# Power MOSFET, N Channel, 500 V, 6 A, 1.3 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725973/)

**URL**: https://novapart.co/products/IRFR825TRPBF/power-mosfet-n-channel-500-v-6-a-13-ohm-to-252aa
**SKU**: IRFR825TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.6790
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 119W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 1.3ohm |
| Gate Source Threshold Voltage Max | 5V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725973/)

PD - 96433A 

## IRFR825TRPbF 

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**----- Start of picture text -----**<br>
HEXFET ® Power MOSFET<br>**----- End of picture text -----**<br>


## **Applications** 

|**Applications**|**Applications**|||||||
|---|---|---|---|---|---|---|---|
|**Applications**<br>•|**Applications**<br>**VDSS **<br>Zero Voltage Switching SMPS|**RDS(on) typ. **||**Trrtyp.**|||**ID**|
|•|500V<br>Uninterruptible Power Supplies|1.05Ω||92ns||6.0A||
|•|Motor Control applications|||||||
|**Features and Benefits**<br>•<br>Fastbodydiodeeliminates theneedforexternal<br>diodes in ZVS applications.||||D<br>se tSs<br>G||Ss||
|•|Lower Gate charge results in simpler drive requirements.|||D-Pak||||
|•|HigherGatevoltagethresholdoffersimprovednoise|||IRFR825TRPbF||||



## **Absolute Maximum Ratings** 

||**Parameter**<br>**Max.**<br>**Units**<br>~~a~~||
|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>6.0<br>~~a~~||
|ID@ TC= 100°C Continuous Drain Current, VGS@ 10V<br>3.9<br>A<br>~~a~~<br>~~G~~|||
|IDM|Pulsed Drain Current<br>24<br>~~©~~||
|PD@TC= 25°C|Power Dissipation<br>119<br>W<br>Linear Derating Factor<br>1.0<br>W/°C<br>~~**a**~~||
|VGS<br>Gate-to-Source Voltage<br>± 20<br>V<br>dv/dt<br>Peak Diode Recovery dv/dt<br>9.9<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 150<br>TSTG<br>Storage Temperature Range<br>°C<br>Soldering Temperature, for 10 seconds<br>**Diode Characteristics**<br>300 (1.6mm from case )<br>~~a~~<br>~~a~~<br>~ ~~G~~<br>~~pf~~|||
||**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|IS|D<br>Continuous Source Current<br>MOSFET symbol<br>–––<br>–––<br>6.0||
|ISM|G<br>(Body Diode)<br>A<br>showing  the<br>Pulsed Source Current<br>integral reverse<br>–––<br>–––<br>24||
||S<br>(Body Diode)<br>p-n junction diode.||
|VSD|Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>TJ= 25°C, IS= 6.0A, VGS= 0V<br>~~a~~<br>~~OO~~||
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>–––<br>92<br>138<br>ns<br>TJ= 25°C, IF= 6.0A<br>–––<br>152<br>228<br>TJ= 125°C, di/dt = 100A/μs<br>Reverse Recovery Charge<br>–––<br>167<br>251<br>nC<br>TJ= 25°C, IS= 6.0A, VGS= 0V<br>–––<br>292<br>438<br>TJ= 125°C, di/dt = 100A/μs<br>Reverse RecoveryCurrent<br>–––<br>3.6<br>5.4<br>A<br>TJ= 25°C, IS= 6.0A, VGS= 0V<br>di/dt = 100A/μs<br>~~er~~<br>~~| |~~<br>~~®~~<br>~~ae~~<br>~~eee~~<br>~~ee~~<br>~~| |~~<br>~~®~~<br>~~ee~~|= 0V|
|ton|Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)||



