# Power MOSFET, P Channel, 150 V, 13 A, 0.295 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725972/)

**URL**: https://novapart.co/products/IRFR6215TRLPBF/power-mosfet-p-channel-150-v-13-a-0295-ohm-to
**SKU**: IRFR6215TRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.5410
**Stock**: 1000+
**Lead Time**: 141 days (indicative)

## Description

Transistor Polarity:P Channel; Continuous Drain Current Id:-13A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.295ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | P Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 110W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 150V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 13A |
| Drain Source On State Resistance | 0.295ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725972/)

IRFR6215PbF IRFU6215PbF ~~po~~ 

## ~~Cinfineon~~ 

- P-Channel 

- 175°C Operating Temperature 

- Surface Mount (IRFR6215) 

- Straight Lead (IRFU6215) 

- Advanced Process Technology 

- Fast Switching 

- Fully Avalanche Rated 

- Lead-Free 

## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

The D-PAK is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

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HEXFET [® ] Power MOSFET<br>**----- End of picture text -----**<br>


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VDSS  -150V<br>RDS(on) 0.295 <br>ID  -13A<br>——<br>D<br>D<br>S  S<br>D<br>G  G<br>D- Pak  I- Pak<br>IRFR6215PbF  IRFU6215PbF<br>G  D  S<br>Gate  Drain  Source<br>->}<br>**----- End of picture text -----**<br>


|mount applications.|||||
|---|---|---|---|---|
|**Base part number**|**Package Type**|**Standard Pack**||**Orderable Part Number**|
|||**Form**|**Quantity**||
|IRFU6215PbF|I-Pak|Tube|75|IRFU6215PbF|
|IRFR6215PbF|D-Pak|Tube|75|IRFR6215PbF|
|||Tape and Reel Left|3000|IRFR6215TRLPbF|



## **Absolute Maximum Ratings** 

|**Symbol**<br>~~———————~~|**Parameter**<br>~~———————~~|**Max.**<br>~~ee~~|**Units**<br>~~ee~~|
|---|---|---|---|
|ID@ TC= 25°C<br>~~———————~~|Continuous Drain Current, VGS@  -10V<br>~~———————~~|-13<br>~~ee~~|A<br>~~ee~~|
|ID @TC= 100°C<br>~~———————~~|Continuous Drain Current,VGS @-10V<br>~~———————~~|-9.0<br>~~ee~~||
|IDM<br>~~———————~~|Pulsed Drain Current<br>~~———————~~|-44<br>~~ee~~||
|PD@TC= 25°C<br>~~———————~~|Maximum Power Dissipation<br>~~———————~~|110<br>~~ee~~|W<br>~~ee~~|
|~~———————~~|Linear Derating Factor<br>~~———————~~|0.71<br>~~ee~~|W/°C<br>~~ee~~|
|VGS|Gate-to-Source Voltage|± 20|V|
|EAS|Single Pulse Avalanche Energy |310|mJ|
|IAR|Avalanche Current|-6.6|A|
|EAR<br>~~a~~|Repetitive Avalanche Energy <br>~~a~~|11<br>~~a~~|mJ<br>~~a~~|
|dv/dt<br>~~a~~|Peak Diode Recoverydv/dt<br>~~a~~|5.0<br>~~a~~|V/ns<br>~~a~~|
|TJ<br>TSTG<br>~~a~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175<br>~~a~~|°C<br>~~a~~|
|~~a~~|Soldering Temperature, for 10 seconds (1.6mm from case)<br>~~a~~|300<br>~~a~~||



## **Thermal Resistance** 

|**Symbol **|**Parameter **|**Typ. **|**Max.**|**Units**|
|---|---|---|---|---|
|RJC|Junction-to-Case|–––|1.4|°C/W|
|RJA|Junction-to-Ambient(PCB Mount) |–––|50||
|RJA|Junction-to-Ambient|–––|110||



