# Power MOSFET, N Channel, 55 V, 27 A, 0.045 ohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725968RL/)

**URL**: https://novapart.co/products/IRFR4105TRPBF/power-mosfet-n-channel-55-v-27-a-0045-ohm-to-252aa
**SKU**: IRFR4105TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.3680
**Stock**: 1000+
**Lead Time**: 85 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Powe

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 68W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 55V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 27A |
| Drain Source On State Resistance | 0.045ohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725968RL/)

## PD - 95550A IRFR4105PbF IRFU4105PbF 

Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated Lead-Free 

## **Description** 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. 

The D-PAK is designed for surface mounting using vapor  phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications.  Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. 

HEXFET[®] Power MOSFET 

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D<br>VDSS = 55V<br>R  = 0.045Ω<br>DS(on)<br>G<br>ID = 27A<br>S<br>_<br>   D-PAK    I-PAK<br>TO-252AA TO-251AA<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

|a<br>~~—————————~~|**Parameter**<br>a<br>~~—————————~~|**Max.**<br>~~—————————~~|**Max.**<br>~~—————————~~|**Units**<br>~~oe~~|
|---|---|---|---|---|
|ID@ TC= 25°C<br>~~—————————~~|Continuous Drain Current, VGS@ 10V<br>~~—————————~~|27<br>@<br>~~—————————~~||A<br>~~_~~<br>~~oe~~<br>~~ee~~|
|ID@ TC= 100°C<br>~~—————————~~<br>~~——————~~|Continuous Drain Current, VGS@ 10V<br>~~—————————~~<br>~~——————~~|19<br>~~—————————~~|||
|IDM<br>~~—————————~~<br>~~——————~~<br>~~rs~~|Pulsed Drain Current<br>~~—————————~~<br>~~——————~~<br>~~ee~~|100<br>~~—————————~~<br>~~ee~~|||
|PD@TC= 25°C<br>~~—————————~~<br>~~——————~~<br>~~rs~~<br>~~—..-~~|Power Dissipation<br>~~—————————~~<br>~~——————~~<br>~~ee~~<br>~~—..-~~<br>~~<_<~~|68<br>~~—————————~~<br>~~ee~~<br>~~<_<~~||W<br>~~oe~~<br>~~ee~~|
|~~—————————~~<br>~~——————~~<br>~~rs~~<br>~~—..-~~<br>~~——————~~|Linear DeratingFactor<br>~~—————————~~<br>~~——————~~<br>~~ee~~<br>~~—..-~~<br>~~<_<~~<br>~~——————~~|0.45<br>~~—————————~~<br>~~ee~~<br>~~<_<~~||W/°C<br>~~oe~~<br>~~ee~~<br>~~—~~|
|VGS<br>~~——————~~<br>~~rs~~<br>~~—..-~~<br>~~——————~~|Gate-to-Source Voltage<br>~~——————~~<br>~~ee~~<br>~~—..-~~<br>~~<_<~~<br>~~——————~~|± 20<br>~~ee~~<br>~~<_<~~||V<br>~~ee~~<br>~~—~~|
|EAS<br>~~rs~~<br>~~—..-~~<br>~~——————~~|Single Pulse Avalanche Energy<br>~~ee~~<br>~~—..-~~<br>~~<_<~~<br>~~——————~~|65<br>~~ee~~<br>~~<_<~~||mJ<br>~~ee~~<br>~~—~~|
|IAR<br>~~rs~~<br>~~——————~~<br>~~—~~|Avalanche Current<br>~~ee~~<br>~~——————~~<br>~~—a~~|16<br>~~ee~~<br>~~a~~||A<br>~~ee~~<br>~~—~~|
|EAR<br>~~——————~~<br>|Repetitive Avalanche Energy<br>~~——————~~<br>~~a~~|6.8<br>~~a~~||mJ<br>~~—~~|
|dv/dt<br>~~——————~~<br>~~a~~|Peak Diode Recoverydv/dt<br>~~——————~~<br>~~a~~|5.0||V/ns<br>~~—~~|
|TJ<br>TSTG<br>~~a~~<br>~~ee~~|Operating Junction and<br>Storage Temperature Range<br>~~a~~|-55  to + 175||°C|
|~~ee~~|SolderingTemperature, for 10 seconds|300(1.6mm from case)|||
|**Thermal Resistance**<br>~~ee~~|||||
||**Parameter**|**Typ.**|**Max.**|**Units**|
|RθJC|Junction-to-Case|–––|2.2|°C/W|
|RθJA|Junction-to-Ambient (PCB mount) **|–––|50||
|RθJA|Junction-to-Ambient|–––|110||



