# Power MOSFET, N Channel, 200 V, 9.4 A, 0.38 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725976RL/)

**URL**: https://novapart.co/products/IRFR9N20DTRPBF/power-mosfet-n-channel-200-v-94-a-038-ohm-to-252aa
**SKU**: IRFR9N20DTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.8200
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| Channel Type | N Channel |
| Power Dissipation | 86W |
| Drain Source On State Resistance | 0.38ohm |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725976RL/)

PD - 95376A IRFR9N20DPbF IRFU9N20DPbF HEXFET ® Power MOSFET 

## **SMPS MOSFET** 

## **Applications** 

|**VDSS**|**VDSS**|**RDS(on) max**|**max**||**ID**|**ID**|
|---|---|---|---|---|---|---|
|**200V**||**0.38**Ω|||**9.4A**||
||||||||
|||D-Pak|I-Pak||||
|||IRFR9N20D|IRFU9N20D||||



High frequency DC-DC converters Lead-Free 

## **Benefits** 

Low Gate-to-Drain Charge to Reduce Switching Losses | Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) 

Fully Characterized Avalanche Voltage and Current 

## **Absolute Maximum Ratings** 

**Parameter Max. Units** ~~$9~~ ID @ TC = 25°C Continuous Drain Current, VGS @ 10V [ 9.4 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.7 A ~~——————~~ IDM Pulsed Drain Current 38 ~~——~~ PD @TC = 25°C ~~a~~ Power Dissipation 86 W ~~ph~~ Linear Derating Factor 0.57 W/°C VGS Gate-to-Source Voltage ± 30 V ~~oo~~ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55  to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) ~~ee a~~ 