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IRFR/U6215PbF ~~LLL~~ 

|~~ee~~<br>~~—————~~|**Parameter**<br>~~nr~~<br>~~————————~~|**Min.**<br>~~ny~~<br>~~———~~|**Typ. Max. Units**<br>~~I~~<br>~~———~~|**. Max. Units**<br>~~ts~~<br>~~———~~|**. Max. Units**<br>~~ts~~<br>~~———~~|**Conditions**<br>~~——<—<~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~ee~~<br>~~—————~~|Drain-to-Source Breakdown Voltage<br>~~nr~~<br>~~————————~~|-150<br>~~ny ~~<br>~~———~~|–––<br> ~~I ~~<br>~~———~~|–––<br> ~~ts~~<br>~~———~~|V<br>~~ts~~<br>~~———~~|VGS =0V, ID = -250µA<br>~~——<—<~~|
|(BR)DSS<br>V(BR)DSS/TJ<br>~~—————~~|Breakdown Voltage Temp. Coefficient<br>~~————————~~|–––<br>~~———~~|-0.20<br>~~———~~|–––<br>~~———~~|V/°C Reference to 25°C<br>~~———~~|V/°C Reference to 25°C,ID= -1mA<br>~~——<—<~~|
|RDS(on)<br>~~—————~~<br>~~—~~|Static Drain-to-Source On-Resistance<br>~~————————~~<br>~~=~~|–––<br>~~———~~<br>~~=~~|–––<br>~~———~~<br>~~=~~|0.295<br>~~———~~|<br>~~———~~|VGS= -10V,ID= -6.6A<br>~~——<—<~~|
|||–––<br>~~=~~|–––<br>~~=~~|0.58||VGS= -10V,ID= -6.6ATJ=150°C|
|VGS(th)<br>~~—~~<br>~~ee~~|Gate Threshold Voltage<br>~~=~~<br>~~nr~~|-2.0<br>~~= ~~<br>~~ID~~|–––<br> ~~=~~|-4.0|V|VDS= VGS,ID= -250µA|
|gfs<br>~~ee~~<br>~~es~~|Forward Trans conductance<br>~~nr~~<br>~~ee~~|3.6<br>~~ID~~<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|S<br>~~ee~~|VDS= -50V, ID= -6.6A<br>~~ee~~|
|IDSS<br>~~ee~~<br>~~es~~|Drain-to-Source Leakage Current<br>~~nr ~~<br>~~ee~~|–––<br> ~~ID~~<br>~~ee~~|–––<br>~~ee~~|-25<br>~~ee~~|µA<br>~~ee~~|VDS= -150V, VGS= 0V<br>~~ee~~|
|||–––<br>~~ee~~|–––<br>~~ee~~|-250<br>~~ee~~||VDS = -120V,VGS =0V,TJ =150°C<br>~~ee~~|
|IGSS<br>~~es~~<br>~~a~~<br>~~ee~~|Gate-to-Source Forward Leakage<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|-100<br>~~ee~~|nA<br>~~ee~~|VGS = -20V<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~ee~~|–––<br>~~oe~~||100<br>~~ee~~||VGS =20V<br>~~ee~~|
|Qg<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|–––<br>~~oe~~|–––|66<br>~~ee~~|nC<br>|ID= -6.6A<br>VDS= -120V<br>VGS= -10V,See Fig. 6 and 13<br>~~ee~~<br>|
|Qgs<br>~~ee~~|Gate-to-Source Charge<br>~~ee~~|–––<br>~~oe~~|–––|8.1<br>~~ee~~|||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-to-Drain Charge<br>~~ee~~<br>|–––<br>~~oe~~<br>|–––<br>|35<br>~~ee~~<br>|||
|gd<br>td(on)<br>~~ee~~<br>~~eeSe~~|Turn-On Delay Time<br>~~ee ~~<br>~~Se~~|–––<br> ~~oe~~<br>~~Se~~|14<br>~~Se~~|–––<br>~~ee~~<br>~~Se~~|ns<br>~~Se~~|VDD= -75V<br>ID= -6.6A<br>RG= 6.8<br>RD=12See Fig. 10<br>~~ee~~<br>~~Se~~|
|d(on)<br>tr<br>~~eeSe~~|RiseTime<br>~~Se~~|–––<br>~~Se~~|36<br>~~Se~~|–––<br>~~Se~~|||
|td(off)<br>~~Se~~|Turn-Off DelayTime<br>~~Se~~|–––<br>~~Se~~|53<br>~~Se~~|–––<br>~~Se~~|||
|d(off)<br>tf<br>~~Se~~|Fall Time<br>~~Se~~|–––<br>~~Se~~|37<br>~~Se~~|–––<br>~~Se~~|||
|LD<br>~~|~~<br>~~es~~|Internal Drain Inductance<br>~~|~~<br>~~es~~|–––<br>~~|~~|4.5<br>~~|~~|–––<br>~~|~~|nH<br>~~|~~<br>~~a~~|Between lead<br>,6mm (0.25in.)<br>from package<br>and centerofdie contact<br>~~|~~<br>,<br>~~ne~~|
|LS<br>~~|~~<br>~~es~~|Internal Source Inductance<br>~~|~~<br>~~es~~|–––<br>~~|~~|7.5<br>~~|~~<br>~~a~~|–––<br>~~|~~<br>~~a~~|||
|Ciss<br>~~es~~<br>~~——————————~~|Input Capacitance<br>~~es~~<br>~~——————————~~|–––<br>~~——————————~~|860<br>~~——————————~~<br>~~a~~|–––<br>~~——————————~~<br>~~a~~|pF <br>~~——————————~~<br>~~a~~|VGS= 0V<br>VDS= -25V<br>ƒ= 1.0MHz,See Fig. 5<br>,<br>~~——————————~~<br>~~ne~~|
|Coss<br>~~es~~<br>~~——————————~~|OutputCapacitance<br>~~es~~<br>~~——————————~~|–––<br>~~——————————~~|220<br>~~——————————~~<br>~~a~~|–––<br>~~——————————~~<br>~~a~~|||
|Crss<br>~~——————————~~|Reverse Transfer Capacitance<br>~~——————————~~|–––<br>~~——————————~~|130<br>~~——————————~~<br>~~a~~|–––<br>~~——————————~~<br>~~a~~|||



