# Power MOSFET, N Channel, 75 V, 170 A, 4500 µohm, TO-263AB, Surface Mount

![Product image](https://novapart.co/image/farnell:2580024/)

**URL**: https://novapart.co/products/IRFS3207TRLPBF/power-mosfet-n-channel-75-v-170-a-4500-ohm-to
**SKU**: IRFS3207TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.9920
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0036ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 3 - 168 hours |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 300W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-263AB |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 170A |
| Drain Source On State Resistance | 4500µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2580024/)

## PD - 95708D IRFB3207PbF IRFS3207PbF IRFSL3207PbF 

## **Applications** 

High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits 

## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

HEXFET Power MOSFET 

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D<br>VDSS 75V<br>RDS(on)   typ. 3.6m<br>G               max. 4.5m Q<br>S ID 170A<br>Po<br>**----- End of picture text -----**<br>


Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

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DS DS DS<br>G G G<br>TO-220AB D [2] Pak TO-262<br>IRFB3207PbF IRFS3207PbF IRFSL3207PbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|**Symbol**<br>~~———e~~|**Parameter**<br>~~———e~~|**Max.**<br>~~RK~~<br>~~GR~~|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~———e~~|Continuous Drain Current, VGS@ 10V<br>~~nn~~<br>~~———e~~|170<br>~~nn~~<br>~~RK~~<br>~~GR~~|A|
|ID@ TC= 100°C<br>~~———e~~|Continuous Drain Current, VGS@ 10V<br>~~en~~<br>~~———e~~|120<br>~~RK~~<br>~~en~~<br>~~GR~~||
|IDM<br>~~———e~~|Pulsed Drain Current<br>~~———e~~|720<br>~~GR~~||
|PD@TC= 25°C<br>~~———e~~|Maximum Power Dissipation<br>~~———e~~<br>~~Pee~~|300<br>~~GR~~<br>~~Pee~~<br>~~(ne~~|W<br>~~Pee~~|
||Linear DeratingFactor<br>~~ny~~|2.0<br>~~ny~~<br>~~(ne~~<br>~~Ge~~|W/°C<br>~~ny~~|
|VGS|Gate-to-Source Voltage<br>~~ry~~|± 20<br>~~(ne~~<br>~~ry~~<br>~~Ge~~|V<br>~~ry~~|
|dV/dt|Peak Diode Recovery<br>~~ry~~|5.8<br>~~ry~~<br>~~Ge~~|V/ns<br>~~ry~~|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||Soldering Temperature, for 10 seconds<br>(1.6mm from case)<br>~~eee~~|300<br>~~nC~~||
||Mountingtorque,6-32 or M3 screw<br>~~eee~~|10lb in(1.1N m)<br>~~nC~~||



## **Thermal Resistance** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~<br>~~nn~~|**Typ.**<br>~~a~~<br>~~GR~~|**Max.**<br>~~a~~|**Units**<br>~~a~~|
|---|---|---|---|---|
|RθJC<br>~~a~~|Junction-to-Case<br>~~a~~<br>~~es~~<br>~~nn~~|–––<br>~~a~~<br>~~es~~<br>~~GR~~|0.50<br>~~a~~<br>~~es~~|°C/W<br>~~a~~|
|RθCS<br>~~a~~<br>~~a~~|Case-to-Sink,Flat Greased Surface,TO-220<br>~~a~~<br>~~nn~~<br>~~a~~|0.50<br>~~a~~<br>~~GR~~<br>~~GR~~|–––<br>~~a~~||
|RθJA<br>~~a~~|Junction-to-Ambient,TO-220<br>~~nn~~<br>~~a~~<br>~~Se)~~|–––<br>~~GR~~<br>~~Se)~~<br>~~GR~~|62<br>~~Se)~~||
|RθJA<br>~~a~~|Junction-to-Ambient (PCB Mount) ,D2Pak<br>~~a~~<br>~~Pew~~|–––<br>~~GR~~<br>~~Pew~~|40<br>~~Pew~~||



