# Power MOSFET, N Channel, 55 V, 30 A, 0.0245 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725969RL/)

**URL**: https://novapart.co/products/IRFR4105ZTRPBF/power-mosfet-n-channel-55-v-30-a-00245-ohm-to
**SKU**: IRFR4105ZTRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €1.3300
**Stock**: 10+
**Lead Time**: 63 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (23-Jan-2024) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 48W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 30A |
| Drain Source On State Resistance | 0.0245ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725969RL/)

PD - 95374B 

## IRFR4105ZPbF IRFU4105ZPbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 55V<br>R  = 24.5m Ω<br>DS(on)<br>G<br>ID = 30A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in  a wide variety of applications. 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~ne~~|30<br>~~ne~~|A<br>~~ne~~|
|ID@ TC= 100°C|Continuous Drain Current, VGS@ 10V<br>~~ne~~|21<br>~~ne~~||
|IDM|Pulsed Drain Current<br>~~ne~~<br>~~a~~|120<br>~~ne~~<br>~~a~~||
|PD@TC= 25°C|Power Dissipation<br>~~ne~~<br>~~a~~<br>~~LO~~|48<br>~~ne~~<br>~~a~~<br>~~LO~~|W<br>~~ne~~<br>~~LO~~|
||Linear Derating Factor<br>~~a~~|0.32<br>~~a~~|W/°C<br>~~a~~|
|VGS|Gate-to-Source Voltage|± 20|V|
|EAS (Thermally limited)|Single Pulse Avalanche Energy|29|mJ<br>~~a~~|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value<br>~~a~~|46<br>~~a~~||
|IAR|Avalanche Current<br>~~a~~|See Fig.12a, 12b, 15, 16<br>~~a~~<br>~~po~~|A<br>~~a~~|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~po~~||mJ<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case )<br>~~po~~||
|~~po~~|Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~i~~|10 lbf in (1.1N m)<br>~~po~~<br>~~i~~|~~po~~<br>~~i~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**<br>~~Gs~~|**Typ.**<br>~~es~~|**Max. **<br>~~sd~~|**Units**<br>~~sd~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~ee~~|55<br>~~ee~~<br>~~Gs~~<br>~~es~~|–––<br>~~ee~~<br>~~es~~<br>~~ed~~|–––<br>~~ee~~<br>~~sd~~|V<br>~~ee~~<br>~~sd~~|VGS= 0V, ID= 250µA<br>~~ee~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~ee~~<br>~~es~~|–––<br>~~ee~~<br>~~Gs~~<br>~~es~~<br>~~es~~<br>~~Gs~~|0.053<br>~~ee~~<br>~~es ~~<br>~~es~~<br>~~ed~~<br>~~Os~~|–––<br>~~ee~~<br> ~~sd~~<br>~~es~~|V/°C<br>~~ee~~<br>~~sd~~<br>~~es~~|Reference to 25°C, ID= 1mA<br>~~ee~~<br>~~es~~<br>~~©~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~ee~~|–––<br>~~es ~~<br>~~ee~~<br>~~Gs~~<br>~~Gs~~|19<br> ~~ed~~<br>~~ee~~<br>~~Os~~<br>~~es~~|24.5<br>~~ee~~<br>~~Gs~~|mΩ<br>~~ee~~|VGS= 10V, ID= 18A<br>~~ee~~<br>~~©~~|
|VGS(th)|Gate Threshold Voltage<br>~~ee~~<br>~~ee~~|2.0<br>~~ee~~<br>~~Gs ~~<br>~~ee~~<br>~~Gs~~<br>~~es~~|–––<br>~~ee~~<br> ~~Os~~<br>~~ee~~<br>~~es~~<br>~~ed~~|4.0<br>~~ee~~<br>~~ee~~<br>~~Gs~~|V<br>~~ee~~<br>~~ee~~|VDS= VGS, ID= 250µA<br>~~ee~~<br>~~©~~<br>~~ee~~|
|gfs|Forward Transconductance<br>~~ee~~<br>~~es~~|16<br>~~ee~~<br>~~Gs ~~<br>~~es~~<br>~~es~~|–––<br>~~ee~~<br> ~~es ~~<br>~~es~~<br>~~ed~~|–––<br>~~ee~~<br> ~~Gs~~<br>~~es~~|S<br>~~ee~~<br>~~es~~|VDS= 15V, ID= 18A<br>~~ee~~<br>~~es~~|
|IDSS<br>~~Ce~~|Drain-to-Source Leakage Current<br>~~SO~~<br>~~Ce~~|–––<br>~~es ~~<br>~~SO~~|–––<br> ~~ed~~<br>~~SO~~|20<br>~~SO~~|µA<br>~~SO~~|VDS= 55V, VGS= 0V<br>~~SO~~|
|||–––<br>~~SO~~<br>~~FT|~~|–––<br>~~SO~~<br>~~FT|~~|250<br>~~SO~~<br>~~FT|~~||VDS= 55V, VGS= 0V, TJ= 125°C<br>~~SO~~|
|IGSS<br>~~Ce~~|Gate-to-Source Forward Leakage<br>~~SO~~<br>~~Ce~~|–––<br>~~SO~~<br>~~FT|~~|–––<br>~~SO~~<br>~~FT|~~|200<br>~~SO~~<br>~~FT|~~|nA<br>~~SO~~|VGS= 20V<br>~~SO~~|
||Gate-to-Source Reverse Leakage<br>~~Ce~~|–––<br>~~FT|~~<br>~~ee~~|–––<br>~~FT|~~<br>~~es~~|-200<br>~~FT|~~||VGS= -20V|
|Qg<br>~~Ce~~|Total Gate Charge<br>~~Ce~~<br>~~es~~<br>~~ee~~|–––<br>~~FT|~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|18<br>~~FT|~~<br>~~es~~<br>~~es~~<br>~~ee~~|27<br>~~FT|~~<br>~~es~~|nC|ID= 18A<br>VDS= 44V<br>VGS= 10V<br>~~©~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee ~~<br>~~es~~<br>~~**ee**~~|5.3<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~ee~~|–––<br>~~**ee**~~<br>~~ee~~|7.0<br>~~ee~~<br>~~es~~<br>~~es~~|–––|||
|td(on)|Turn-On DelayTime<br>~~ee~~<br>~~es~~|–––<br>~~**ee** ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|10<br> ~~ee~~<br>~~es~~<br>~~es~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|ns|VGS= 10V<br>VDD= 28V<br>ID= 18A<br>RG= 24.5Ω<br>~~©~~|
|tr|Rise Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|40<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~|26<br> ~~ee~~<br>~~es~~<br>~~ee~~|–––<br>~~es~~|||
|tf|Fall Time<br>~~es~~|–––<br>~~ee ~~<br>~~es~~|24<br> ~~ee~~<br>~~es~~|–––<br>~~es~~|||
|LD|Internal Drain Inductance<br>~~es~~<br>~~H+~~|–––<br>~~es~~<br>~~H+~~|4.5<br>~~es~~<br>|–––<br>~~es~~<br>~~4~~|nH<br>||Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G|
|LS|Internal Source Inductance<br>~~es~~<br>~~H+~~|–––<br>~~es~~<br>~~H+ ~~<br>~~ee~~|7.5<br>~~es~~<br> <br>~~ee~~|–––<br>~~es~~<br> ~~4~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~<br>~~ee~~<br>~~ee~~|740<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|140<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|74<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|450<br> ~~ee~~<br>~~es~~<br>~~ee~~<br>~~**ee**~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~es~~|–––<br>~~ee ~~<br>~~es~~<br>~~**ee**~~|110<br> ~~ee~~<br>~~es~~<br>~~**ee**~~|–––<br>~~es~~||VGS= 0V,  VDS= 44V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~es~~|–––<br>~~**ee**~~|180<br>~~**ee**~~|–––||VGS= 0V, VDS= 0V to 44V<br>~~@~~|



