# Power MOSFET, N Channel, 500 V, 3.6 A, 2.2 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2114666/)

**URL**: https://novapart.co/products/IRFR812PBF/power-mosfet-n-channel-500-v-36-a-22-ohm-to-252aa
**SKU**: IRFR812PBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4920
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.85ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Powe

## Specifications

| Parameter | Value |
|---|---|
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 78W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 500V |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 3.6A |
| Drain Source On State Resistance | 2.2ohm |
| Gate Source Threshold Voltage Max | 3V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2114666/)

PD -97773 

## IRFR812TRPbF 

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HEXFET ® Power MOSFET<br>VDSS RDS(on) typ. [Trr ][typ.] ID<br>500V 1.85 Ω 75ns 3.6A<br>S.D<br>tos<br>G<br>noise D-Pak<br>IRFR812TRPbF<br>**----- End of picture text -----**<br>


## **Applications** 

- • Uninterruptible Power Supplies • Motor Control applications **Features and Benefits** • Fast body diode eliminates the need for external diodes in ZVS applications. 

- • Lower Gate charge results in simpler drive • 

## **Absolute Maximum Ratings** 

||||**Parameter**<br>**Max.**<br>**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>ID@ TC= 100°C Continuous Drain Current<br>IDM<br>PD@TC= 25°C<br>VGS<br>dv/dt<br>TJ<br>TSTG||= 25°C<br>Continuous Drain Current,VGS@ 10V<br>3.6<br>= 100°C Continuous Drain Current,VGS@ 10V<br>2.3<br>A<br>Pulsed Drain Current<br>14.4<br>= 25°C Power Dissipation<br>78<br>W<br>Linear Derating Factor<br>0.63<br>W/°C<br>Gate-to-Source Voltage<br>± 20<br>V<br>Peak Diode Recovery dv/dt<br>32<br>V/ns<br>Operating Junction and<br>-55  to + 150<br>Storage Temperature Range<br>°C<br>Soldering Temperature, for 10 seconds<br>300 (1.6mm from case )<br>Mounting  torque,  6-32  or M3  screw<br>10lb in(1.1N m)<br>~~Pea~~<br>~~a~~<br>~~a~~<br>~~Qe~~<br>~~a~~<br>~~Qe~~<br>~~a~~<br>~~Qe~~<br>~~a~~<br>~~~  G~~<br>~~pf~~<br>~~Ge~~||
|**Diode Characteristics**||||
|**Symbol**|||**Parameter**<br>**Min. Typ. Max. Units**<br>**Conditions**<br>~~Po~~|
|IS|||D<br>Continuous Source Current<br>–––<br>–––<br>3.6<br>MOSFET symbol|
||||(Body Diode)<br>A<br>showing  the|
|ISM|||G<br>Pulsed Source Current<br>–––<br>–––<br>14.4<br>integral reverse|
||||S<br>(Body Diode)<br>p-n junction diode.|
|VSD<br>trr<br>Qrr<br>IRRM<br>ton||Diode Forward Voltage<br>–––<br>–––<br>1.2<br>V<br>TJ= 25°C, IS= 3.6A, VGS= 0V<br>Reverse Recovery Time<br>–––<br>75<br>110<br>ns<br>TJ= 25°C, IF= 3.6A<br>–––<br>94<br>140<br>TJ= 125°C,di/dt = 100A/μs<br>Reverse Recovery Charge<br>–––<br>135<br>200<br>nC<br>TJ= 25°C, IS= 3.6A, VGS= 0V<br>–––<br>220<br>330<br>TJ= 125°C,di/dt = 100A/μs<br>Reverse Recovery Current<br>–––<br>3.2<br>4.8<br>A<br>TJ= 25°C, IS= 3.6A, VGS= 0V<br>di/dt=100A/μs<br>Forward Turn-On Time<br>Intrinsic turn-on time is negligible(turn-on is dominated byLS+LD)<br>~~se~~<br>~~OG~~<br>~~ee eee~~<br>~~P|~~<br>~~| ot~~<br>~~®~~<br>~~Oe~~<br>~~eee eee~~<br>~~|~~<br>~~|~~<br>~~ft~~<br>~~®~~<br>~~a~~<br>~~a~~||
|Notes|through<br>®|through<br>are on page 2<br>@||
|www.irf.com<br>1||||