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03/06/06 

**Static @ TJ = 25°C (unless otherwise specified)** 

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|||||||||||
|---|---|---|---|---|---|---|---|---|---|
|Symbol|Parameter|Min.|Typ.|Max.|Units|Conditions|
|V(BR)DSS|GO|Drain-to-Source Breakdown Voltage|75|–––|QO|–––|V|VGS = 0V, ID = 250µA|
|∆V(BR)DSS/∆TJ|GO|Breakdown Voltage Temp. Coefficient|–––|0.069|QO|–––|V/°C|Reference to 25°C, ID = 1mA|
|RDS(on)|QO|Static Drain-to-Source On-Resistance|–––|3.6|QO|4.5|mΩ|(©|VGS = 10V, ID = 75A|
|VGS(th)|GO|Gate Threshold Voltage|2.0|–––|QO|4.0|V|VDS = VGS, ID = 250µA|
|IDSS|Drain-to-Source Leakage Current|–––|–––|20|µA|VDS = 75V, VGS = 0V|
|||–––|–––|250|VDS = 75V, VGS = 0V, TJ = 125°C|
|||
|IGSS|Gate-to-Source Forward Leakage|–––|–––|200|nA|VGS = 20V|
|ee|Gate-to-Source Reverse Leakage|–––|–––|-200|VGS = -20V|
||||||
|RG|DG|Gate Input Resistance|–––|GOO|1.2|OO|–––|Ω|f = 1MHz, open drain|
|Dynamic @ TJ = 25°C (unless otherwise specified)|
|Symbol|Parameter|Min.|Typ.|Max.|Units|Conditions|
|gfs|pe|Forward Transconductance|150|–––|–––|S|VDS = 50V, ID = 75A|
|Qg|a|Total Gate Charge|–––|180|260|nC|ID = 75A|
|Qgs|a|Gate-to-Source Charge|–––|48|–––|VDS = 60V|
|Qgd|a|Gate-to-Drain ("Miller") Charge|–––|68|–––|VGS = 10V|®|
|td(on)|a|Turn-On Delay Time|–––|29|–––|ns|VDD = 48V|
|tr|a|Rise Time|–––|120|–––|ID = 75A|
|td(off)|a|Turn-Off Delay Time|–––|68|–––|RG = 2.6Ω|
|tf|a|Fall Time|–––|74|–––|VGS = 10V|®|
|Ciss|a|Input Capacitance|–––|7600|–––|pF|VGS = 0V|
|Coss|a|Output Capacitance|–––|710|–––|VDS = 50V|
|Crss|a|Reverse Transfer Capacitance|–––|390|–––|ƒ = 1.0MHz|
|Coss eff. (ER)|a)|Effective Output Capacitance (Energy Related)|–––|920|–––|VGS = 0V, VDS = 0V to 60V|, See Fig.11|
|Coss eff. (TR)|Effective Output Capacitance (Time Related)|–––|1010|–––|VGS = 0V, VDS = 0V to 60V|, See Fig. 5|
|ee|@|
|Diode Characteristics|
|Symbol|Parameter|Min.|Typ.|Max.|Units|Conditions|
|IS|Continuous Source Current|–––|–––|170|A|MOSFET symbol|D|
|(Body Diode)|showing  the|
|ISM|Pulsed Source Current|–––|–––|720|integral reverse|G|
|4p|(Body Diode)|p-n junction diode.|S|
|VSD|owpf|Diode Forward Voltage|ST|–––|–––|1.3|V|TJ = 25°C, IS = 75A, VGS = 0V|
|trr|Reverse Recovery Time|–––|42|63|ns|TJ = 25°C|VR = 64V,|
|ee|–––|49|74|TJ = 125°C|IF = 75A|
|Qrr|Reverse Recovery Charge|–––|eee||65|98|nC|TJ = 25°C|ee|di/dt = 100A/µs|
|–––|92|140|TJ = 125°C|;|
|IRRM|ee|Reverse Recovery Current|–––|[eee]||||2.6|–––|A|TJ = 25°C|
|a|||
|ton|GO|Forward Turn-On Time|Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)|

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> Notes: ~~®©~~ Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time temperature. Package limitation current is 75A. as Coss while VDS is rising from 0 to 80% VDSS. 

- @ Repetitive rating;  pulse width limited by max. junction @ temperature. 

Coss eff. (ER) is a fixed capacitance that gives the same energy as 

Coss while VDS is rising from 0 to 80% VDSS. 

Limited by TJmax, starting TJ = 25°C, L = 0.33mH 

When mounted on 1" square PCB (FR-4 or G-10 Material).  For recommended footprint and soldering techniques refer to application note #AN-994. Rθ is measured at TJ approximately 90°C. 

- RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use above this value. 

ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 400µs; duty cycle ≤ 2%. 