## **Thermal Resistance** 

||**Parameter**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|
|RθJC|Junction-to-Case|–––|2.2||
|RθJA|Junction-to-Ambient (PCB mount) **|–––|50|°C/W|
|RθJA|Junction-to-Ambient|–––|110||
|www.irf.com||||1|



www.irf.com 

## IRFR/U4105PbF 

## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

|~~RseG~~<br>~~a~~|**Parameter**<br>~~eG~~<br>~~rn~~|**Min.**<br>~~eG~~<br>~~ss~~|**Typ. **<br>~~eG~~<br>~~ss~~|**Max.**<br>~~eG~~<br>~~ss~~|**Units**<br>~~eG~~|**Conditions**<br>~~eG~~|
|---|---|---|---|---|---|---|
|V(BR)DSS<br>~~RseG~~<br>~~a~~<br>~~PR~~|Drain-to-Source Breakdown Voltage<br>~~eG~~<br>~~rn~~<br>|55<br>~~eG~~<br>~~ss~~<br>~~rs~~<br>|–––<br>~~eG~~<br>~~ss~~<br>~~rs~~<br>|–––<br>~~eG~~<br>~~ss~~<br>|V<br>~~eG~~<br>|VGS= 0V, ID= 250µA<br>~~eG~~<br>|
|∆V(BR)DSS/∆TJ<br>~~a~~<br>a~~ee~~<br>~~PR~~|Breakdown Voltage Temp. Coefficient<br>~~rn~~<br>~~ee~~<br>|–––<br>~~ss~~<br>~~ee~~<br>~~rs~~<br>|0.052<br>~~ss~~<br>~~ee~~<br>~~rs~~<br>|–––<br>~~ss~~<br>~~ee~~<br>|V/°C<br>~~ee~~<br>|Reference to 25°C, ID= 1mA<br>~~ee~~<br>|
|RDS(on)<br>~~PReseG~~|Static Drain-to-Source On-Resistance<br>~~eG~~|–––<br>~~rs~~<br>~~eG~~|––– <br>~~rs~~<br>~~eG~~|0.045<br>~~eG~~|~~eG~~|VGS= 10V, ID= 16A<br>~~eG~~|
|VGS(th)<br>~~PReseG~~|Gate Threshold Voltage<br>~~eG~~|2.0<br>~~rs~~<br>~~eG~~|–––<br>~~rs~~<br>~~eG~~|4.0<br>~~eG~~|V<br>~~eG~~|VDS= VGS, ID= 250µA<br>~~eG~~|
|gfs<br>~~eseG~~<br>~~ss~~|Forward Transconductance<br>~~eG~~<br>~~ss~~<br>~~|~~|6.5<br>~~eG~~<br>~~ss~~<br>~~|~~|–––<br>~~eG~~<br>~~ss~~<br>|–––<br>~~eG~~<br>~~ss~~<br>~~LE~~<br>|S<br>~~eG~~<br>~~ss~~<br>~~LE~~<br>|VDS= 25V, ID= 16A<br>~~eG~~<br>~~ss~~<br>~~LE~~<br>|
|IDSS<br>~~ee~~<br>~~———————————————~~|Drain-to-Source Leakage Current<br>~~ee~~<br>~~|~~<br>~~———————————————~~|–––<br>~~ee~~<br>~~|||~~|–––<br>~~ee~~<br>~~||~~|25<br>~~ee~~<br>~~LE~~<br>~~||~~|µA<br>~~ee~~<br>~~LE~~<br>~~Po~~<br>~~———————————————~~|VDS= 55V, VGS= 0V<br>~~ee~~<br>~~LE~~<br>~~Po~~|
|||–––<br>~~ee~~<br>~~|||~~<br>~~———————————————~~|–––<br>~~ee~~<br>~~||~~<br>~~———————————————~~|250<br>~~ee~~<br>~~LE~~<br>~~||~~<br>~~———————————————~~||VDS= 44V, VGS= 0V, TJ= 150°C<br>~~ee~~<br>~~LE~~<br>~~Po~~<br>~~———————————————~~|
