# Power MOSFET, N Channel, 200 V, 18 A, 0.105 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2839495/)

**URL**: https://novapart.co/products/IRFS4020TRLPBF/power-mosfet-n-channel-200-v-18-a-0105-ohm-to-263
**SKU**: IRFS4020TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6330
**Stock**: 200+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Po

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 100W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 200V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 18A |
| Drain Source On State Resistance | 0.105ohm |
| Gate Source Threshold Voltage Max | 4.9V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839495/)

## IRFS4020PbF IRFSL4020PbF 

## **Features** 

- Key parameters optimized for Class-D audio 

- amplifier applications 

- Low RDSON for improved efficiency 

- Low QG and QSW for better THD and improved 

- efficiency 

- Low QRR for better THD and lower EMI 

|IRFS4020PbF<br>IRFSL4020PbF<br>PD - 97393<br>AUDIOMOSFET|IRFS4020PbF<br>IRFSL4020PbF<br>PD - 97393<br>AUDIOMOSFET|IRFS4020PbF<br>IRFSL4020PbF<br>PD - 97393<br>AUDIOMOSFET|
|---|---|---|
|**Key Parameters**|||
|VDS|200|V|
|RDS(ON)typ. @ 10V|85|mΩ|
|Qgtyp.|18|nC|
|Qswtyp.|6.7|nC|
|RG(int)typ.|3.2|Ω|
|TJmax|175|°C|



- 175°C operating junction temperature for 

ruggedness 

- Can deliver up to 300W per channel into Ω oad in 

- half-bridge configuration amplifier 

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D D<br>D<br>G GD S GD S<br>D [2] Pak TO-262<br>S<br>IRFS4020PbF IRFSL4020PbF<br>G D S<br>Gate Drain Source<br>**----- End of picture text -----**<br>


## **Description** 

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications. 

## **Absolute Maximum Ratings** 

||**Parameter**<br>~~**e**s~~|**Max.**<br>~~QO~~|**Units**<br>~~|~~|
|---|---|---|---|
|VDS|Drain-to-Source Voltage<br>~~**e**s~~|200<br>~~QO~~|V<br>~~|~~<br>~~ee~~|
|VGS|Gate-to-Source Voltage<br>~~**e**s~~<br>~~s~~<br>~~es~~<br>~~ee~~|±20<br>~~QO~~<br>~~s~~<br>~~QO~~<br>~~ee~~||
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>~~**e**s~~<br>~~s~~<br>~~es~~<br>~~ee~~|18<br><br>~~s~~<br>~~QO~~<br>~~ee~~|A<br>~~|~~<br>~~ee~~<br>|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~es~~<br>~~en~~<br>~~ee~~|13<br>~~QO~~<br>~~en~~<br>~~ee~~||
|IDM<br>~~ee~~|Pulsed Drain Current<br>~~ee~~<br>~~en~~<br>~~ee~~|52<br>~~ee~~<br>~~Q~~<br>||
|PD@TC= 25°C<br>~~ee~~|Power Dissipation<br>~~ee~~<br>~~en~~<br>~~ee~~|100<br>~~ee~~<br>~~Q~~<br>|W<br>~~ee~~<br>|
|PD@TC= 100°C<br>~~ee~~|Power Dissipation<br>~~en~~<br>~~ee~~|52<br>~~Q~~<br>||
|~~ee~~|Linear DeratingFactor<br>~~eeDf~~|0.70<br>~~Df~~|W/°C<br>~~Df~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>(1.6mm from case)|300||



