# Power MOSFET, N Channel, 150 V, 33 A, 0.056 ohm, TO-263 (D2PAK), Surface Mount
**URL**: https://novapart.co/products/IRFS33N15DTRLP/power-mosfet-n-channel-150-v-33-a-0056-ohm-to-263
**SKU**: IRFS33N15DTRLP
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8790
**Stock**: 10+
## Specifications
| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 170W |
| Drain Source On State Resistance | 0.056ohm |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2839494RL/)
PD- 93903
## **SMPS MOSFET**
IRFB33N15D IRFS33N15D IRFSL33N15D HEXFET[®] Power MOSFET
## **Applications**
High frequency DC-DC converters
|**VDSS**|**RDS(on)max**|**ID**|
|---|---|---|
|**150V**|**0.056**Ω|**33A**|
## **Benefits**
Low Gate-to-Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
> | Fully Characterized Avalanche Voltage and Current
TO-220AB D[2] Pak TO-262 IRFB33N15D IRFS33N15D IRFSL33N15D
## **Absolute Maximum Ratings**
—_’N0."7-0.'.-.--- **Parameter** ~~TI~~ **Max. Units** ~~a~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 33 ~~—~~ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 24 A ~~a~~ IDM Pulsed Drain Current ~~ee~~ 130 ~~es~~ PD @TA = 25°C Power Dissipation 3.8 W ~~see~~ PD @TC = 25°C Power Dissipation 170 Linear Derating Factor 1.1 W/°C ~~i~~ VGS Gate-to-Source Voltage ± 30 V ~~oo~~ dv/dt Peak Diode Recovery dv/dt 4.4 V/ns TJ Operating Junction and -55 to + 175 -——— TSTG Storage Temperature Range °C ~~oo~~ Soldering Temperature, for 10 seconds 300 (1.6mm from case ) a ~~=~~ Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m) ~~eee~~
## **Typical SMPS Topologies**
Telecom 48V input Active Clamp Forward Converter
Notes through are on page 11 www.irf.com
1
6/29/00
## IRFB/IRFS/IRFSL33N15D
## **Static @ TJ = 25°C (unless otherwise specified)**
**==> picture [433 x 553] intentionally omitted <==**
**----- Start of picture text -----**
|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|es|Parameter|ee|Min.|T|ee|yp.|Max.|Units|Conditions|
|V(BR)DSS|es|Drain-to-Source Breakdown Voltage|150|es|es|–––|–––|V|VGS = 0V, ID = 250µA|
|∆V(BR)DSS/∆TJ|ed|Breakdown Voltage Temp. Coefficient|––– 0.18 ––– V/°C Reference to 25°C, ID = 1mA|©|
|RDS(on)|Static Drain-to-Source On-Resistance|–––|–––|0.056|Ω|VGS = 10V, ID = 20A|
|ee|es|ee|@|
|VGS(th)|ed|Gate Threshold Voltage|3.0|–––|5.5|V|VDS = VGS, ID = 250µA|
|IDSS|Drain-to-Source Leakage Current|––––––|––––––|25025|µA|VVDSDS = 150V, V = 120V, VGSGS = 0V = 0V, TJ = 150°C|
|IGSS|ee|Gate-to-Source Forward LeakageGate-to-Source Reverse Leakage|||||––––––|eee||––––––|||-100100|nA|VVGSGS = 30V = -30V|
|Dynamic @ TJ = 25°C (unless otherwise specified)|
|es|Parameter|ee|Min.|T|ee|yp.|Max.|Units|Conditions|
|gfs|ee|Forward Transconductance|es|14|–––|es|–––|S|VDS = 50V, ID = 20A|
|Qg|Total Gate Charge|–––|60 90 ID = 20A|
