# Power MOSFET, N Channel, 75 V, 230 A, 0.0025 ohm, TO-263 (D2PAK), Surface Mount

![Product image](https://novapart.co/image/farnell:1688586/)

**URL**: https://novapart.co/products/IRFS3107PBF/power-mosfet-n-channel-75-v-230-a-00025-ohm-to-263
**SKU**: IRFS3107PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.4700
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 370W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 370W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 0.0025ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 230A |
| Drain Source On State Resistance | 0.0025ohm |
| Gate Source Threshold Voltage Max | 2.35V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:1688586/)

## PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET ® Power MOSFET 

> **Applications** ; High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply ° High Speed Power Switching Hard Switched and High Frequency Circuits 

## **Benefits** 

Improved  Gate, Avalanche and Dynamic  dV/dt Ruggedness 

Fully Characterized Capacitance and Avalanche SOA 

Enhanced body diode dV/dt and dI/dt Capability Lead-Free 

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D VDSS 75V<br>eeee<br>RDS(on)   typ. 2.5m<br>              max. 3.0m<br>oS<br>G ID (Silicon Limited) 230A<br>S ID (Package Limited) 195A<br>D<br>D<br>S<br>S D<br>G<br>G<br>D [2] Pak TO-262<br>IRFS3107PbF IRFSL3107PbF<br>**----- End of picture text -----**<br>


|**G**<br>**D**<br>**S**||
|---|---|
|Gate<br>Drain<br>Source||
|**Absolute Maximum Ratings**<br>**Symbol**<br>**Parameter**<br>**Units**<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 100°C<br>Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>ID@ TC= 25°C<br>Continuous Drain Current, VGS@ 10V(Wire Bond Limited)<br>IDM<br>Pulsed Drain Current<br>PD@TC= 25°C<br>Maximum Power Dissipation<br>W<br>Linear DeratingFactor<br>W/°C<br>A<br>370<br>**Max.**<br>230<br>160<br>900<br>195<br>2.5<br>~~oD~~<br>~~x:-_~~<br>~~ef~~<br>~~esQO~~<br>~~esQO~~<br>~~Pf~~<br>~~Oe~~<br>~~a~~<br>~~(~~<br>~~a GO~~||
|VGS<br>Gate-to-Source Voltage<br>V<br>dv/dt<br>Peak Diode Recovery<br>V/ns<br>14<br>± 20<br>~~a FO~~<br>~~a~~<br>~~©Sn~~<br>~~(~~||
|TJ<br>Operating Junction and<br>-55  to + 175||
|TSTG<br>Storage Temperature Range<br>Soldering Temperature, for 10 seconds<br>°C<br>300||
|(1.6mm from case)||
|Mountingtorque,6-32 or M3 screw<br>10lb in(1.1N m)<br>~~a  (~~||
|**Avalanche Characteristics**||
|EAS(Thermallylimited)<br>Single Pulse Avalanche Energy<br>mJ<br>IAR<br>Avalanche Current<br>A<br>EAR<br>Repetitive Avalanche Energy<br>mJ<br>300<br>See Fig. 14, 15, 22a, 22b,<br>~~es~~<br>~~SS~~<br>~~a~~<br>~~rd~~||
|**Thermal Resistance**||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RθJC<br>Junction-to-Case<br>–––<br>0.40<br>RθJA<br>Junction-to-Ambient(PCB Mount)<br>–––<br>40<br>°C/W<br>~~esa~~<br>~~Pm~~||
|www.irf.com<br>1||
|5/2/11||



