# Power MOSFET, N Channel, 60 V, 56 A, 7900 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2456720/)

**URL**: https://novapart.co/products/IRFR7546TRPBF/power-mosfet-n-channel-60-v-56-a-7900-ohm-to-252aa
**SKU**: IRFR7546TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.2950
**Stock**: 1000+
**Lead Time**: 106 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V;

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | - |
| Qualification | - |
| Power Dissipation | 99W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 60V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 56A |
| Drain Source On State Resistance | 7900µohm |
| Gate Source Threshold Voltage Max | 3.7V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2456720/)

## International 

## Strong _IR_ FET™ IRFR7546PbF IRFU7546PbF 

**Application** HEXFET[® ] Power MOSFET  Brushed motor drive applications BLDC motor drive applications D **VDSS 60V**  Battery powered circuits **RDS(on) typ. 6.6m**   Half-bridge and full-bridge topologies **max 7.9m**   Synchronous rectifier applications G  Resonant mode power supplies ~~NAL~~ **ID (Silicon Limited) 71A**   OR-ing and redundant power switches ~~c=~~ S **ID (Package Limited) 56A** 

-  DC/DC and AC/DC converters 

-  DC/AC inverters 

## **Benefits** 

-  Improved  gate, avalanche and dynamic dV/dt ruggedness 

-  Fully characterized capacitance and avalanche SOA 

-  Enhanced body diode dV/dt and dI/dt capability 

-  Lead-free, RoHS compliant 

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D<br>S<br>S  D<br>G<br>G<br>D-Pak  I-Pak<br>IRFR7546PbF  IRFU7546PbF<br>G  D  S<br>Gate  Drain  Source<br>ee ee<br>**----- End of picture text -----**<br>


|||**Standard Pack**|**Standard Pack**||
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Form**|**Quantity**|**Orderable Part Number**|
|||Tube|75|IRFR7546PbF|
|IRFR7546PbF|D-Pak|Tape and Reel|2000|IRFR7546TRPbF|
|IRFU7546PbF|I-Pak|Tube|75|IRFU7546PbF|



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20<br>ID = 43A<br>15<br>TJ = 125°C<br>10<br>5<br>TJ = 25°C<br>0<br>4 6 8 10 12 14 16 18 20<br>VGS, Gate -to -Source Voltage  (V)<br>)<br> <br>RDS(on),  Drain-to -Source On Resistance (m<br>**----- End of picture text -----**<br>


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80<br>Limited by package<br>60<br>TE<br>40<br>PEEPS|<br>PLTIN<br>20<br>ERRREK<br>0<br>25 50 75 100 125 150 175<br> TC , Case Temperature (°C)<br>ID,  Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 1.** Typical On-Resistance vs. Gate Voltage 

**Fig 2.** Maximum Drain Current vs. Case Temperature 

1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback                   November 7, 2014 ~~a~~ 

IRFR/U7546PbF 

## **Absolute Maximum Rating** 

|**Symbol**|**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID @TC= 25°C|Continuous Drain Current,VGS @10V(Silicon Limited)|71|A|
|ID @TC= 100°C|Continuous Drain Current,VGS @10V(Silicon Limited)|50||
|ID @TC= 25°C|Continuous Drain Current, VGS @10V(Package Limited)|56||
|IDM|Pulsed Drain Current|280||
|PD @TC= 25°C|Maximum Power Dissipation|99|W|
||Linear DeratingFactor|0.66|W/°C|
|VGS|Gate-to-Source Voltage|± 20|V|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range|-55  to + 175|°C|
||SolderingTemperature,for 10 seconds (1.6mm fromcase)|300||