|Qgs|ee|Gate-to-Source Charge|–––|17|26|nC|VDS = 120V|
|Qgd|Gate-to-Drain ("Miller") Charge|–––|27|41|VGS = 10V,|
|ee|ee|
|td(on)|Turn-On Delay Time|–––|13|–––|VDD = 75V|
|Rs|tr|a|Rise Time|ee|–––|38|–––|ns|ID = 20A|Xe)|
|a|td(off)|es|Turn-Off Delay Time|–––|23|–––|RG = 3.6Ω|
|tf|Fall Time|–––|21|–––|VGS = 10VΩ|
|ee|Ciss|Input Capacitance|–––|ee|2020|ee|–––|VGS = 0V|°|
|a|Coss|Output Capacitance|–––|400|–––|VDS = 25V|
|Crss|Reverse Transfer Capacitance|–––|91|–––|pF|ƒ = 1.0MHz|
|es|)|
|a|Coss|es|Output Capacitance|–––|2440|–––|VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz|
|Coss|Output Capacitance|–––|180|–––|VGS = 0V, VDS = 120V, ƒ = 1.0MHz|
|Rs|
|Coss eff.|Effective Output Capacitance|–––|320|–––|VGS = 0V, VDS = 0V to 120V|
|a|es ee|ee|®|
|Avalanche Characteristics|
|Parameter|Typ.|Max.|Units|
|ese|s|
|a|EAS|e|Single Pulse Avalanche Energy|X|–––|330|mJ|
|IAR|Avalanche Current|–––|20|A|
|es|©|
|ee|EAR|Repetitive Avalanche Energy|©©|–––|17|mJ|
|Thermal Resistance|
|Parameter|Typ.|Max.|Units|
|Pees|
|RθJC|Junction-to-Case|–––|0.90|
|es|
|RθCS|Case-to-Sink, Flat, Greased Surface|0.50|–––|°C/W|
|es|
|a|RθJA|©|Junction-to-Ambient|–––|62|
|RθJA|Junction-to-Ambient|–––|40|
|es|a|>|
|Diode Characteristics|
|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|33|MOSFET symbol|D|
|(Body Diode)|A|showing the|
|ISM|Pulsed Source Current|–––|–––|130|integral reverse|G|
|ee|(Body Diode)|p-n junction diode.|i|S|
|$$|EH|
|VSD|Diode Forward Voltage|–––|–––|1.3|V|TJ = 25°C, IS = 20A, VGS = 0V|
|a|trr|es|Reverse Recovery Time|es|–––|150|–––|ns|TJ = 25°C, IF = 20A|°|
|Qrr|Reverse RecoveryCharge|–––|920|–––|nC|di/dt = 100A/µs|
|Sn|ton|PT|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by L|®|S+LD)|
|2|www.irf.com|
**----- End of picture text -----**
www.irf.com
## IRFB/IRFS/IRFSL33N15D
**==> picture [202 x 195] intentionally omitted <==**
**----- Start of picture text -----**
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
100 5.0V
BOTTOM 4.5V
petit
10
apa
1 PALL ITT
SSS 4.5V SH
20µs PULSE WIDTH
T = 25J °C
0.1 IE
0.1 1 10 100
V , Drain-to-Source Voltage (V)DS
D
I , Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 1.** Typical Output Characteristics
**==> picture [197 x 194] intentionally omitted <==**
**----- Start of picture text -----**
1000 SS SS S555 555555 ==
RRR
Pit | tT eet pe pe pt
100
T = 175 CJ °
SNES[|] Patt2 ceeeeeeaeerte per tt
10
TMA I TTT ttt
Soc T = 25 CJ cccccccococe °
1
PIAA tt tt tt
B RR V = 50VDS
0.1 PEREEEEFCCC 20µs PULSE WIDTH
4 5 6 7 8 9 10 11 12
V , Gate-to-Source Voltage (V)GS
D
I , Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 3.** Typical Transfer Characteristics
**==> picture [200 x 193] intentionally omitted <==**
**----- Start of picture text -----**
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TO
100
“iim.