4/10/12 

**Static @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|---|---|
|V(BR)DSS<br>ΔV(BR)DSS/ΔTJ<br>RDS(on)|Drain-to-Source Breakdown Voltage<br>500<br>–––<br>–––<br>V<br>Breakdown Voltage Temp. Coefficient<br>–––<br>0.37<br>–––<br>V/°C<br>Static Drain-to-Source On-Resistance<br>–––<br>1.85<br>2.2<br>Ω<br>VGS= 0V, ID= 250μA<br>Reference to 25°C, ID= 250μA<br>VGS= 10V, ID= 2.2A<br>~~pf~~<br>~~es~~<br>~~eG~~<br>~~ON~~<br>~~pO~~|
|VGS(th)<br>Gate Threshold Voltage<br>3.0<br>–––<br>5.0<br>V<br>IDSS<br>Drain-to-Source Leakage Current<br>–––<br>–––<br>25<br>μA<br>–––<br>–––<br>2.0<br>mA<br>IGSS<br>Gate-to-Source Forward Leakage<br>–––<br>–––<br>100<br>nA<br>Gate-to-Source Reverse Leakage<br>–––<br>–––<br>-100<br>**Dynamic @ TJ = 25°C (unless otherwise specified)**<br>VDS= VGS, ID= 250μA<br>VDS= 500V, VGS= 0V<br>VDS= 400V, VGS= 0V, TJ= 125°C<br>VGS= 20V<br>VGS= -20V<br>~~pe~~<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~os~~<br>~~es A a~~<br>~~a~~<br>~~ee~~||
|**Symbol**|**Parameter**<br>**Min.**<br>**Typ.**<br>**Max. Units**<br>**Conditions**|
|gfs<br>Qg<br>Qgs|Forward Transconductance<br>7.6<br>–––<br>–––<br>S<br>Total Gate Charge<br>–––<br>–––<br>20<br>Gate-to-Source Charge<br>–––<br>–––<br>7.3<br>nC<br>VDS= 50V, ID= 2.2A<br>ID= 3.6A<br>VDS= 400V<br>~~po~~<br>~~ee~~<br>~~ee~~<br>~~a~~|
|Qgd<br>td(on)<br>tr<br>td(off)<br>tf<br>Ciss<br>Coss|Gate-to-Drain("Miller")Charge<br>–––<br>–––<br>7.1<br>Turn-On DelayTime<br>–––<br>14<br>–––<br>Rise Time<br>–––<br>22<br>–––<br>ns<br>Turn-Off DelayTime<br>–––<br>24<br>–––<br>Fall Time<br>–––<br>17<br>–––<br>Input Capacitance<br>–––<br>810<br>–––<br>Output Capacitance<br>–––<br>47<br>–––<br>VGS= 10V, See Fig.14a &14b<br>VDD= 250V<br>ID= 3.6A<br>RG= 17Ω<br>VGS= 10V, See Fig. 15a & 15b<br>VGS= 0V<br>VDS= 25V<br>~~a~~<br>®<br>~~es~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~po~~<br>~~@~~<br>~~es~~<br>~~ee~~<br>~~a~~|
|Crss<br>Coss<br>Coss<br>Cosseff.<br>Cosseff. (ER)|Reverse Transfer Capacitance<br>–––<br>7.3<br>–––<br>Output Capacitance<br>–––<br>610<br>–––<br>pF<br>VGS= 0V, VDS= 1.0V, ƒ = 1.0MHz<br>Output Capacitance<br>–––<br>16<br>–––<br>VGS= 0V, VDS= 400V, ƒ = 1.0MHz<br>Effective Output Capacitance<br>–––<br>5.9<br>–––<br>Effective Output Capacitance<br>–––<br>37<br>–––<br>ƒ= 1.0MHz, See Fig. 5<br>VGS= 0V,VDS= 0V to 400V<br>~~a~~<br>~~GOO~~s<br>~~a~~<br>~~ee~~<br>~~ee~~<br>9|
||(Energy Related)|
|**Avalanche Characteristics**||
|**Symbol**|**Parameter**<br>**Typ.**<br>**Units**<br>**Max.**|
|EAS<br>~~Single Pulse Avalanche Energy~~<br>–––<br>mJ<br>IAR<br>~~Avalanche Current~~<br>–––<br>A<br>EAR<br>~~Repetitive Avalanche Energy~~<br>–––<br>mJ<br>**Thermal Resistance**<br>1.8<br>7.8<br>150<br>~~a~~<br>~~a~~<br>~~a~~<br>~~G~~||
|**Symbol**|**Parameter**<br>**Typ.**<br>**Units**<br>**Max.**|
|RθJC<br>RθJA|~~Junction-to-Case~~<br>–––<br>~~Junction-to-Ambient (PCB mount)~~<br>–––<br>°C/W<br>1.6<br>40<br>~~aed~~|
|RθJA|~~Junction-to-Ambient~~<br>–––<br>110<br>~~a~~|
|Notes:|Pulse width≤300μs; duty cycle≤2%.<br>@|



