# Power MOSFET, P Channel, 100 V, 6.6 A, 0.48 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2781134/)

**URL**: https://novapart.co/products/IRFR9120NTRLPBF/power-mosfet-p-channel-100-v-66-a-048-ohm-to-252aa
**SKU**: IRFR9120NTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3990
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-6.6A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.48ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 40W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 100V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6.6A |
| Drain Source On State Resistance | 0.48ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2781134/)

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[Parameter<br>Viarjoss | Min.|Typ.|Max.[Units] Conditions —_—_—|<br>| Drain-to-Source Breakdown Voltage | -100[——[—— | V | Ves=0V.lo=-2500A<br>∆ ∆<br>Ω<br>Rosin __| Static Drain-to-Source On-Resistance| ——- |——|048[ | Ves=-10V,[p=-39A@ |<br>Vesti) [Gate Threshold Voltage | -2.0 [—|-40| V | Vps=Vos.fo=-250NA<br>Ge | Forward Transconductance (| 1.4 |——|——| S | Vps=-S0V,Ip=-4080<br>tes [Dinter Lage Curent |=} Tao] [ieee anv ae T SS —<br>js (aa [Gate-to-Source Sour Foard tena [ —[— [100g [Yess 20<br>GQ, TotalGateChargeReverse Leakage | —— | — | -100]<br>| | Gateto-Source Charge «| «| —-||| —-| 5027 | ne—*| | Vt o s= “AOA= -80V<br>[terre tan) | [Turm-OnDelayTime———SS«|] [a [aT Sean emenoe<br>fe *([RiseTime SS SSSSC*d ——|| A14|——|J],_|| Vooto =-40= - 8 0V<br>2 Ω<br>—SSS~S~C Ω,<br>t fFalTime | |__| Row12_ See Fy. 1006 D<br>from package G<br>aH | 6mm (0.26in.) &<br>Css__| Input Capacitance ——=S~S~dCS | S| ‘ | Vers = OV S<br>| Output CapReverse Tr a nsfercitanceCapacitance|| — —~— |  11070 |——| | — | _pF|| f=Vos 1.0MHz, = -25V See Fig. 80<br>Source-Drain Ratings and Characteristics<br>[_Parameter————~|<br>D<br>Is Continuous Source Current Min.[Typ.[Max.[Units[ MOSFET Conditions symbol __—_—s<br>Isu Pulsed Source Current integral reverse G<br>Vso | Diode Forward Voltage ——~—«i| | | 1.6 | V | Ty=25°C,ls=-39A Ves=0VO S<br>ti Reverse Recovery Time ‘| ——| 100| 180 | ns | T)=25°C, k=-40A<br>Q; | Reverse Recovery Charge | ——| 420] 630 | nC | ailat = 100A/ys ©@<br>Notes:<br>≤   ≤<br>**----- End of picture text -----**<br>