## **Avalanche Characteristics** 

|**Symbol**<br>**Parameter**|||||**Max.**|**Units**|
|---|---|---|---|---|---|---|
|EAS (Thermally limited)<br>SinglePulseAvalancheEnergy |||||120|mJ|
|EAS (Thermally limited)<br>Single Pulse Avalanche Energy|||||178||
|IAR<br>Avalanche Current<br>EAR<br>Repetitive Avalanche Energy||||See Fig 15, 16, 23a, 23b|See Fig 15, 16, 23a, 23b|A<br>mJ|
|**Thermal Resistance**|||||||
|**Symbol**<br>**Parameter**<br>**Typ.**<br>**Max.**<br>**Units**<br>RJC<br>Junction-to-Case<br>–––<br>1.52<br>°C/W<br>RJA<br>Junction-to-Ambient(PCB Mount) <br>–––<br>50<br>RJA<br>Junction-to-Ambient<br>–––<br>110<br>**Static @ TJ = 25°C (unless otherwise specified)**<br>~~—————~~<br>~~a~~|||||||
|**Symbol**<br>**Parameter**|**Min.**|**Typ. Max. Units**|**Typ. Max. Units**|**Typ. Max. Units**<br>**Conditions**|||
|V(BR)DSS<br>Drain-to-Source Breakdown Voltage|60|–––|–––|V|VGS= 0V,ID= 250µA||
|V(BR)DSS/TJBreakdown Voltage Temp. Coefficient|–––|47|––– mV/°C Reference to 25°C|––– mV/°C Reference to 25°C,ID= 1mA|||
|RDS(on)<br>Static Drain-to-Source On-Resistance|–––|6.6|7.9|mVGS= 10V,ID= 43A|||
||–––|8.5|–––|VGS= 6.0V,ID= 21A|||
|VGS(th)<br>GateThresholdVoltage|2.1|–––|3.7|V|VDS= VGS,ID= 100µA||
|IDSS<br>Drain-to-Source Leakage Current|–––<br>–––|–––<br>–––|1.0<br>150|µA|µA<br>VDS =60V, VGS =0V<br>VDS=60V,VGS=0V,TJ=125°C||
|IGSS<br>Gate-to-Source Forward Leakage<br>Gate-to-Source Reverse Leakage|–––<br>–––|–––<br>–––|100<br>-100|nA|nA<br>VGS= 20V<br>VGS = -20V||
|RG<br>Gate Resistance|–––|1.5|–––||||



## **Notes:** 

- Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) 

-  Repetitive rating; pulse width limited by max. junction temperature. 

-   Limited by TJmax, starting TJ = 25°C, L = 130µH, RG = 50, IAS = 43A, VGS =10V. 

-  ISD  43A, di/dt  1020A/µs, VDD  V(BR)DSS, TJ 175°C. 

-  Pulse width  400µs; duty cycle  2%. 

- Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 

- Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. 

- R is measured at TJ approximately 90°C. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 

- Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 19A, VGS =10V. 