- ~~®~~ Repetitive rating; pulse width limited by ~~©~~ Coss eff. is a fixed capacitance that gives the same charging timeoss eff. is a fixed capacitance that gives the same charging time eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See Fig. 11) as Coss while VDS is rising from 0 to 80% VDSS.oss while VDS is rising from 0 to 80% VDSS.while VDS is rising from 0 to 80% VDSS.DS is rising from 0 to 80% VDSS.is rising from 0 to 80% VDSS.DSS.. ® Starting TJ = 25°C, L = 93mH, RG = 25 Ω , Coss eff.(ER) is a fixed capacitance that stores the same energyoss eff.(ER) is a fixed capacitance that stores the same energy eff.(ER) is a fixed capacitance that stores the same energy IAS = 1.8A. (See Figure 13). as Coss while VDS is rising from 0 to 80% VDSS.oss while VDS is rising from 0 to 80% VDSS. while VDS is rising from 0 to 80% VDSS.DS is rising from 0 to 80% VDSS. is rising from 0 to 80% VDSS.DSS.. 

      - ~~©~~ Coss eff. is a fixed capacitance that gives the same charging timeoss eff. is a fixed capacitance that gives the same charging time eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.oss while VDS is rising from 0 to 80% VDSS.while VDS is rising from 0 to 80% VDSS.DS is rising from 0 to 80% VDSS.is rising from 0 to 80% VDSS.DSS.. Coss eff.(ER) is a fixed capacitance that stores the same energyoss eff.(ER) is a fixed capacitance that stores the same energy eff.(ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80% VDSS.oss while VDS is rising from 0 to 80% VDSS. while VDS is rising from 0 to 80% VDSS.DS is rising from 0 to 80% VDSS. is rising from 0 to 80% VDSS.DSS.. 

   - ISD = 3.6A, di/dt ≤ 520A/μs, VDDV(BR)DSS, TJ ≤ 150°C. 

θ 

When mounted on 1" square PCB (FR-4 or G-10 Material) 

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100 100<br>VGS VGS<br>TOP           15V TOP           15V<br>10V SA ET 10V ce<br>6.2V 6.2V<br>10 5.9V 5.9V<br>5.8V PTT TT 5.8V AT<br>5.6V5.5V 10 5.6V 5.5V<br>BOTTOM 5.3V ‘ Ao BOTTOM 5.3V ae<br>——— ee ee<br>1 RE) 22s —— nll<br>5.3V<br>1<br>| Ga | Ar<br>0.1<br>cea...<br>5.3V ≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH<br>Tj = 25°C Tj = 150°C<br>0.01 a_iPTT COCOeee 0.1 HH)ft TTT ytll<br>0.1 1 10 100 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 3.0<br>VDS = 50V ID = 3.6A<br>≤ 60μs PULSE WIDTH |;——C~sSCY 2.5 V GS  = 10V 4<br>__——— yf<br>10 | | ld] CE| 2.0 /VW<br>1.5<br>T J  = 150°C<br>-— ff | ff 4 yy, 4<br>1 fF T = 25°C 1.0 LEAL  LL<br>J<br>Ay |! ua<br>eyey [/] =—| es Lert<br>ey 22 eees es ee 0.5 ra<br>0.1 pf de 0.0 PLEEEE ELL<br>4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

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650<br>Id = 250uA<br>600<br>550<br>500<br>-60 -40 -20 0 20 40 60 80 100 120 140 160<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