**Static @ TJ = 25°C (unless otherwise specified)** 

|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|**Static @ TJ = 25°C (unless otherwise specified)J = 25°C (unless otherwise specified) = 25°C (unless otherwise specified)(unless otherwise specified)unless otherwise specified)pecified)ecified))**|
|---|---|
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>V(BR)DSS<br>Drain-to-Source Breakdown Voltage<br>75<br>–––<br>–––<br>V<br>ΔV(BR)DSS/ΔTJBreakdown Voltage Temp. Coefficient<br>–––<br>0.09<br>–––<br>V/°C<br>**Conditions**<br>VGS= 0V,ID= 250μA<br>Reference to 25°C,ID= 5mA<br>~~a GG~~<br>~~**Q**O~~<br>~~aG QO~~<br>~~OT~~||
|RDS(on)<br>Static Drain-to-Source On-Resistance<br>–––<br>2.5<br>3.0<br>mΩ<br>VGS(th)<br>Gate Threshold Voltage<br>2.0<br>–––<br>4.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>20<br>μA<br>–––<br>–––<br>250<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>RG<br>Internal Gate Resistance<br>–––<br>1.2<br>–––<br>Ω<br>VGS= 10V,ID= 140A<br>VDS= VGS,ID= 250μA<br>VDS= 75V,VGS= 0V<br>VDS= 75V,VGS= 0V,TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~Pf~~<br>~~aQQ~~<br>~~QO~~<br>~~ES~~<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~_——————————_————eEE~~<br>~~GG~~<br>~~aGQ~~<br>~~QO~~||
|**Dynamic @ TJ = 25°C(unless otherwise specified)**||
|**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>gfs<br>Forward Transconductance<br>230<br>–––<br>–––<br>S<br>Qg<br>Total Gate Charge<br>–––<br>160<br>240<br>nC<br>**Conditions**<br>VDS= 50V,ID= 140A<br>ID= 140A<br>~~a GG~~<br>~~**Q**O~~<br>~~aG QO~~<br>~~a~~||
|Qgs<br>Gate-to-Source Charge<br>–––<br>38<br>–––<br>VDS=38V<br>~~a~~||
|Qgd<br>Gate-to-Drain("Miller")Charge<br>–––<br>54<br>Qsync<br>Total Gate Charge Sync.(Qg- Qgd)<br>–––<br>106<br>–––<br>td(on)<br>Turn-On DelayTime<br>–––<br>19<br>–––<br>ns<br>VGS= 10V<br>VDD= 49V<br>ID= 140A,VDS=0V,VGS= 10V<br>~~a~~<br>~~aGQ~~<br>~~QO ce~~<br>~~a~~||
|tr<br>Rise Time<br>–––<br>110<br>–––<br>ID= 140A<br>~~a~~||
|td(off)<br>Turn-Off DelayTime<br>–––<br>99<br>–––<br>RG= 2.7Ω<br>~~aDG~~||
|tf<br>Fall Time<br>–––<br>100<br>–––<br>VGS= 10V<br>~~a DG~~||
|Ciss<br>Input Capacitance<br>–––<br>9370<br>–––<br>pF<br>VGS= 0V<br>~~a DG~~||
|Coss<br>Output Capacitance<br>–––<br>840<br>–––<br>VDS= 50V<br>~~aDG~~||
|Crss<br>Reverse Transfer Capacitance<br>–––<br>580<br>–––<br>ƒ= 1.0 MHz,See Fig. 5<br>~~a DG~~||
|Cosseff.(ER)<br>Effective Output Capacitance(EnergyRelated)–––<br>1130<br>–––<br>VGS= 0V,VDS= 0V to 60V<br>,See Fig. 11<br>~~a DG~~||
|Cosseff.(TR)<br>Effective Output Capacitance(Time Related)<br>–––<br>1500<br>–––<br>**Diode Characteristics**<br>VGS= 0V,VDS= 0V to 60V<br>~~a =)~~||
|D<br>**Symbol**<br>**Parameter**<br>**Min. Typ. Max. Units**<br>IS<br>Continuous Source Current<br>–––<br>–––<br>230<br>A<br>MOSFET symbol<br>**Conditions**<br>~~a GQ~~<br>~~QO~~||
|(Body Diode)<br>showing  the||
|G<br>ISM<br>Pulsed Source Current<br>–––<br>–––<br>900<br>A<br>(Body Diode)<br>VSD<br>Diode Forward Voltage<br>–––<br>–––<br>1.3<br>V<br>trr<br>Reverse Recovery Time<br>–––<br>54<br>–––<br>ns<br>TJ= 25°C<br>VR= 64V,<br>–––<br>60<br>–––<br>TJ= 125°C<br>IF= 140A<br>Qrr<br>Reverse Recovery Charge<br>–––<br>103<br>–––<br>nC<br>TJ= 25°C<br>di/dt = 100A/μs<br>–––<br>132<br>–––<br>TJ= 125°C<br>IRRM<br>Reverse RecoveryCurrent<br>–––<br>3.6<br>–––<br>A<br>TJ= 25°C<br>ton<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>TJ= 25°C,IS= 140A,VGS= 0V<br>integral reverse<br>p-n junction diode.<br>~~eo~~<br>~~Pe~~<br>~~ee~~<br>~~||~~<br>~~ee~~<br>~~**|**~~<br>~~a~~<br>~~a~~|S|



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current 

limitations arising from heating of the device leads may occur with 

ISD ≤ 140A, di/dt ≤ 1380A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. 