**Notes:** 

-  Repetitive rating;  pulse width limited by max. junction temperature. (See Fig.11) 

-  starting  TJ = 25°C, L = 14mH, RG = 25, IAS = -6.6A.(See Fig.12) 

-  ISD -6.6A, di/dt  -620A/µs, VDD  V(BR)DSS, TJ  175°C 

-  Pulse width 300µs; duty cycle  2%. 

-  This is applied for I-PAK, LS of D-PAK is measured between lead and center of  die contact. 

- Uses IRF6215 data and test conditions. 

- When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. 

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100 100<br>                   VGS                     VGS<br> TOP          - 15V  TOP          - 15V<br>                  - 10V                   - 10V<br>                  - 8.0V                   - 8.0V<br>                  - 7.0V                   - 7.0V<br>- 6.0V - 6.0V<br>                  - 5.5V                   - 5.5V<br>- 5.0V - 5.0V<br> BOTTOM  - 4.5V  BOTTOM  - 4.5V<br>10 10<br>-4.5V<br> -4.5V  20µs PULSE WIDTH   20µs PULSE WIDTH<br>1 Ft|  T   = 25°Cc A 1 Foc  T   = 175°CC<br>1 10 100 1 10 100<br>-V     , Drain-to-Source Voltage (V)DS -V     , Drain-to-Source Voltage (V)DS<br>Fig. 1  Typical Output Characteristics  Fig. 2  Typical Output Characteristics<br>100 2.5<br> I    = -11AD<br>2.0<br>T  = 25°CJ<br>— 1.5 ve<br>T  = 175°CJ<br>2 AE<br>10<br>1.0<br>Ae er<br>0.5<br> V     = -50VDS<br>1 /f yak  20µs PULSE WIDTH  A 0.0 CATTHE  V      = -10V  E GS<br>4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>-V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>Fig. 4  Normalized On-Resistance<br>Fig. 3  Typical Transfer Characteristics<br>vs. Temperature<br>3  2016-5-31<br>re<br>D D<br>-I   , Drain-to-Source Current (A) -I   , Drain-to-Source Current (A)<br>(Normalized)<br>D<br>-I   , Drain-to-Source Current (A)<br>DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


