-to-Source Voltage<br>V<br>± 20<br>~~a~~|
|dv/dt<br>TJ<br>TSTG|Peak Diode Recovery<br>V/ns<br>Operating Junction and<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>(1.6mm from case)<br>Mountingtorque,6-32 or M3 screw<br>°C<br>300<br>18<br>-55  to + 175<br>10lb n(1.1N m)<br>~~|_~~<br>~~TTT~~<br>~~Y~~<br>~~/“—/_—TTTT~~|
|**Avalanche Characteristics**||
|EAS(Thermallylimited)|Single Pulse Avalanche Energy<br>mJ<br>830|
|IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>**Thermal Resistance**<br>**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>0.4<br>RθJA<br>Junction-to-Ambient<br>–––<br>40<br>°C/W<br>See Fig. 14, 15, 22a, 22b,<br>~~ee~~<br>~~eee~~<br>~~Ce~~<br>~~oOo*=EoO~~<br>~~SS~~<br>~~Se~~<br>~~iT~~<br>~~a~~||



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**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**|
|---|---|
|V(BR)DSS<br>ΔV(BR)DSS/ΔTJ<br>RDS(on)<br>VGS(th)<br>IDSS<br>IGSS|Drain-to-Source Breakdown Voltage<br>150<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.18<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>10.3<br>12.1<br>mΩ<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>VGS= 20V<br>VGS= -20V<br>VGS= 0V, ID= 250μA<br>Reference to 25°C, ID= 3.5mA<br>VGS= 10V, ID= 62A<br>VDS= VGS, ID= 250μA<br>VDS= 150V, VGS= 0V<br>VDS= 150V, VGS= 0V, TJ= 125°C<br>~~Gn GO~~<br>~~eG~~<br>~~GO~~<br>~~QD~~<br>~~G(R”~~<br>~~eG~~<br>~~QO (OR~~<br>~~PR~~<br>~~||~~<br>~~——————————~~<br>~~a~~|
|RG|Internal Gate Resistance<br>–––<br>2.3<br>–––<br>Ω<br>~~Gs~~<br>~~GG~~|
|**Dynamic @ TJ = 25°C(unless otherwise specified)**||
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**|
|gfs|Forward Transconductance<br>97<br>–––<br>–––<br>S<br>VDS= 50V, ID= 62A<br>~~GD GQ~~|
|Qg|Total Gate Charge<br>–––<br>77<br>120<br>nC<br>ID= 62A<br>~~a~~|
|Qgs|Gate-to-Source Charge<br>–––<br>28<br>–––<br>VDS= 75V<br>~~ee~~|
|Qgd<br>Qsync<br>td(on)|Gate-to-Drain("Miller")Charge<br>–––<br>26<br>–––<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>51<br>–––<br>Turn-On DelayTime<br>–––<br>18<br>–––<br>ns<br>VGS= 10V<br>VDD= 98V<br>ID= 62A, VDS=0V, VGS= 10V<br>~~a~~<br>e<br>~~ee~~<br>~~ee~~<br>~~a~~|
|tr|Rise Time<br>–––<br>73<br>–––<br>ID= 62A<br>~~ee~~|
|td(off)<br>tf<br>Ciss|Turn-Off DelayTime<br>–––<br>41<br>–––<br>Fall Time<br>–––<br>39<br>–––<br>Input Capacitance<br>–––<br>5270<br>–––<br>pF<br>VGS= 10V<br>VGS= 0V<br>RG= 2.2Ω<br>~~a~~<br>~~ee~~<br>~~®~~<br>~~a~~|
|Coss|Output Capacitance<br>–––<br>490<br>–––<br>VDS= 50V<br>~~ee~~|
|Crss<br>Reverse Transfer Capacitance<br>–––<br>105<br>–––<br>Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)–––<br>460<br>–––<br>Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>530<br>–––<br>**Diode Characteristics**<br>ƒ= 1.0 MHz,See Fig. 5<br>VGS= 0V, VDS= 0V to 120V<br>See Fig. 11<br>VGS= 0V, VDS= 0V to 120V<br>~~a~~<br>~~ee~~<br>~~@~~<br>~~ee~~<br>~~©~~||
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ. Max. Units**<br>**Conditions**|
|IS|D<br>Continuous Source Current<br>–––<br>–––<br>99<br>A<br>MOSFET symbol|
||(Body Diode)<br>showing  the|
|ISM|S<br>G<br>Pulsed Source Current<br>–––<br>–––<br>396<br>A<br>(Body Diode)<br>integral reverse<br>p-njunction diode.<br>~~ee~~|
|VSD<br>trr<br>Qrr<br>IRRM|Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>Reverse Recovery Time<br>–––<br>86<br>–––<br>ns<br>TJ= 25°C<br>VR= 130V,<br>–––<br>110<br>–––<br>TJ= 125°C<br>IF= 62A<br>Reverse Recovery Charge<br>–––<br>300<br>–––<br>nC<br>TJ= 25°C<br>di/dt = 100A/μs<br>–––<br>450<br>–––<br>TJ= 125°C<br>Reverse RecoveryCurrent<br>–––<br>6.5<br>–––<br>A<br>TJ= 25°C<br>TJ= 25°C, IS= 62A, VGS= 0V<br>~~Gs GQ~~<br>~~ee~~<br>~~re~~<br>~~ee~~<br>~~|~~~~**|**~~<br>~~ee~~<br>°<br>~~|~~<br>~~a~~|
|ton|Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~eG~~|