|~~———————————————~~<br>~~es~~<br>~~a~~|Gate-to-Source Forward Leakage<br>~~|~~<br>~~———————————————~~<br>~~es~~|–––<br>~~| ~~<br>~~———————————————~~|–––<br><br>~~———————————————~~|100<br>~~LE~~<br><br>~~———————————————~~|nA<br>~~LE~~<br><br>~~———————————————~~<br>~~ee~~|VGS= 20V<br>~~LE~~<br><br>~~———————————————~~<br>~~ee~~|
||Gate-to-Source Reverse Leakage<br>~~———————————————~~<br>~~es~~|–––<br>~~———————————————~~|–––<br>~~———————————————~~|-100<br>~~———————————————~~||VGS= -20V<br>~~———————————————~~<br>~~ee~~|
|Qg<br>~~———————————————~~<br>~~es~~<br>~~a~~|Total Gate Charge<br>~~———————————————~~<br>~~es~~|–––<br>~~———————————————~~|–––<br>~~———————————————~~|34<br>~~———————————————~~|nC<br>~~———————————————~~<br>~~ee~~|ID= 16A<br>VDS= 44V<br>VGS= 10V, See Fig. 6 and 13<br>~~———————————————~~<br>~~ee~~<br>~~oe)~~|
|Qgs<br>~~es~~<br>~~a~~<br>a~~ee~~<br>~~es~~|Gate-to-Source Charge<br>~~es~~<br>~~ee~~|–––<br>~~ee~~|–––<br>~~ee~~|6.8<br>~~ee~~|||
|Qgd<br>~~es~~<br>~~eses~~|Gate-to-Drain("Miller")Charge<br>~~es~~|–––<br>~~es~~|–––<br>~~es~~|14<br>~~es~~|||
|td(on)<br>~~es~~<br>~~eses~~<br>es~~ee~~|Turn-On Delay Time<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|7.0<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|ns|VDD= 28V<br>ID= 16A<br>RG= 18Ω<br>RD= 1.8Ω,See Fig. 10<br>~~oe)~~<br>~~oe)~~|
|tr<br>~~eses~~<br>es~~ee~~|Rise Time<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|49<br>~~es~~<br>~~ee~~|–––<br>~~es~~<br>~~ee~~|||
|td(off)<br>es~~ee~~<br>Se<br>~~ee~~|Turn-Off Delay Time<br>~~ee~~<br>Se<br>~~ee~~|–––<br>~~ee~~|31<br>~~ee~~|–––<br>~~ee~~|||
|tf<br>~~ee~~|Fall Time<br>~~ee~~|–––|40|–––|||
|LD<br>~~ee~~|Internal Drain Inductance<br>~~ee~~|–––|4.5 –––|–––|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact<br>S<br>D<br>G<br>~~oe)~~|
|LS<br>~~Rs~~|Internal Source Inductance|–––|7.5|–––|||
|Ciss<br>~~Rs~~<br>ee~~ee~~<br>es|Input Capacitance<br>~~ee~~<br>|–––<br>~~ee~~<br>ee<br>|700<br>~~ee~~<br>ee|–––<br>~~ee~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ = 1.0MHz, See Fig. 5<br>@|
|Coss<br>~~Rs~~<br>ee~~ee~~<br>es|Output Capacitance<br>~~ee~~<br>ee|–––<br>~~ee~~<br>ee<br>ee|240<br>~~ee~~<br>ee|–––<br>~~ee~~|||
|Crss<br>ee~~ee~~<br>es|Reverse Transfer Capacitance<br>~~ee~~<br>ee|–––<br>~~ee~~<br>ee<br>ee|100<br>~~ee~~<br>ee|–––<br>~~ee~~|||