## **Typical SMPS Topologies** 

Telecom 48V input  Forward Converter 

Notes hrough are on page 10 

www.irf.com 

1 12/06/04 

**Static @ TJ = 25°C (unless otherwise specified)** 

|~~==~~|**Parameter**<br>~~==~~|**Parameter**<br>~~==~~|**Min.**<br>~~==~~|**Typ. **<br>~~==~~|**Max. **<br>~~==~~|**Max. **<br>~~==~~|**Units**<br>~~==~~|**Conditions**<br>~~==~~|**Conditions**<br>~~==~~|**Conditions**<br>~~==~~|
|---|---|---|---|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~==~~<br>~~en~~<br>~~es~~|Drain-to-Source Breakdown Voltage<br>~~==~~<br>~~en~~<br>~~es~~||200<br>~~==~~<br>~~en~~|–––<br>~~==~~<br>~~en~~|–––<br>~~==~~<br>~~en~~||V<br>~~==~~<br>~~en~~|VGS= 0V, ID= 250µA<br>~~==~~<br>~~®~~|||
|∆V(BR)DSS/∆TJ<br>~~==~~<br>~~es~~<br>~~en~~|JBreakdown Voltage Temp. Coefficient –––     0.23    –––     V/°C    Reference to 25°C, I<br>~~==~~<br>~~es~~<br>~~en~~||–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~==~~|–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~==~~|–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~==~~||–––     0.23    –––     V/°C    Reference to 25°C, I<br>~~==~~|–––     0.23    –––     V/°C    Reference to 25°C, ID= 1mA<br>~~==~~<br>~~®~~<br>~~@~~|||
|RDS(on)<br>~~==~~<br>~~es~~<br>~~en~~|Static Drain-to-Source On-Resistance<br>~~==~~<br>~~es~~<br>~~en~~||–––<br>~~==~~|–––<br>~~==~~|0.38<br>~~==~~||Ω<br>~~==~~|VGS= 10V, ID= 5.6A<br>~~==~~<br>~~®~~<br>~~@~~|||
|VGS(th)<br>~~==~~<br>~~en~~<br>~~se~~|Gate Threshold Voltage<br>~~==~~<br>~~en~~<br>~~se~~<br>~~|~~||3.0<br>~~==~~<br>~~se~~<br>~~||~~<br>~~|~~|–––<br>~~==~~<br>~~se~~<br>~~||~~<br>|5.5<br>~~==~~<br>~~se~~<br>~~||~~<br>||V<br>~~==~~<br>~~se~~<br>~~||~~<br>|VDS= VGS, ID= 250µA<br>~~==~~<br>~~@~~|||
|IDSS<br>~~==~~|Drain-to-Source Leakage Current<br>~~==~~<br>~~|~~TT||–––<br>~~==~~<br>~~||~~<br>~~|~~|–––<br>~~==~~<br>~~||~~<br>|25<br>~~==~~<br>~~||~~<br>||µA<br>~~==~~<br>~~||~~<br>TT|VDS= 200V, VGS= 0V<br>~~==~~|||
||||–––<br>~~==~~<br>~~||~~<br>~~|~~TT|–––<br>~~==~~<br>~~||~~<br>TT|250<br>~~==~~<br>~~||~~<br>TT|||VDS= 160V, VGS= 0V, TJ= 150°C<br>~~==~~|||
|IGSS|Gate-to-Source Forward Leakage<br>~~|~~<br>~~a~~||–––<br>~~||~~<br>~~|~~<br>~~a~~|–––<br>~~||~~<br><br>~~a~~|100<br>~~||~~<br><br>~~a~~||nA<br>~~||~~<br><br>~~a~~|VGS= 30V|||
||Gate-to-Source Reverse Leakage<br>~~a~~||–––<br>~~a~~|–––<br>~~a~~|-100<br>~~a~~|||VGS= -30V|||
|**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>~~eees~~<br>~~ee~~|||||||||||
|~~Ee~~<br>~~e~~|**Parameter**<br>es<br>~~Ee~~<br>~~e~~||**Min.**<br>es<br>~~ee~~<br>~~Ee~~<br>~~ee~~|**Typ. **<br>es<br>~~es~~<br>~~Ee~~<br>~~e~~|**Max. **<br>es<br>~~Ee~~<br>~~e~~||**Units**<br>es<br>~~Ee~~<br>~~e~~|**Conditions**<br>es<br>~~e~~|||
|gfs<br>~~Ee~~<br>~~e~~|Forward Transconductance<br>~~es~~<br>~~Ee~~<br>~~e~~||4.3<br>~~ee ~~<br>~~es~~<br>~~Ee~~<br>~~ee~~|–––<br> ~~es~~<br>~~es~~<br>~~Ee~~<br>~~e~~|–––<br>~~es~~<br>~~Ee~~<br>~~e~~||S<br>~~es~~<br>~~Ee~~<br>~~e~~|VDS= 50V, ID= 5.6A<br>~~es~~<br>~~e~~|||
|Qg<br>~~Ee~~<br>~~e~~|Total Gate Charge<br>~~a~~<br>~~Ee~~<br>~~e~~||–––<br>~~a~~<br>~~Ee~~<br>~~ee~~|18      27               I<br>~~a~~<br>~~Ee~~<br>~~e~~|18      27               I<br>~~a~~<br>~~Ee~~<br>~~e~~||18      27               I<br>nC<br>~~Ee~~<br>~~e~~|18      27               ID= 5.6A<br>VDS= 160V<br>VGS= 10V,<br>~~@~~<br>~~e~~|||
|Qgs<br>~~Ee~~<br>~~e~~|Gate-to-Source Charge<br>~~Ee~~<br>~~ee~~<br>~~e~~||–––<br>~~Ee~~<br>~~es~~<br>~~ee~~|4.7<br>~~Ee~~<br>~~e~~|7.1<br>~~Ee~~<br>~~e~~||||||
|Qgd<br>~~Ee~~<br>~~a~~<br>~~Rse~~|Gate-to-Drain("Miller")Charge<br>~~Ee~~<br>~~ee~~<br>~~a~~<br>~~e~~||–––<br>~~Ee~~<br>~~es~~<br>~~ee~~|9.0<br>~~Ee~~<br>~~e~~|14<br>~~Ee~~<br>~~e~~||||||
|td(on)<br>~~Ee~~<br>~~a~~<br>~~Rse~~|Turn-On Delay Time<br>~~Ee~~<br>~~ee~~<br>~~a~~<br>~~e~~||–––<br>~~Ee~~<br>~~es~~<br>~~ee~~|7.5<br>~~Ee~~<br>~~e~~|–––<br>~~Ee~~<br>~~e~~||ns<br>~~Ee~~<br>~~e~~|VDD= 100V<br>ID= 5.6A<br>RG= 11Ω<br>VGS= 10V<br>~~@~~<br>~~e~~|||
|tr<br>~~a~~<br>~~Rse~~|Rise Time<br>~~a~~<br>~~e~~||–––<br>~~ee~~|16<br>~~e~~|–––<br>~~e~~||||||
|td(off)<br>~~a~~<br>~~Rse~~|Turn-Off Delay Time<br>~~a~~<br>~~e~~||–––<br>~~ee~~|13<br>~~e~~|–––<br>~~e~~||||||
|tf<br>~~e~~|Fall Time<br>~~e~~||–––<br>~~ee~~|9.3<br>~~e~~|–––<br>~~e~~||||||
|Ciss<br>~~e~~<br>es|Input Capacitance<br>~~e~~||–––<br>~~ee~~|560<br>~~e~~|–––<br>~~e~~||pF<br>~~e~~|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz<br>~~e~~|||
|Coss<br>~~e~~<br>es<br>Rs|Output Capacitance<br>~~e~~||–––<br>~~ee~~|97<br>~~e~~|–––<br>~~e~~||||||
|Crss<br>es<br>Rs<br>es|Reverse Transfer Capacitance||–––|29|–––||||||
|Coss<br>Rs<br>es<br>es|Output Capacitance||–––|670|–––|||VGS= 0V,  VDS= 1.0V,  ƒ = 1.0MHz|||
|Coss<br>es<br>es<br>Ps|Output Capacitance<br>a||–––|40|–––|||VGS= 0V,  VDS= 160V,  ƒ = 1.0MHz<br>®|||
|Cosseff.<br>es<br>Ps|Effective Output Capacitance<br>a||–––|74|–––|||VGS= 0V, VDS= 0V to 160V<br>®|||
|**Avalanche Characteristics**<br>Psa<br>®<br>Beee|||||||||||
|Be||**Parameter**<br>ee||||**Typ.**|||**Max.**|**Units**|
|EAS<br>Be<br>sO||Single Pulse Avalanche Energy<br>ee<br>sO||||–––<br>sO|||100<br>sO|mJ<br>sO|
|IAR<br>Sn||Avalanche Current<br>Sn||||–––<br>Sn|||5.6<br>Sn|A<br>Sn|
|EAR<br>Sn<br>©||Repetitive Avalanche Energy<br>Sn<br>©||||–––<br>Sn<br>©|||8.6<br>Sn<br>©|mJ<br>Sn|
|**Thermal Resistance**|||||||||||
|||**Parameter**||||**Typ.**|||**Max.**|**Units**|
|RθJC||Junction-to-Case||||–––|||1.75|°C/W|
|RθJA||Junction-to-Ambient (PCB mount)*||||–––|||50||
|RθJA||Junction-to-Ambient||||–––|||110||