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**Dynamic  Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Min.**<br>~~a~~|**Typ. **<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>~~a~~|**Max. Units**<br>**Conditions**<br>~~a~~|
|---|---|---|---|---|---|---|
|gfs<br>~~a~~|Forward Transconductance<br>~~a~~|56<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|S<br>~~a~~|VDS= 25V,ID= 43A<br>~~a~~|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|58<br>~~a~~<br>~~a~~|87<br>~~a~~<br>~~a~~|nC<br>~~a~~<br>~~a~~|ID= 43A<br>VDS= 30V<br>VGS= 10V<br>~~a~~<br>~~a~~|
|Qgs|Gate-to-Source Charge|–––|14|–––|||
|Qgd<br>~~a~~|Gate-to-Drain Charge<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|18<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|||
|Qsync<br>~~a~~<br>~~a~~<br>~~ee~~|Total Gate Charge Sync.(Qg–Qgd)<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|26<br>~~a~~<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~<br>~~a~~|||
|td(on)<br>~~ee~~|Turn-On DelayTime|–––|8.1|–––|ns|VDD= 30V<br>ID= 43A<br>RG= 2.7<br>VGS= 10V<br>~~ee~~|
|tr<br>~~ee~~<br>~~a~~|Rise Time<br>|–––<br>|28<br>|–––<br>|||
|td(off)<br>~~a~~|Turn-Off DelayTime<br>|–––<br>|36<br>|–––<br>|||
|tf<br>~~So~~<br>~~ee~~|Fall Time<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|20<br>~~So~~|–––<br>~~So~~|||
|Ciss<br>~~So~~<br>~~ee~~|Input Capacitance<br>~~So~~<br>~~ee~~|–––<br>~~So~~<br>~~ee~~|3020<br>~~So~~|–––<br>~~So~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz,  See Fig.7<br>~~ee~~|
|Coss<br>~~ee~~|Output Capacitance<br>~~ee~~|–––<br>~~ee~~|280|–––|||
|Crss<br>~~ee~~<br>~~PR~~|Reverse Transfer Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>|180<br>|–––<br>|||
|Coss eff.(ER)<br>~~ee~~<br>~~PR~~|Effective Output Capacitance<br>(Energy Related)<br>~~ee~~<br>|–––<br>~~ee~~<br>|290<br>|–––<br>||VGS= 0V, VDS= 0V to 48V<br>~~ee~~|
|Coss eff.(TR)<br>~~PRa~~|Output Capacitance(Time Related)<br>~~a~~|–––<br>~~a~~|370<br>~~a~~|–––<br>~~a~~||VGS= 0V,VDS= 0V to 48V|
|**Diode Characteristics**<br>~~GO~~|||||||
|**Symbol**<br>~~eG~~|**Parameter **<br>~~eG~~|**Min.**<br>~~eG~~<br>~~GO~~|**Typ. **<br>~~eG~~<br>~~GO~~|**Max.**<br>~~eG~~<br>~~GO~~|**Units**<br>~~eG~~<br>~~GO~~|**Conditions**<br>~~eG~~|
|IS<br>~~fp~~|Continuous Source Current<br>(BodyDiode)<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|–––<br>~~GO~~<br>~~fp~~|71<br>~~GO~~<br>~~fp~~|A<br>~~GO~~<br>~~fp~~|MOSFET symbol<br>showing  the<br>integral reverse<br>p-n junction diode.<br>D<br>S<br>G<br>~~fp~~|
|ISM<br>~~fp~~|Pulsed Source Current<br>(Body Diode)<br>~~fp~~|–––<br>~~fp~~|–––<br>~~fp~~|280<br>~~fp~~|||
|VSD<br>~~a~~|Diode Forward Voltage<br>~~a~~|–––<br>~~a~~|–––<br>~~a~~|1.2<br>~~a~~|V<br>~~a~~|TJ= 25°C,IS= 43A,VGS= 0V<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|12<br>~~a~~<br>~~a~~|–––<br>~~a~~<br>~~a~~|V/ns T<br>~~a~~<br>~~a~~|V/ns TJ= 175°C,IS= 43A,VDS= 60V<br>~~a~~<br>~~a~~|
|trr<br>~~ee~~|Reverse Recovery Time<br>~~ee~~|–––<br>~~ee~~|26<br>~~ee~~|–––<br>~~ee~~|ns<br>~~ee~~|TJ =25°CVDD= 51V<br>TJ =125°CIF= 43A,<br>TJ =25°Cdi/dt = 100A/µs<br>TJ =125°C <br>TJ= 25°C|
|||–––<br>~~ee~~|29<br>~~ee~~|–––<br>~~ee~~|||
|Qrr<br>~~ee~~<br>~~eee~~|Reverse Recovery Charge<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|22<br>~~ee~~<br>~~eee~~|–––<br>~~ee~~<br>~~eee~~|nC<br>~~ee~~<br>~~eee~~||
|||–––<br>~~eee~~|30<br>~~eee~~|–––<br>~~eee~~|||
|IRRM<br>~~eee~~<br>~~ee~~|Reverse Recovery Current<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|1.5<br>~~eee~~<br>~~ee~~|–––<br>~~eee~~<br>~~ee~~|A<br>~~eee~~<br>~~ee~~||