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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>5.0V 5.0V<br>100 4.8V 4.8V<br>BOTTOM 4.5V see ealll BOTTOM 4.5V po||<br>100<br>ZF Weal aD/cameellll<br>10 Ce eT | me 4.5V HImetasAil<br>4.5V<br>≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>S | eT Yl<br>1 10<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000.0 2.5<br>ID = 75A<br>V = 10V<br>T = 175°C GS<br>J<br>7 2.0 “T HAT<br>100.0<br>> 4a TJ = 25°C PS<br>a ——— PT TTT PTET AT<br>1.5<br>(fy yp SEE eee<br>10.0 oe PETE<br>PPP 1.0 LL PLL<br>V = 50V<br>DS<br>≤ 60µs PULSE WIDTH<br>1.0 fro itp<br>{|_| 0.5 PtTL ELeEEL [ELLE]<br>4.0 5.0 6.0 7.0 8.0 9.0<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>VGS, Gate-to-Source Voltage (V)<br>TJ , Junction Temperature (°C)<br>Fig 4.   Normalized On-Resistance vs. Temperature<br>Fig 3.   Typical Transfer Characteristics<br>12000 20<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  Cds SHORTED ID= 75A VDS= 60V<br>10000 C rss    = C gd  16 VDS= 38V<br>TT] Coss  = Cds + Cgd aw<br>8000 Ciss<br>12<br>6000<br>| ill aap en<br>8<br>4000<br>a al vanaene<br>4<br>2000<br>Coss<br>lt Crss A+<br>Soo 0<br>0<br>0 40 80 120 160 200 240 280<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>)(Α<br>ID, Drain-to-Source Current<br>C, Capacitance (pF)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000.0<br>TJ = 175°C<br>100.0<br>10.0<br>| fy a<br>T = 25°C<br>J<br>1.0<br>V = 0V<br>GS<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>VSD, Source-to-Drain Voltage (V)<br>Fig 7.   Typical Source-Drain Diode<br>Forward Voltage<br>200<br>Limited By Package<br>150<br>100<br>ALL<br>pr<br>50<br>C CECE<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>Fig 9.   Maximum Drain Current vs.<br>Case Temperature<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>20 at 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)<br>ISD, Reverse Drain Current (A)<br>Energy (µJ)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 11.** Typical COSS Stored Energy 

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10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100 100µsec<br>10<br>Se ee eeee<br>1 1msec<br>Tc = 25°C<br>Tj = 175°C 10msec<br>Single Pulse DC<br>0.1<br>1 10 100 1000<br>VDS  , Drain-toSource Voltage (V)<br>Fig 8.   Maximum Safe Operating Area<br>100<br>90<br>tana<br>80 peaae<br>70 PLETE<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>Fig 10.   Drain-to-Source Breakdown Voltage<br>4000<br>                 I D<br>TOP          12A<br>                16A<br>3000 BOTTOM   75A<br>2000<br>NN<br>1000 TSS a<br>0<br>25 <i 50 75 Wa 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>ID,  Drain-to-Source Current (A)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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1<br>D = 0.50<br>0.1<br>0.20<br>0.10<br>0.05 Se ee | R1 R1 R2 R2 Ri (°C/W)    rr  τi (sec) |<br>0.01 0.02 0.01 τ J τJτ1 τ1 τ2τ2 τ Cτ 0.2151     0.0011750.2350     0.017994<br>Ci= τi/Ri<br>Ci i/Ri<br>0.001 ert<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc<br>0.0001 Pt ii<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming ∆Tj = 150°C and<br>Duty Cycle = Single Pulse 0.01 Tstart =25°C (Single Pulse)<br>EZR ARR<br>0.05<br>10 o r TIPS Pps oo<br>0.10<br>Pe ZZ RRS<br>A 0 ( 12:|<br>Allowed avalanche Current vs avalanche<br>1 pulsewidth, tav, assuming ∆Τ j = 25°C and  CCIESSS CHT<br>Tstart = 150°C.<br>a a ee ee ee ee ee<br>Pt EP E T<br>NS<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 14.   Typical Avalanche Current vs.Pulsewidth<br>1000 Notes on Repetitive Avalanche Curves , Figures 14, 15:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>800 ID = 75A Purely a thermal phenomenon and failure occurs at a temperature far in<br>NE excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type.<br>2. Safe operation in Avalanche is allowed as long as neither Tjmaxjmax nor Iav<br>ENG  is exceeded.<br>600<br>3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.<br>BNNSEEEEEEE 4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase<br>400 during avalanche).<br>6. Iav = Allowable avalanche current.<br>HSS 7. ∆T = Allowable rise in junction temperature, not to exceed∆T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as<br>200 25°C in Figure 14, 15).<br>tav = Average time in avalanche.<br>HLL D = Duty cycle in avalanche =  tav ·f<br>0 THINS ZthJC(D, tav) = Transient thermal resistance, see Figures 13)<br>25 50 75 100 125 150 175<br>PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) = A T/ ZthJCthJC<br>Starting TJ , Junction Temperature (°C) Iav = = 2 A<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type.jmax. This is validated for every part type.. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long as neither Tjmaxjmax nor Iav (max) is exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse.D (ave) = Average power dissipation per single avalanche pulse.= Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. ∆T = Allowable rise in junction temperature, not to exceed∆T = Allowable rise in junction temperature, not to exceedT = Allowable rise in junction temperature, not to exceed = Allowable rise in junction temperature, not to exceedAllowable rise in junction temperature, not to exceed Tjmax jmax (assumed as 25°C in Figure 14, 15). 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =D (ave) = 1/2 ( 1.3·BV·Iav) = = 1/2 ( 1.3·BV·Iav) =av) =) =** A **T/ ZthJCthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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5.0<br>ID = 1.0A<br>4.5 ID = 1.0mA<br>ID = 250µA<br>4.0 Hep scte<br>EXGnp<aee<br>3.5<br>| ASSEN<br>3.0<br>ETS<br>2.5 ERRREEENNE<br>PE<br>2.0<br>1.5 FLITE}EETTEETNNLIN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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16<br>14<br>12 Pt tt eet<br>BRREDLSZa<br>10<br>BRRES Zane<br>8<br>LA<br>6 LY I F  = 30A<br>VR = 64V<br>| | tt<br>4 T  = 125°C<br>J<br>TJ =  25°C<br>ae“iti<br>2<br>=<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage Vs. Temperature 