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**----- Start of picture text -----**<br>
 100 VGS  100 VGS<br>TOP 15V TOP 15V<br>12V 12V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.5V 6.5V<br>6.0V 6.0V<br>BOTTOM 5.5V BOTTOM 5.5V<br> 10 p ee  10 a E<br>5.5V<br>Samat) om po fh mm<br> 1  1<br>ee ee eel Fe<br>PY | i Ay FT Ty 5.5V Pail Ee 20 ee eee el<br>0.1 ALYCLL A 20µs PULSE WIDTHT  = 25J °C 0.1 4AilAiLh i 20µs PULSE WIDTHT  = 175 e J o °C o<br>0.1  1  10  100 0.1  1  10  100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br> 100 3.0<br>ID = 9.4A<br>=====—=— 2.5 PE E EEE EE<br>a —— ae Cre<br> 10 T  = 175  CJ ° 2.0<br>of<br>ff 1.5 PELE TAT<br>T  = 25  CJ °<br>a ptt tt ty tt<br> 1 1.0<br>S S an ne aaapz<br>a 0.5 eT ETT TTT FFT<br>V      = 50VDS<br>0.1 |T| | | | p 20µs PULSE WIDTH 0.0 FTft >ttT tT t tT_E_EEE_EL_Ltt] VGS TL = 10V [I<br>4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>V     , Gate-to-Source Voltage (V)GS T  , Junction TemperatureJ (  C)°<br>D D<br>I   ,  Drain-to-Source Current (A) I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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10000<br>VGS   = 0V,       f = 1 MHZ<br>Ciss    = Cgs + Cgd,   Cds    SHORTED<br>Crss    = Cgd<br>Coss   = Cds + Cgd<br>1000 a ul |<br>Ciss<br>P S T<br>100 Coss<br>C PPS TE TT<br>Crss<br>PPP, IF cl<br>10<br>1 10 100 1000<br>PE F e  | |<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs.<br>Drain-to-Source Voltage<br> 100<br>| [| tT | dt | dT emt<br> 10<br>T  = 175  CJ °<br>BS ASS<br>ee | a<br> 1<br>tT Vi iA Tt<br>T  = 25  CJ °<br>V      = 0 V GS<br>0.1 Pi PTA<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>V     ,Source-to-Drain Voltage (V)SD<br>I     , Reverse Drain Current (A)SD<br>C, Capacitance(pF)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

