# Power MOSFET, N Channel, 40 V, 42 A, 5500 µohm, TO-252AA, Surface Mount

![Product image](https://novapart.co/image/farnell:2725967/)

**URL**: https://novapart.co/products/IRFR4104TRPBF/power-mosfet-n-channel-40-v-42-a-5500-ohm-to-252aa
**SKU**: IRFR4104TRPBF
**Manufacturer**: INFINEON
**Category**: Semiconductors - Discretes || FETs || Single MOSFETs
**Price**: €0.4510
**Stock**: 1000+
**Lead Time**: 113 days (indicative)

## Description

Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Pow

## Specifications

| Parameter | Value |
|---|---|
| Msl | MSL 1 - Unlimited |
| Svhc | No SVHC (25-Jun-2025) |
| No. Of Pins | 3Pins |
| Channel Type | N Channel |
| Product Range | HEXFET |
| Qualification | - |
| Power Dissipation | 140W |
| Transistor Mounting | Surface Mount |
| Rds(On) Test Voltage | 10V |
| Transistor Case Style | TO-252AA |
| Drain Source Voltage Vds | 40V |
| Operating Temperature Max | 175°C |
| Continuous Drain Current Id | 42A |
| Drain Source On State Resistance | 5500µohm |
| Gate Source Threshold Voltage Max | 4V |

## Datasheet

📄 [Download PDF](https://novapart.co/datasheet/farnell:2725967/)

PD - 95425B 

## IRFR4104PbF IRFU4104PbF 

## HEXFET[®] Power MOSFET 

## **Features** 

Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free 

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D<br>VDSS = 40V<br>R  = 5.5m Ω<br>DS(on)<br>G<br>ID = 42A<br>S<br>**----- End of picture text -----**<br>


## **Description** 

This HEXFET[®] Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design  are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 

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D-Pak I-Pak<br>IRFR4104PbF IRFU4104PbF<br>**----- End of picture text -----**<br>


## **Absolute Maximum Ratings** 

||**Parameter**|**Max.**|**Units**|
|---|---|---|---|
|ID@ TC= 25°C|Continuous Drain Current, VGS@ 10V(Silicon Limited)<br>~~ne~~|119<br>~~ne~~|A<br>~~ne~~<br>~~a~~|
|ID@ TC= 100°C <br>~~a~~|Continuous Drain Current, VGS@ 10V<br>~~ne~~<br>~~a~~|84<br>~~ne~~<br>||
|ID@ TC= 25°C<br>~~a~~|Continuous Drain Current, VGS@ 10V(Package Limited)<br>~~ne~~<br>~~a~~|42<br>~~ne~~<br>||
|IDM<br>~~a~~|Pulsed Drain Current<br>~~ne~~<br>~~aa~~|480<br>~~ne~~<br>~~a~~||
|PD@TC= 25°C<br>|Power Dissipation<br>~~ne~~<br>~~a~~<br>~~a~~|140<br>~~ne~~<br>~~a~~<br>~~a~~|W<br>~~ne~~<br>~~a~~<br>~~a~~|
||Linear Derating Factor<br>~~eS~~|0.95|W/°C|
|VGS|Gate-to-Source Voltage<br>~~eS~~|± 20|V|
|EAS (Thermally limited)|Single Pulse Avalanche Energy<br>~~eS~~|145|mJ|
|EAS(Tested )|Single Pulse Avalanche Energy Tested Value|310||
|IAR|Avalanche Current|See Fig.12a, 12b, 15, 16<br>~~po~~|A|
|EAR<br>~~po~~|Repetitive Avalanche Energy<br>~~po~~||mJ<br>~~po~~|
|TJ<br>TSTG<br>~~po~~|Operating Junction and<br>Storage Temperature Range<br>~~po~~|-55  to + 175<br>~~po~~|°C<br>~~po~~|
|~~po~~|Soldering Temperature, for 10 seconds<br>~~po~~|300 (1.6mm from case )<br>~~po~~||
|~~po~~|Mounting Torque, 6-32 or M3 screw<br>~~po~~<br>~~a~~|10 lbf in (1.1N m)<br>~~po~~<br>~~a~~|~~po~~<br>~~a~~|



HEXFET[®] is a registered trademark of International Rectifier. 

