# Power MOSFET, N Channel, 55 V, 42 A, 0.011 ohm, TO-252 (DPAK), Surface Mount

![Product image](https://novapart.co/image/farnell:2839492RL/)

**URL**: https://novapart.co/products/IRFR48ZTRLPBF/power-mosfet-n-channel-55-v-42-a-0011-ohm-to-252
**SKU**: IRFR48ZTRLPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3060
**Stock**: 10+

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.00886ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | - |
| Svhc | No SVHC (21-Jan-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 91W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252 (DPAK) |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 0.011ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2839492RL/)

PD - 95950A 

## IRFR48ZPbF IRFU48ZPbF 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

## HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 11m Ω<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


D-Pak I-Pak IRFR48ZPbF IRFU48ZPbF 

## **Absolute Maximum Ratings** 

|~~rr~~|**Parameter**<br>~~rr~~|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C<br>~~rr~~|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~rr~~|62|A<br>|
|ID@ TC= 100°C <br>~~rr~~|Continuous Drain Current, VGS@ 10V<br>~~rr~~<br>~~a~~|44<br>~~a~~||
|ID@ TC= 25°C<br>~~rr~~<br>~~**a**~~|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~rr~~<br>~~a~~<br>~~**a**~~|42<br>~~a~~<br>||
|IDM<br>~~rr~~<br>~~**a**~~|Pulsed Drain Current<br>~~rr~~<br>~~**a**~~|250<br>||
|PD@TC= 25°C<br>~~rr~~<br>~~**a**~~|Power Dissipation<br>~~rr~~<br>~~**a**~~|91<br><br>~~G~~|W<br>|
||Linear DeratingFactor<br>~~a~~|0.61<br>~~a~~<br>~~G~~|W/°C<br>~~a~~|
|VGS<br>|Gate-to-Source Voltage<br>~~a~~<br>~~a~~|± 20<br>~~a~~<br>~~G~~<br>~~a~~|V<br>~~a~~<br>~~a~~|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~Se~~|74<br>~~Se~~|mJ<br>~~Se~~|
|EAS(Tested)|Single Pulse Avalanche EnergyTested Value<br>~~Se~~<br>~~Pe~~|110<br>~~Se~~<br>~~Pe~~||
|IAR|Avalanche Current<br>~~Se~~<br>~~Pe~~|See Fig.12a, 12b, 15, 16<br>~~Se~~<br>~~Pe~~<br>~~ee~~|A<br>~~Se~~|
|EAR|Repetitive Avalanche Energy||mJ|
|TJ<br>TSTG|Operating Junction and<br>Storage Temperature Range<br>~~ee~~|-55  to + 175<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~|
||Soldering Temperature, for 10 seconds<br>~~ee~~|300 (1.6mm from case )<br>~~ee~~<br>~~ee~~||
||MountingTorque, 6-32or M3 screw<br>~~ee~~<br>~~a~~|10lbf in(1.1N m)<br>~~ee~~<br>~~ee~~<br>~~a~~|~~ee~~<br>~~a~~|



