# Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252 (DPAK), Surface Mount
**URL**: https://novapart.co/products/IRFR9120NTRPBF/power-mosfet-p-channel-100-v-66-a-048-ohm-to-252
**SKU**: IRFR9120NTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3540
**Stock**: 1000+
**Lead Time**: 127 days (indicative)
## Description
Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V;
## Specifications
| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | Lead (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.6A |
| Drain Source On State Resistance | 0.48ohm |
| Gate Source Threshold Voltage Max | 4V |
## Datasheet
📄 [Download PDF](https://novapart.co/datasheet/farnell:2101422RL/)
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D
Voss = -100V
Rpsvon) =0.48 Ω
G
Ip =-6.6A
S
~ d SS <2
> Te° ANNyoy
D-Pak I-Pak
TO-252AA TO-251AA
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| θ Parameter
Ric |
[Ra] Junetion-to-Ambient (PCB moun™
[Ra | Junetion-to-Ambient
www.irf.com
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1
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[Parameter
Viarjoss | Min.|Typ.|Max.[Units] Conditions —_—_—|
| Drain-to-Source Breakdown Voltage | -100[——[—— | V | Ves=0V.lo=-2500A
∆ ∆
Ω
Rosin __| Static Drain-to-Source On-Resistance| ——- |——|048[ | Ves=-10V,[p=-39A@ |
Vesti) [Gate Threshold Voltage | -2.0 [—|-40| V | Vps=Vos.fo=-250NA
Ge | Forward Transconductance (| 1.4 |——|——| S | Vps=-S0V,Ip=-4080
tes [Dinter Lage Curent |=} Tao] [ieee anv ae T SS —
js (aa [Gate-to-Source Sour Foard tena [ —[— [100g [Yess 20
GQ, TotalGateChargeReverse Leakage | —— | — | -100]
| | Gateto-Source Charge «| «| —-||| —-| 5027 | ne—*| | Vt o s= “AOA= -80V
[terre tan) | [Turm-OnDelayTime———SS«|] [a [aT Sean emenoe
fe *([RiseTime SS SSSSC*d ——|| A14|——|J],_|| Vooto =-40= - 8 0V
2 Ω
—SSS~S~C Ω,
t fFalTime | |__| Row12_ See Fy. 1006 D
from package G
aH | 6mm (0.26in.) &
Css__| Input Capacitance ——=S~S~dCS | S| ‘ | Vers = OV S
| Output CapReverse Tr a nsfercitanceCapacitance|| — —~— | 11070 |——| | — | _pF|| f=Vos 1.0MHz, = -25V See Fig. 80
Source-Drain Ratings and Characteristics
[_Parameter————~|
D
Is Continuous Source Current Min.[Typ.[Max.[Units[ MOSFET Conditions symbol __—_—s
Isu Pulsed Source Current integral reverse G
Vso | Diode Forward Voltage ——~—«i| | | 1.6 | V | Ty=25°C,ls=-39A Ves=0VO S
ti Reverse Recovery Time ‘| ——| 100| 180 | ns | T)=25°C, k=-40A
Q; | Reverse Recovery Charge | ——| 420] 630 | nC | ailat = 100A/ys ©@
Notes:
≤ ≤
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Rg = 25 Ω , las = -3.9A. (See Figure ISD ≤ -4.0A, difdt ≤ 300A/ys, Vpp ≤ ≤
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100
VGS-15V
TOP -15V
-10V-8.0V-7.0V-6.0V
-8.0V-7.0V-6.0V
-7.0V-6.0V
-6.0V
-5.5V
-5.0V-4.5V
BOTTOM -4.5V
10
e r
1 EE) Zest
-4.5V
20µs PULSE WIDTH
T = 150JJ °CC
0.1 la vit vit |
0.1 1 10 100
-V , Drain-to-Source Voltage (V)DSDS