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V 8.0V<br>7.0V 7.0V<br>6.0V 6.0V<br>5.5V 5.5V<br>100 5.0V 100 5.0V<br>BOTTOM 4.5V BOTTOM 4.5V<br>4.5V<br>10 10 A<br>4.5V<br>60µs PULSE WIDTH<br>60µs PULSE WIDTH<br>Tj = 175°C<br>Tj = 25°C<br>1 1 AD<br>tit tt<br>0.1 1 10 100 0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 3.   Typical Output Characteristics  Fig 4.   Typical Output Characteristics<br>1000 2.5<br>ID = 43A<br>VGS = 10V<br>100 2.0<br>EEEP=e | LY<br>T J  = 175°C<br>10 1.5<br>| VL TJ = 25°C AE<br>1 1.0<br>Ve VDS = 25V HI<br>60µs PULSE WIDTH<br>0.1 Pla 0.5 LLL<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Junction Temperature (°C)<br>VGS, Gate-to-Source Voltage (V)<br>Fig 5.   Typical Transfer Characteristics  Fig 6.   Normalized On-Resistance vs. Temperature<br>100000 14.0<br>VCGS  iss   = C= 0V,       f gs + Cgd= 1 MHZ,  C ds SHORTED ID= 43A<br>C rss    = C gd  12.0<br>Coss   = Cds + Cgd 10.0 VDS= 48V<br>10000 | Foy VDS= 30V<br>8.0 V DS = 12V<br>Ciss<br>6.0<br>1000 Coss 4.0<br>chime) =|  ELLA<br>Crss<br>2.0<br>100 ~ lisse:Till 0.0 Vanna7EEL<br>1 10 100 0 10 20 30 40 50 60 70 80<br>VDS, Drain-to-Source Voltage (V)  QG,  Total Gate Charge (nC)<br>ID, Drain-to-Source Current (A)<br>C, Capacitance (pF)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 6.** Normalized On-Resistance vs. Temperature 

**Fig 7.** Typical Capacitance vs. Drain-to-Source Voltage 

**Fig 8.** Typical Gate Charge vs. 

Gate-to-Source Voltage 

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1000<br>100 TJ = 175°C<br>10 Lge TJ = 25 ° C<br>1<br>ffi<br>V GS  = 0V<br>0.1 Paine<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>VSD, Source-to-Drain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig 9.** Typical Source-Drain Diode Forward Voltage 

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78<br>Id = 1.0mA<br>76<br>74<br>PELE ALL<br>72<br>70 LEAL EEL<br>68 ALLEL<br>PZARRRRREEEE<br>66<br>64 P EL E LT E<br>-60 -40 -20 0 20 40 60 80 100120140160180<br>TJ , Temperature ( °C )<br>V(BR)DSS, Drain-to-Source Breakdown Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 11.** Drain-to-Source Breakdown Voltage 

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100µsec<br>100 1msec<br>Limited by<br>package<br>10 OPERATION<br>raat IN THIS<br>AREA<br>LIMITED BY<br>RDS(on)<br>1<br>10msec<br>Si.<br>Tc = 25°C<br>Tj = 175°C DC<br>Single Pulse<br>0.1 eSach<br>0.1 1 10<br>VDS, Drain-toSource Voltage (V)<br>Fig 10.   Maximum Safe Operating Area<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0 i<br>-10 0 10 20 30 40 50 60 70<br>VDS, Drain-to-Source Voltage (V)<br>Fig 12.   Typical Coss Stored Energy<br>ID,  Drain-to-Source Current (A)<br>Energy (µJ)<br>**----- End of picture text -----**<br>


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40<br>VGS = 5.5V<br>VGS = 6.0V<br>30 V GS  = 7.0V<br>VGS = 8.0V<br>VGS =10V<br>20 oy<br>10<br>0 Prt Ll<br>0 20 40 60 80 100 120 140 160 180 200<br>ID, Drain Current (A)<br>)<br><br> m<br>RDS(on),  Drain-to -Source On Resistance (<br>**----- End of picture text -----**<br>