## **Notes:** 

o) Repetitive rating;  pulse width limited by max. junction temperature. ( See fig. 11 ) 

VDD = 25V, starting TJ = 25°C, L = 410µH 

- RG = 25Ω, IAS = 16A. (See Figure 12) 

   - ISD ≤ 16A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 

## Pulse width ≤ 300µs; duty cycle ≤ 2% 

Calculated continuous current based on maximum allowable junction temperature; Package limitation current = 20A 

This is applied for I-PAK, Ls of D-PAK is measured between lead and center of die contact 

Uses IRFZ34N data and test conditions 

- **   When mounted on 1" square PCB (FR-4 or G-10 Material ) . 

- For recommended footprint and soldering techniques refer to application note #AN-994 

www.irf.com 

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## IRFR/U4105PbF 

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1000                    VGS 1000                    VGS<br> TOP           15V  TOP           15V<br>                   10V                    10V<br>                   8.0V                    8.0V<br>                   7.0V                    7.0V<br>                   6.0V                    6.0V<br>                   5.5V                    5.5V<br>100                    5.0V BOTTOM   4.5V Ay | ee | TT 100                    5.0V BOTTOM   4.5V ON<br>Pe ww all<br>10 10<br> 4.5V<br> 4.5V<br>peau amet Gentil PW citi nena tl<br>1 ZO | | 1 A<br> 20µs PULSE WIDTH  20µs PULSE WIDTH<br>0.1 co cre  T   = 25°CC A 0.1 Pri Trp  T   = 175°CC<br>0.1 1 10 100 0.1 1 10 100<br>V     , Drain-to-Source Voltage (V)DS V     , Drain-to-Source Voltage (V)DS<br>Fig 1.   Typical Output Characteristics Fig 2.   Typical Output Characteristics<br>100 a 2.4 I    = 26AD<br>2.0<br>i T  = 25°CJ a ae ><br>A EEE A<br>Sar  aa T  = 175°CJ n 1.6 Pa<br>10 WIa2 6eeee T eetpee eee eee 1.2 EE AT<br>=4 eepe<br>0.8<br>a tot<br>Cayttp 0.4 TTLAHTTLTHTATATl<br> V     = 25VDS<br>1 4 poy 5  fpr 6 7  20µs PULSE WIDTH8 9 10A 0.0-60 P -40 TET -20 0 20 TE 40 E 60 EE 80 100 E 120 V      = 10V EE GS140 160 180<br>V     , Gate-to-Source Voltage (V)GS T   , Junction Temperature (°C)J<br>I   , Drain-to-Source Current (A)D I   , Drain-to-Source Current (A)D<br>(Normalized)<br>D<br>I   , Drain-to-Source Current (A) DS(on)<br>R           ,  Drain-to-Source On Resistance<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

**Fig 4.** Normalized On-Resistance Vs. Temperature 

## www.irf.com 

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## IRFR/U4105PbF 

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1200<br>V      = 0V,         f = 1MHzGS<br>TT] C      = C     + C     ,   C     SHORTEDiss         gs         gd         ds<br>1000 Ciss C      = CC      = C     + Crss         gdoss        ds         gd<br>NS 4ee ee ee<br>800<br>LSS Coss<br>AOE Sl<br>600<br>NOT<br>400 RN<br>C rss<br>Nea<br>ae<br>200 SS<br>0 |a<br>1 10 100<br>V     , Drain-to-Source Voltage (V)DS<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br>


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20<br>I    = 16AD<br>4 V      = 44VDS<br>V      = 28VDS<br>16<br>P| a<br>12 Fe}<br>4} WApe<br>8 PtLK<br>nn 4<br>rT |CATT<br>4 a TT<br>[<br> FOR TEST CIRCUIT<br>0 Anefp     SEE FIGURE 13 ot<br>0 10 20 30 40<br>Q   , Total Gate Charge (nC)G<br>GS<br>V     , Gate-to-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Fig 5.** Typical Capacitance Vs. Drain-to-Source Voltage 