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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~Gs~~|**Typ.**<br>~~Gs~~|**Max. **<br>~~GO~~|**Units**<br>~~GO~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~es~~|55<br>~~es~~<br>~~Gs~~<br>~~Gs~~|–––<br>~~es~~<br>~~Gs~~<br>~~Gs~~|–––<br>~~es~~<br>~~GO~~<br>~~Gs~~|V<br>~~es~~<br>~~GO~~<br>~~Gs~~|VGS= 0V,ID= 250µA<br>~~es~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~<br>~~Ps~~|–––<br>~~es~~<br>~~Gs~~<br>~~Ps~~<br>~~Gs~~<br>~~GD~~|0.054<br>~~es~~<br>~~Gs~~<br>~~Ps~~<br>~~Gs~~<br>~~GD~~|–––<br>~~es~~<br>~~GO~~<br>~~Ps~~<br>~~Gs~~<br>~~GO~~|V/°C<br>~~es~~<br>~~GO~~<br>~~Ps~~<br>~~Gs~~<br>~~GO~~|Reference to 25°C,ID= 1mA<br>~~es~~<br>~~Ps~~<br>~~GO~~<br>~~~~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~es~~|–––<br>~~Gs~~<br>~~es~~<br>~~GD~~<br>~~Gs~~|8.86<br>~~Gs ~~<br>~~es~~<br>~~GD~~<br>~~es~~|11<br> ~~Gs~~<br>~~es~~<br>~~GO~~|mΩ<br>~~Gs~~<br>~~es~~<br>~~GO~~|VGS= 10V,ID= 37A<br>~~es~~<br>~~GO~~<br>~~~~~|
|VGS(th)|Gate Threshold Voltage<br>~~es~~<br>~~ee~~|2.0<br>~~es~~<br>~~GD~~<br>~~ee~~<br>~~Gs~~|–––<br>~~es~~<br>~~GD ~~<br>~~ee~~<br>~~es~~|4.0<br>~~es~~<br> ~~GO~~<br>~~ee~~|V<br>~~es~~<br>~~GO~~<br>~~ee~~|VDS= VGS,ID= 50µA<br>~~es~~<br>~~GO~~<br>~~~~~<br>~~ee~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~Pe~~|120<br>~~ee~~<br>~~Gs ~~<br>~~Pe~~|–––<br>~~ee~~<br> ~~es~~<br>~~Pe~~|–––<br>~~ee~~<br>~~Pe~~|S<br>~~ee~~<br>~~Pe~~|VDS= 25V,ID= 37A<br>~~ee~~<br>~~Pe~~|
|IDSS|Drain-to-Source Leakage Current<br>~~EE~~|–––<br>~~EE~~|–––<br>~~EE~~|20<br>~~EE~~|µA<br>~~EE~~|VDS= 55V,VGS= 0V<br>~~EE~~|
|||–––<br>~~EE~~|–––<br>~~EE~~|250<br>~~EE~~||VDS= 55V,VGS= 0V,TJ= 125°C<br>~~EE~~|
|IGSS|Gate-to-Source Forward Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>|200<br>~~a~~<br>|nA<br>~~a~~|VGS= 20V<br>~~a~~|
||Gate-to-Source Reverse Leakage<br>~~a~~<br>~~|~~|–––<br>~~a~~<br>~~|tT~~<br>~~ee~~|–––<br>~~a~~<br>~~tT~~<br>~~es~~|-200<br>~~a~~<br>~~tT~~||VGS= -20V<br>~~a~~|
|Qg|Total Gate Charge<br>~~a~~<br>~~|~~<br>~~es~~<br>~~ee~~|–––<br>~~a~~<br>~~|tT~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|40<br>~~a~~<br>~~tT~~<br>~~es~~<br>~~es~~<br>~~ee~~|60<br>~~a~~<br>~~tT~~<br>~~es~~|nC<br>~~a~~|VDS= 44V<br>ID= 37A<br>VGS= 10V<br>~~a~~<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|11<br> ~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|15<br>~~ee~~<br>~~ee~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~ee~~|–––<br>~~**ee** ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|15<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|ns|VGS= 10V<br>VDD= 28V<br>ID= 37A<br>RG= 12Ω<br>~~®~~|
|tr|Rise Time<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|61<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|td(off)|Turn-Off DelayTime<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|tf|Fall Time|–––<br>~~ee ~~|35<br> ~~ee~~|–––|||
|LD|Internal Drain Inductance<br>~~ae~~<br>~~HS~~|–––<br>~~ae~~<br>~~HS~~|4.5<br>~~ae~~<br>~~HS~~|–––<br>~~ae~~<br>~~HS~~|nH<br>~~HS~~|S<br>D<br>G<br>Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>~~HS~~|
|LS|Internal Source Inductance<br>~~ae~~<br>~~HS~~|–––<br>~~ae~~<br>~~HS~~<br>~~ee~~|7.5<br>~~ae~~<br>~~HS~~<br>~~ee~~|–––<br>~~ae~~<br>~~HS~~|||
|Ciss|Input Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~|1720<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|290<br> ~~ee~~<br>~~ee~~<br>~~ee~~|–––<br>~~ee~~|||
|Crss|Reverse Transfer Capacitance<br>~~ee~~|–––<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|160<br>~~ee~~<br>~~ee~~<br>~~es~~|–––<br>~~ee~~|||
|Coss|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|1000<br> ~~ee~~<br>~~ee~~<br>~~es~~<br>~~**ee**~~|–––<br>~~ee~~||VGS= 0V,VDS= 1.0V, ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~ee~~<br>~~ee~~|–––<br>~~ee ~~<br>~~ee~~<br>~~**ee**~~|230<br> ~~es~~<br>~~ee~~<br>~~**ee**~~|–––<br>~~ee~~||VGS= 0V,VDS= 44V, ƒ= 1.0MHz<br>~~®~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––<br>~~**ee**~~|360<br>~~**ee**~~|–––||VGS= 0V,VDS= 0V to 44V<br>~~®~~|