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16 400<br>14<br>300<br>12<br>BRRERESZasaaapeess a e UOLDLEDEDYe<br>10<br>eet] er<br>200<br>8<br>6 He I F  = 45A 100 soery IF = 30A LL<br>VR = 64V VR = 64V<br>4 T J  = 125°C  TJ = 125°C<br>TJ =  25°C TJ =  25°C<br>oH |<br>2 0<br>100 AGREE 200 300 400 500 600 700 800 = 900 1000 | ) 100 LT 200 300 400 500 600 700 800 = 900 1000<br>dif / dt - (A / µs) dif / dt - (A / µs)<br>IRRM - (A) QRR - (nC)<br>**----- End of picture text -----**<br>


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400<br>iy<br>300<br>¢ va<br>TAT<br>200<br>p oe @ I an F = 45A ae<br>100<br>VR = 64V<br>TJ = 125°C<br>T  =  25°C<br>J<br>TTL<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / µs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$—————— P.W. Period — + D = —— Period<br>) [©)]    •  CircuitLow  LayoutS ConsiderationsInd | t V t GS=10V<br> •<br>-  •   CurrentLow LeakageTransformerInductance ®@ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt /<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘<br>00 > VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Ro ( a8 •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test SO<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" @|\ t<br>* Veg = 5V for Logic Level Devices<br>Fig 21.  Peak Diode Recovery dv/dt Test Circuit or N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS(BR)DSS<br>15V << tp ><br>VDS L DRIVER<br>RG D.U.T +<br>w - [V][DD]<br>IAS A<br>/<br>y 20VVGS aie [dt]<br>tp 0.01 WA Ω IASAS oe<br>**----- End of picture text -----**<br>


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V(BR)DSS(BR)DSS<br><< tp ><br>/<br>IASAS oe<br>Fig 22b.   Unclamped Inductive Waveforms<br>V<br>DS<br>90%<br>10%<br>XA<br>V<br>GS<br>td(on) tr td(off) tf<br>Fig 23b.   Switching Time Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 22b.** Unclamped Inductive Waveforms 

**Fig 22a.** Unclamped Inductive Test Circuit 

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LD<br>VDS<br>+<br>VDD -<br>D.U.T<br>VGS<br>Pulse Width < 1µs<br>Duty Factor < 0.1%<br>Fig 23a.   Switching Time Test Circuit<br>L<br>VCC<br>DUT<br>0<br>1K<br>**----- End of picture text -----**<br>


**Fig 23a.** Switching Time Test Circuit 

**Fig 24a.** Gate Charge Test Circuit 

**Fig 24b.** Gate Charge Waveform 

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TO-220AB packages are not recommended for Surface Mount Application. 

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## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

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**==> picture [394 x 417] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>3.90 (.153) 1.50 (.059) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 7 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>O50 64 =| 15.42 (.609) _ |<br>23.90 (.941)<br>15.22 (.601)<br>TRL oe<br>10.90 (.429) ~ | 1.75 (.069)1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>0000 LT 16.10 (.634) ) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941) TT<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>| OO |<br>30.40 (1.197)<br>NOTES : oO ale       MAX.<br>1.   COMFORMS TO EIA-418.<br>2.   CONTROLLING DIMENSION: MILLIMETER. 26.40 (1.039)24.40 (.961) I 4<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


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4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE.<br>**----- End of picture text -----**<br>


Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 03/06 

www.irf.com 

11 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS3207TRLPBF/power-mosfet-n-channel-75-v-170-a-4500-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfs3207trlpbf/mosfet-n-ch-75v-170a-to-263ab/dp/2580024)
---

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