**Fig 13.** Typical On-Resistance vs. Drain Current 

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10<br>1 D = 0.50 a<br>0.20<br>0.10<br>0.1<br>0.05<br>Saeeeee ca MUL A<br>1 0.02 1 TT<br>0.01<br>0.01<br>SINGLE PULSE<br>Notes:<br>=i ( THERMAL RESPONSE )<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 BeilrmaUN 0 UN<br>1E-006 1E-005 0.0001 0.001 0.01 ea 0.1 1<br>t1 , Rectangular Pulse Duration (sec)<br>Fig 14.   Maximum Effective Transient Thermal Impedance, Junction-to-Case<br>100<br>Allowed avalanche Current vs avalanche<br>pulsewidth, tav, assuming  Tj = 150°C and<br>oe mill Tstart =25°C (Single Pulse)<br>eT | ——<br>10<br>=ee<br>Allowed avalanche Current vs avalanche<br>1 pulsewidth, tav, assuming  Tstart = 150°C. j = 25°C and<br>ST Sian<br>- LAAN<br>0.1<br>1.0E-06 BAUER 1.0E-05 1.0E-04 1.0E-03 a 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.  Avalanche Current vs. Pulse Width<br>120<br>TOP          Single Pulse                 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>BOTTOM   1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)<br>100 I D  = 43A 1.Avalanche failures assumption:<br>T Purely a thermal phenomenon and failure occurs at a<br>temperature far in excess of Tjmaxjmax. This is validated for every<br>80 part type.<br>2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not<br>   exceeded.<br>60<br>NONE 3. Equation below based on circuit and waveforms shown in Figures<br>    23a, 23b.<br>40 4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse.<br>LENNIE 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage<br> increase during avalanche).<br>20 6. Iav = Allowable avalanche current.<br>LLL [PNN][ IT] TT 7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax<br>    (assumed as 25°C in Figure 14, 15).<br>ET ENIX<br>0 tav = Average time in avalanche.<br>25 50 75 100 125 150 175 D = Duty cycle in avalanche =  tav ·f<br>ZthJC(D, tav) = Transient thermal resistance, see Figure 14) thJC(D, tav) = Transient thermal resistance, see Figure 14) (D, tav) = Transient thermal resistance, see Figure 14) av) = Transient thermal resistance, see Figure 14) ) = Transient thermal resistance, see Figure 14)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Thermal Response ( Z thJC ) °C/W<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


   - Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmaxjmax. This is validated for every part type. 

2. Safe operation in Avalanche is allowed as long asTjmaxjmax is not exceeded. 

3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 

4. PD (ave) = Average power dissipation per single avalanche pulse. D (ave) = Average power dissipation per single avalanche pulse. = Average power dissipation per single avalanche pulse. 

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 

7. T = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed TT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). 

   - ZthJC(D, tav) = Transient thermal resistance, see Figure 14) thJC(D, tav) = Transient thermal resistance, see Figure 14) (D, tav) = Transient thermal resistance, see Figure 14) av) = Transient thermal resistance, see Figure 14) ) = Transient thermal resistance, see Figure 14) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC 

      - Iav = 2T/ [1.3·BV·Zth] 

**Fig 16.** Maximum Avalanche Energy vs. Temperature 

EAS (AR) = PD (ave)·tav 

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IRFR/U7546PbF ~~L~~ 

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**----- Start of picture text -----**<br>
4.0<br>3.5<br>TAT<br>3.0<br>ESSGmRn See<br>2.5<br>ID = 100µA<br>SET<br>ID = 250µA<br>2.0<br>I D  = 1.0mA BaSNGE<br>ID = 1.0A<br>1.5<br>BREAN<br>1.0 PEELE<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>VGS(th), Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
12<br>IF = 28A<br>10 V R = 51V<br>TT.<br>TJ = 25°C<br>8 T J = 125°C<br>Re<br>6<br>to<br>4<br>|eT<br>2<br>4m<br>T_T<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 17.** Threshold Voltage vs. Temperature 

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**----- Start of picture text -----**<br>
12<br>IF = 43A<br>10 V R = 51V<br>TJ = 25°C | t.<br>8 T J = 125°C<br>nee<br>6<br>nee<br>4<br>Te<br>2<br>Tt<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>IRRM (A)<br>**----- End of picture text -----**<br>


**Fig 18.** Typical Recovery Current vs. dif/dt 

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**----- Start of picture text -----**<br>
200<br>IF = 28A<br>VR = 51V<br>150 T J = 25°C ae<br>TJ = 125°C<br>nee<br>100<br>AY<br>eee<br>50<br>a<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 19.** Typical Recovery Current vs. dif/dt 

