# Power MOSFET, N Channel, 500 V, 6 A, 1.05 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2114667/)

**URL**: https://novapart.co/products/IRFR825PBF/power-mosfet-n-channel-500-v-6-a-105-ohm-to-252aa
**SKU**: IRFR825PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3270
**Stock**: 10+

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Power Dissipation | 119W |
| Transistor Mounting | Surface Mount |
| Transistor Polarity | N Channel |
| Power Dissipation Pd | 119W |
| Rds(On) Test Voltage | 10V |
| On Resistance Rds(On) | 1.05ohm |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 6A |
| Drain Source On State Resistance | 1.05ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2114667/)

PD - 96433A 

## IRFR825TRPbF 

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**----- Start of picture text -----**<br>
HEXFET ® Power MOSFET<br>**----- End of picture text -----**<br>


## **Applications** 

|**Applications**|**Applications**|||||||
|---|---|---|---|---|---|---|---|
|**Applications**<br>•|**Applications**<br>**VDSS **<br>Zero Voltage Switching SMPS|**RDS(on) typ. **||**Trrtyp.**|||**ID**|
|•|500V<br>Uninterruptible Power Supplies|1.05Ω||92ns||6.0A||
|•|Motor Control applications|||||||
|**Features and Benefits**<br>•<br>Fastbodydiodeeliminates theneedforexternal<br>diodes in ZVS applications.||||D<br>se tSs<br>G||Ss||
|•|Lower Gate charge results in simpler drive requirements.|||D-Pak||||
|•|HigherGatevoltagethresholdoffersimprovednoise|||IRFR825TRPbF||||



## **Absolute Maximum Ratings** 

||**Parameter**<br>**Max.**<br>**Units**<br>~~a~~||
|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V<br>6.0<br>~~a~~||
|ID@ TC= 100°C Continuous Drain Current, VGS@ 10V<br>3.9<br>A<br>~~a~~<br>~~G~~|||
|IDM|Pulsed Drain Current<br>24<br>~~©~~||
|PD@TC= 25°C|Power Dissipation<br>119<br>W<br>Linear Derating Factor<br>1.0<br>W/°C<br>~~**a**~~||
|VGS<br>Gate-to-Source Voltage<br>± 20<br>V<br>dv/dt<br>Peak Diode Recovery dv/dt<br>9.9<br>V/ns<br>TJ<br>Operating Junction and<br>-55  to + 150<br>TSTG<br>Storage Temperature Range<br>°C<br>Soldering Temperature, for 10 seconds<br>**Diode Characteristics**<br>300 (1.6mm from case )<br>~~a~~<br>~~a~~<br>~ ~~G~~<br>~~pf~~|||
||**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**||
|IS|D<br>Continuous Source Current<br>MOSFET symbol<br>–––<br>–––<br>6.0||
|ISM|G<br>(Body Diode)<br>A<br>showing  the<br>Pulsed Source Current<br>integral reverse<br>–––<br>–––<br>24||
||S<br>(Body Diode)<br>p-n junction diode.||
|VSD|Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>TJ= 25°C, IS= 6.0A, VGS= 0V<br>~~a~~<br>~~OO~~||
|trr<br>Qrr<br>IRRM|Reverse Recovery Time<br>–––<br>92<br>138<br>ns<br>TJ= 25°C, IF= 6.0A<br>–––<br>152<br>228<br>TJ= 125°C, di/dt = 100A/μs<br>Reverse Recovery Charge<br>–––<br>167<br>251<br>nC<br>TJ= 25°C, IS= 6.0A, VGS= 0V<br>–––<br>292<br>438<br>TJ= 125°C, di/dt = 100A/μs<br>Reverse RecoveryCurrent<br>–––<br>3.6<br>5.4<br>A<br>TJ= 25°C, IS= 6.0A, VGS= 0V<br>di/dt = 100A/μs<br>~~er~~<br>~~| |~~<br>~~®~~<br>~~ae~~<br>~~eee~~<br>~~ee~~<br>~~| |~~<br>~~®~~<br>~~ee~~|= 0V|
|ton|Forward Turn-On Time<br>Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)||