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1000<br>ror isv H+<br>soy a eeHH ee Ht|<br>100<br>rove Lome UELLL<br>ey =: ee<br>Bottom 4svee——e tT] | TI<br>10 A e ee<br>1<br>a y 4.5V i i<br>60µs PULSE WIDTH<br>0.1 PEE SS SS Tj = 25°C ee mail<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>EePP eTes eeTdee eeyt<br>100 | | | TT<br>— T — = 175°C = —————<br>J<br>a >_< ss—<br>10<br>ey 2 es es es es eee<br>TJ = 25°C<br>1 | fi | |<br>e e<br>VDS = 25V<br>0 | tT LT 60µs PULSE WIDTH<br>4 5 6 7 8 9 10<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>Top asv  aHF| ee<br>7.0V | HET<br>100 oy ==> Tee<br>Bottom 4.5v -t}-—pgeerr——ey<br>PETA<br>10<br>Sg get ee 4.5V |<br>60µs PULSE WIDTH<br>Tj = 175°C<br>1 Sia Atlin eTT| |<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>30<br>TJ = 175°C<br>25 | | =—_—«—<..<br>V<br>20 /<br>|<br>15 TJ = 25°C<br>10<br>5<br>VDS = 8.0V<br>380µs PULSE WIDTH<br>0<br>0 10 20 30 40<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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1200 20<br>VGS   = 0V,       f = 1 MHZ ID= 18A<br>Ciss   = C gs + Cgd,  C ds SHORTED<br>1000 T— CCrss  oss   = C= Cds gd + Cgd ] 16 es VVDS= 28VVDS= 11VDS= 44V e<br>800<br>Ciss<br>12<br>600<br>/)<br>8<br>400 | i Ah<br>Coss 4<br>200<br>FOR TEST CIRCUIT<br>Se y ZE EE<br>Crss SEE FIGURE 13<br>SS S} 0<br>0<br>1 10 100 0 5 10 15 20 25 30<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 1000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>100.0 100<br>TJ = 175°C<br>10.0 10<br>100µsec<br>1.0 es ee ee TJ = 25°C ee 1 T r SPRITE<br>1msec<br>Tc = 25°C<br>VGS = 0V Tj = 175°C 10msec<br>Single Pulse<br>0.1 ee Ae 0.1 et<br>0.0 0.5 1.0 1.5 2.0 1 10 100 1000<br>VSD, Source-toDrain Voltage (V) VDS  , Drain-toSource Voltage (V)<br>ISD, Reverse Drain Current (A)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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30 2.5<br>ID = 18A<br>25 VGS = 10V<br>S O F E<br>2.0<br>20<br>P NET p epe<br>15 1.5<br>H EN HEHE<br>10<br>1.0<br>C reer) HEHEHE<br>5<br>) DER<br>0 0.5<br>S a e e ae<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br>TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>D = 0.50<br>1<br>0.20<br>0.10<br>0.05<br>0.1 0.020.01 τ J τ J R1 R1 R2 R2 R3R3 τ C τ Ri (°C/W)   1.100       0.000174  τ i (sec)<br>= ee τ 1 τ 1 τ 2 τ 2 Se τ 3 τ 3 1.601       0.000552<br>0.01 Ci=  τ i / Ri 0.418       0.007193<br>SINGLE PULSE Ci i / Ri<br>( THERMAL RESPONSE ) Notes:<br>1. Duty Factor D = t1/t2<br>2. Peak Tj = P dm x Zthjc + Tc<br>0.001 ee ee eee<br>1E-006 1E-005 0.0001 0.001 0.01<br>t1 , Rectangular Pulse Duration (sec)<br>ID  , Drain Current (A)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>f<br>20VVGS<br>tp 0.01 Ω<br>P ly<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>tp<br>**----- End of picture text -----**<br>