**Fig 20.** Typical Stored Charge vs. dif/dt 

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**----- Start of picture text -----**<br>
200<br>IF = 43A<br>VR = 51V<br>150 T J = 25°C<br>TJ = 125°C<br>100<br>| ScEE<br>ERBZ4<br>50<br>Ea<br>0<br>0 200 400 600 800 1000<br>diF /dt (A/µs)<br>QRR (nC)<br>**----- End of picture text -----**<br>


**Fig 21.** Typical Stored Charge vs. dif/dt 

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~~LéaR~~ 

IRFR/U7546PbF ~~LT~~ 

**Fig 22.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET[® ] Power MOSFETs 

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15V<br>VDS L DRIVER<br>R G D.U.T +<br>- [V][DD]<br>IAS<br>20V ae<br>tp 0.01<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
IAS<br>**----- End of picture text -----**<br>


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V(BR)DSS<br>tp ><br>**----- End of picture text -----**<br>


**Fig 23a.** Unclamped Inductive Test Circuit 

**Fig 23b.** Unclamped Inductive Waveforms 

**Fig 24a.** Switching Time Test Circuit 

**Fig 24b.** Switching Time Waveforms 

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VDD<br>**----- End of picture text -----**<br>


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Id<br>Vds<br>Vgs<br>Vgs(th) !<br>A | !<br>Qgs1 Qgs2 Qgd Qgodr<br>**----- End of picture text -----**<br>


**Fig 25a.** Gate Charge Test Circuit 

**Fig 25b.** Gate Charge Waveform 

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IRFR/U7546PbF ~~Oo~~ 

## ~~ItéR~~ 

## **D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D-Pak (TO-252AA) Part Marking Information** 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>i n al<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL<br>OR DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO<br>PRODUCT (OPTIONAL)<br>12 34<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT QUALIFIED TO THE<br>ASSEMBLY<br>LOT CODE CONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

9 www.irf.com © 2014 International Rectifier ~~z= ©~~ 

~~©~~ 

Submit Datasheet Feedback                   November 7, 2014 ~~—~~ 

IRFR/U7546PbF ~~OO~~ 

## ~~IR~~ 

## **I-Pak (TO-251AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **I-Pak (TO-251AA) Part Marking Information** 

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**----- Start of picture text -----**<br>
THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001<br>56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


EXAMPLE: 

Note: "P" in assembly line position indicates Lead-Free" 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

10 www.irf.com        © 2014 International Rectifier Submit Datasheet Feedback                   November 7, 2014 ~~=~~ 

~~TGR~~ 

IRFR/U7546PbF ~~a~~ 

## **D-Pak (TO-252AA) Tape & Reel Information** (Dimensions are shown in millimeters (inches)) 

**==> picture [415 x 106] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>**----- End of picture text -----**<br>


NOTES : 

1.  CONTROLLING DIMENSION : MILLIMETER. 

2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 

3.  OUTLINE CONFORMS TO EIA-481 & EIA-541. 

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  13 INCH<br>16 mm<br>**----- End of picture text -----**<br>


NOTES : 

1. OUTLINE CONFORMS TO EIA-481. 

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 

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IRFR/U7546PbF ~~L~~ 

## ~~ItaR~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D-Pak|MSL1|
||I-Pak|N/A|
|**RoHS Compliant**|Yes||



- Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ 

- ††  Applicable version of JEDEC standard at the time of product release. 

|**Date**|**Comment**|
|---|---|
|11/7/2014|Updated EAS (L =1mH)= 178mJ  on page 2<br>Updated note 10  “Limited by TJmax, starting TJ= 25°C, L = 1mH, RG= 50, IAS= 19A, VGS=10V” on page 2<br>Updated package outline on page 9 & 10|



**IR WORLD HEADQUARTERS:** 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ Submit Datasheet Feedback                   November 7, 2014 ~~_~~ 

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## Links

- [View this product on Novapart](https://novapart.co/products/IRFR7546TRPBF/power-mosfet-n-channel-60-v-56-a-7900-ohm-to-252aa)
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- [Supplier page](https://es.farnell.com/infineon/irfr7546trpbf/mosfet-n-ch-60v-56a-to-252aa-3/dp/2456720)
---

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