~~Cinfineon~~ 

IRFR/U6215PbF ~~LLL~~ 

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**----- Start of picture text -----**<br>
2000 20<br>V      = 0V,         f = 1MHzGS  I    = -6.6AD<br>C       iss         gs         gd         ds = C     + C     ,   C     SHORTED  V      = -120VDS<br>C      = Crss         gd  V      = -75VDS<br>1600 C      = C     + Coss        ds         gd 16  V      = -30VDS<br>C iss<br>NL + 1g<br>1200 12<br>ee<br>C oss<br>800 8<br>C rss<br>400 4<br>oN tee<br> FOR TEST CIRCUIT<br>    SEE FIGURE 13<br>0 A 0<br>1 10 S|} 100 0 ELI 20 40 60 80<br>-V     , Drain-to-Source Voltage (V)DS Q   , Total Gate Charge (nC)G<br>C, Capacitance (pF)<br>GS<br>-V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 5.** Typical Capacitance vs. 

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      Drain-to-Source Voltage<br>**----- End of picture text -----**<br>


- **Fig 6.** Typical Gate Charge vs. Gate-to-Source Voltage 

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100<br>T  = 175°CJ<br>10<br>T  J = 25°C<br>1<br>Lf V      = 0V GS<br>0.1<br>0.2 0.6 1.0 1.4 1.8<br>-V     , Source-to-Drain Voltage (V)SD<br>SD<br>-I     , Reverse Drain Current (A)<br>**----- End of picture text -----**<br>


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100<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>10µs<br>10 100µs<br>1ms<br> T     = 25°C C<br> T     = 175°CJ<br>aN  Single Pulse 10ms<br>1<br>1 10 100 1000<br>-V     , Drain-to-Source Voltage (V)DS<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


**Fig. 7** Typical Source-to-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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14<br>12 PwPT AAT| EE TTEEtt tT<br>10 PTpity| TNEtT YEEEE LE LL<br>8 pt tt | | Ph Et<br>See eee Nee<br>6 P|Pt tTtT |ettertEE rTrE UTErE TN TEET<br>4 Pt|| tT | | | TE | ET | dT hETT dT dT dTTN CN<br>2 PtP| tTtT |eTttETrt TT| TTETTY<br>0<br>Ft tT > tT tT tt tl EldT TY<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)°<br>D<br>-I   , Drain Current (A)<br>**----- End of picture text -----**<br>


7 **Fig 10a.** Switching Time Test Circuit 

**Fig 9.** Maximum Drain Current vs. Case Temperature 

**Fig 10b.** Switching Time Waveforms 

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10<br>1 D = 0.50 pcep ced<br>0.20<br>0.10<br>=a PDM<br>0.05<br>0.1 =n<br>t<br>0.02 1<br>0.01 t<br>2<br>      SINGLE PULSE Notes:<br>(THERMAL RESPONSE) 1. Duty factor D =  t    1 / t  2<br>0.01 2. Peak T  = P      x Z         + T                                  J DM thJC C                           A<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t   , Rectangular Pulse Duration (sec)1<br>thJC<br>Thermal Response (Z       )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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**Fig 12a.** Unclamped Inductive Test Circuit : 

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800<br>                    ID<br>TOP            -2.7A<br>                   -4.7A<br>BOTTOM    -6.6A<br>600 \<br>400<br>200<br>SS<br>0<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy vs. Drain Current 