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1000 1000<br>VGS VGS<br>TOP           15V TOP           15V<br>10V 10V<br>8.0V ee el 8.0V PT TTTTT TTTTTTTT<br>7.0V 7.0V<br>6.0V Zn 6.0V aay eel<br>5.5V 5.5V<br>100 5.0V 100 5.0V<br>| BOTTOM 4.5V J BOTTOM g 4.5V ee<br>PF| ZAPeoel |ey|ey|| | 4a ere e 4.5V T<br>10 10<br>4.5V<br>≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH<br>1 inart Tj = 25°C ae | 1 Sieie ati Tj = 175°Cj = 175°C = 175°C<br>0.1 1 10 100 0.1 1 10<br>VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>1000 60<br>pot et 50 Fa TJ = 25°C<br>100<br>S TJ = 175°C S- 40<br>es aw ae<br>10 ee 30 A TJ = 175°C<br>e e) 7 ee ee ee ee<br>TJ = 25°C 20<br>1<br>e S re ee 10 /<br>V = 25V VDS = 10V<br>| of [yf] DS<br>≤ 60µs PULSE WIDTH 380µs PULSE WIDTH<br>0.1 0<br>2 4 6 8 10 12 0 20 40 60 80<br>ID,Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


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1000<br>VGS<br>TOP           15V<br>10V<br>8.0V PT TTTTT TTTTTTTT<br>7.0V<br>6.0V<br>aay eel<br>5.5V<br>100 5.0V<br>J BOTTOM g 4.5V ee<br>|ey|ey|| | 4a ere e 4.5V T<br>10<br>≤ 60µs PULSE WIDTH<br>Sieie ati Tj = 175°Cj = 175°C = 175°C<br>1<br>0.1 1 10 100<br>VDS, Drain-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Typical Forward Transconductance vs. Drain Current 