Rg = 25 Ω , las = -3.9A. (See Figure ISD ≤ -4.0A, difdt ≤ 300A/ys, Vpp ≤ ≤ 

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 100<br>VGS-15V<br>TOP -15V<br>-10V-8.0V-7.0V-6.0V<br>-8.0V-7.0V-6.0V<br>-7.0V-6.0V<br>-6.0V<br>-5.5V<br>-5.0V-4.5V<br>BOTTOM -4.5V<br> 10<br> e r<br> 1 EE) Zest<br>-4.5V<br>20µs PULSE WIDTH<br>T  = 150JJ °CC<br>0.1 la vit vit |<br>0.1  1  10  100<br>-V     , Drain-to-Source Voltage (V)DSDS<br>Fig 2. Typical Output Characteristics<br>2.5<br>IDD = -6.7A<br>TF<br>2.0 C CC<br>ASEANEEO ARAONED 410EEO ARAONED 410 ARAONED 410 410<br>1.5<br>4<br>1.0<br>SUREEROED? <d0R00NNEEUN<br>0.5<br>TCECLEEECLUEECLC<br>VGS°120GS =140-10V -10V<br>0.0-60<br>-60 BEES -40 -20T  , Junction TemperatureJJ UAEEOU 0 20 40  AERA 60 80 100  ARORA 120GS 140-10V I 160<br>T  , Junction TemperatureJJ (  C)°VGS°120GS<br>D<br>-I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 100 TOP VGS-15V TOP VGS-15V<br>-10V-8.0V-7.0V-6.0V -10V-8.0V-7.0V-6.0V<br>-5.5V -5.5V<br>BOTTOM -5.0V-4.5V BOTTOM -5.0V-4.5V<br> 10  10<br>S H =  e r<br> 1 a) Aaa  1 EE) Zest<br>-4.5V<br>-4.5V<br>20µs PULSE WIDTH 20µs PULSE WIDTH<br>0.1 OA WoO T  = 25J °C 0.1 la vit vit T  = 150JJ °CC |<br>0.1  1  10  100 0.1  1  10<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DSDS<br>Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br> 100 2.5<br>IDD = -6.7A<br>S=aS=S=S=a== TF<br>BSS SESE ES 2.0 C CC<br> 10 PEREEEP T  = 25  CJ ° Ee ASEANEEO ARAONED 410EEO ARAONED 410 ARAONED 410 410<br>1.5<br>a > 2 T  = 150  CJ ° — 4<br>1.0<br> 1 napaeneeel SUREEROED? <d0R00NNEEUN<br>0.5<br>/aeaueaeee TCECLEEECLUEECLC<br>0.1 4 4ocnee -V     , Gate-to-Source Voltage (V)5GS 6 7 eeeeee V      = -50V20µs PULSE WIDTHDS8 9 10 0.0-60 BEES -40 -20T  , Junction TemperatureJJ UAEEOU 0 20 40  AERA 60 80 100  ARORA (  C)°VGS°120GS =140-10V<br>D D<br>-I   ,  Drain-to-Source Current (A) -I   ,  Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   ,  Drain-to-Source Current (A)<br>DS(on)<br>R            , Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


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 100  100<br>OPERATION IN THIS AREA LIMITED<br>BY R<br>DS(on)<br>a _ y aul<br> 10 rr ae T  = 150  CJ ° ee248 T  = 25  CJ °  10 paar me |er 10us100us LTT<br>A A Ca Sh<br>1ms<br> 1 | | YA | | | J[ |  1 , THe aT THT<br>| LAF) | | | | |<br>10ms<br>-—-tf +ff SSPHC S SE<br> T TCJ = 25  C= 150  C° °<br>0.1 eePty eetT tT ee V      = 0 V GS 0.1 ee  Single Pulse EEeUeeeETT]<br>0.2 0.8 1.4 2.0 2.6  1  10  100  1000<br>-V     ,Source-to-Drain Voltage (V)SD -V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A) D-<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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VDS L<br>250<br>ID<br>TOP -1.7A<br>RG D.U.T 1. CTT TT -2.5A<br>° NER<br>IAS A 200 BOTTOM -3.9A<br>-20V DRIVER<br>tt tp 0.01 v Ω 150 PNGNER [ff]  ESE<br>NaN Ree<br>15V 100<br>PJKN NINNNTfT<br>Fig 12a. Unclamped Inductive Test Circuit 50 P| NANASNTT<br>IAS<br>SS<br>0<br>25 50 75 100 125 150<br>°<br>S|!‘|| Pet Starting T  , Junction TemperatureJ | US (  C)<br>Vs. Drain Current<br>le tp \ Fig 12c. Maximum Avalanche Energy<br>V(BR)DSS<br>Fig 12b. Unclamped Inductive Waveforms<br>Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>QG 12V .2µF<br>.3µF<br>A0V o o , pall<br>f QGS Q o GD ! 7 D.U.T. +-VDS<br>VG VGS<br>-3mA<br>vane & |<br>On.<br>IG ID<br>Charge Current Sampling Resistors<br>AS<br>E     , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


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‘* + Circuit Layout Considerations<br>D.U.T    •  Low Stray Inductance<br>@  •   Ground Plane<br> •   Low Leakage Inductance<br>| | - Current Transformer<br>+<br>- - +<br>(0<br>Re •   dv/dt controlled by Rg +<br>•<br>-<br>•<br>**----- End of picture text -----**<br>


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Driver Gate Drive<br>P.W.<br>Period D =<br>P.W. Period<br>——|<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt a<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>Re-Applied<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent UW<br>Ripple  ≤ 5%<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL CN<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY i a l<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TOR Poiga P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY e a t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART  NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 RECTIFIERLOGO 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT  CODE<br>ay<br>PART NUMBER<br>INT ERNATIONAL cS<br>RECTIFIER IRFU120 DAT E CODE<br>LOGO P =  DESIGNAT ES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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TR TRR TRL<br>-+ooeoo ol 1 eooof|<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>OI),<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>**----- End of picture text -----**<br>


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16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/04 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 



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---

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