# Power MOSFET, N Channel, 75 V, 87 A, 6000 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2617413/)

**URL**: https://novapart.co/products/IRFR7740TRPBF/power-mosfet-n-channel-75-v-87-a-6000-ohm-to-252aa
**SKU**: IRFR7740TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.7710
**Stock**: 1000+
**Lead Time**: 2 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (08-Jul-2021) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | StrongIRFET HEXFET |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 75V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 87A |
| Drain Source On State Resistance | 6000µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2617413/)

## International ~~TeaR Rectitier~~ 

## **Application** 

-  Brushed motor drive applications 

-  BLDC motor drive applications 

-  Battery powered circuits 

-  Half-bridge and full-bridge topologies 

-  Synchronous rectifier applications 

-  Resonant mode power supplies 

-  OR-ing and redundant power switches 

-  DC/DC and AC/DC converters 

-  DC/AC inverters 

## **Benefits** 

-  Improved  gate, avalanche and dynamic dV/dt ruggedness 

-  Fully characterized capacitance and avalanche SOA 

-  Enhanced body diode dV/dt and dI/dt capability 

-  Lead-free, RoHS compliant 

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  Strong IR FET™<br>    IRFR7740PbF<br> IRFU7740PbF<br>a<br>HEXFET [® ] Power MOSFET<br>D<br>VDSS  75V<br>RDS(on) typ. 6.0m <br>G<br>            max  7.2m <br>S ID   87A<br>NAL ==<br>D<br>S<br>S  D<br>G<br>G<br>D-Pak  I-Pak<br>IRFR7740PbF  IRFU7740PbF<br>G  D  S<br>Gate  Drain  Source<br>ee ee<br>**----- End of picture text -----**<br>


|||**Standard Pack**|**Standard Pack**||
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Form**|**Quantity**|**Orderable Part Number**|
|||Tube|75|IRFR7740PbF|
|IRFR7740PbF|D-Pak|Tape and Reel|2000|IRFR7740TRPbF|
|IRFU7740PbF|I-Pak|Tube|75|IRFU7740PbF|



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20 100<br>ID = 52A<br>80<br>15 ey fy Kt | |tf<br>60<br>10 TEE PR<br>TJ = 125°C<br>40<br>5<br>PRP<br>20<br>TJ = 25°C<br>0 0<br>tty PTET TT<br>0 5 10 15 20 25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>VGS, Gate -to -Source Voltage  (V)<br>ID,  Drain Current (A)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

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## **Absolute Maximum Rating** 

|**Absolute Maximum Rating**|||||||
|---|---|---|---|---|---|---|
|**Symbol**<br>**Parameter**|||||**Max.**|**Units**|
|ID @TC= 25°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|||||87||
|ID @TC= 100°C<br>Continuous Drain Current,VGS @10V(Silicon Limited)|||||62|A|
|IDM<br>Pulsed Drain Current|||||330||
|PD @TC= 25°C<br>Maximum Power Dissipation|||||140|W|
|Linear DeratingFactor|||||0.95|W/°C|
|VGS<br>Gate-to-Source Voltage|||||± 20|V|
|TJ<br>TSTG<br>Operating Junction and<br>Storage Temperature Range|||||-55  to + 175|°C|
|Soldering Temperature, for 10 seconds (1.6mm from case)|Soldering Temperature, for 10 seconds (1.6mm from case)||||300||
|**Avalanche Characteristics**|||||||
|**Symbol**<br>**Parameter**|||||**Max.**|**Units**|
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy |||||160|mJ|
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy|||||242||
|IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy||||See Fig 15, 16, 23a, 23b|See Fig 15, 16, 23a, 23b|A<br>mJ|
|**Thermal Resistance**|||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>1.05<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount) <br>–––<br>50<br>RJA<br>Junction-to-Ambient<br>–––<br>110<br>**Static @ TJ = 25°C (unless otherwise specified)**<br>~~—————~~<br>~~a~~|||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**<br>**Conditions**|||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|75|–––|–––|V|VGS= 0V,ID= 250µA||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|51|––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C,ID= 1mA|||
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––|6.0|7.2|mVGS= 10V,ID= 52A|||
||–––|7.0|–––|VGS=6.0V,ID= 26A|||
|VGS(th)<br>GateThresholdVoltage|2.1|–––|3.7|V|VDS= VGS,ID= 100µA||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|1.0<br>150|µA|µA<br>VDS =75 V, VGS =0V<br>VDS=75V,VGS=0V,TJ=125°C||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage|–––<br>–––|–––<br>–––|100<br>-100|nA|nA<br>VGS= 20V<br>VGS = -20V||
|RG<br>Gate Resistance|–––|2.2|–––||||