**Fig 6.** Typical Gate Charge Vs. Gate-to-Source Voltage 

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1000 1000<br> OPERATION IN THIS AREA LIMITED<br>                       BY RDS(on)<br>100 ee 100 A/|<br>10µs<br>T  = 175°C<br>J<br>p f | anna aaa<br>T  = 25°CJ 100µs<br>10 10<br>A f | I<br>fff h S S ee ee 1ms eee<br>ie eee T     = 25°CC eee eel<br>T     = 175°CJ<br>1 Ae | e e ee V      = 0VGS A 1 E  Single Pulse el r<br>0.4 0.8 1.2 1.6 2.0 1 10 100<br>V     , Source-to-Drain Voltage (V)SD V     , Drain-to-Source Voltage (V)DS<br>I   , Drain Current (A)D<br>I     , Reverse Drain Current (A)SD<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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## IRFR/U4105PbF 

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30<br>LIMITED BY PACKAGE<br>25 Pts | | {| Ves<br>Pt yey ft tt ET ; DUT.<br>20 PE tT PS Tt Tt Ac t -<br>ERR eeNERe<br>15 Pt tT e tT PNET 4 5.0N ≤ 1<br>≤ 0.1 %<br>Pt tT Tt tT TXT Dayar<br>10 Pt tee eT tT ET TN °<br>Pt ey tty TT IN Fig 10a.   Switching Time Test Circuit<br>5 PT tT TTT eT tT VDS<br>90%<br>pt tT tt tT TT TY }<br>0 PTET ET ETT ttt |<br>25 50 75 100 125 150 175<br>T   , Case TemperatureC (  C)° ||<br>10%<br>VGS | |<br>Fig 9.   Maximum Drain Current Vs. t lao d(on) tr >! t <p d(off) tf<br>Case Temperature<br>Fig 10b.   Switching Time Waveforms<br> 10 —— eee eeee<br>————ee<br>poTT<br>a a<br>D = 0.50<br> 1 e ase<br>ee 0.20 Seerr——_—aa0tl ane<br>0.10<br>e e en) nd<br>0.05 PDM<br>0.1 0.02 SINGLE PULSE<br>CS 0.01 S S (THERMAL RESPONSE) ea L EELe t1<br>t2<br>po Notes:<br>1. Duty factor D = t   / t1 2<br>ei 2. Peak T J = P DM x  Z thJC + TC<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1<br>t  , Rectangular Pulse Duration (sec)1<br>I   , Drain Current (A)D<br>thJC<br>(Z        )<br>Thermal Response<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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## IRFR/U4105PbF 

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15V<br>L DRIVER<br>VDS<br>RG D.U.T +<br>- [V][DD]<br>IAS<br>10V Jb<br>tp 0.01Ω<br>**----- End of picture text -----**<br>


**Fig 12a.** Unclamped Inductive Test Circuit 

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V(BR)DSS<br>~<— tp —><br>/ al<br>/ \<br>IAS<br>**----- End of picture text -----**<br>


**Fig 12b.** Unclamped Inductive Waveforms 

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f QG<br>QGS QGD<br>VG<br>ake = _.<br>Charge<br>**----- End of picture text -----**<br>


**Fig 13a.** Basic Gate Charge Waveform 

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140<br>                    I D<br>NR<br>TOP            6.5A<br>120 Nt                    11A<br>BOTTOM    16A<br>PX | tT Lp<br>PNP<br>100 eNEeeeeee<br>PIN<br>80 INE ENP EE [Et]<br>RN ON<br>60 P NINC ING<br>40 PPPoE NNNNAKt<br>20 PoPi teTr, AS NR<br>0 ee  V      = 25VDD ee ee ee a ee<br>25 50 75 100 125 150 175<br>Starting T  , Junction Temperature (°C)J<br>AS<br>E     ,   Single Pulse Avalanche Energy (mJ)<br>**----- End of picture text -----**<br>