> Notes ® hrough ©) are on page 2 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>~~a~~|**Min.**<br>~~ss~~|**Typ.**<br>~~ss~~|**Max. **|**Units**|**Conditions**|
|---|---|---|---|---|---|---|
|BVDSS|Drain-to-Source Breakdown Voltage<br>~~a~~<br>~~a~~|200<br>~~ss~~<br>~~DG~~<br>~~Gs~~|–––<br>~~ss~~<br>~~DG~~<br>~~Gs~~|–––<br>~~DG~~|V<br>~~OO~~<br>~~QO~~|VGS= 0V, ID= 250µA<br>~~OO~~<br>~~QO~~|
|∆ΒVDSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~|–––<br>~~ee~~<br>~~Gs~~|0.23<br>~~ee~~<br>~~Gs~~|–––<br>~~ee~~|V/°C<br>~~ee~~<br>~~QO~~|Reference to 25°C, ID= 1mA<br>~~ee~~<br>~~QO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~<br>~~pe~~|–––<br>~~ee~~<br>~~Gs~~<br>~~pe~~<br>~~ee~~|85<br>~~ee~~<br>~~Gs~~<br>~~pe~~<br>~~ee~~|105<br>~~ee~~<br>~~pe~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~QO~~<br>~~pe~~<br>~~ee~~|VGS= 10V, ID= 11A<br>~~ee~~<br>~~QO~~<br>~~pe~~|
|VGS(th)|Gate Threshold Voltage<br>~~er~~|3.0<br>~~er~~<br>~~ee~~|–––<br>~~er~~<br>~~ee~~|4.9<br>~~er~~<br>~~ee~~|V<br>~~er~~<br>~~ee~~|VDS= VGS, ID= 100µA<br>~~er~~<br>~~eee~~|
|∆VGS(th)/∆TJ|Gate Threshold Voltage Coefficient<br>~~er~~<br>~~a~~|–––<br>~~er~~<br>~~ee~~<br>~~a~~<br>~~ee~~|-13<br>~~er~~<br>~~ee~~<br>~~a~~<br>~~ee~~|–––<br>~~er~~<br>~~ee~~<br>~~a~~<br>~~ee~~|mV/°C<br>~~er~~<br>~~ee~~<br>~~a~~<br>~~ee~~||
|IDSS|Drain-to-Source Leakage Current<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDS= 200V, VGS= 0V<br>~~ee~~<br>~~eee~~<br>~~PO~~|
|||–––<br>~~ee~~<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~||VDS= 200V, VGS= 0V, TJ= 125°C<br>~~ee~~<br>~~eee~~<br>~~PO~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~<br>~~a~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~|100<br> ~~ee~~<br>~~ee~~|nA<br>~~ee ~~<br>~~ee~~<br>~~DO~~|VGS= 20V<br> ~~eee~~<br>~~PO~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~<br>~~a~~|–––<br>~~ee~~<br>~~a~~<br>~~OD~~|–––<br>~~ee~~<br>~~OD~~|-100<br>~~ee~~<br>~~DO~~||VGS= -20V<br>~~ee~~<br>~~PO~~|
|gfs|Forward Transconductance<br>~~a~~|24<br>~~OD~~<br>~~ee~~|–––<br>~~OD~~<br>~~ee~~|–––<br>~~DO~~|S<br>~~DO~~|VDS= 50V, ID= 11A|
|Qg|Total Gate Charge<br>~~a~~<br>~~es~~|–––<br>~~OD~~<br>~~es~~<br>~~ee~~|18<br>~~OD ~~<br>~~es~~<br>~~ee~~|29<br> ~~DO~~<br>~~es~~|nC<br>~~DO~~|See Fig. 6 and 18<br>VGS= 10V<br>ID= 11A<br>VDS= 100V|
|Qgs1|Pre-Vth Gate-to-Source Charge<br>~~a~~|–––<br>~~ee ~~<br>~~a~~<br>~~ee~~|4.5<br> ~~ee~~<br>~~a~~<br>~~ee~~|–––<br>~~a~~|||
|Qgs2|Post-Vth Gate-to-Source Charge<br>~~es~~|–––<br>~~es~~<br>~~ee~~|1.4<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain Charge<br>~~es~~|–––<br>~~ee ~~<br>~~es~~|5.3<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qgodr|Gate Charge Overdrive<br>~~a~~|–––<br>~~a~~|6.8<br>~~a~~|–––<br>~~a~~|||
|Qsw|Switch Charge (Qgs2+ Qgd)<br>~~ee~~|–––<br>~~ee~~|6.7<br>~~ee~~|–––<br>~~ee~~|||
|RG(int)|Internal Gate Resistance<br>~~ee~~<br>~~pe~~<br>~~es~~|–––<br>~~ee~~<br>~~pe~~|3.2<br>~~ee~~<br>~~pe~~|–––<br>~~ee~~<br>~~pe~~|Ω<br>~~pe~~|~~pe~~<br>@|
|td(on)|Turn-On DelayTime<br>~~es~~|–––|7.8|–––|ns|ID= 11A<br>RG= 2.4Ω<br>VDD= 100V, VGS= 10V<br>@|
|tr|Rise Time<br>~~es~~<br>~~a~~|–––<br>~~a~~|12<br>~~a~~|–––<br>~~a~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|16<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~a~~|–––<br>~~a~~|6.3<br>~~a~~|–––<br>~~a~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~|1200<br>~~es~~|–––<br>~~es~~|pF<br>~~+H)~~|ƒ= 1.0MHz,          See Fig.5<br>VGS= 0V<br>VDS= 50V<br>~~PO~~|
|Coss|Output Capacitance<br>~~a~~|–––<br>~~a~~|91<br>~~a~~|–––<br>~~a~~|||
|Crss|Reverse Transfer Capacitance<br>~~a~~<br>~~ee~~|–––<br>~~a~~|20<br>~~a~~|–––<br>~~a~~|||
|Cosseff.|Effective Output Capacitance<br>~~ee~~<br>~~+H)~~|–––<br>~~+H)~~|110<br>~~+H)~~|–––<br>~~+H)~~||VGS= 0V, VDS= 0V to 160V<br>~~PO~~<br>~~«4~~|
|LD|Internal Drain Inductance<br>~~ee~~<br>~~+H)~~|–––<br>~~+H)~~|4.5<br>~~+H)~~|–––<br>~~+H)~~|nH<br>~~+H)~~|S<br>D<br>G<br>Between  lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~PO~~<br>~~«4~~|
|LS|Internal Source Inductance<br>~~+H)~~|–––<br>~~+H)~~|7.5<br>~~+H)~~|–––<br>~~+H)~~|||