## **Notes:** 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 52A, VGS =10V. 

-  ISD  52A, di/dt  570A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V 

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**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~a~~|**Typ. **<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>**Conditions**<br>~~a~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~|110<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|S<br>~~a~~|VDS= 25V,ID= 52A<br>~~a~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|84<br>~~a~~<br>~~a~~|126<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|ID= 52A<br>VDS= 38V<br>VGS= 10V<br>~~a~~<br>~~a~~|
|Qgs|Gate-to-Source Charge|–––|20|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|26<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|Qsync<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|58<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime|–––|10|–––|ns|VDD= 38V<br>ID= 52A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~ee~~<br>~~a~~|Rise Time<br>|–––<br>|36<br>|–––<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>|–––<br>|55<br>|–––<br>|||
|tf<br>~~So~~<br>~~ee~~|Fall Time<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|30<br>~~So~~|–––<br>~~So~~|||
|Ciss<br>~~So~~<br>~~ee~~|Input Capacitance<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|4430<br>~~So~~|–––<br>~~So~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|370|–––|||
|Crss<br>~~ee~~<br>~~PR~~|Reverse Transfer Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>|230<br>|–––<br>|||
|Coss eff.(ER)<br>~~ee~~<br>~~PR~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~<br>|–––<br>~~ee~~<br>|340<br>|–––<br>||VGS= 0V, VDS= 0V to 60V<br>~~ee~~|
|Coss eff.(TR)<br>~~PRa~~|Output Capacitance(Time Related)<br>~~a~~|–––<br>~~a~~|440<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS= 0V to 60V|
|**Diode Characteristics**<br>~~GO~~|||||||
|**Symbol**<br>~~eG~~|**Parameter **<br>~~eG~~|**Min.**<br>~~eG~~<br>~~GO~~|**Typ. **<br>~~eG~~<br>~~GO~~|**Max.**<br>~~eG~~<br>~~GO~~|**Units**<br>~~eG~~<br>~~GO~~|**Conditions**<br>~~eG~~|
|IS<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|87<br>~~GO~~<br>~~fp~~|A<br>~~GO~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|330<br>~~fp~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 52A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|12<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|V/ns T<br>~~a~~<br>~~a~~|V/ns TJ= 175°C,IS= 52A,VDS= 75V<br>~~a~~<br>~~a~~|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|35<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 64V<br>TJ =125°CIF= 52A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|40<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|45<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|61<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~eee~~<br>~~ee~~|Reverse Recovery Current<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|2.3<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~||



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 100 5.0V 4.5V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>10 10<br>60µs PULSE WIDTH 60µs PULSE WIDTH<br>Tj = 25°C Tj = 175°C<br>1 1 el<br>di Ae<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 3.0<br>ID = 52A<br>2.5 V GS  = 10V<br>100<br>TA4 2.0 Lae Y<br>T J  = 175°C<br>10 1.5<br>TJ = 25°C<br>A 1.0 HE<br>1<br>ffi 0.5 CCT LEE<br>VDS = 25V<br>60µs PULSE WIDTH<br>0.1 Aft 0.0 PEELEEh<br>2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VCGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  C ds SHORTED ID= 52A<br>C rss    = C gd  12.0<br>Coss   = Cds + Cgd 10.0 V DS = 60V<br>10000 _ py VDS= 38V<br>Ciss 8.0 V DS = 15V<br>fy<br>PPTa [TT] eee 6.0 - Sf<br>1000 Coss<br>QT Crss 4.0 EA<br>2.0<br>100 : Hii(IPRaseee 0.0 An7<br>1 10 100 0 20 40 60 80 100 120<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID, Drain-to-Source Current (A)<br>ID, Drain-to-Source Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Output Characteristics 

**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 8.** Typical Gate Charge vs. 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

Gate-to-Source Voltage 

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## ~~LeaR~~ 

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1000<br>100<br>TJ = 175°C<br>Te<br>10<br>TJ = 25°C<br>1 aeff<br>V GS  = 0V<br>0.1<br>0.2 (oinne 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD, Source-to-Drain Voltage (V)<br>Fig 9.   Typical Source-Drain Diode Forward Voltage<br>95<br>Id = 1.0mA<br>90<br>PPPOEDE<br>85 TLE<br>80 Wasi<br>ATCT<br>75<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>ISD, Reverse Drain Current (A)<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

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100µsec<br>100 1m sec<br>Ee<br>10 OPERATION<br>IN THIS<br>AREA<br>LIMITED BY<br>1 RDS(on)<br>10msec<br>0.1<br>Tc = 25°C DC<br>Tj = 175°C<br>Single Pulse<br>0.01<br>0.1 1 10<br>ii<br>VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0<br>-10 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