Pulse width ≤ 400μs; duty cycle ≤ 2%. 

Coss eff. (TR) is a fixed capacitance that gives the same charging time 

some lead mounting arrangements. (Refer to AN-1140) as Coss while VDS is rising from 0 to 80% VDSS. 

®@ Repetitive rating;  pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the same energy as temperature. Coss while VDS is rising from 0 to 80% VDSS. ® Limited by TJmax, starting TJ = 25°C, L = 0.045mH When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom RG = 25 Ω , IAS = 140A, VGS =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994. above this value . @R θ is measured at T, approximately 90°C 

When mounted on 1" square PCB (FR-4 or G-10 Material).  For recom mended footprint and soldering techniques refer to application note #AN-994. 

θ 

θ JC 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>4.8V<br>BOTTOM 4.5V<br>100 Bi i<br>VA<br>8 eee Saal<br>4.5V<br>by |<br>≤  60μs PULSE WIDTH<br>Tj = 25°C<br>10 a nia Hn |<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>——<br>PT | Le<br>100 TJ = 175 ° C<br>TJ = 25°C<br>10 [AL<br>VDS = 25V<br>≤  60μs PULSE WIDTH<br>1 naef<br>2.0 3.0 4.0 5.0 6.0 7.0<br>VGS, Gate-to-Source Voltage (V)<br>Fig 3.   Typical Transfer Characteristics<br>16000<br>VGS   = 0V,       f = 100 kHz<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>Crss   = Cgd<br>12000 C oss   = C ds  + C gd<br>alpo Ciss TTT TTI<br>8000<br>Tic<br>4000<br>Coss<br>Mt<br>Crss<br>ma a<br>0<br>1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. Drain-to-Source Voltage 

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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V<br>7.0V<br>6.0V<br>5.5V<br>4.8V<br>BOTTOM 4.5V<br>4.5V<br>f a ll<br>100<br>ll<br>eee ey Alemania26 ee |<br>≤  60μs PULSE WIDTH<br>Tj = 175°C<br>2alii |<br>10<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 2.** Typical Output Characteristics 

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2.5<br>ID = 140A<br>VGS = 10V<br>2.0 LELD<br>1.5<br>a<br>ie<br>1.0<br>peALLL ELLE<br>0.5<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Normalized On-Resistance vs. Temperature 

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16<br>ID= 140A<br>VDS= 60V<br>12 VDS= 38V<br>ca 7en“ eey<br>8<br>fr<br>4<br>po ane<br>0 fey<br>0 40 80 120 160 200 240<br> QG  Total Gate Charge (nC)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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1000 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>TJ = 175°C<br>1000<br>100<br>10 0μsec<br>1 mse c<br>f i 100 a see<br>1 0ms ec<br>10<br>| A f TJ = 25°C | Eeeee LIMITED BY PACKAGE ia cne<br>10<br>1<br>1 DC<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1 Af — ff fT— 0.1 —nePT ra<br>0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)<br>Fig 7.   Typical Source-Drain Diode Fig 8.   Maximum Safe Operating Area<br>Forward Voltage<br>250 100<br>LIMITED BY PACKAGE ID = 5mA<br>200<br>aa ETE<br>90<br>150<br>100<br>PNT 80 HATE<br>50<br>0 C ECHTF 70 LLL af<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Drain-to-Source Breakdown Voltage<br>Case Temperature<br>4.0 1400<br>                 I D<br>1200 TOP          21A<br>                49A<br>3.0 BOTTOM   140A<br>Pf | 1000 —<br>800 ONE<br>Ter} Nn<br>2.0<br>600<br>400<br>1.0 An SeNeam<br>200<br>0.0 Eyi 0 | |ORS<br>0 20 40 60 80 25 50 75 100 125 150 175<br>_— | BBS<br>VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>ID , Drain Current (A)<br>V(BR)DSS , Drain-to-Source Breakdown Voltage<br>Energy (μJ)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 10.** Drain-to-Source Breakdown Voltage 