Fig 2. Typical Output Characteristics
2.5
IDD = -6.7A
TF
2.0 C CC
ASEANEEO ARAONED 410EEO ARAONED 410 ARAONED 410 410
1.5
4
1.0
SUREEROED? 0.5
TCECLEEECLUEECLC
VGS°120GS =140-10V -10V
0.0-60
-60 BEES -40 -20T , Junction TemperatureJJ UAEEOU 0 20 40 AERA 60 80 100 ARORA 120GS 140-10V I 160
T , Junction TemperatureJJ ( C)°VGS°120GS
D
-I , Drain-to-Source Current (A)
(Normalized)
DS(on)
R , Drain-to-Source On Resistance
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**----- Start of picture text -----**
100 TOP VGS-15V TOP VGS-15V
-10V-8.0V-7.0V-6.0V -10V-8.0V-7.0V-6.0V
-5.5V -5.5V
BOTTOM -5.0V-4.5V BOTTOM -5.0V-4.5V
10 10
S H = e r
1 a) Aaa 1 EE) Zest
-4.5V
-4.5V
20µs PULSE WIDTH 20µs PULSE WIDTH
0.1 OA WoO T = 25J °C 0.1 la vit vit T = 150JJ °CC |
0.1 1 10 100 0.1 1 10
-V , Drain-to-Source Voltage (V)DS -V , Drain-to-Source Voltage (V)DSDS
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
100 2.5
IDD = -6.7A
S=aS=S=S=a== TF
BSS SESE ES 2.0 C CC
10 PEREEEP T = 25 CJ ° Ee ASEANEEO ARAONED 410EEO ARAONED 410 ARAONED 410 410
1.5
a > 2 T = 150 CJ ° — 4
1.0
1 napaeneeel SUREEROED? 0.5
/aeaueaeee TCECLEEECLUEECLC
0.1 4 4ocnee -V , Gate-to-Source Voltage (V)5GS 6 7 eeeeee V = -50V20µs PULSE WIDTHDS8 9 10 0.0-60 BEES -40 -20T , Junction TemperatureJJ UAEEOU 0 20 40 AERA 60 80 100 ARORA ( C)°VGS°120GS =140-10V
D D
-I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A)
(Normalized)
D
-I , Drain-to-Source Current (A)
DS(on)
R , Drain-to-Source On Resistance
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800 — VCCCGSissrssoss ==== 0V,CCCgsgdds + C+ Cf = 1MHzgd ,gd C SHORTEDds 2016 re ID = -4.0 A VVVDSDSDS ===-80V-50V-20V
600 Sal | | ft sl
Ciss
emt ) «= 12 « EERE ea
Saal SaaneEpZea
400 Coss Pr ET anne
8
KONE HT pit | el
Crss
U SN HARSH
200
4
FOR TEST CIRCUIT
ETTHTRFN | ZAnn T SEE FIGURE 13
0 0
1 10 100 0 5 10 15 20 25
-V , Drain-to-Source Voltage (V)DS Q , Total Gate Charge (nC)G
C, Capacitance (pF)
GS
-V , Gate-to-Source Voltage (V)
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100 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
a _ y aul
10 rr ae T = 150 CJ ° ee248 T = 25 CJ ° 10 paar me |er 10us100us LTT
A A Ca Sh
1ms
1 | | YA | | | J[ | 1 , THe aT THT
| LAF) | | | | |
10ms
-—-tf +ff SSPHC S SE
T TCJ = 25 C= 150 C° °
0.1 eePty eetT tT ee V = 0 V GS 0.1 ee Single Pulse EEeUeeeETT]
0.2 0.8 1.4 2.0 2.6 1 10 100 1000
-V ,Source-to-Drain Voltage (V)SD -V , Drain-to-Source Voltage (V)DS
I , Drain Current (A) D-
SD
-I , Reverse Drain Current (A)
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8.0 [Ty] “ :
PEt [ty] Rp
6.0 -
eee co (mrt +
PEN G | ve
4.0 PL EEN ELE pt-10V Width ≤ 1 ys
Pit [ELS] Ne Duty Factor ≤ 0.1 %
SeeRaeeNG Fig 10a. Switching Time Test Circuit
2.0
td(on) tr td(off) tf
VGS
10%
0.0 pi tit tty aay,
25 50 75 100 125 150
T , Case TemperatureC ( C)°
90%
VDS VK
Fig 9. Maximum Drain Current Vs.