> Notes ® through @ are on page 2 www.irf.com 

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**Static @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>500<br>–––<br>–––<br>V<br>VGS= 0V,ID= 250μA<br>~~pe~~|
|ΔV(BR)DSS/ΔTJ<br>RDS(on)<br>VGS(th)|Breakdown Voltage Temp.Coefficient<br>–––<br>0.33<br>–––<br>V/°C<br>Static Drain-to-SourceOn-Resistance<br>–––<br>1.05<br>1.3<br>Ω<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>VDS= VGS,ID= 250μA<br>Reference to 25°C,ID= 1mA<br>VGS= 10V,ID= 3.7A<br>~~pe~~<br>~~QO~~<br>~~GO~~<br>~~a~~<br>~~GO~~|
|IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>25<br>μA<br>–––<br>–––<br>2.0<br>mA<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>VDS= 500V, VGS= 0V<br>VDS= 400V,VGS= 0V,TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>nA<br>~~a~~<br>~~eee~~<br>~~a~~<br>~~ee~~<br>~~——~~<br>~~os os i~~<br>~~a~~<br>~~a~~||
||**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|gfs<br>Qg<br>Qgs|Forward Transconductance<br>7.5<br>–––<br>–––<br>S<br>TotalGateCharge<br>–––<br>–––<br>34<br>Gate-to-SourceCharge<br>–––<br>–––<br>11<br>nC<br>VDS= 50V,ID= 3.7A<br>ID= 6.0A<br>VDS= 400V<br>~~GO~~<br>~~GO~~<br>~~ee~~<br>~~ee~~<br>~~es~~|
|Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss|Gate-to-Drain("Miller") Charge<br>–––<br>–––<br>14<br>Turn-On DelayTime<br>–––<br>8.5<br>–––<br>Rise Time<br>–––<br>25<br>–––<br>ns<br>Turn-Off DelayTime<br>–––<br>30<br>–––<br>Fall Time<br>–––<br>20<br>–––<br>InputCapacitance<br>–––<br>1346<br>–––<br>OutputCapacitance<br>–––<br>76<br>–––<br>VGS= 10V,See Fig.14a &14b<br>VDD= 250V<br>ID= 6.0A<br>RG=7.5Ω<br>VGS= 10V,See Fig. 15a & 15b<br>VGS= 0V<br>VDS= 25V<br>~~a~~<br>~~@~~<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~@~~<br>~~ee~~<br>~~ee~~<br>~~es~~|
|Crss|Reverse TransferCapacitance<br>–––<br>15<br>–––<br>ƒ= 1.0KHz,See Fig. 5<br>~~a~~|
|Coss<br>OutputCapacitance<br>–––<br>1231<br>–––<br>pF<br>Coss<br>OutputCapacitance<br>–––<br>25<br>–––<br>Cosseff.<br>EffectiveOutputCapacitance<br>–––<br>51<br>–––<br>Cosseff. (ER)<br>Effective Output Capacitance<br>(EnergyRelated)<br>**Avalanche Characteristics**<br>VGS= 0V,VDS= 0V to 400V<br>VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz<br>VGS= 0V,VDS = 400V, ƒ= 1.0MHz<br>–––<br>43<br>–––<br>~~a~~<br>~~QO~~<br>~~Cr~~<br>~~ee ae~~||
||**Parameter**<br>**Typ.**<br>**Units**<br>**Max.**|
|EAS<br>Single Pulse Avalanche Energy<br>–––<br>mJ<br>IAR<br>AvalancheCurrent<br>–––<br>A<br>EAR<br>Repetitive Avalanche Energy<br>–––<br>mJ<br>**Thermal Resistance**<br>3<br>11.9<br>178<br>~~a~~<br>~~**©**~~<br>~~GG~~<br>~~Qe~~<br>~~OO~~||
||**Parameter**<br>**Typ.**<br>**Units**<br>**Max.**|
|RθJC<br>RθJA<br>RθJA|Junction-to-Case<br>–––<br>Junction-to-Ambient(PCB Mount)<br>–––<br>°C/W<br>Junction-to-Ambient<br>–––<br>110<br>1.05<br>50<br>~~a~~<br>~~—~~<br>~~oe~~<br>~~pf~~|
|Notes:|Cosseff. is a fixed capacitance that gives the same charging timeas<br>®|
|Repetitive rating; pulse width limited by max.<br>Cosswhile VDSis rising from 0 to 80% VDSS.Cosseff.(ER) is a fixed<br>0)||
|junction temperature. (See Fig. 11)<br>capacitance that stores the same energy as Cosswhile VDSis rising||
|Starting TJ= 25°C, L = 40mH, RG= 25Ω,IAS= 3.0A.<br>from 0 to 80% VDSS.<br>@||



Starting TJ = 25°C, L = 40mH, RG = 25 Ω ,IAS = 3.0A. (See Figure 13). ISD = 6.0A, di/dt ≤ 416A/μs, VDDV(BR)DSS,TJ ≤ 150°C. Pulse width ≤ 300μs; duty cycle ≤ 2%. 