www.irf.com 

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## **Electrical Characteristics @ TJ = 25°C (unless otherwise specified)** 

||**Parameter**|**Min.**|**Typ.**<br>~~GO~~|**Max. **<br>~~ID~~|**Units**<br>~~OD~~|**Conditions**|
|---|---|---|---|---|---|---|
|V(BR)DSS|Drain-to-Source Breakdown Voltage<br>~~DO~~|40<br>~~DO~~|–––<br>~~DO~~<br>~~GO~~<br>~~DD~~|–––<br>~~DO~~<br>~~ID~~<br>~~DD~~|V<br>~~DO~~<br>~~OD~~<br>~~DD~~|VGS= 0V, ID= 250µA<br>~~DO~~|
|∆V(BR)DSS/∆TJ|Breakdown Voltage Temp. Coefficient<br>~~es~~|–––<br>~~es~~|0.032<br>~~GO~~<br>~~es~~<br>~~DD~~<br>~~GO~~|–––<br>~~ID~~<br>~~es~~<br>~~DD~~<br>~~GO~~|V/°C<br>~~OD~~<br>~~es~~<br>~~DD~~<br>~~GO~~|Reference to 25°C, ID= 1mA<br>~~es~~<br>~~CO~~|
|RDS(on)|Static Drain-to-Source On-Resistance<br>~~NR~~|–––<br>~~NR~~|4.3<br>~~DD~~<br>~~NR~~<br>~~GO~~<br>~~GD~~|5.5<br>~~DD~~<br>~~NR~~<br>~~GO~~<br>~~GD~~|mΩ<br>~~DD~~<br>~~NR~~<br>~~GO~~|VGS= 10V, ID= 42A<br>~~NR~~<br>~~CO~~|
|VGS(th)|Gate Threshold Voltage<br>~~NR~~<br>~~DO~~|2.0<br>~~NR~~<br>~~DO~~|–––<br>~~NR~~<br>~~GO~~<br>~~DO~~<br>~~GD~~<br>~~GO~~|4.0<br>~~NR~~<br>~~GO~~<br>~~DO~~<br>~~GD~~|V<br>~~NR~~<br>~~GO ~~<br>~~DO~~|VDS= VGS, ID= 250µA<br>~~NR~~<br> ~~CO~~<br>~~DO~~|
|gfs<br>~~Ne~~|Forward Transconductance<br>~~DD~~<br>~~Ne~~|58<br>~~DD~~|–––<br>~~GD~~<br>~~DD~~<br>~~GO~~|–––<br>~~GD~~<br>~~DD~~<br>~~OE~~|S<br>~~DD~~<br>~~OE~~|VDS= 10V, ID= 42A<br>~~DD~~<br>~~OE~~|
|IDSS<br>~~Ne~~|Drain-to-Source Leakage Current<br>~~Se~~<br>~~Ne~~|–––<br>~~Se~~|–––<br>~~GO~~<br>~~Se~~|20<br>~~Se~~<br>~~OE~~|µA<br>~~Se~~<br>~~OE~~|VDS= 40V, VGS= 0V<br>~~Se~~<br>~~OE~~|
|||–––<br>~~Se~~|–––<br>~~Se~~|250<br>~~Se~~<br>~~OE~~||VDS= 40V, VGS= 0V, TJ= 125°C<br>~~Se~~<br>~~OE~~|
|IGSS<br>~~Ne~~|Gate-to-Source Forward Leakage<br>~~Ne~~|–––|–––|200<br>~~OE~~|nA<br>~~OE~~|VGS= 20V<br>~~OE~~|
||Gate-to-Source Reverse Leakage<br>~~Ne~~|–––<br>~~fT~~|–––<br>~~fT~~|-200<br>~~OE~~<br>~~fT~~||VGS= -20V<br>~~OE~~|
|Qg<br>~~Ne~~|Total Gate Charge<br>~~Ne~~<br>~~es~~|–––<br>~~es~~|59<br>~~es~~|89<br>~~OE~~<br>~~es~~|nC<br>~~OE~~|VGS= 10V<br>ID= 42A<br>VDS= 32V<br>~~OE~~<br>~~®~~|
|Qgs|Gate-to-Source Charge<br>~~es~~<br>~~es~~|–––<br>~~es~~|19<br>~~es~~|–––<br>~~es~~|||
|Qgd|Gate-to-Drain("Miller")Charge<br>~~es~~|–––|24|–––|||
|td(on)|Turn-On DelayTime<br>~~es~~<br>~~es~~|–––<br>~~es~~|17<br>~~es~~|–––<br>~~es~~|ns|VDD= 20V<br>ID= 42A<br>RG= 6.8Ω<br>VGS= 10V<br>~~®~~<br>@|
|tr|Rise Time<br>~~es~~|–––<br>~~es~~|69<br>~~es~~|–––<br>~~es~~|||
|td(off)|Turn-Off DelayTime<br>~~es~~|–––<br>~~es~~|37<br>~~es~~|–––<br>~~es~~|||
|tf|Fall Time|–––|36|–––|||
|LD|Internal Drain Inductance<br>~~PS~~|–––<br>~~PS~~|4.5<br>~~PS~~|–––<br>~~PS~~|nH|Between lead,<br>6mm (0.25in.)<br>from package<br>and center of die contact|
|LS|Internal Source Inductance<br>~~Pe~~|–––<br>~~Pe~~|7.5<br>~~Pe~~|–––<br>~~Pe~~|||
|Ciss|Input Capacitance<br>~~es~~|–––<br>~~es~~|2950<br>~~es~~|–––<br>~~es~~|pF|VGS= 0V<br>VDS= 25V<br>ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|660<br>~~es~~|–––<br>~~es~~|||
|Crss|Reverse Transfer Capacitance<br>~~es~~|–––<br>~~es~~|370<br>~~es~~|–––<br>~~es~~|||
|Coss|Output Capacitance<br>~~es~~|–––<br>~~es~~|2130<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 1.0V,ƒ= 1.0MHz|
|Coss|Output Capacitance<br>~~es~~<br>~~ee~~|–––<br>~~es~~|590<br>~~es~~|–––<br>~~es~~||VGS= 0V,  VDS= 32V,ƒ= 1.0MHz<br>~~@~~|
|Cosseff.|Effective Output Capacitance<br>~~ee~~|–––|850|–––||VGS= 0V, VDS= 0V to 32V<br>~~@~~|