**Fig 11.** Typical COSS Stored Energy 

**Fig 12.** Maximum Avalanche Energy Vs. DrainCurrent 

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TOR Rectifier<br>1<br>FAAPE EEE<br>D = 0.50<br>0.1 Py 0.20 CrHT<br>0.10<br>0.05<br>0.01 0.02 R 1 R1 R 2 R2 R 3R3 Ri (°C/W) τι  (sec)<br>0.01 τ J τ J τ C τ 0.047711 0.000071<br>τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 0.16314 0.000881<br>0.001 li SINGLE PULSE Ci=  Ci=  τ i / τ Ri i / Ri 0.189304 0.007457<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 13.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>1000 pop Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche  ER<br>pulsewidth, tav, assuming  Δ Tj = 150°C and<br>Bt<br>pt Tstart =25°C (Single Pulse) il<br>100 TTON<br>SSSR SZ<br>= 0.010.05 SSH PRL I TF<br>10 pt | | 0.10 Te | LEETRAE<br>FEEESN<br>pS Allowed avalanche Current vs avalanche  HEHE<br>pulsewidth, tav, assuming  ΔΤ j = 25°C and<br>Tstart = 150°C.<br>1 Fo OTIS | LE LE | HUET opr YY} + 44<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Thermal Response ( Z thJC )<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 14.** Typical Avalanche Current vs.Pulsewidth 

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350<br>TOP          Single Pulse<br>300 BOTTOM   1% Duty Cycle<br>ID = 140A<br>250 STLIN | a<br>200 NENG<br>150 ENON<br>NX EEE EEL<br>BER NJ<br>100<br>DNONGREEE<br>50 PELE NON EL<br>B R NSNG\ ‘NX<br>0<br>25 50 75 100 125 150 175<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com)** 

1. Avalanche failures assumption: 

- Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

6. Iav = Allowable avalanche current. 

7. Δ T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

- tav = Average time in avalanche. 

- D = Duty cycle in avalanche =  tav ·f 

- ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 

**PD (ave) = 1/2 ( 1.3·BV·Iav) =** A **T/ ZthJC Iav = 2** A **T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

**Fig 15.** Maximum Avalanche Energy vs. Temperature 

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4.5<br>ID = 1.0A<br>4.0 I D  = 1.0mA<br>ID = 250μA<br>3.5 -  PSs) PSA<br>3.02.5 B RRRaNNEE ENN<br>ERERREANNG<br>2.0<br>1.5<br>Lit TT TTINSaw<br>1.0<br>Pi} i ttt titsN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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32<br>24 ae<br>16<br>io<br>iy<br>IF = 90A<br>8<br>VR = 64V<br>e z Y TJ = 125°C<br>TJ =  25°C<br>0<br>a<br>100 200 300 400 500 600 700 800 900<br>dif / dt - (A / μs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Threshold Voltage Vs. Temperature 

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32<br>24<br>:LT<br>168 YVa nn IF = 135A<br>VR = 64V<br>TJ = 125°C<br>TJ =  25°C<br>0<br>100 200 300 400 500 600 700 800 900<br>dif / dt - (A / μs)<br>IRRM - (A)<br>**----- End of picture text -----**<br>


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800<br>600<br>400 a ta<br>200 4 y oe | IF  Ld = 90A<br>VR = 64V<br>TJ = 125°C<br>TJ =  25°C<br>0<br>100 200 300 400 500 600 700 800 900<br>dif / dt - (A / μs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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800<br>600<br>ae<br>400<br>IF = 135A<br>200<br>VR = 64V<br>TJ = 125°C<br>TJ =  25°C<br>0<br>100 200 300 400 500 600 700 800 900 1000<br>dif / dt - (A / μs)<br>QRR - (nC)<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>+ P.W. Period<br>D.U.T {$$ | ————| —— |t<br>VGS=10V<br>) ©)    •  Circuit Layout Considerations |<br> •<br>| —| - LowGround StrayPla I n eductance<br> •   Low Leakage Inductance ® D.U.T. ISD Waveform<br>+<br>Reverse<br>Recovery Body Diode Forward<br>0) - a = Current Transformer - ® + Current r Current = di/dt /<br>00 ® D.U.T. VDS Waveform Diode Recovery =<br>dv/dt ‘ VDD<br>ma<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( aA •   dv/dt controlled by Rg Vpp -<br>•<br>D.U.T. - Device Under Test es ae<br>Ripple  ≤ 5% ISD<br>Isp controlled by Duty Factor "D" iO) t<br>* Veg = 5V for Logic Level Devices<br>Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel<br>HEXFET ® Power MOSFETs<br>V(BR)DSS<br>15V < tp ><br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>20VVGS<br>tp 0.01 Ω IAS<br>**----- End of picture text -----**<br>