θ ©@ R When mounted on 1" square PCB (FR-4 or G-10 Material). For is measured at Tj approximately 90°C recommended footprint and soldering techniquea refer to  applocation note # AN-  994 echniques refer to application note #AN-994. 

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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>10 7.0V 10 7.0V<br>6.0V 6.0V<br>5.8V 5.8V<br>5.5V 5.5V<br>BOTTOM 5.3V BOTTOM 5.3V 5.3V<br>1 1<br>5.3V<br>0.1 0.1<br>≤ 60μs PULSE WIDTH Tj = 150°C<br>≤ 60μs PULSE WIDTH Tj = 25°C<br>0.01 To in Ch 0.01 Acoro<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 2.5<br>ID = 6.0A<br>2.2 V GS  = 10V<br>1.9<br>waa /<br>10 Pt] LL Peep<br>1.6<br>T = 150 ° C<br>J<br>Tp) OA<br>| ff 1.3 Y|<br>T = 25°C<br>J<br>1<br>1.0<br>| ff}, __| EERE AEEEee<br>V DS  = 50V 0.7<br>Pe oueR Fe ) LEAT<br>≤ 60μs PULSE WIDTH<br>0.1 ee 0.4 ALITTLE Lil<br>2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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100000 625<br>VGS   = 0V,       f = 1 KHZ Id = 1mA<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>C  = C<br>10000 rss   gd  600<br>Coss   = Cds + Cgd<br>C<br>1000 iss 575<br>100 550<br>Coss<br>10 Crss 525<br>1 ery | 500 LETTE ELLE<br>1 10 100 1000 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C )<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typ. Breadown Voltage<br>Drain-to-Source Voltage vs. Temperature<br>14 100<br>ID= 6.0A<br>12<br>ttt VDS= 400V pe<br>10 VDS= 250V<br>VDS= 100V 10<br>8<br>6 S| LY) ee TJ = 150°C<br>1 T J  = 25°C<br>4 1 ff<br>o2nnnn oe<br>2<br>V GS  = 0V<br>A<br>0 0.1<br>0 5 10 15 20 25 30 0.2 0.4 0.6 0.8 1.0 1.2<br> QG,  Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V)<br>C, Capacitance (pF)<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


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7 2.0<br>6 oN 1.8<br>5 PK LE<br>1.6<br>4 Ne<br>1.4<br>3<br>1.2<br>2<br>VGS = 10V<br>TPN 1.0<br>1<br>0 0.8<br>25 50 75 100 125 150 0 2 4 6 8 10 12<br> TC , Case Temperature (°C) ID , Drain Current (A)<br>Fig 9.   Maximum Drain Current Vs. Fig 9.   Typical Rdson Vs. Drain Current<br>Case Temperature<br>10<br>1 ih ee<br>D = 0.50<br>0.20<br>0.1 0.10<br>0.05<br>0.02<br>0.01<br>0.01<br>0.001 tt SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Seine il<br>0.0001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>) Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>ID,  Drain Current (A)<br>Thermal Response ( Z thJC ) °C/W<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>Se<br>10 0μsec<br>10<br>1msec<br>10msec<br>1<br>Tc = 25°C<br>Tj = 150°C al DC Rill<br>Single Pulse<br>0.1 aia<br>1 10 100 1000<br>VDS, Drain-toSource Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 12.** Maximum Safe Operating Area 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>v 20V o<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K S<br>Fig 14a.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


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800<br>I<br>D<br>700<br>TOP          0.59A<br>                 1.02A<br>600<br>BOTTOM   3.0A<br>500<br>400<br>300<br>200<br>100<br>=<br>TCLS<br>0<br>25 50 75 100 125 150<br>Starting TJ , Junction Temperature (°C)<br>EAS , Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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V(BR)DSS<br>e— tp  —><br>/<br>/ ||<br>y |\<br>IAS<br> Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>Fig 14b.    Gate Charge Waveform<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1  ys<br>≤ 0.1<br>**----- End of picture text -----**<br>


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V<br>DS fN<br>90% '<br>10%<br>/\<br>VGS 1Eo1 1 1<br>+4<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


## **Fig 15a.** Switching Time Test Circuit 

## **Fig 15b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | fi V t GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (a8 •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vo p - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


**Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL CN<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>OR INTERNATIONAL co N DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE eat PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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TR TRR TRL<br>2 OOO OO i o> Oo & f<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| %<br>16 mm S|<br>**----- End of picture text -----**<br>


- NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 12/2012 

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