Notes: ~~®©~~ Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time 

Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- @ Coss eff. (ER) is a fixed capacitance that gives the same energy as 

Coss while VDS is rising from 0 to 80% VDSS. 

Repetitive rating;  pulse width limited by max. junction temperature. 

When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom mended footprint and soldering techniques refer to application note #AN-994. 

Recommended max EAS limit, starting TJ = 25°C, 

θ 

L = 0.17mH, RG = 25 Ω , IAS = 100A, VGS =15V. 

θ JC 

ISD ≤ 62A, di/dt ≤ 1040A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>100 6.5V<br>6.0V<br>5.5V<br>BOTTOM 5.0V esee —_Aeeell<br>10 ec a Ti|<br>Sa<br>1<br>5.0V ≤ 60μs PULSE WIDTH<br>0.1 =aott Tj = 25°C ooeal<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>ee ee 72 ee ee<br>100 TJ = 175°C<br>- —_ ff |_| |_| _<br>Se<br>T = 25°C<br>10 J<br>si ee<br>ee |  ee ee ee ee ee<br>1<br>a7 Te<br>VDS = 50V<br>0.1 iFPA Po ≤ 60μs PULSE WIDTH FY<br>2 4 6 8 10 12 14 16<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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100000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>C = C + C<br>10000 oss   ds  gd<br>a re Ciss cee<br>Sta Soodea<br>1000 C oss<br>a | ll<br>C rss<br>PA EPH<br>100<br>10 PrPRPPErrEPR LET<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.5V<br>6.0V<br>100 5.5V<br>BOTTOM 5.0V ,a<br>FaeOHH<br>5.0V<br>10 |AIII<br>≤ 60μs PULSE WIDTH<br>Tj = 175°C<br>1 Geeaie alll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>3.0<br>I = 62A<br>D<br>V = 10V<br>GS<br>2.5<br>TTT<br>2.0<br>PTT eT Ty tT YI Lt<br>PEELELT TVET<br>1.5<br>}<br>1.0<br>Seee-4eeeeee<br>0.5 Pagnheeeeeee ey<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>14.0<br>I = 62A<br>D<br>V = 120V<br>12.0 DS<br>V = 75V<br>DS<br>V = 30V<br>10.0 DS<br>| _Lp |<br>8.0 P| xYl |<br>6.0 Zea<br>4.0 Pf | fF |<br>2.0 40a<br>0.0<br>0 20 40 60 80 100<br> QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000<br>100 TJ = 175 ° C<br>10<br>T = 25°C<br>J<br>1<br>VGS = 0V<br>0.1<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>VSD, Source-to-Drain Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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120<br>100<br>ety ty<br>80<br>PN<br>60 CASE<br>40 aa<br>20 ERaeeN<br>0<br>pi} tt |<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs.<br>Case Temperature<br>6.0<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>-20 0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100μsec<br>100<br>DC 1msec<br>10msec<br>10<br>Tc = 25°C<br>Tj = 175°C<br>Single Pulse<br>1<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>200<br>Id = 3.5mA<br>190<br>Po LE<br>180<br>BORDERED<br>170 ZA<br>160 Peer<br>150 EPAannae REnDZannn a E e<br>140<br>CLE EE<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