> Notes ® through @ are on page 2 www.irf.com 

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12/19/12 

**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>500<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250μA<br>~~pe~~|
|ΔV(BR)DSS/ΔTJ<br>RDS(on)<br>VGS(th)|Breakdown Voltage Temp.Coefficient<br>–––<br>0.33<br>–––<br>V/°C<br>Static Drain-to-SourceOn-Resistance<br>–––<br>1.05<br>1.3<br>Ω<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS,ID= 250μA<br>Reference to 25°C,ID= 1mA<br>VGS= 10V,ID= 3.7A<br>~~pe~~<br>~~QO~~<br>~~GO~~<br>~~a~~<br>~~GO~~|
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>25<br>μA<br>–––<br>–––<br>2.0<br>mA<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>VDS= 500V, VGS= 0V<br>VDS= 400V,VGS= 0V,TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>nA<br>~~a~~<br>~~eee~~<br>~~a~~<br>~~ee~~<br>~~——~~<br>~~os os i~~<br>~~a~~<br>~~a~~||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|gfs<br>Qg<br>Qgs|Forward Transconductance<br>7.5<br>–––<br>–––<br>S<br>TotalGateCharge<br>–––<br>–––<br>34<br>Gate-to-SourceCharge<br>–––<br>–––<br>11<br>nC<br>VDS= 50V,ID= 3.7A<br>ID= 6.0A<br>VDS= 400V<br>~~GO~~<br>~~GO~~<br>~~ee~~<br>~~ee~~<br>~~es~~|
|Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss|Gate-to-Drain("Miller") Charge<br>–––<br>–––<br>14<br>Turn-On DelayTime<br>–––<br>8.5<br>–––<br>Rise Time<br>–––<br>25<br>–––<br>ns<br>Turn-Off DelayTime<br>–––<br>30<br>–––<br>Fall Time<br>–––<br>20<br>–––<br>InputCapacitance<br>–––<br>1346<br>–––<br>OutputCapacitance<br>–––<br>76<br>–––<br>VGS= 10V,See Fig.14a &14b<br>VDD= 250V<br>ID= 6.0A<br>RG=7.5Ω<br>VGS= 10V,See Fig. 15a & 15b<br>VGS= 0V<br>VDS= 25V<br>~~a~~<br>~~@~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~@~~<br>~~ee~~<br>~~ee~~<br>~~es~~|
|Crss|Reverse TransferCapacitance<br>–––<br>15<br>–––<br>ƒ= 1.0KHz,See Fig. 5<br>~~a~~|
|Coss<br>OutputCapacitance<br>–––<br>1231<br>–––<br>pF<br>Coss<br>OutputCapacitance<br>–––<br>25<br>–––<br>Cosseff.<br>EffectiveOutputCapacitance<br>–––<br>51<br>–––<br>Cosseff. (ER)<br>Effective Output Capacitance<br>(EnergyRelated)<br>**Avalanche Characteristics**<br>VGS= 0V,VDS= 0V to 400V<br>VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz<br>VGS= 0V,VDS = 400V, ƒ= 1.0MHz<br>–––<br>43<br>–––<br>~~a~~<br>~~QO~~<br>~~Cr~~<br>~~ee ae~~||
||**Parameter**<br>**Typ.**<br>**Units**<br>**Max.**|
|EAS<br>Single Pulse Avalanche Energy<br>–––<br>mJ<br>IAR<br>AvalancheCurrent<br>–––<br>A<br>EAR<br>Repetitive Avalanche Energy<br>–––<br>mJ<br>**Thermal Resistance**<br>3<br>11.9<br>178<br>~~a~~<br>~~**©**~~<br>~~GG~~<br>~~Qe~~<br>~~OO~~||
||**Parameter**<br>**Typ.**<br>**Units**<br>**Max.**|
|RθJC<br>RθJA<br>RθJA|Junction-to-Case<br>–––<br>Junction-to-Ambient(PCB Mount)<br>–––<br>°C/W<br>Junction-to-Ambient<br>–––<br>110<br>1.05<br>50<br>~~a~~<br>~~—~~<br>~~oe~~<br>~~pf~~|
|Notes:|Cosseff. is a fixed capacitance that gives the same charging timeas<br>®|
|Repetitive rating; pulse width limited by max.<br>Cosswhile VDSis rising from 0 to 80% VDSS.Cosseff.(ER) is a fixed<br>0)||
|junction temperature. (See Fig. 11)<br>capacitance that stores the same energy as Cosswhile VDSis rising||
|Starting TJ= 25°C, L = 40mH, RG= 25Ω,IAS= 3.0A.<br>from 0 to 80% VDSS.<br>@||



Starting TJ = 25°C, L = 40mH, RG = 25 Ω ,IAS = 3.0A. (See Figure 13). ISD = 6.0A, di/dt ≤ 416A/μs, VDDV(BR)DSS,TJ ≤ 150°C. Pulse width ≤ 300μs; duty cycle ≤ 2%. 