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20<br>ID = 5.6A<br>VDS = 160V<br>16 VDS = 100V<br>VDS = 40V<br>He ZYBere<br>12 PL ETL YAEL<br>8<br>SEG07/A0000<br>4 PILTT<br>FOR TEST CIRCUIT<br>0 7Alr eee SEE FIGURE       13<br>0 5 10 15 20 25 30<br>Q   , Total Gate Charge (nC)G<br>Fig 6.   Typical Gate Charge Vs.<br>Gate-to-Source Voltage<br> 1000<br>OPERATION IN THIS AREA LIMITED<br>BY RDS(on)<br> 100 ee lll<br>10us<br>iain Aili Seni le|<br> 10 HAS SUS<br>100us<br>PTT Matec 1ms TIlE<br> 1<br>10ms<br> T TCJ = 25  C= 175  C° °<br> Single Pulse<br>0.1 iA om<br> 1  10  100  1000<br>V     , Drain-to-Source Voltage (V)DS<br>GS<br>V     , Gate-to-Source Voltage (V)<br>I   , Drain Current (A) D<br>**----- End of picture text -----**<br>


**Fig 8.** Maximum Safe Operating Area 

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10.0 SEPT EEE EL td Yes Rp |<br>8.0 PPNUETE E Yes (Nout<br>-<br>PTT PN ETT ET S L Veo<br>6.0<br>SERRERNGEEEE vy<br>≤ 1<br>PTET TT TING TT cocan ≤ 0.1 %<br>4.0<br>PTT TTT TT PNT Sarr :<br>Fig 10a.   Switching Time Test Circuit<br>PTT TTT TT PT NT<br>2.0 PTT TTT TT TT Py VDS<br>90%<br>PTT ET Ty Ty yy )<br>0.0 SERRE |<br>25 50T   , Case TemperatureC 75 100 125 (  C)° 150 175 ||<br>10%<br>VGS | |<br>Fig 9.   Maximum Drain Current Vs. td(on) tr td(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10<br>ee<br>po<br> 1 e D = 0.50 el | eer<br>0.20<br>e ar<br>|_| fo ee<br>0.10<br>0.05 PDM<br>0.1 S ooe rel<br>0.02 SINGLE PULSE t1<br>0.01 (THERMAL RESPONSE)<br>ee t2<br>ee ee eee 1. Duty factor D =Notes: t   / t1 2<br>ee 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>Poe 20V<br>tp 0.01Ω<br>Fig 12a.   Unclamped Inductive Test Circuit<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>_ tp<br>/ / |<br>IAS AL<br>**----- End of picture text -----**<br>


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200<br>ID<br>Ga<br>TOP 2.3A<br>4.0A<br>NET<br>160 ENGR BOTTOM 5.6A<br>120 NENSE<br>QONBNEE EERE<br>80 INNKX EE<br>ONAN<br>40<br>potPot SSATE<br>OSSI<br>Pt TE SS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction TemperatureJ (  C)°<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

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Current Regulator<br>Same Type as D.U.T.<br>QG<br>50KΩ<br>12V .2µF<br>* IT? .3µ a F<br>QGS QGD +<br>D.U.T. -VDS<br>VG VGS<br>Mo, 6<br>/ a 3mA |<br>IG ID<br>Charge = Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

**Fig 13b.** Gate Charge Test Circuit 

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D.U.T + Circuit Layout Considerations<br>™    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| - Current Transformer<br>+<br>- - +<br>(0<br>®<br>Rg •   dv/dt controlled by Rg +<br>•   Driver same type as D.U.T. -<br>•<br>•   D.U.T. - Device Under Test<br>(1) Isp controlled by Duty Factor "D"<br>® Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. | Period _t<br>VGS=10V<br>t<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current ii Current di/dt /<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied<br>Voltage Body Diode  ae Forward Drop _<br>® Inductor Curent ee ee<br>Ripple  ≤ 5% ISD<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL ><br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>o e LINE A<br>Note: "P" in assembly line position ASSEMBLY eal<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL ——<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY eal WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>LOT CODE 5678ASSEMBLED ON WW 19, 1999WITH ASSEMBLY INTERNATIONALRECTIFIERLOGO ~— 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>Note: position indicates "Lead-Free" "P" in assembly line  LOT CODE<br>PART NUMBER<br>INTERNATIONAL ——<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>eooogeoo\ 4 oeoo/4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE, GIO),<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X hk<br>**----- End of picture text -----**<br>


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NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Repetitive rating;  pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. 

@ Starting TJ = 25°C, L = 6.4mH © Coss eff. is a fixed capacitance that gives the same charging time RG = 25Ω, IAS = 5.6A. as Coss while VDS is rising from 0 to 80% VDSS ©) ISD ≤ 5.6A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

When mounted on 1" square PCB (FR-4 or G-10 Material). 

For recommended footprint and soldering techniques refer to application note #AN-994. 

Data and specifications subject to change without notice. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

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Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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