@ R θ is measured at Ty of approximately 90°C. © Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive avalanche information. 

Repetitive rating;  pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.62mH, RG = 25 Ω , IAS = 11A. Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>8.0V<br>10 7.0V<br>6.0V<br>5.5V<br>BOTTOM 5.0V<br>1<br>A T | a<br>Serie eee<br>0.1<br>5.0V<br>≤ 60µs PULSE WIDTH<br>Tj = 25°C<br>0.01 airFE oiir_ nn oii<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical Output Characteristics 

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100<br>VDS = 25V<br>≤ 60µs PULSE WIDTH<br>SS<br>ee ee ee ee a A<br>10 TJ = 175°C<br>|a |=| TAS<br>es es | ey es ee<br>Ee osee<br>PAL<br>1 T = 25°C<br>J<br>me arl ae<br>ease<br>0.1 | | ff | ft |<br>2 3 4 5 6 7 8<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>rss   gd<br>Coss   = Cds + Cgd<br>1000 Ciss<br>Coss<br>NOT HTT<br>100 E E a |<br>10 PTTPE ELE Crss ELESAASEH)<br>1 10 100 1000<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs.Drain-to-Source Voltage 

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100<br>VGS<br>TOP           15V<br>12V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>10 5.5V<br>BOTTOM 5.0V<br>5.0V<br>ey sel<br>1 PAT<br>≤ 60µs PULSE WIDTH<br>Tj = 175°C<br>0.1 eeeBim neemlll<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>3.5<br>I = 11A<br>D<br>3.0 V GS = 10V<br>Ps} yet pay<br>T ee AAA<br>2.5<br>2.0 F CCAo<br>a e<br>1.5<br>a e<br>1.0<br>e |ee<br>0.5<br>e e<br>0.0 FE EELELELLELEL [|]<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>12.0<br>I = 11A<br>D<br>10.0 VDS= 160V<br>VDS= 100V<br>8.0 a VDS= 40V /4<br>6.0<br>4.0 a ne<br>/<br>2.00.0 JY} | of<br>0 5 10 15 20<br> QG,  Total Gate Charge (nC)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 6.** Typical Gate Charge vs.Gate-to-Source Voltage 

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100 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>TJ = 175°C 100<br>10 10<br>1<br>T = 25°C<br>J  100µsec<br>1 0.1<br>0.01 T c = 25°C DC 1msec<br>VGS = 0V Tj = 175°CSingle Pulse 10msec<br>0.1 | fi 0.001 Eaton<br>0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)<br>  Typical Source-Drain Diode Forward Voltage Fig 8.   Maximum Safe Operating Area<br>20 5.0<br>18<br>16<br>S TE MN<br>4.0<br>14<br>12 ID = 100µAD = 100µA= 100µA<br>P ASSE PTT ET<br>10 P ot | IN’ | 3.0 IN<br>8<br>P t fF | UK] \<br>6<br>a \\<br>2.0<br>4 P ot tf tf tT KY S<br>2<br>0 p | tT | hmT UN 1.0<br>25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200<br> TJ , Junction Temperature (°C) TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID,  Drain Current (A)<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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5.0<br>MN<br>4.0<br>ID = 100µAD = 100µA= 100µA<br>PTT ET<br>3.0 IN<br>\<br>\\<br>2.0<br>S<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175 200<br>TJ , Temperature ( °C )<br>VGS(th), Gate Threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 9.** Maximum Drain Current vs. Junction Temperature 