Case Temperature Fig 10b. Switching Time Waveforms
10
E D = 0.50 E ee n |
1 Ban hye m
e 0.20 rr ep
e 0.10 t
e 0.050.02 e SINGLE PULSE a ee PDM
0.1 ee 0.01 (THERMAL RESPONSE) | t1
Pa e e t2
FEE HE E EE
a ee ee eee 1. Duty factor D =Notes: t / t1 2
a a 2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)1
D
-I , Drain Current (A)
thJC
(Z )
Thermal Response
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VDS L
250
ID
TOP -1.7A
RG D.U.T 1. CTT TT -2.5A
° NER
IAS A 200 BOTTOM -3.9A
-20V DRIVER
tt tp 0.01 v Ω 150 PNGNER [ff] ESE
NaN Ree
15V 100
PJKN NINNNTfT
Fig 12a. Unclamped Inductive Test Circuit 50 P| NANASNTT
IAS
SS
0
25 50 75 100 125 150
°
S|!‘|| Pet Starting T , Junction TemperatureJ | US ( C)
Vs. Drain Current
le tp \ Fig 12c. Maximum Avalanche Energy
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG 12V .2µF
.3µF
A0V o o , pall
f QGS Q o GD ! 7 D.U.T. +-VDS
VG VGS
-3mA
vane & |
On.
IG ID
Charge Current Sampling Resistors
AS
E , Single Pulse Avalanche Energy (mJ)
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‘* + Circuit Layout Considerations
D.U.T • Low Stray Inductance
@ • Ground Plane
• Low Leakage Inductance
| | - Current Transformer
+
- - +
(0
Re • dv/dt controlled by Rg +
•
-
•
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**----- Start of picture text -----**
Driver Gate Drive
P.W.
Period D =
P.W. Period
——|
@ D.U.T. ISD Waveform
Reverse
Recovery Body Diode Forward
Current i Current di/dt a
©) D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage Body Diode Forward Drop
® Inductor Curent UW
Ripple ≤ 5%
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EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY INTERNATIONAL CN
LOT CODE 1234 RECTIFIER IRFU120 DATE CODE
ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 = 1999
IN THE ASSEMBLY LINE "A" 12 34 WEEK 16
LINE A
Note: "P" in assembly line position ASSEMBLY i a l
indicates "Lead-Free" LOT CODE
OR
PART NUMBER
INTERNATIONAL cS
RECTIFIER IRFU120 DATE CODE
LOGO TOR Poiga P = DESIGNATES LEAD-FREE
12 34 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY e a t WEEK 16
LOT CODE
A = ASSEMBLY SITE CODE
**----- End of picture text -----**
**==> picture [244 x 143] intentionally omitted <==**
**----- Start of picture text -----**
EXAMPLE: THIS IS AN IRFU120 PART NUMBER
INTERNATIONAL
WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 RECTIFIERLOGO 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 = 1999
IN THE ASSEMBLY LINE "A"
LINE A
Note: position indicates "Lead-Free" "P" in assembly line ASSEMBLYLOT CODE
ay
PART NUMBER
INT ERNATIONAL cS
RECTIFIER IRFU120 DAT E CODE
LOGO P = DESIGNAT ES LEAD-FREE
56 78 PRODUCT (OPTIONAL)
YEAR 9 = 1999
ASSEMBLY WEEK 19
LOT CODE A = ASSEMBLY SITE CODE
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**----- Start of picture text -----**
TR TRR TRL
-+ooeoo ol 1 eooof|
16.3 ( .641 ) 16.3 ( .641 )
15.7 ( .619 ) 15.7 ( .619 )
OI),
12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION
11.9 ( .469 ) 7.9 ( .312 )
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NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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13 INCH
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**==> picture [23 x 6] intentionally omitted <==**
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16 mm
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NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice. International
**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
## **IMPORTANT NOTICE**
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ).
## **WARNINGS**
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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