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1000<br>P e top 15V<br>HFFA eA 10V<br>eB) Zomsmil 8.0v<br>100<br>77aee | |<br>10 C ec TTIEe|<br>PE —_ 4.5V ——— | | | HH<br>60µs PULSE WIDTH<br>1 rn Shillime T Tj = 25°C e |<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 1.   Typical Output Characteristics<br>1000<br>S SS<br>TJ = 25°C<br>= = OESa —<br>p e a e T = 175°C<br>J<br>100<br>a e<br>10<br>a<br>FY VDS = 20V<br>60µs PULSE WIDTH<br>1<br>4 — 6 8 10<br>VGS, Gate-to-Source Voltage (V)<br>ID, Drain-to-Source Current (A)<br>) (Α<br>ID, Drain-to-Source Current<br>**----- End of picture text -----**<br>


**Fig 3.** Typical Transfer Characteristics 

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1000<br>P e op 15V<br>FFE ATH 10V<br>ea Zee BV<br>100<br>Y<br>4.5V<br>p r et<br>10 AcQe | IMTHIo|<br>PEE HH PEE EH<br>60µs PULSE WIDTH<br>1 Saline tt Tj = 175°C TTI |<br>0.10 11 1010 100100<br>VDS, Drain-to-Source Voltage (V)<br>Fig 2.   Typical Output Characteristics<br>120<br>100 P| TJ = 175°C |<br>————<br>p a t<br>80 |<br>60<br>T = 25°C<br>J<br>of A |<br>40<br>20 /| VDS = 10V<br>380µs PULSE WIDTH<br>0 J |_|<br>0 20 40 60 80 100<br>ID, Drain-to-Source Current (A)<br>Gfs, Forward Transconductance (S)<br>ID, Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 4.** Typical Forward Transconductance Vs. Drain Current 