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10000 20<br>VGS   = 0V,       f = 1 MHZ ID= 37A<br>= Ciss   = C gs + Cgd,  C ds SHORTED T _T]<br>C  = C VDS= 44V<br>i Crss  oss  = Cds gd + Cgd 16 ao VDS= 28VVDS= 11V e<br>Ciss 12<br>ee n | ile<br>1000 | el a<br>8<br>iz Coss tH — / |<br>Crss 4<br>P O AESHSST >Ltt ae eee<br>0<br>ELE Se TT ——<br>100 0 10 20 30 40 50 60<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance vs. Fig 6.   Typical Gate Charge vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.00 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.00 100<br>TJ = 175°C 1 00 µsec<br>10.00 10<br>1msec<br>1.00 TJ = 25°C 1 10 mse c<br>Tc = 25°C<br>Tj = 175°C<br>VGS = 0V Single Pulse DC<br>0.10 e e] 0.1 LB<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100<br>VSD, Source-to-Drain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A) ID,  Drain-to-Source Current (A)<br>C, Capacitance(pF)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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70 2.5<br>LIMITED BY PACKAGE ID = 37A<br>60 VGS = 10V<br>en 2.0 EERE<br>50 A nd LL Seeeeeey<br>40<br>ee ee Penney<br>1.5<br>OHA<br>30<br>PPT [T] [N] ae<br>PTTTTING) EEE<br>20<br>1.0<br>10<br>fe a>cn<br>0 Pt | Tt tN aTDATEP<br>0.5<br>25 50 75 100 125 150 175<br>-60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C)<br>TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current vs. Fig 10.   Normalized On-Resistance<br>Case Temperature vs. Temperature<br>10<br>1 D = 0.50<br>0.20<br>0.10<br>0.1 0.05 R1 R1 R2 R2 R3R3 Ri (°C/W)     τ i (sec)<br>e 0.020.01 e τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 τ C τ 0.7206     0.0003260.6009     0.001810 1<br>0.01 er Ci= Ci τ i / Rii / Ri 0.3175     0.014886<br>p f SINGLE PULSE ed<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>Geet Siere nteee | l<br>0.001<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>ID , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>wv IAS<br>20VVGS<br>tp 0.01 Ω<br>y dt a<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>"><br>‘|<br>a<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>r QGS t QGD<br>VG<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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L<br>VCC<br>DUT<br>0 wel. ;<br>1K<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

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300<br>                 I<br>D<br>250 TOP          4.3A<br>                6.3A<br>BOTTOM   37A<br>200<br>150 Renee N N \<br>10050 KINNI| | pS ee<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>vs. Drain Current<br>5.0 a<br>4.5 ea e ee<br>4.0 ea s e<br>3.5 PT T SSRNSSaEESOe<br>3.0 ID = 1.0A PSS<br>2.52.0 IIID DD  = 150µA= 50µA= 250µA eT1LTtTPSSTLERtL ONSTNSRO<br>ID = 1.0mA<br>1.5 Pt t T TTtt TINSrE RS<br>1.0 esa s O<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>TJ , Temperature ( °C )<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage vs. Temperature 

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1000<br>Duty Cycle = Single Pulse<br>100 Allowed avalanche Current vs<br>avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses<br>10 0.05<br>0.1 0<br>1<br>0.1 | ed<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current vs.Pulsewidth<br>80 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 37A   Purely a thermal phenomenon and failure occurs at a<br>60     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>Ne 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>40<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>NCE     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>20     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>HHT 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>ANS     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy vs. Temperature 

**PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

- **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL CN<br>OR RECTIFIER IRFR120 DATE CODEP =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE e a t PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** www.irf.com 

9 

**==> picture [278 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL CS<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A" mn | LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL a<br>RECTIFIER IRFU120 DATE CODE<br>LOGO Tea P1198 P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 

www.irf.com 

**==> picture [241 x 207] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>SOOO SG Ol I oeoolf 4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE, -<br>12.1 ( .476 )11.9 ( .469 ) FEED DIRECTION 8.1 ( .318 )7.9 ( .312 ) FEED DIRECTION<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>| :<br>16 mm<br>ma a<br>**----- End of picture text -----**<br>


**==> picture [21 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES :<br>**----- End of picture text -----**<br>


**==> picture [86 x 5] intentionally omitted <==**

**----- Start of picture text -----**<br>
1. OUTLINE CONFORMS TO EIA-481.<br>**----- End of picture text -----**<br>


Coss eff. is a fixed capacitance that gives the same charging time 

Repetitive rating;  pulse width limited by 

as Coss while VDS is rising from 0 to 80% VDSS . 

max. junction temperature. (See fig. 11). 

) Limited by TJmax, starting TJ = 25°C, L = 0.11mH ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 37A, VGS =10V. Part not avalanche performance. 

- ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

recommended for use above this value. 

- © his value determined from sample failure population. 100% tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

θ 

Data and specifications subject to change without notice. This product has been designed  for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

11 



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- [Supplier page](https://es.farnell.com/infineon/irfr48ztrlpbf/mosfet-n-ch-55v-42a-to-252/dp/2839492RL)
---

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