θ ©@ R When mounted on 1" square PCB (FR-4 or G-10 Material). For is measured at Tj approximately 90°C recommended footprint and soldering techniquea refer to  applocation note # AN-  994 echniques refer to application note #AN-994. 

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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>10 7.0V 10 7.0V<br>6.0V 6.0V<br>5.8V 5.8V<br>5.5V 5.5V<br>BOTTOM 5.3V BOTTOM 5.3V 5.3V<br>1 1<br>5.3V<br>0.1 0.1<br>≤ 60μs PULSE WIDTH Tj = 150°C<br>≤ 60μs PULSE WIDTH Tj = 25°C<br>0.01 To in Ch 0.01 Acoro<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 2.5<br>ID = 6.0A<br>2.2 V GS  = 10V<br>1.9<br>waa /<br>10 Pt] LL Peep<br>1.6<br>T = 150 ° C<br>J<br>Tp) OA<br>| ff 1.3 Y|<br>T = 25°C<br>J<br>1<br>1.0<br>| ff}, __| EERE AEEEee<br>V DS  = 50V 0.7<br>Pe oueR Fe ) LEAT<br>≤ 60μs PULSE WIDTH<br>0.1 ee 0.4 ALITTLE Lil<br>2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000 625<br>VGS   = 0V,       f = 1 KHZ Id = 1mA<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>10000 rss   gd  600<br>Coss   = Cds + Cgd<br>C<br>1000 iss 575<br>100 550<br>Coss<br>10 Crss 525<br>1 ery | 500 LETTE ELLE<br>1 10 100 1000 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C )<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typ. Breadown Voltage<br>Drain-to-Source Voltage vs. Temperature<br>14 100<br>ID= 6.0A<br>12<br>ttt VDS= 400V pe<br>10 VDS= 250V<br>VDS= 100V 10<br>8<br>6 S| LY) ee TJ = 150°C<br>1 T J  = 25°C<br>4 1 ff<br>o2nnnn oe<br>2<br>V GS  = 0V<br>A<br>0 0.1<br>0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2<br> QG,  Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V)<br>C, Capacitance (pF)<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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7 2.0<br>6 oN 1.8<br>5 PK LE<br>1.6<br>4 Ne<br>1.4<br>3<br>1.2<br>2<br>VGS = 10V<br>TPN 1.0<br>1<br>0 0.8<br>25 50 75 100 125 150 0 2 4 6 8 10 12<br> TC , Case Temperature (°C) ID , Drain Current (A)<br>Fig 9.   Maximum Drain Current Vs. Fig 9.   Typical Rdson Vs. Drain Current<br>Case Temperature<br>10<br>1 ih ee<br>D = 0.50<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>0.01<br>0.001 tt SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Seine il<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>) Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>ID,  Drain Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Se<br>10 0μsec<br>10<br>1msec<br>10msec<br>1<br>Tc = 25°C<br>Tj = 150°C al DC Rill<br>Single Pulse<br>0.1 aia<br>1 10 100 1000<br>VDS, Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Safe Operating Area 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>v 20V o<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K S<br>Fig 14a.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


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800<br>I<br>D<br>700<br>TOP          0.59A<br>                 1.02A<br>600<br>BOTTOM   3.0A<br>500<br>400<br>300<br>200<br>100<br>=<br>TCLS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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V(BR)DSS<br>e— tp  —><br>/<br>/ ||<br>y |\<br>IAS<br> Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>Fig 14b.    Gate Charge Waveform<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1  ys<br>≤ 0.1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
V<br>DS fN<br>90% '<br>10%<br>/\<br>VGS 1Eo1 1 1<br>+4<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


## **Fig 15a.** Switching Time Test Circuit 

## **Fig 15b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | fi V t GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (a8 •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vo p - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


**Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL CN<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>OR INTERNATIONAL co N DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE eat PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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TR TRR TRL<br>2 OOO OO i o> Oo & f<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| %<br>16 mm S|<br>**----- End of picture text -----**<br>


- NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/2012 

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9 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



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