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5000 20<br>VCGS  iss   = C = 0V,       f = 1 MHZgs + Cgd,  C ds SHORTED ID= 42A VDS= 32V<br>C  = C VDS= 20V<br>4000 rss   gd  16<br>Coss  = Cds + Cgd<br>a Ciss Ho s<br>3000 pe ET 12 LZ<br>8<br>2000<br>U T|<br>Coss 4<br>1000<br>Crss<br>S e APE<br>0<br>0<br>ee e = 0 20 40 60 80 100<br>1 10 100<br> QG  Total Gate Charge (nC)<br>VDS, Drain-to-Source Voltage (V)<br>Fig 5.   Typical Capacitance Vs. Fig 6.   Typical Gate Charge Vs.<br>Drain-to-Source Voltage Gate-to-Source Voltage<br>1000.0 10000<br>OPERATION IN THIS AREA<br>LIMITED BY R DS(on)<br>1000<br>100.0<br>T = 175°C<br>J<br>100<br>10.0 100µsec<br>TJ = 25°C 10<br>1msec<br>1.0<br>1<br>Tc = 25°C 10msec<br>Tj = 175°C<br>VGS = 0V Single Pulse<br>0.1<br>0.1<br>0 1 10 100 1000<br>0.0 0.5 1.0 1.5 2.0<br>VDS  , Drain-toSource Voltage (V)<br>VSD, Source-toDrain Voltage (V)<br>ISD, Reverse Drain Current (A)<br>VGS, Gate-to-Source Voltage (V)<br>C, Capacitance (pF)<br>ID,  Drain-to-Source Current (A)<br>**----- End of picture text -----**<br>


**Fig 7.** Typical Source-Drain Diode Forward Voltage 

**Fig 8.** Maximum Safe Operating Area 

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2.0<br>120<br>LIMITED BY PACKAGE ID = 42A<br>VGS = 10V<br>100<br>80 y A ee 1.5 FH LELLEEEE Ee<br>4 “ Ey tLe<br>60<br>sy pr Xx |<br>40 1.0<br>aaa BEREDZAGREEE<br>20<br>0 0.5<br>25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180<br> TC , Case Temperature (°C) TJ , Junction Temperature (°C)<br>Fig 9.   Maximum Drain Current Vs. Fig 10.   Normalized On-Resistance<br>Case Temperature Vs. Temperature<br>10<br>ee 0 | | ee<br>a ee ee ee ee ee ee ee ee el<br>1 S e<br>D = 0.50<br>ee ee a es ee ee ee ET<br>0.20<br>0.1 — 0.10 m r R1 R1 R2 R2 Ri (°C/W)    Het  τ i (sec)<br>0.05 τ J τ J τ C τ 0.5067      0.000414<br>FP [e] 0.02 [rrr] τ 1 τ 1 τ 2 τ 2 0.5428      0.004081 |<br>0.01 = e ee) 0.01 SHie Ci=  T τ i / Ri T | ||<br>Ci i / Ri<br>Notes:<br>SINGLE PULSE 1. Duty Factor D = t1/t2<br>0.001 — | | | ( THERMAL RESPONSE ) 1 ee 2. Peak Tj = P dm x Zthjc + Tc 1<br>1E-006 1E-005 0.0001 0.001 0.01 0.1<br>t1 , Rectangular Pulse Duration (sec)<br>RDS(on) , Drain-to-Source On Resistance                        (Normalized)<br>ID , Drain Current (A)<br>Thermal Response ( Z thJC )<br>**----- End of picture text -----**<br>


**Fig 11.** Maximum Effective Transient Thermal Impedance, Junction-to-Case 

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15V<br>VDS L DRIVER<br>RG D.U.T +<br>- [V][DD]<br>IAS A<br>4<br>20VVGS<br>tp 0.01 Ω<br>Fig 12a.  e  Unclamped Inductive Test Circuit h.<br>V(BR)DSS<br>— tp<br>IAS 7a<br>Fig 12b.   Unclamped Inductive Waveforms<br>QG<br>QGS QGD<br>VG<br>4<br>Charge<br>:<br>Fig 13a.   Basic Gate Charge Waveform<br>Current Regulator<br>Same Type as D.U.T.<br>ap<br>50K Ω<br>12V .2 µ F<br>.3 µ F<br>The D.U.T. | +-VDS<br>VGS<br>ue<br>3mA<br>oe<br>IG ID<br>Current Sampling Resistors<br>**----- End of picture text -----**<br>