10 Faget
4.5V
—et
20µs PULSE WIDTH
T = 175J °C
1 AA
0.1 1 10 100
V , Drain-to-Source Voltage (V)DS
D
I , Drain-to-Source Current (A)
**----- End of picture text -----**
**Fig 2.** Typical Output Characteristics
**==> picture [215 x 198] intentionally omitted <==**
**----- Start of picture text -----**
3.0
ID = 33A
TT [IIILLLL,
T T
2.5 I
2.0
FCCC CEAL Z|
1.5
yep Pa
{tA
1.0 See
0.5
ceases
VGS = 10V
0.0 FT EEEEL e h
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T , Junction TemperatureJ ( C)°
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
**----- End of picture text -----**
**Fig 4.** Normalized On-Resistance Vs. Temperature
www.irf.com
3
## IRFB/IRFS/IRFSL33N15D
**==> picture [436 x 200] intentionally omitted <==**
**----- Start of picture text -----**
20
100000 VGS = 0V, f = 1 MHZ ID = 20A
Ciss = Cgs + Cgd, Cds SHORTED VDS = 120V
Crss = Cgd 16 VDS = 75V
10000 Coss = Cds + Cgd VDS = 30V
a ii Soa Sean
ee Ciss 12 l lA
1000 et ei EE Yr
Coss 8
PT TTT oe | /,
100
S U I Crss NG
4
S e TI MM A
FOR TEST CIRCUIT
10 PEATE etryCE ae mecetttei vauullZnnna SEE FIGURE 13
0
1 10 100 1000 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V) Q , Total Gate Charge (nC)G
GS
V , Gate-to-Source Voltage (V)
C, Capacitance(pF)
**----- End of picture text -----**
## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage
**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage
**==> picture [428 x 191] intentionally omitted <==**
**----- Start of picture text -----**
1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
=== == ° ae 100 p=apronte-brtt iig@| 10us |
T = 175 CJ
10
SREP 48/4eeeee er asi eames mel
100us
4 HCA T = 25 CJ ° a 10 PIEI N I T AT
1 1ms
T TCJ = 25 C= 175 C° ° 10ms
0.1 PER SE V = 0 V GS 1 H Single Pulse ATH ttt
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
V ,Source-to-Drain Voltage (V)SD V , Drain-to-Source Voltage (V)DS
I , Drain Current (A) D
I , Reverse Drain Current (A)SD
**----- End of picture text -----**
**Fig 7.** Typical Source-Drain Diode Forward Voltage
**Fig 8.** Maximum Safe Operating Area
www.irf.com
4
## IRFB/IRFS/IRFSL33N15D
**==> picture [203 x 196] intentionally omitted <==**
**----- Start of picture text -----**
35 Rt | | dT cE TE TT |
30 PpNEETE TT ET TT
aaNe eee
25
pit | Ne
Pt] tT TdT dT TT TT
20 PT tT EE TE TALE TET
EEN
15 See ee eeeNEe
Pt te EE EE TE EE
10 PittPt te tTETtT eTEE rTTT rT rTENETK
5 PTPT te| |ET| dEdT dTETTdTTT| tTTN
0 Pi tT tT T_T T_T tT tll
25 50 75 100 125 150 175
T , Case TemperatureC ( C)°
I , Drain Current (A)D
**----- End of picture text -----**
**Fig 9.** Maximum Drain Current Vs. Case Temperature
**==> picture [187 x 232] intentionally omitted <==**
**----- Start of picture text -----**
RD
VDS
:
VGS
D.U.T.
RG
+
- [V] DD
10V
F
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
=
Fig 10a. Switching Time Test Circuit
VDS
90% | |
|
|
|
10%
VGS |le ole >|| «ee|
td(on) tr td(off) tf
**----- End of picture text -----**
**Fig 10b.** Switching Time Waveforms
**==> picture [429 x 197] intentionally omitted <==**
**----- Start of picture text -----**
1 aeee ee
eea ee ee ee eeeeee eeeee eeee eeee eee
D = 0.50
P r emf PO Pf
a ee ee eee
B E
A 0.20 LE EET
0.1 pe 0.10 call Tfae ee
0.05 PDM
ea 559, in ee ee ee el eee
0.02 — SINGLE PULSE Oe t 1
0.01 eat (THERMAL RESPONSE) Oe ee eel t 2
Notes:
1. Duty factor D = t / t1 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t , Rectangular Pulse Duration (sec)1
thJC
(Z )
Thermal Response
**----- End of picture text -----**
**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
## IRFB/IRFS/IRFSL33N15D
**==> picture [399 x 203] intentionally omitted <==**
**----- Start of picture text -----**
800
1 5V ID
TOP 8.1A
14A
V DS L DRIVER 600 pNeen oo BOTTOM 20A
N e
R G D.U.T +
- [V][D D]
IA S A 400
vo 20V GaNEReeeeeee
tp 0.01Ω
* WNNt
Unclamped Inductive Test Circuit
200
PSSANNJ
_— tp V (BR)DSS (BR)DSS ASSpt |PSS
0
25 50 75 100 125 150 175
/ °
Starting T , Junction TemperatureJ ( C)
AS
E , Single Pulse Avalanche Energy (mJ)
**----- End of picture text -----**
**Fig 12a.** Unclamped Inductive Test Circuit
**==> picture [120 x 92] intentionally omitted <==**
**----- Start of picture text -----**
_— tp V (BR)DSS (BR)DSS
/
;
/
/ [\]
I AS
**----- End of picture text -----**
**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current
**Fig 12b.** Unclamped Inductive Waveforms
**==> picture [148 x 114] intentionally omitted <==**
**----- Start of picture text -----**
— QG
10 V ==
QGS QGD
VG
an + _
Charge 7
**----- End of picture text -----**
**Fig 13a.** Basic Gate Charge Waveform
**==> picture [130 x 126] intentionally omitted <==**
**----- Start of picture text -----**
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
3. .3µF
+
D.U.T. -VDS
VGS
—_@
3mA
a |
IG ID
Current Sampling Resistors
**----- End of picture text -----**
**Fig 13b.** Gate Charge Test Circuit
www.irf.com
6
## IRFB/IRFS/IRFSL33N15D
## **Peak Diode Recovery dv/dt Test Circuit**
**==> picture [286 x 432] intentionally omitted <==**
**----- Start of picture text -----**
D.U.T + Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
|(faa)| - Current Transformer
+
ae
- - +
a
00)
RG • dv/dt controlled by RG +
1 ( nd • • Driver same type as D.U.T.ISD controlled by Duty Factor "D" - VDD
• D.U.T. - Device Under Test
O) Driver Gate Drive
P.W.
Period D =
P.W. Period
-——— + | _
VGS=10V *
a \
@ D.U.T. ISD Waveform
Reverse
Recovery Body Diode Forward
Current Current di/dt JN
@ D.U.T. VDS Waveform Diode Recovery
dv/dt
VDD
ma
Re-Applied ai
Voltage Body Diode Forward Drop
® Inductor Curent
a
Ripple ≤ 5% ISD
**----- End of picture text -----**
- VGS = 5V for Logic Level Devices
**Fig 14.** For N-Channel HEXFET[®] Power MOSFETs
www.irf.com
7
## IRFB/IRFS/IRFSL33N15D
**==> picture [399 x 272] intentionally omitted <==**
**----- Start of picture text -----**
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415 ) 3.78 (.149) - B -
2.87 (.1 13) 10.29 (.405 ) 3.54 (.139) 4 .69 (.18 5)
2.62 (.1 03) - A - 4 .20 (.16 5) 1.3 2 (.05 2)
1.2 2 (.04 8)
6.4 7 (.2 55)
4 6.1 0 (.2 40)
15 .24 (.60 0)
14 .84 (.58 4)
1.15 (.04 5) LE A D A S S IG N M E N TS
M IN 1 - G A T E
1 2 3 2 - D R A IN
3 - S O U R C E
4 - D R A IN
1 4.09 (.5 55)
1 3.47 (.5 30) 4.06 (.160)
3.55 (.140)
a |
3 X is [1 .40 (.05 5)] 3X 0.93 (.0 37)0.69 (.0 27) ania 3 X [0.55 (.02 2)] 0.46 (.01 8)
1 .15 (.04 5) 0.3 6 (.014 ) M B A M
2.9 2 (.115 )
[
2.6 4 (.104 )
2 .54 (.10 0)
2X
**----- End of picture text -----**
**==> picture [24 x 6] intentionally omitted <==**
**----- Start of picture text -----**
N O TE S :
**----- End of picture text -----**
- 1 D IME N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982. 3 O U TL IN E C O N F O R MS TO JE D E C O U T LIN E T O -2 20A B .