**Fig 22a.** Unclamped Inductive Test Circuit 

## **Fig 22b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1  us<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


## **Fig 23a.** Switching Time Test Circuit 

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Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 μ F<br>.3 μ F<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>WAN IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 24a.** Gate Charge Test Circuit 

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VDS<br>90%<br>\<br>10%<br>VGS |«le ys| |<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


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Fig 23b.   Switching Time Waveforms<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Id<br>Vds<br>Vgs<br>Vgs(th)<br>t [pie] g [p] [i] [e] w i e > !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 24b.** Gate Charge Waveform 

www.irf.com 

7 

## TO-262 Package Outline 

Dimensions are shown in millimeters (inches) 

## TO-262 Part Marking Information 

**==> picture [375 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRL3103L<br>LOT CODE 1789 PART NUMBER<br>ASSEMBLED ON WW 19, 1997 INTERNATIONAL oN a<br>IN THE ASSEMBLY LINE "C" RECTIFIER \ IRL31031<br>LOGO<br>DATE CODE<br>a YEAR 7 =  1997<br>Note: Pin assembly line position ASSEMBLY<br>WEEK 19<br>LOT CODE<br>LINE C<br>**----- End of picture text -----**<br>


## OR 

**==> picture [250 x 101] intentionally omitted <==**

**----- Start of picture text -----**<br>
PART NUMBER<br>INTERNATIONAL oS a<br>RECTIFIER<br>LOGO<br>TeaR P79 te<br>DATE CODE<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY<br>LOT CODE PRODUCT (OPTIONAL)<br>YEAR 7 =  1997<br>WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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**==> picture [365 x 230] intentionally omitted <==**

**----- Start of picture text -----**<br>
THIS IS AN IRF530S WITH<br>LOT CODE 8024 INTERNATIONAL CY, L PART NUMBER<br>ASSEMBLED ON WW 02, 2000 RECTIFIER F530S<br>IN THE ASSEMBLY LINE "L" LOGO<br>DATE CODE<br>YEAR 0 =  2000<br>ASSEMBLY<br>WEEK 02<br>LOT CODE<br>LINE L<br>OR<br>PART NUMBER<br>INTERNATIONAL CK a a<br>RECTIFIER F530S<br>LOGO DATE CODE<br>P =  DESIGNATES LEAD - FREE<br>80 24<br>PRODUCT (OPTIONAL)<br>ASSEMBLY 4 [| LJ [|<br>LOT CODE crane YEAR 0 =  2000<br>U U WEEK 02<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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Dimensions are shown in millimeters (inches) 

**==> picture [404 x 202] intentionally omitted <==**

**----- Start of picture text -----**<br>
TRR<br>1.60 (.063)<br>1.50 (.059)<br>1.60 (.063)<br>4.10 (.161)<br>1.50 (.059)<br>3.90 (.153) 0.368 (.0145)<br>0.342 (.0135)<br>FEED DIRECTION 1.85 (.073) 11.60 (.457)<br>1.65 (.065) 11.40 (.449) 24.30 (.957)<br>15.42 (.609)<br>23.90 (.941)<br>15.22 (.601)<br>TRL<br>1.75 (.069)<br>10.90 (.429) 1.25 (.049)<br>10.70 (.421) 4.72 (.136)<br>16.10 (.634) 4.52 (.178)<br>15.90 (.626)<br>FEED DIRECTION<br>**----- End of picture text -----**<br>


**==> picture [394 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
13.50 (.532) 27.40 (1.079)<br>12.80 (.504) 23.90 (.941)<br>4<br>330.00 60.00 (2.362)<br>(14.173)       MIN.<br>  MAX.<br>30.40 (1.197)<br>NOTES :       MAX.<br>1.   COMFORMS TO EIA-418.<br>26.40 (1.039) 4<br>2.   CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)<br>3.   DIMENSION MEASURED @ HUB.<br>3<br>**----- End of picture text -----**<br>


4.   INCLUDES FLANGE DISTORTION @ OUTER EDGE. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101N. Sepulveda., El Segundo, California 90245, USA Tel: (310) 2527105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact informationwww.irf.com **.** 5/2011 

10 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFS3107PBF/power-mosfet-n-channel-75-v-230-a-00025-ohm-to-263)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/en-ES/infineon/irfs3107pbf/mosfet-n-ch-75v-d2pak/dp/1688586)
---

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