**Fig 10.** Threshold Voltage vs. Temperature 

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10<br>1<br>D = 0.50<br>0.1 0.200.050.10 τ J τ J R1 R1 R2 R2 R3 R3 R4R4 τ C τ Ri (°C/W)   0.0283     0.000007  τ i (sec)<br>0.02 τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ 4 τ 4 0.3659     0.0001400.7264     0.001376<br>0.01 Ci=  τ i / Ri 0.3093     0.007391<br>SINGLE PULSE Ci i / Ri<br>0.01 ( THERMAL RESPONSE )<br>Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 ENE PECIFIC Tn l<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100<br>t1 , Rectangular Pulse Duration (sec)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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300 400<br>275 ID = 11A ID<br>TOP         1.6A<br>250 2.4A<br>Poee! )~=6ONDT<br>300 BOTTOM 11A<br>225<br>200 HH TJ = 125 ° C JN<br>175 CREEEE SEE 200 N OE<br>150<br>125<br>PT TT TT ET Ty P N<br>100<br>100 T J  = 25°C<br>HEHE] E SAS<br>75<br>—- A R il<br>50 0<br>5 PSSEEsHEH] 6 7 8 9 10 11 12 13 14 15 16 = 25 L 50 ISS 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>)  Ω<br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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VGS, Gate -to -Source Voltage  (V)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12.** On-Resistance vs. Gate Voltage 

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1000<br>100 Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>10 0. 01 assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>0.05<br>1 0.10<br>0.1<br>0.01<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current Vs.Pulsewidth<br>100 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>(For further info, see AN-1005 at www.irf.com)<br>TOP          Single Pulse<br>1. Avalanche failures assumption:<br>BOTTOM   1.0% Duty Cycle<br>  Purely a thermal phenomenon and failure occurs at a<br>80 ID = 11A     temperature far in excess of Tjmax. This is validated for<br>N t     every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax isjmax is is<br>60   not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>S ST<br>  Figures 17a, 17b.<br>4. PD (ave) = Average power dissipation per single<br>40     avalanche pulse.<br>T NNUETT 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>T IATT 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>    Tjmax (assumed as 25°C in Figure 14, 15).<br>0 C ATS   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)thJC(D, tav) = Transient thermal resistance, see figure 11)(D, tav) = Transient thermal resistance, see figure 11)av) = Transient thermal resistance, see figure 11)) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C) PD (ave) = 1/2 ( 1.3·BV·Iav) =av) =) =  = 1/2 ( 1.3·BV·Iav) =av) =) = T/ ZthJCthJC<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


2. Safe operation in Avalanche is allowed as long asTjmax isjmax is is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 

- ZthJC(D, tav) = Transient thermal resistance, see figure 11)thJC(D, tav) = Transient thermal resistance, see figure 11)(D, tav) = Transient thermal resistance, see figure 11)av) = Transient thermal resistance, see figure 11)) = Transient thermal resistance, see figure 11) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =av) =) = T/ ZthJCthJC** 

**Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>20VVGS<br>ar i tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 16a.** Unclamped Inductive Test Circuit 

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**----- Start of picture text -----**<br>
LD<br>VDS<br>ei<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 17a.   Switching Time Test Circuit<br>L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 17a.** Switching Time Test Circuit 

**Fig 18a.** Gate Charge Test Circuit 

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V(BR)DSS<br><~<— tp —><br>/<br>/<br>/<br>IAS<br>Fig 16b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90% ——<br>10%<br>V<br>GS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 16b.** Unclamped Inductive Waveforms 

**Fig 17b.** Switching Time Waveforms 

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Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 18b** Gate Charge Waveform 

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**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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Dimensions are shown in millimeters (inches) 

**==> picture [393 x 420] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>ea |<br>FEED DIRECTION 1.85 (.073) 1 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>ee e666 in 15.42 (.609) _ |<br>23.90 (.941)<br>15.22 (.601)<br>TRL ks<br>10.90 (.429) - | 1.75 (.069)1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>0000 CT 16.10 (.634) } 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) TT<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>NOTES : OO | JL 30.40 (1.197)      MAX.<br>1.   COMFORMS TO EIA-418.2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) IE 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 05/09 

www.irf.com 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFS4020TRLPBF/power-mosfet-n-channel-200-v-18-a-0105-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs4020trlpbf/mosfet-n-ch-200v-18a-to-263/dp/2839495)
---

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