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600<br>                 I<br>D<br>TOP          9.2A<br>500<br>               13A<br>BOTTOM   42A<br>400 SN ame en<br>300<br>A CEC<br>200<br>N S<br>100<br>R SS<br>0<br>25 50 75 100 125 150 175<br>Starting TJ, Junction Temperature (°C)<br>SO ASEC<br>Fig 12c.   Maximum Avalanche Energy<br>Vs. Drain Current<br>4.0<br>3.0 M O TT ID = 250µA<br>P S E<br>GaEREnNe<br>2.0 P EELE<br>P TT<br>1.0<br>-75 -50 -25 0 25 50 75 100 125 150 175<br>S<br>TJ , Temperature ( °C )<br>E E T<br>EAS, Single Pulse Avalanche Energy (mJ)<br>VGS(th) Gate threshold Voltage (V)<br>**----- End of picture text -----**<br>


**Fig 14.** Threshold Voltage Vs. Temperature 

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**Fig 13b.** Gate Charge Test Circuit 6 

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1000<br>Duty Cycle = Single Pulse<br>Poo EE Allowed avalanche Current vs  ET<br>100 avalanche  pulsewidth,  tav<br>0.01 assuming  ∆ Tj = 25°C due to<br>avalanche losses. Note: In no<br>case should Tj be allowed to<br>0.05<br>exceed Tjmax<br>10<br>0.10<br>1<br>P e<br>0.1<br>1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02<br>tav (sec)<br>Fig 15.   Typical Avalanche Current Vs.Pulsewidth<br>160 Notes on Repetitive Avalanche Curves , Figures 15, 16:<br>TOP          Single Pulse                 (For further info, see AN-1005 at www.irf.com)<br>BOTTOM   1% Duty Cycle 1. Avalanche failures assumption:<br>ID = 42A   Purely a thermal phenomenon and failure occurs at a<br>120     temperature far in excess of Tjmax. This is validated for<br>    every part type.<br>2. Safe operation in Avalanche is allowed as long asTjmax is<br>  not exceeded.<br>80 N UTT 3. Equation below based on circuit and waveforms shown in<br>  Figures 12a, 12b.<br>4. PD (ave) = Average power dissipation per single<br>    avalanche pulse.<br>E N 5. BV = Rated breakdown voltage (1.3 factor accounts for<br>40     voltage increase during avalanche).<br>6. Iav = Allowable avalanche current.<br>St 7.  ∆ T = Allowable rise in junction temperature, not to exceed<br>LTRS.SA     Tjmax (assumed as 25°C in Figure 15, 16).<br>0   tav = Average time in avalanche.<br>25 50 75 100 125 150 175   D = Duty cycle in avalanche =  tav ·f<br>Starting TJ , Junction Temperature (°C)   ZthJC(D, tav) = Transient thermal resistance, see figure 11)<br>EAR , Avalanche Energy (mJ)<br>Avalanche Current (A)<br>**----- End of picture text -----**<br>


**Fig 16.** Maximum Avalanche Energy Vs. Temperature 

- **PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2 T/ [1.3·BV·Zth]** 

   - **EAS (AR) = PD (ave)·tav** 

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Driver Gate Drive<br>P.W.<br>D.U.T + {¢$ P.W. Period —— | D = —— Period<br>) [©)]    •  Circuit Layout Considerations | t V i GS=10V<br>| — -  •   GroundLow StrayPlane Inductance<br> •   CurrentLow LeakageTransformerInductance @ D.U.T. ISD Waveform<br>+<br>= ReverseRecovery Body Diode Forward \<br>- a - ® + Current r Current di/dt 7<br>® D.U.T. VDS Waveform Diode Recoverydv/dt ‘ ’<br>00 - VDD<br>ay<br>•   Re-Applied<br>•   Driver same type as D.U.T. + Voltage Body Diode  Forward Drop<br>Re ( a •   dvidt controlledIsp controlled bybyDuty Re Factor "D" Vop - ® Inductor Curent<br>•<br>D.U.T. - Device Under Test Ripple  ≤ 5% e s ISD ee<br>**----- End of picture text -----**<br>


## **Fig 17.** Peak Diode Recovery dv/dt Test HEXFET ® Power MOSFETs 

## for N-Channel 

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-<br>≤ 1  ys<br>≤ 0.1 %<br>**----- End of picture text -----**<br>