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6.0<br>5.0<br>feo<br>4.0<br>SCTE<br>ID = 250μA<br>3.0 ID = 1.0mA<br>ID = 1.0A<br>2.0<br>1.0<br>LLL ELL L TNSLN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 12.** Threshold Voltage vs. Temperature 

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1<br>Fo PTR PP PP pp EEE tt<br>D = 0.50<br>0.1 eeee ee - eellit TT HI<br>0.20<br>ee Ae nail ee ent ee eee eee<br>a 0.10 A mlee<br>0.05<br>0.01 eeaeeEe 0.010.02 eegeee a ee|llee eee eee ee ee τ J τ J τ 1 τ 1 R 1 R 1 τ 2 τ R 2 2 R 2 τ C τ C Ri  0.245      0.00591490.155      0.0006322 (°C/W)  τ i (sec) ailAia<br>a sen | ec en ee T T — 1<br>Ci=  τ i / Ri<br>ee Ci=  τ i / Ri -— rT<br>0.001 |ee|<br>SINGLE PULSE Notes:<br>ana ( THERMAL RESPONSE ) 0 A OD 1. Duty Factor D = t1/t2 iH<br>0.0001 FT EE SE | EE Tt 2. Peak Tj = P dm x Zthjc + Tc HW<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig. 13   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>50<br>IF = 42A IF = 62A<br>VR = 130V VR = 130V o a<br>40<br>TJ = 25°C TJ = 25°C<br>TJ = 125°C TJ = 125°C<br>30<br>f 20<br>10<br>0<br>0 200 400 600 800 1000 0 200 400 600 800 1000<br>diF /dt (A/μs) diF /dt (A/μs)<br>IRR (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


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50<br>IF = 42A<br>VR = 130V<br>40<br>TJ = 25°C<br>TJ = 125°C<br>30<br>20 f<br>10<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>IRR (A)<br>**----- End of picture text -----**<br>


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2500<br>IF = 42A<br>VR = 130V<br>2000<br>TJ = 25°C<br>1500 TJ = 125°C | LATSr Wg<br>1000 | [o”]<br>500 =|<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (A)<br>**----- End of picture text -----**<br>


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3000<br>IF = 62A<br>VR = 130V<br>2400<br>TJ = 25°C<br>1800 TJ = 125°C > Od a 7 4<br>?<br>1200 y<br>600 A<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/μs)<br>QRR (A)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + { P.W. + Period ——— — D = —— Period<br>) [©)]    •  CircuitLow  LayoutStray ConsiderationsInduct | V t t GS=10<br> •<br>- •   Low Leakage Inductance @ D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>oi - [1] Current Transformer - ® + Current r Current di/dt AN<br>® D.U.T. VDS Waveform<br>Diode Recoverydv/dt ‘<br>00 we VDD<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (A •   dv/dt controlled by Rg Vp p - =<br>•<br>D.U.T. - Device Under Test SCO |<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @\ t<br>* Vg = 5V for Logic Level Devices<br>Fig 18.  Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V << tp -—><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>¢ 2V0VGS dt<br>tp 0.01 Ω IAS<br>**----- End of picture text -----**<br>


## **Fig 19a.** Unclamped Inductive Test Circuit 

**Fig 19b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


## **Fig 20a.** Switching Time Test Circuit 

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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 μ F .3 μ F ||<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>W IG A N ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 21a.** Gate Charge Test Circuit 

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VDS<br>90%<br>\<br>10% /\<br>VGS |a r e | |<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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Fig 20b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>fl Vgs<br>i<br>Vgs(th)<br>‘e g pl a p l e w i e » !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 21b.** Gate Charge Waveform 

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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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Dimensions are shown in millimeters (inches) 

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TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>1.50 (.059)<br>3.90 (.153) 0.368 (.0145)<br>!0 0°0Hd 0| tL Te 0.342 (.0135)<br>24_____ OS OO 4/8 -<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>**----- End of picture text -----**<br>


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FEED DIRECTION<br>**----- End of picture text -----**<br>


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13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) ls<br>4<br>330.00(14.173) \ 60.00 (2.362)      MIN.<br>  MAX.<br>i) x<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


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4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/2011 

www.irf.com 

9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS4115TRLPBF/power-mosfet-n-channel-150-v-195-a-00121-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs4115trlpbf/mosfet-n-ch-150v-195a-to-263ab/dp/2725984)
---

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