**Fig 12.** Typical Coss Stored Energy 

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11.0<br>VGS = 5.5V<br>VGS = 6.0V<br>10.0 VGS = 7.0V<br>VGS = 8.0V<br>VGS =10V<br>9.0 AES +f|<br>8.0 ALLY<br>7.0 LY<br>|<br>6.0 a<br>0 50 100 150 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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10<br>1<br>D = 0.50 SE ae<br>0.20<br>0.1 0.10<br>= 0.05<br>0.02<br>0.01 a MU 0.01<br>SINGLE PULSE Notes:<br>( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2<br>Bi 2. Peak Tj = P dm x Zthjc + Tc<br>0.001 siee<br>1E-006 1E-005 0.0001 0.001 0.01 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>Tstart = 25°C (Single Pulse)<br>saiieelll oe<br>10<br>aa Se<br>Allowed avalanche Current vs avalanche<br>1 -BEESST pulsewidth, tav, assuming  Tstart = 150°C. ta j = 25 LA °C and  MTCo<br>0.1 aUHH EEO Ga an<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>200<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>160 I D  = 52A 1.Avalanche failures assumption:<br>Purely a thermal phenomenon and failure occurs at a<br>tp<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>part type.<br>120 2. Safe operation in Avalanche is allowed as long asTjmax is not<br>   exceeded.<br>TTT<br>3. Equation below based on circuit and waveforms shown in Figures<br>80     23a, 23b.<br>4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>SSETTIT 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>40 6. Iav = Allowable avalanche current.<br>CUSNITT 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 15, 16).<br>CT TNS<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tavthJC(D, tav(D, tavav) = Transient thermal resistance, see Figures 13)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com)** 

   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). 

   - ZthJC(D, tavthJC(D, tav(D, tavav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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4.0<br>3.5<br>TRIO<br>3.0<br>2.5<br>ID = 100µA SUT<br>ID = 250µA<br>2.0<br>I D  = 1.0mA<br>BaSNUE<br>ID = 1.0A<br>1.5<br>BEEN<br>1.0 BanEAN<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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16<br>IF = 35A<br>VR = 64V<br>12 T J = 25°C TT<br>TJ = 125°C<br>8 Eze<br>Evaan<br>4<br>+<br>Lane<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
20<br>IF = 52A<br>VR = 64V<br>16 et |<br>TJ = 25°C<br>TJ = 125°C<br>12<br>TE<br>are<br>8<br>Deaee<br>4<br>1<br>0 Lae<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
300<br>IF = 35A<br>250 V R = 64V<br>| fe<br>TJ = 25°C<br>200 T J = 125°C<br>re<br>150<br>“ay<br>100<br>A<br>50 EF TIT<br>0 eT LL<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
300<br>IF = 52A<br>250 V R = 64V Te<br>TJ = 25°C<br>200 T J = 125°C TA<br>nea<br>150<br>100 nea<br>eT<br>50<br>“Eerie<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 5, 2014 ~~a~~ 

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**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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**----- Start of picture text -----**<br>
15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th) !<br>A | !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

8 www.irf.com © 2014 International Rectifier 

Submit Datasheet Feedback                   November 5, 2014 

IRFR/U7740PbF ~~LT~~ 

## ~~LR~~ 

## **D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D-Pak (TO-252AA) Part Marking Information** 

**==> picture [401 x 212] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>ial<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL<br>OR DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO<br>PRODUCT (OPTIONAL)<br>12 34<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT QUALIFIED TO THE<br>ASSEMBLY<br>LOT CODE CONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 5, 2014 ~~°°”. = —™..~~ 

IRFR/U7740PbF ~~LT~~ 

## ~~IvaR~~ 

## **I-Pak (TO-251AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **I-Pak (TO-251AA) Part Marking Information** 

**==> picture [352 x 204] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001<br>56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 ~~=~~ www.irf.com        © 2014 International Rectifier Submit Datasheet Feedback                   November 5, 2014 ~~°°°;”©...™—™.~~ 

~~TOR~~ 

IRFR/U7740PbF ~~_~~ 

## **D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [392 x 100] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

**==> picture [260 x 95] intentionally omitted <==**

**----- Start of picture text -----**<br>
  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

11 www.irf.com        © 2014 International Rectifier Submit Datasheet Feedback                   November 5, 2014 ~~a~~ 

~~I6aR~~ 

IRFR/U7740PbF ~~[TT~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D-Pak|MSL1|
||I-Pak||
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|**Comment**|
|---|---|
|11/5/2014|Updated EAS (L =1mH)= 242mJ  on page 2<br>Updated note 9  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 22A, VGS=10V” on page 2|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 

12 ~~_~~ 

12 www.irf.com        © 2014 International Rectifier Submit Datasheet Feedback                   November 5, 2014 ~~L _~~ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR7740TRPBF/power-mosfet-n-channel-75-v-87-a-6000-ohm-to-252aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr7740trpbf/mosfet-n-ch-75v-87a-to-252aa-3/dp/2617413)
---

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