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IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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QG<br>QGS QGD<br>VG<br>Charge<br>=<br>**----- End of picture text -----**<br>


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Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>+<br>The D.U.T. | -VDS<br>VGS<br>ing<br>3mA<br>ae IG | ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 6 

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120<br>                 I<br>D<br>TOP         2.0A<br>100<br>               3.5A<br>BOTTOM   18A<br>80 a a a<br>N CE<br>60<br>P EE<br>40 N EN Eb<br>20 T ESN<br>0 || |SN.<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.5<br>4.0<br>T EE<br>3.5<br>P SL<br>ID = 250µA<br>3.0<br>2.5<br>L LL ENGL<br>2.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>SUE EEE ERS<br>TJ , Temperature ( °C )<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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100<br>Duty Cycle = Single Pulse<br>Allowed avalanche Current vs<br>10 0.01 avalanche  pulsewidth,  tav<br>assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>0.05<br>case should Tj be allowed to<br>0.10 exceed Tjmax<br>1<br>|<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>30 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>25 ID = 18A   Purely a thermal phenomenon and failure occurs at a<br>y t     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>20 E NNose 2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>3. Equation below based on circuit and waveforms shown in<br>15 I NNES<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>10 C L LINNGTE     avalanche pulse.<br>5. BV = Rated breakdown voltage (1.3 factor accounts for<br>    voltage increase during avalanche).<br>5 L T ANN 6. Iav = Allowable avalanche current.<br>7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>L TE ENN     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>  ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>Starting TJ , Junction Temperature (°C)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL cS<br>OR RECTIFIER IRFR120 DATE CODEP =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34 P =  DESIGNATES LEAD-FREE<br>ASSEMBLYLOT CODE e a t PRODUCT QUALIFIED TO THECONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

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1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/datasheets/data/<br>auirfr4105z.pdf<br>2. For the most current drawing please refer to IR website at http://www.irf.com/package/<br>www.irf.com 9<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR aT<br>PART NUMBER<br>INTERNATIONAL cS<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR P1194) P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/datasheets/data/ auirfr4105z.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 10 www.irf.com 

**==> picture [281 x 242] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>eeooooo\ | oeoo/J<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CeCe, OI) ,<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Coss eff. is a fixed capacitance that gives the same charging time 

Repetitive rating;  pulse width limited by max. junction temperature. (See fig. 11). 

as Coss while VDS is rising from 0 to 80% VDSS . 

- @ Limited by TJmax, starting TJ = 25°C, L = 0.18mH ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 18A, VGS =10V. Part not avalanche performance. 

   - ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

recommended for use above this value. 

- © This value determined from sample failure population. 100% tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

11 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR4105ZTRPBF/power-mosfet-n-channel-55-v-30-a-00245-ohm-to)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr4105ztrpbf/mosfet-n-ch-55v-30a-to-252aa/dp/2725969RL)
---

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