**Fig 12c.** Maximum Avalanche Energy Vs. Drain Current 

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Current Regulator<br>Same Type as D.U.T.<br>50KΩ<br>12V .2µF<br>.3µF<br>+<br>D.U.T. -VDS<br>VGS<br>3mA<br>( |<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


**Fig 13b.** Gate Charge Test Circuit 

www.irf.com 

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## IRFR/U4105PbF 

## **Peak Diode Recovery dv/dt Test Circuit** 

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D.U.T + Circuit Layout Considerations<br>   •  Low Stray Inductance<br> •  Ground Plane<br> •  Low Leakage Inductance<br>(faa)       Current Transformer<br>| | -<br>+<br>- - +<br>Ke.<br>00)<br>RG •  dv/dt controlled by RG +<br>se •  Driver same type as D.U.T. - VDD<br>•  ISD controlled by Duty Factor "D"<br>•  D.U.T. - Device Under Test<br>**----- End of picture text -----**<br>


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O) Driver Gate Drive<br>P.W.<br>Period D =<br>es P.W. | Period _!<br>VGS=10V<br>( \<br>@ D.U.T. ISD Waveform<br>Reverse<br>Recovery Body Diode Forward<br>Current i Current di/dt JN<br>©) D.U.T. VDS Waveform Diode Recovery<br>dv/dt<br>VDD<br>ma<br>Re-Applied ai<br>Voltage Body Diode  Forward Drop<br>® Inductor Curent<br>a<br>Ripple  ≤ 5% ISD<br>* VGS = 5V for Logic Level Devices<br>**----- End of picture text -----**<br>


**Fig 14.** For N-Channel HEXFETS 

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## IRFR/U4105PbF 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL<br>LOT CODE 1234 RECTIFIER IRFU120 DATE CODE<br>ASSEMBLED ON WW 16, 1999 LOGO 916A YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>se | LINE A<br>Note: "P" in assembly line position ASSEMBLY e a t<br>indicates "Lead-Free" LOT CODE<br>OR<br>PART NUMBER<br>INTERNATIONAL ><br>RECTIFIER IRFU120 DATE CODE<br>LOGO TEAR Piss P =  DESIGNATES LEAD-FREE<br>12 34 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY e a t WEEK 16<br>LOT CODE<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>WITH ASSEMBLYLOT CODE 5678ASSEMBLED ON WW 19, 1999 INTERNATIONALRECTIFIERLOGO cs 56IRFU120919A78 DATE CODEWEEK 19YEAR 9 =  1999<br>IN THE ASSEMBLY LINE "A" |<br>LINE A<br>Note: position indicates "Lead-Free" "P" in assembly line  ASSEMBLYLOT CODE<br>PART NUMBER<br>INTERNATIONAL —_<br>RECTIFIER IRFU120 DATE CODE<br>LOGO P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 9 =  1999<br>ASSEMBLY WEEK 19<br>LOT CODE A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


**==> picture [61 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
www.irf.com<br>**----- End of picture text -----**<br>


9 

## IRFR/U4105PbF 

**==> picture [328 x 291] intentionally omitted <==**

**----- Start of picture text -----**<br>
TR TRR TRL<br>OOOO 9 © } oo OO h<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>  13 INCH<br>QY )<br>@ C9<br>16 mm | jk<br>**----- End of picture text -----**<br>


- NOTES : 1. OUTLINE CONFORMS TO EIA-481. 

Data and specifications subject to change without notice. International 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 1/05 

www.irf.com 

10 

Note:  For the most current drawings please refer to the IR website at: http://www.irf.com/package/ 

## **IMPORTANT NOTICE** 

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . 

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. 

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( **www.infineon.com** ). 

## **WARNINGS** 

Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR4105TRPBF/power-mosfet-n-channel-55-v-27-a-0045-ohm-to-252aa)
- [Request a quote for this part](https://novapart.co/quote/)
- [Supplier page](https://es.farnell.com/infineon/irfr4105trpbf/mosfet-n-ch-55v-27a-to-252aa/dp/2725968RL)
---

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