- 2 C O N TR O LLIN G D IM E N S IO N : IN C H 4 H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
## TO-220AB Part Marking Information
E XAM PL E : TH IS IS A N IR F 1010 W ITH AS SE M BLY LO T C O D E 9B 1M INTE R N AT ION AL PA R T N U M BE R 0 R E C TIFIE R IR F 1010 | LO G O 9246 9B 1M D ATE C O D E A S SE MB LY (YYW W ) LOT C O D E YY = YEA R W W = W EE K #I
www.irf.com
8
## IRFB/IRFS/IRFSL33N15D
## D[2] Pak Package Outline
**==> picture [408 x 245] intentionally omitted <==**
**----- Start of picture text -----**
10.54 (.415) - B - 10.16 (.400)
10.29 (.405) 4.69 (.185) REF.
1.40 (.055) M AX. - A - 4.20 (.165) 1.32 (.052)1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070) 15.49 (.610) 2.79 (.110)
1.27 (.050) 1 3 14.73 (.580) 2.29 (.090)
5.28 (.208) 2.61 (.103)
4.78 (.188) 2.32 (.091)
imttle1 8.89 (.350)
3X [1.40 (.055)] 1.39 (.055) REF.
1.14 (.045) 3X [0.93 (.037)] 0.69 (.027) 0.55 (.022)0.46 (.018) 1.14 (.045)
5.08 (.200) 0.25 (.010) M B A M M INIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
LEAD ASSIGNMENTS 8.89 (.350)
1 DIM ENSIONS AFTER SOLDER DIP. 1 - GATE
2 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982. 2 - DRAIN acc 17.78 (.700)
3 - SOURCE
3 CONTROLLING DIM ENSION : INCH.
4 HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
nie
2.54 (.100)
2.08 (.082) 2X tet 2X
**----- End of picture text -----**
**==> picture [24 x 6] intentionally omitted <==**
**----- Start of picture text -----**
NO TES:
**----- End of picture text -----**
- 1 DIM ENSIONS AFTER SOLDER DIP.
- 2 DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
- 3 CONTROLLING DIM ENSION : INCH.
- 4 HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
## D[2] Pak Part Marking Information
INTERNATIONAL PART NUM BER RECTIFIER F530S LOGO 9246 DATE CODE 9B 1M (YYW W ) ASSEM BLY YY = YEAR LOT CODE W W = W EEK
www.irf.com
9
## IRFB/IRFS/IRFSL33N15D
## TO-262 Package Outline
## TO-262 Part Marking Information
www.irf.com
10
## IRFB/IRFS/IRFSL33N15D
## D[2] Pak Tape & Reel Information
**==> picture [13 x 5] intentionally omitted <==**
**----- Start of picture text -----**
TR R
**----- End of picture text -----**
## **Notes:**
**==> picture [272 x 286] intentionally omitted <==**
**----- Start of picture text -----**
1 .60 (.0 63)
1 .50 (.0 59)
1.60 (.063)
4.10 (.161)3.90 (.153) 1.50 (.059) 0.368 (.0145)
0.342 (.0135)
FEE D D IREC TIO N 1 .85 (.0 73) 11.60 (.457)
1 .65 (.0 65) 11.40 (.449) 15.42 (.609) 24.30 (.957)
15.22 (.601) 23.90 (.941)
Bde TR L N) 5
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)
FEED D IRE CTION
13.50 (.532) 27.40 (1.079)
12.80 (.504) 23.90 (.941) or
4
330.00 60.00 (2.362)
(14.173) M IN.
M AX.
30.40 (1.197)
NO TES : M AX.
1. CO M FORM S TO EIA-418.2. CO NTROLLING DIM ENSIO N: M ILLIM ETER. 26.40 (1.039)24.40 (.961) TE 4
3. DIM ENSION M EASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ O UTER EDGE. 3
**----- End of picture text -----**
(0) Repetitive rating; pulse width limited by ® Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature.
@ Starting TJ = 25°C, L = 1.7mH © Coss eff. is a fixed capacitance that gives the same charging time RG = 25Ω, IAS = 20A. as Coss while VDS is rising from 0 to 80% VDSS 6) ISD ≤ 20A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS, © This is only applied to TO-220AB package TJ ≤ 175°C
This is applied to D[2] Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 **IR EUROPEAN REGIONAL CENTER:** 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 **IR CANADA:** 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 **IR GERMANY:** Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 **IR ITALY:** Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 **IR JAPAN:** K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 **IR SOUTHEAST ASIA:** 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 **IR TAIWAN:** 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00
www.irf.com
11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
## Links
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---
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