**Fig 12b.** Unclamped Inductive Waveforms 

**Fig 13b.** Gate Charge Test Circuit 

**Fig 13a.** Gate Charge Waveform 

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**Fig 14.** Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 

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IRFR/U6215PbF ~~LLL~~ 

## ~~Cinfineon~~ 

## **D-Pak (TO-252AA) Package Outline** (Dimensions are shown in millimeters (inches)) 

## **D-Pak (TO-252AA) Part Marking Information** 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY<br>INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL A<br>OR DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO<br>PRODUCT (OPTIONAL)<br>12 34<br>P =  DESIGNATES LEAD-FREE<br>PRODUCT QUALIFIED TO THE<br>ASSEMBLY<br>LOT CODE yt CONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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## ~~Cinfineon~~ 

## **I-Pak (TO-251AA) Package Outline** Dimensions are shown in millimeters (inches) 

## **I-Pak (TO-251AA) Part Marking Information** 

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**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001<br>56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A" he v a<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL A a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>i<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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IRFR/U6215PbF ~~LLL~~ 

**D-Pak (TO-252AA) Tape &** Reel Information Dimensions are shown in millimeters (inches) 

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**----- Start of picture text -----**<br>
TR TRR TRL<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>16 mm<br>NOTES :<br>1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Note: For the most current drawing please refer to Infineon’s web site www.infineon.com 

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IRFR/U6215PbF ~~Ly~~ 

## **Qualification Information[† ]** 

|**Qualification Information[† ]**|||
|---|---|---|
|**Qualification Level**|Industrial<br>(per JEDEC JESD47F)††||
|**Moisture Sensitivity Level**|D-Pak|MSL1<br>(per JEDEC J-STD-020D)††|
||I-Pak||
|**RoHS Compliant**|Yes||



- Qualification standards can be found at Infineon’s web site www.infneon.com 

- ††  Applicable version of JEDEC standard at the time of product release. 

## **Revision History** 

|**Date**|||**Comments**|
|---|---|---|---|
|5/31/2016||Updated datasheet with corporate template.||
|||Added disclaimer on lastpage.||



## **Trademarks of Infineon Technologies AG** 

µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™, DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™, 

SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™ 

Trademarks updated November 2015 

## **Other Trademarks** 

Edition 2016-04-19 **IMPORTANT NOTICE** ; ; ; oo , The For further information on the product, technology, **Published by** information given in this document shall in no delivery terms and conditions and prices please event be regarded as a guarantee of conditions or contact your nearest Infineon Technologies office **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . (www.infineon.com). **81726 Munich, Germany** With respect to any examples, hints or any typical Please note that this product is not qualified values stated herein and/or any information **© 2016 Infineon Technologies AG.** regarding the application of the product, Infineon according to the AEC Q100 or AEC Q101 documents . ; ; **All Rights Reserved.** Technologies hereby disclaims any and all of the Automotive Electronics Council. warranties and liabilities of any kind, including Do you have a question about this without limitation warranties of non-infringement **WARNINGS document?** of intellectual property rights of any third party. Due to technical requirements products may **Email:** erratum@infineon.com contain dangerous substances. For information on In addition, any information given in this document __the types in question please contact your nearest **is subject to customer’s compliance with its** Infineon Technologies office. obligations stated in this document and any **Document reference** applicable legal requirements, norms and Except as otherwise explicitly approved by Infineon Technologies in a written document signed by **ifx1** standards concerning customer’s products and any authorized representatives of Infineon Technologies, use of the product of Infineon Technologies in **Infineon Technologies’ products may** not be used in customer’s applications. any applications where a failure of the product or any consequences of the use thereof can reasonably The data contained in this document is exclusively be expected to result in personal injury. intended for technically trained staff. It is the **responsibility of customer’s technical departments** to evaluate the suitability of the product for the 

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2016-5-31 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR6215TRLPBF/power-mosfet-p-channel-150-v-13-a-0295-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr6215trlpbf/mosfet-p-ch-150v-13a-to-252aa/dp/2725972)
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