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100000 650<br>VGS   = 0V,       f = 1 MHZ<br>Id = 250uA<br>Ciss   = Cgs + Cgd,  Cds SHORTED<br>C  = C<br>rss   gd<br>10000<br>Coss  = Cds + Cgd<br>600<br>1000 Ciss<br>100 C<br>oss<br>550<br>C<br>10 rss<br>1 500<br>1 10 100 1000 -60 -40 -20 0 20 40 60 80 100 120 140<br>VDS, Drain-to-Source Voltage (V) TJ , Temperature ( °C )<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typ. Breadown Voltage<br>Drain-to-Source Voltage vs. Temperature<br>16 100<br>ID= 3.6A<br>V DS = 400V<br>12 V DS = 250V<br>VDS= 100V T = 150°C<br>pp Sy)~~ 10 e e ee J  eee<br>8 GO|) | ee ee Ae ey ee<br>4 1 TJ = 25°C<br>0 V GS  = 0V<br>0 foi 4 8 12 16 0.1 A aa<br>0.2 0.4 0.6 0.8 1.0<br> QG  Total Gate Charge (nC)<br>VSD, Source-to-Drain Voltage (V)<br>C, Capacitance (pF)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>VGS, Gate-to-Source Voltage (V) ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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4 3.0<br>3<br>2.5 V GS  = 20V<br>2<br>VGS = 10V<br>Sa LA<br>2.0<br>C y<br>10 LLL 1.5 —<br>25 50 75 100 125 150 0 1 2 3 4 5 6 7<br>TC , CaseTemperature (°C) ID , Drain Current (A)<br>Fig 9.   Maximum Drain Current Vs. Fig 9.   Typical Rdson Vs. Drain Current<br>Case Temperature<br>10<br>PFE EEE<br>1<br>Se D = 0.50 ee ee<br>0.20<br>0.10<br>0.1<br>"or 0.05<br>— oor 0.020.01<br>0.01 Se ea aan eeTAA eeIR EL<br>Notes:<br>SINGLE PULSE<br>1. Duty Factor D = t1/t2<br>( THERMAL RESPONSE )<br>0.001 lL | el 2. Peak Tj = P dm x Zthjc + Tc |<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>) Ω<br>RDS (on) , Drain-to-Source On Resistance (<br>ID  , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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100<br>OPERATION IN THIS AREA<br>Seamer LIMITED BY R DS(on)<br>10 ani maeriil<br>100μsec<br>1msec<br>1<br>aes REA 10msec<br>0.1<br>Tc = 25°C<br>Tj = 150°C<br>Single Pulse Co. DC<br>0.01<br>1 10 100 1000<br>VDS,  Drain-toSource Voltage (V)<br>Fig 12.   Maximum Safe Operating Area<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>z 20V ak<br>tp 0.01 Ω<br>**----- End of picture text -----**<br>


**Fig 13a.** Unclamped Inductive Test Circuit 

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L<br>VCC<br>DUT<br>0<br>1K S<br>Fig 14a.   Gate Charge Test Circuit<br>6<br>**----- End of picture text -----**<br>


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700<br>                 I<br>D<br>600 TOP          0.4A<br>                0.7A<br>BOTTOM   1.8A<br>500<br>400<br>300<br>\<br>200<br>100<br>0<br>25 50 75 100 125 150<br>Starting TJ, Junction Temperature (°C)<br>EAS, Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 13.** Maximum Avalanche Energy vs. Drain Current 

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V(BR)DSS<br>e— tp  —><br>/<br>/ ||<br>/ \<br>IAS<br> Unclamped Inductive Waveforms<br>Id<br>Vds<br>Vgs<br>Vgs(th)<br>Qgs1 Qgs2 Qgd Qgodr<br>Fig 14b.    Gate Charge Waveform<br>www.irf.com<br>**----- End of picture text -----**<br>


**Fig 13b.** Unclamped Inductive Waveforms 

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+<br>-<br>≤ 1  ys<br>≤ 0.1<br>**----- End of picture text -----**<br>


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V<br>DS fN<br>90% '<br>10%<br>/\<br>VGS 1Eo1 1 1<br>+4<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


## **Fig 15a.** Switching Time Test Circuit 

## **Fig 15b.** Switching Time Waveforms 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | fi V t GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re (a8 •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vo p - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


**Fig 16.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET ® Power MOSFETs 

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EXAMPLE: THIS IS  AN IRFR120<br>WITH ASSEMBLY INTERNATIONAL a PART NUMBER<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>= | LINE A<br>Note: "P" in assembly line positionindicates "Lead-Free" ASS EMBLYLOT CODE ial<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>OR INTERNATIONALRECTIFIER cg IRFR120 N DATE CODEP =  DESIGNATES LEAD-FREE<br>LOGO TOR F116 PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE al PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


packages are not recommended for Surface Mount Application. **Note:For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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**----- Start of picture text -----**<br>
TR TRR TRL<br>$ooooee so ) J oeoeof|<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CCE, aan<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>IX 4 k e<br>**----- End of picture text -----**<br>


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NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


**Note: For the most current drawing please refer to IR website at http://www.irf.com/package/** 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 101N Sepulveda., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 04/12 

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