**Fig 18a.** Switching Time Test Circuit 

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VDS<br>90%<br>10%<br>VGS | |<br>lee >! able<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>


**Fig 18b.** Switching Time Waveforms 

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EXAMPLE: THIS IS AN IRFR120<br>PART NUMBER<br>WITH ASSEMBLY INTERNATIONAL a,<br>LOT CODE 1234 RECTIFIER IRFR120 DATE CODE<br>ASSEMBLED ON WW 16, 2001 LOGO 116A YEAR 1 =  2001<br>IN THE ASSEMBLY LINE "A" 12 34 WEEK 16<br>LINE A<br>Note: "P" in assembly line position ASSEMBLY<br>indicates "Lead-Free" LOT CODE<br>"P" in assembly line position indicates<br>"Lead-Free" qualification to the consumer-level<br>PART NUMBER<br>INTERNATIONAL go<br>OR DATE CODE<br>RECTIFIER IRFR120 P =  DESIGNATES LEAD-FREE<br>LOGO PRODUCT (OPTIONAL)<br>12 34<br>P =  DESIGNATES LEAD-FREE<br>ASSEMBLY PRODUCT QUALIFIED TO THE<br>LOT CODE e a l CONSUMER LEVEL (OPTIONAL)<br>YEAR 1 =  2001<br>WEEK 16<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/ data/auirfr4104.pdf 2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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EXAMPLE: THIS IS AN IRFU120 PART NUMBER<br>INTERNATIONAL<br>WITH ASSEMBLY<br>LOT CODE 5678 RECTIFIER IRFU120 DATE CODE<br>LOGO 119A YEAR 1 =  2001<br>ASSEMBLED ON WW 19, 2001 56 78 WEEK 19<br>IN THE ASSEMBLY LINE "A"<br>LINE A<br>ASSEMBLY<br>LOT CODE<br>Note: "P" in assembly line position<br>indicates Lead-Free"<br>OR<br>PART NUMBER<br>INTERNATIONAL<br>RECTIFIER IRFU120 DATE CODE<br>LOGO TeaR PiigA P =  DESIGNATES LEAD-FREE<br>56 78 PRODUCT (OPTIONAL)<br>YEAR 1 =  2001<br>ASSEMBLY<br>LOT CODE WEEK 19<br>A =  ASSEMBLY SITE CODE<br>**----- End of picture text -----**<br>


## **Notes:** 

**1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/ data/auirfr4104.pdf** 

**2. For the most current drawing please refer to IR website at http://www.irf.com/package/** 

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TR TRR TRL<br>$oG0¢90\ | oeoof4<br>16.3 ( .641 ) 16.3 ( .641 )<br>15.7 ( .619 ) 15.7 ( .619 )<br>CECE AIO),<br>12.1 ( .476 ) FEED DIRECTION 8.1 ( .318 ) FEED DIRECTION<br>11.9 ( .469 ) 7.9 ( .312 )<br>NOTES :<br>1.  CONTROLLING DIMENSION : MILLIMETER.<br>2.  ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).<br>3.  OUTLINE CONFORMS TO EIA-481 & EIA-541.<br>|   13 INCH<br>16 mm<br>|X a<br>**----- End of picture text -----**<br>


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Coss eff. is a fixed capacitance that gives the same charging time 

Repetitive rating;  pulse width limited by 

as Coss while VDS is rising from 0 to 80% VDSS . 

max. junction temperature. (See fig. 11). 

- @ Limited by TJmax, starting TJ = 25°C, L = 0.16mH ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive RG = 25 Ω , IAS = 42A, VGS =10V. Part not avalanche performance. 

   - ® Limited by TJmaxJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. 

- recommended for use above this value. © This value determined from sample failure population. 100% ® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. 

® Pulse width ≤ 1.0ms; duty cycle ≤ 2%. tested to this value in production. @ 

- @ When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. 

**IR WORLD HEADQUARTERS:** 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 

TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information **.** 09/2010 

www.irf.com 

11 



## Links

- [View this product on Novapart](https://novapart.co/products/IRFR4104TRPBF/power-mosfet-n-channel-40-v-42-a-5500-ohm-to-252aa)
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- [Supplier page](https://es.farnell.com/infineon/irfr4104trpbf/mosfet-n-ch-40v-42a-to-252aa/dp/2725967)
---

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